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    Method for producing a CMOS circuit
    11.
    发明授权
    Method for producing a CMOS circuit 失效
    CMOS电路的制造方法

    公开(公告)号：US5913115A

    公开(公告)日：1999-06-15

    申请号：US67766

    申请日：1998-04-29

    Applicant: Markus Biebl ,  Udo Schwalke ,  Herbert Schaefer ,  Dirk Schumann

    Inventor： Markus Biebl ,  Udo Schwalke ,  Herbert Schaefer ,  Dirk Schumann

    IPC: H01L27/092 ,  H01L21/20 ,  H01L21/8238 ,  H01L21/265

    CPC classification number: H01L21/02381 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/823814

    Abstract: In producing a CMOS circuit, an n-channel MOS transistor and a p-channel MOS transistor are formed in a semiconductor substrate. In situ p-doped, monocrystalline silicon structures are formed by epitaxial growth selectively with respect to insulating material and with respect to n-doped silicon, such silicon structures being suitable as a diffusion source for forming source/drain regions of the p-channel MOS transistor. The source/drain regions of the n-channel MOS transistor are produced beforehand by means of implantation or diffusion. Owing to the selectivity of the epitaxy that is used, it is not necessary to cover the n-doped source/drain regions of the n-channel MOS transistor during the production of the p-channel MOS transistor.

    Abstract translation: 在制造CMOS电路时，在半导体衬底中形成n沟道MOS晶体管和p沟道MOS晶体管。 原位p掺杂的单晶硅结构通过相对于绝缘材料选择性地外延生长而形成，并且对于n掺杂的硅，这种硅结构适合作为用于形成p沟道MOS的源极/漏极区的扩散源 晶体管。 n沟道MOS晶体管的源极/漏极区域通过注入或扩散预先产生。 由于使用的外延的选择性，在制造p沟道MOS晶体管期间不需要覆盖n沟道MOS晶体管的n掺杂源极/漏极区域。

    METHOD AND COMPOSITION FOR CLEANING OBJECTS
    12.
    发明申请
    METHOD AND COMPOSITION FOR CLEANING OBJECTS 有权
    清洁对象的方法和组合

    公开(公告)号：US20120085371A1

    公开(公告)日：2012-04-12

    申请号：US13259536

    申请日：2010-03-22

    Applicant: Dirk Schumann ,  Rainer Surkow

    Inventor： Dirk Schumann ,  Rainer Surkow

    IPC: B08B3/00 ,  C11D17/00

    CPC classification number: C11D17/0021 ,  C11D1/825 ,  C11D1/83 ,  C11D3/0052 ,  C11D3/18 ,  C11D3/20 ,  C11D3/201 ,  C11D3/2041 ,  C11D3/2072 ,  C11D3/2093 ,  C11D3/32

    Abstract: A method for cleaning objects made of organic or inorganic materials, wherein the relevant material is brought into contact with a composition in the form of a fluid nanophase system, comprising a) at least one water-insoluble substance having a water solubility of less than 4 grams per liter, b) at least one amphiphilic substance (NP-MCA) which has no surfactant structure, is not structure-forming on its own, the solubility of which in water or oil ranges between 4 g and 1000 g per liter and which does not preferably accumulate at the oil-water interface, c) at least one anionic, cationic, amphoteric and/or non-ionic surfactant, d) at least one polar protic solvent, in particular having hydroxy functionality, e) if necessary one or more auxiliary substance.

    Abstract translation: 一种用于清洁由有机或无机材料制成的物体的方法，其中所述相关材料与流体纳米相系统形式的组合物接触，所述组合物包含：a）至少一种具有小于4的水溶性的水不溶性物质 克/升，b）至少一种不具有表面活性剂结构的两亲物质（NP-MCA）本身不是结构形成的，其在水或油中的溶解度范围为4g至1000g / l，其中 不优选在油 - 水界面处积聚，c）至少一种阴离子，阳离子，两性和/或非离子表面活性剂，d）至少一种极性质子溶剂，特别是具有羟基官能团，e） 更多辅助物质。

    PREPARATION FOR EXTERNAL APPLICATION
    13.
    发明申请
    PREPARATION FOR EXTERNAL APPLICATION 审中-公开
    外部应用准备

    公开(公告)号：US20120064011A1

    公开(公告)日：2012-03-15

    申请号：US13257100

    申请日：2010-03-19

    Applicant: Dirk Schumann

    Inventor： Dirk Schumann

    IPC: A61K49/00 ,  A61K47/14 ,  A61K47/16 ,  A61K47/44 ,  A61K47/08 ,  A61K47/20 ,  A61K47/24 ,  A61K8/34 ,  A61K8/37 ,  A61K8/35 ,  A61K8/44 ,  A61K8/46 ,  A61K8/55 ,  A61K8/92 ,  A61Q19/00 ,  A61P23/00 ,  A61K47/10 ,  B82Y5/00

