公开(公告)号：US20110013463A1

公开(公告)日：2011-01-20

申请号：US12892691

申请日：2010-09-28

申请人： Kirk Prall ,  Behnam Moradi ,  Seiichi Aritome ,  Di Li ,  Chris Larsen

发明人： Kirk Prall ,  Behnam Moradi ,  Seiichi Aritome ,  Di Li ,  Chris Larsen

IPC分类号： G11C11/34

CPC分类号： H01L29/66825 ,  H01L21/22 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/324 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/6659 ,  H01L29/66659 ,  H01L29/788

摘要： Disclosed is a method of forming memory devices employing halogen ion implantation and diffusion processes. In one illustrative embodiment, the method includes forming a plurality of word line structures above a semiconducting substrate, each of the word line structures comprising a gate insulation layer, performing an LDD ion implantation process to form LDD doped regions in the substrate between the word line structures, performing a halogen ion implantation process to implant atoms of halogen into the semiconducting substrate between the word line structures, and performing at least one anneal process to cause at least some of the atoms of halogen to diffuse into the gate insulation layers on adjacent word line structures.

摘要翻译： 公开了一种使用卤素离子注入和扩散工艺形成存储器件的方法。 在一个说明性实施例中，该方法包括在半导体衬底上形成多个字线结构，每个字线结构包括栅极绝缘层，执行LDD离子注入工艺，以在字线之间的衬底中形成LDD掺杂区域 结构，执行卤素离子注入工艺，以将卤素原子植入到半导体衬底中的字线结构之间，以及执行至少一个退火工艺以使至少一些卤素原子扩散到相邻字的栅极绝缘层中 线结构。

公开(公告)号：US07485528B2

公开(公告)日：2009-02-03

申请号：US11457620

申请日：2006-07-14

申请人： Kirk Prall ,  Behnam Moradi ,  Seiichi Aritome ,  Di Li ,  Chris Larsen

发明人： Kirk Prall ,  Behnam Moradi ,  Seiichi Aritome ,  Di Li ,  Chris Larsen

IPC分类号： H01L21/336

CPC分类号： H01L29/66825 ,  H01L21/22 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/324 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/6659 ,  H01L29/66659 ,  H01L29/788

摘要： Disclosed is a method of forming memory devices employing halogen ion implantation and diffusion processes. In one illustrative embodiment, the method includes forming a plurality of word line structures above a semiconducting substrate, each of the word line structures comprising a gate insulation layer, performing an LDD ion implantation process to form LDD doped regions in the substrate between the word line structures, performing a halogen ion implantation process to implant atoms of halogen into the semiconducting substrate between the word line structures, and performing at least one anneal process to cause at least some of the atoms of halogen to diffuse into the gate insulation layers on adjacent word line structures.

摘要翻译： 公开了一种使用卤素离子注入和扩散工艺形成存储器件的方法。 在一个说明性实施例中，该方法包括在半导体衬底上形成多个字线结构，每个字线结构包括栅极绝缘层，执行LDD离子注入工艺，以在字线之间的衬底中形成LDD掺杂区域 结构，执行卤素离子注入工艺，以将卤素原子植入到半导体衬底中的字线结构之间，以及执行至少一个退火工艺以使至少一些卤素原子扩散到相邻字的栅极绝缘层中 线结构。

公开(公告)号：US06692323B1

公开(公告)日：2004-02-17

申请号：US09483409

申请日：2000-01-14

申请人： Behnam Moradi ,  Tian Zhang ,  John Lee

发明人： Behnam Moradi ,  Tian Zhang ,  John Lee

IPC分类号： H01J902

CPC分类号： H01J1/3044 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2329/00

摘要： A structure and method are provided to inhibit degradation to the electron beam of a field emitter device by coating the field emitter tip with a substance or a compound. The substance or compound acts in the presence of outgassing to inhibit such degradation. In one embodiment, the substance or compound coating the field emitter tip is stable in the presence of outgassing. In another embodiment, the substance or compound decomposes at least one matter in the outgassing. In yet another embodiment, the substance or compound neutralizes at least one matter in the outgassing. In a further embodiment, the substance or compound brings about a catalysis in the presence of outgassing.

摘要翻译： 提供了一种结构和方法，通过用物质或化合物涂覆场致发射极尖端来抑制场发射器件的电子束的劣化。 物质或化合物在除气的作用下起作用以抑制这种降解。 在一个实施方案中，涂覆场发射器尖端的物质或化合物在除气的存在下是稳定的。 在另一个实施方案中，物质或化合物在除气中分解至少一种物质。 在另一个实施方案中，物质或化合物在除气中中和至少一种物质。 在另一个实施方案中，物质或化合物在除气的存在下引起催化。

公开(公告)号：US07824994B2

公开(公告)日：2010-11-02

申请号：US12271132

申请日：2008-11-14

申请人： Kirk Prall ,  Behnam Moradi ,  Seiichi Aritome ,  Di Li ,  Chris Larsen

发明人： Kirk Prall ,  Behnam Moradi ,  Seiichi Aritome ,  Di Li ,  Chris Larsen

IPC分类号： H01L21/336

CPC分类号： H01L29/66825 ,  H01L21/22 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/324 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/6659 ,  H01L29/66659 ,  H01L29/788