    CPC classification number: A61K9/1075 ,  A61K9/0014 ,  A61K47/08 ,  A61K47/10

    Abstract: Preparations for external application to human and animal skin, comprising: a) a composition in the form of a fluid nanophase system, comprising the components of a1) at least one water-insoluble substance with a water solubility of less than 4 gram per liter, a2) at least one amphiphilic substance (NP-MCA), which has no surfactant structure, does not build structures alone, the solubility of which is between 4 g and 1000 g per liter in water or oil and which does not enrich preferably at the oil-water interface, a3) at least one anionic, cationic, amphoteric and/or non-ionic surfactant, a4) at least one polar protic solvent, in particular having hydroxy functionality, a5) if necessary one or more adjuvants, wherein the percentage relate to the total weight of the composition each; and b) a therapeutic, cosmetic or diagnostically effective agent in a therapeutic, cosmetic or diagnostically effective amount.

    Abstract translation: 外用于人和动物皮肤的制剂，包括：a）流体纳米相系统形式的组合物，其包含a1）至少一种水溶解度小于4克/升的水不溶性物质的组分， a2）不具有表面活性剂结构的至少一种两亲物质（NP-MCA）不单独构成结构，其溶解度在水或油中为4g至1000g / l，优选不在 油 - 水界面，a3）至少一种阴离子，阳离子，两性和/或非离子表面活性剂，a4）至少一种极性质子溶剂，特别是具有羟基官能团，a5）如果需要，一种或多种助剂，其中百分比 涉及组合物的总重量; 和b）治疗，美容或诊断有效的治疗，美容或诊断有效量的药剂。

    APPARATUS FOR SETTING THE SPACING OF A FREE STANDING RANGE FROM A FLOOR
    15.
    发明申请
    APPARATUS FOR SETTING THE SPACING OF A FREE STANDING RANGE FROM A FLOOR 有权
    用于设置地板上自由定位范围的空间的装置

    公开(公告)号：US20110017883A1

    公开(公告)日：2011-01-27

    申请号：US12895994

    申请日：2010-10-01

    Applicant: Klaus Erdmann ,  George May ,  Dirk Schumann

    Inventor： Klaus Erdmann ,  George May ,  Dirk Schumann

    IPC: F16M11/24

    CPC classification number: A47L15/4253 ,  D06F39/125 ,  F16M7/00

    Abstract: An apparatus for setting the spacing of a free standing range relative to a floor includes a base component for contacting the floor, a threaded element, and a winding follower. The winding follower extends into the helical recess of the threaded element such that the winding follower travels progressively further along the helical recess of the threaded element. A blocking member engages the winding follower during travel of the winding follower along the helical recess of the threaded element to resist a disengagement movement.

    Abstract translation: 用于设定相对于地板的自由站立范围的间隔的装置包括用于接触地板的基座部件，螺纹元件和绕组从动件。 绕组从动件延伸到螺纹元件的螺旋凹槽中，使得绕组从动件沿螺纹元件的螺旋凹槽进一步进一步移动。 在绕线从动件沿着螺纹元件的螺旋凹槽行进期间，阻挡构件接合绕组从动件以抵抗分离运动。

    Method for forming an SOI substrate, vertical transistor and memory cell with vertical transistor
    16.
    发明授权
    Method for forming an SOI substrate, vertical transistor and memory cell with vertical transistor 失效
    用于形成SOI衬底，垂直晶体管和具有垂直晶体管的存储单元的方法

    公开(公告)号：US07084043B2

    公开(公告)日：2006-08-01

    申请号：US10792691

    申请日：2004-03-05

    Applicant: Albert Birner ,  Steffen Breuer ,  Matthias Goldbach ,  Joern Luetzen ,  Dirk Schumann

    Inventor： Albert Birner ,  Steffen Breuer ,  Matthias Goldbach ,  Joern Luetzen ,  Dirk Schumann

    IPC: H01L21/76 ,  H01L21/31

    CPC classification number: H01L27/10864 ,  H01L27/10867 ,  H01L27/1203

    Abstract: A method for producing a silicon-on-insulator layer structure on a silicon surface with any desired geometry can locally produce the silicon-on-insulator structure. The method includes formation of mesopores in the silicon surface region, oxidation of the mesopore surface to form silicon oxide and rib regions from silicon in single-crystal form; and execution of a selective epitaxy process that that silicon grows on the uncovered rib regions, selectively with respect to the silicon oxide regions. Rib regions remain in place between adjacent mesopores, this step being ended as soon as a predetermined minimum silicon wall thickness of the rib regions is reached, the uncovering of the rib regions, which are arranged at the end remote from the semiconductor substrate between adjacent mesopores. The method can be used to fabricate a vertical transistor and a memory cell having a select transistor of this type.