摘要： Disclosed is a method of forming memory devices employing halogen ion implantation and diffusion processes. In one illustrative embodiment, the method includes forming a plurality of word line structures above a semiconducting substrate, each of the word line structures comprising a gate insulation layer, performing an LDD ion implantation process to form LDD doped regions in the substrate between the word line structures, performing a halogen ion implantation process to implant atoms of halogen into the semiconducting substrate between the word line structures, and performing at least one anneal process to cause at least some of the atoms of halogen to diffuse into the gate insulation layers on adjacent word line structures.

摘要翻译： 公开了一种使用卤素离子注入和扩散工艺形成存储器件的方法。 在一个说明性实施例中，该方法包括在半导体衬底上形成多个字线结构，每个字线结构包括栅极绝缘层，执行LDD离子注入工艺，以在字线之间的衬底中形成LDD掺杂区域 结构，执行卤素离子注入工艺，以将卤素原子植入到半导体衬底中的字线结构之间，以及执行至少一个退火工艺以使至少一些卤素原子扩散到相邻字的栅极绝缘层中 线结构。

公开(公告)号：US20090068812A1

公开(公告)日：2009-03-12

申请号：US12271132

申请日：2008-11-14

申请人： Kirk Prall ,  Behnam Moradi ,  Seiichi Aritome ,  Di Li ,  Chris Larsen

发明人： Kirk Prall ,  Behnam Moradi ,  Seiichi Aritome ,  Di Li ,  Chris Larsen

IPC分类号： H01L21/336

CPC分类号： H01L29/66825 ,  H01L21/22 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/324 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/6659 ,  H01L29/66659 ,  H01L29/788

摘要： Disclosed is a method of forming memory devices employing halogen ion implantation and diffusion processes. In one illustrative embodiment, the method includes forming a plurality of word line structures above a semiconducting substrate, each of the word line structures comprising a gate insulation layer, performing an LDD ion implantation process to form LDD doped regions in the substrate between the word line structures, performing a halogen ion implantation process to implant atoms of halogen into the semiconducting substrate between the word line structures, and performing at least one anneal process to cause at least some of the atoms of halogen to diffuse into the gate insulation layers on adjacent word line structures.

摘要翻译： 公开了一种使用卤素离子注入和扩散工艺形成存储器件的方法。 在一个说明性实施例中，该方法包括在半导体衬底上形成多个字线结构，每个字线结构包括栅极绝缘层，执行LDD离子注入工艺，以在字线之间的衬底中形成LDD掺杂区域 结构，执行卤素离子注入工艺，以将卤素原子植入到半导体衬底中的字线结构之间，以及执行至少一个退火工艺，以使至少一些卤素原子扩散到相邻字的栅极绝缘层中 线结构。

公开(公告)号：US07492086B1

公开(公告)日：2009-02-17

申请号：US09489286

申请日：2000-01-21

申请人： David A. Cathey ,  Surjit S. Chadha ,  Behnam Moradi

发明人： David A. Cathey ,  Surjit S. Chadha ,  Behnam Moradi

IPC分类号： H01J1/02 ,  H01J63/04

CPC分类号： H01J9/025 ,  H01J2329/00

摘要： According to one aspect of the invention, a field emission display is provided comprising: an anode; a phosphor screen located on the anode; a cathode; an evacuated space between the anode and the cathode; an emitter located on the cathode opposite the phosphor; wherein the emitter comprises an electropositive element both in a body of the emitter and on a surface of the emitter. According to another aspect of the invention, a process for manufacturing a FED is provided comprising the steps of forming an emitter comprising an electropositive element in the body of the tip; positioning the emitter in opposing relation to a phosphor display screen; creating an evacuated space between the emitter tip and the phosphor display screen; and causing the electropositive element to migrate to an emission surface of the emitter.

摘要翻译： 根据本发明的一个方面，提供一种场发射显示器，包括：阳极; 位于阳极上的荧光屏; 阴极 阳极和阴极之间的抽空空间; 位于与磷光体相对的阴极上的发射极; 其中所述发射器包括在所述发射体的主体和所述发射极的表面上的正电极元件。 根据本发明的另一方面，提供了一种用于制造FED的方法，包括以下步骤：在所述尖端的主体中形成包含正电荷元件的发射器; 将发射器定位成与荧光体显示屏相对的关系; 在发射极尖端和荧光体显示屏之间产生抽空空间; 并使正电荷元件迁移到发射极的发射表面。

公开(公告)号：US20060278913A1

公开(公告)日：2006-12-14

申请号：US11147976

申请日：2005-06-08

申请人： Andrei Mihnea ,  Behnam Moradi ,  Paul Rudeck ,  Aritome Seiichi ,  Di Li

发明人： Andrei Mihnea ,  Behnam Moradi ,  Paul Rudeck ,  Aritome Seiichi ,  Di Li

IPC分类号： H01L29/788 ,  H01L21/336 ,  G11C16/04

CPC分类号： H01L27/115 ,  G11C16/0483 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11568

摘要： A plurality of memory cell stacks are formed over a substrate. The substrate does not have diffusion regions between each memory cell stack to link the memory cells. The cells are formed close enough such that the memory cells are linked serially by the electric fields generated by each floating gate in the channel regions. In one embodiment, an n-layer is implanted at the top of the substrate to increase conductivity between cells. The select transistors can be linked to the serial string by diffusion regions or by interaction of the electric fields between the select transistor channel and the memory cell channel.