    Abstract translation: 在任何期望的几何形状的硅表面上制造绝缘体上硅层结构的方法可以局部地产生绝缘体上硅结构。 该方法包括在硅表面区域形成中孔，中孔表面的氧化形成硅单晶的硅氧化物和肋状区域; 以及执行选择性外延工艺，其中硅在相对于氧化硅区域选择性地在未覆盖的肋区域上生长。 肋区域保持在相邻的中孔之间的适当位置，一旦达到肋区域的预定的最小硅壁厚度，则该步骤结束，肋区域的露出，其布置在远离半导体衬底的相邻介孔之间的端部 。 该方法可用于制造具有这种类型的选择晶体管的垂直晶体管和存储单元。

    Rotary switch configuration for a household appliance
    18.
    发明授权
    Rotary switch configuration for a household appliance 有权
    家用电器的旋转开关配置

    公开(公告)号：US06720513B2

    公开(公告)日：2004-04-13

    申请号：US10384997

    申请日：2003-03-10

    Applicant: Reinhard Fleissner ,  Ernst Huber ,  Dirk Schumann

    Inventor： Reinhard Fleissner ,  Ernst Huber ,  Dirk Schumann

    IPC: H01H308

    CPC classification number: G05G1/08 ,  H01H3/08 ,  H01H3/10 ,  H01H2003/085 ,  H01H2003/105 ,  H01H2229/042

    Abstract: A rotary switch configuration for a household appliance includes a rotary knob seated in a cutout in an appliance panel and firmly connected to an actuating shaft so as to rotate with it but move axially, the actuating shaft transmitting the rotary movement of the rotary knob to a switching shaft of a switching unit mounted behind the appliance panel. Exact and wobble-free guidance of the rotary knob is achieved by the actuating shaft being rotatably mounted on the appliance panel by a bearing device.

    Abstract translation: 家用电器的旋转开关配置包括：安置在电器面板中的切口中的旋钮，并且牢固地连接到致动轴上以便随其旋转但是沿轴向移动，致动轴将旋钮的旋转运动传递到 安装在电器面板后面的开关单元的开关轴。 通过由轴承装置可旋转地安装在电器面板上的致动轴来实现旋钮的精确和无摇摆的引导。

    Method for manufacturing an integrated circuit with low threshold voltage differences of the transistors therein
    19.
    发明授权
    Method for manufacturing an integrated circuit with low threshold voltage differences of the transistors therein 有权
    用于制造其中晶体管的阈值电压差低的集成电路的方法

    公开(公告)号：US06387766B1

    公开(公告)日：2002-05-14

    申请号：US09429834

    申请日：1999-10-29

    Applicant: Dirk Schumann

    Inventor： Dirk Schumann

    IPC: H01L21336

    CPC classification number: H01L29/6659 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/823418 ,  H01L27/088 ,  H01L29/1033

    Abstract: In an integrated circuit with low threshold voltage differences of the transistors and a manufacturing process for such an integrated circuit, MOS transistors of different lengths but having threshold voltages that are substantially the same are made by avoiding dopant peaks at the channel edges by an angled nitrogen implantation, so that implantation paths at those edges are occupied by nitrogen atoms.

    Abstract translation: 在晶体管具有低阈值电压差的集成电路和用于这种集成电路的制造工艺中，具有不同长度但具有基本相同的阈值电压的MOS晶体管是通过避免在沟道边缘处的倾斜氮 使得这些边缘处的注入路径被氮原子占据。

    Apparatus for setting the spacing of a free standing range from a floor
    20.
    发明授权
    Apparatus for setting the spacing of a free standing range from a floor 有权
    用于从地板设定自由站立距离的间隔的装置

    公开(公告)号：US08079555B2

    公开(公告)日：2011-12-20

    申请号：US12895994

    申请日：2010-10-01

    Applicant: Klaus Erdmann ,  George May ,  Dirk Schumann

    Inventor： Klaus Erdmann ,  George May ,  Dirk Schumann

    IPC: F16M11/24

    CPC classification number: A47L15/4253 ,  D06F39/125 ,  F16M7/00

    Abstract: An apparatus for setting the spacing of a free standing range relative to a floor includes a base component for contacting the floor, a threaded element, and a winding follower. The winding follower extends into the helical recess of the threaded element such that the winding follower travels progressively further along the helical recess of the threaded element. A blocking member engages the winding follower during travel of the winding follower along the helical recess of the threaded element to resist a disengagement movement.

    Abstract translation: 用于设定相对于地板的自由站立范围的间隔的装置包括用于接触地板的基座部件，螺纹元件和绕组从动件。 绕组从动件延伸到螺纹元件的螺旋凹槽中，使得绕组从动件沿螺纹元件的螺旋凹槽进一步进一步移动。 在绕线从动件沿着螺纹元件的螺旋凹槽行进期间，阻挡构件接合绕组从动件以抵抗分离运动。

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