摘要翻译： 多个存储单元堆叠形成在衬底上。 衬底在每个存储单元堆之间不具有扩散区，以连接存储单元。 电池形成得足够接近，使得存储器单元由通道区域中的每个浮动栅极产生的电场串联连接。 在一个实施例中，在衬底的顶部注入n层以增加电池之间的导电性。 选择晶体管可以通过扩散区域或通过选择晶体管沟道和存储单元通道之间的电场的相互作用而连接到串行串。

公开(公告)号：US06515414B1

公开(公告)日：2003-02-04

申请号：US09564356

申请日：2000-05-01

申请人： David A. Cathey ,  Surjit S. Chadha ,  Behnam Moradi

发明人： David A. Cathey ,  Surjit S. Chadha ,  Behnam Moradi

IPC分类号： H01J162

CPC分类号： H01J9/025 ,  H01J2329/00

摘要： According to one aspect of the invention, a field emission display is provided comprising: an anode; a phosphor screen located on the anode; a cathode; an evacuated space between the anode and the cathode; an emitter located on the cathode opposite the phosphor; wherein the emitter comprises an electropositive element both in a body of the emitter and on a surface of the emitter. According to another aspect of the invention a process for manufacturing an FED is provided comprising the steps of: forming an emitter comprising an electropositive element in the body of the tip; positioning the emitter in opposing relation to a phosphor display screen; creating an evacuated space between the emitter tip and the phosphor display screen; and causing the electropositive element to migrate to the an emission surface of the emitter.

摘要翻译： 根据本发明的一个方面，提供一种场发射显示器，包括：阳极; 位于阳极上的荧光屏; 阴极 阳极和阴极之间的抽空空间; 位于与磷光体相对的阴极上的发射极; 其中所述发射器包括在所述发射体的主体和所述发射极的表面上的正电极元件。 根据本发明的另一方面，提供了一种用于制造FED的方法，包括以下步骤：在尖端的主体中形成包含正电荷元件的发射器; 将发射器定位成与荧光体显示屏相对的关系; 在发射极尖端和荧光体显示屏之间产生抽空空间; 并使正电荷元件迁移到发射体的发射表面。

公开(公告)号：US06509686B1

公开(公告)日：2003-01-21

申请号：US09398155

申请日：1999-09-16

申请人： Behnam Moradi ,  Kanwal K. Raina ,  Michael J. Westphal

发明人： Behnam Moradi ,  Kanwal K. Raina ,  Michael J. Westphal

IPC分类号： H01J1304

CPC分类号： H01J9/025 ,  H01J2329/00

摘要： Improved field emission display includes a buffer layer of copper, aluminum, silicon nitride or doped or undoped amorphous, poly, or microcrystalline silicon located between a chromium gate electrode and associated dielectric layer in a cathode assembly. The buffer layer substantially reduces or eliminates the occurrence of an adverse chemical reaction between the chromium gate electrode and dielectric layer.

摘要翻译： 改进的场致发射显示器包括位于阴极组件中的铬栅电极和相关介电层之间的铜，铝，氮化硅或掺杂或未掺杂的非晶，多晶或微晶硅的缓冲层。 缓冲层基本上减少或消除了铬栅电极和电介质层之间的不利的化学反应的发生。

公开(公告)号：US06436788B1

公开(公告)日：2002-08-20

申请号：US09126695

申请日：1998-07-30

申请人： John K. Lee ,  Behnam Moradi

发明人： John K. Lee ,  Behnam Moradi

IPC分类号： H01L2176

CPC分类号： H01J3/022

摘要： An emitter substructure and methods for manufacturing the substructure are described. A substrate has a p-region formed at a surface of the substrate. A n-tank is formed such that the p-region surrounds a periphery of the n-tank. An emitter is formed on and electrically coupled to the n-tank. A dielectric layer is formed on the substrate that includes an opening surrounding the emitter. An extraction grid is formed on the dielectric layer. The extraction grid includes an opening surrounding and in close proximity to a tip of the emitter. An insulating region is formed at a lower boundary of the n-tank. The insulating region electrically isolates the emitter and the n-tank along at least a portion of the lower boundary beneath the opening. The insulating region thus functions to displace a depletion region associated with a boundary between the p-region and the n-tank from an area that can be illuminated by photons traveling through the extraction grid or openings in the extraction grid. This reduces distortion in field emission displays.