公开(公告)号：US20070074540A1

公开(公告)日：2007-04-05

申请号：US11635440

申请日：2006-12-06

Applicant: Gang Chen ,  Ronen Rapaport ,  Elsa Reichmanis ,  Shu Yang

Inventor： Gang Chen ,  Ronen Rapaport ,  Elsa Reichmanis ,  Shu Yang

IPC: C03B37/016

CPC classification number: C03B19/12 ,  C03B2201/58 ,  C03C11/00

Abstract: Techniques for producing a glass structure having interconnected macroscopic pores, including providing a polymeric structure having interconnected macroscopic pores; providing polymerizable glass precursors; filling pores in the polymeric structure with the polymerizable glass precursors; polymerizing the polymerizable glass precursors to yield a filled polymeric structure; and decomposing the filled polymeric structure to produce a glass structure having interconnected macroscopic pores. Techniques for filling pores of such glass structure with a material having a high refractive index, and for then removing the glass structure. Structures can be produced having interconnected macroscopic pores and high refractive index contrasts, which can be used, for example, as photonic band gaps.

Abstract translation: 用于生产具有互连的宏观孔的玻璃结构的技术，包括提供具有互连的宏观孔的聚合物结构; 提供可聚合玻璃前体; 用可聚合玻璃前体填充聚合物结构中的孔; 聚合可聚合的玻璃前体以产生填充的聚合物结构; 并分解填充的聚合物结构以产生具有互连的宏观孔的玻璃结构。 用具有高折射率的材料填充这种玻璃结构的孔的技术，然后去除玻璃结构。 可以制造具有互连的宏观孔和高折射率对比度的结构，其可以用作例如光子带隙。

公开(公告)号：US07008757B2

公开(公告)日：2006-03-07

申请号：US10321027

申请日：2002-12-17

Applicant: Elsa Reichmanis ,  Shu Yang

Inventor： Elsa Reichmanis ,  Shu Yang

IPC: G03F7/20

CPC classification number: G03F7/2022 ,  G03F7/001 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/265 ,  G03F7/36

Abstract: A process for forming a polymer template includes exposing a photoresist having polymer molecules to a light pattern and baking the photoresist to chemically react polymer molecules in portions of the photoresist that were exposed to light of the light pattern. The reacted polymer molecules have a different solubility in a solvent than chemically unreacted polymer molecules. The process also includes washing the baked photoresist with the solvent to produce a porous structure by selectively solvating one of the reacted polymer molecules and the unreacted polymer molecules. The porous structure can be used as template for forming porous structures of high refractive index materials.

Abstract translation: 用于形成聚合物模板的方法包括将具有聚合物分子的光致抗蚀剂暴露于光图案并烘烤光致抗蚀剂以在暴露于光图案的光的光致抗蚀剂的部分中化学反应聚合物分子。 反应的聚合物分子在溶剂中具有与化学未反应的聚合物分子不同的溶解度。 该方法还包括用溶剂洗涤烘烤的光致抗蚀剂，以通过选择性地溶剂化一种反应的聚合物分子和未反应的聚合物分子来产生多孔结构。 多孔结构可以用作形成高折射率材料的多孔结构的模板。

公开(公告)号：US5879857A

公开(公告)日：1999-03-09

申请号：US813732

申请日：1997-03-07

Applicant: Edwin Arthur Chandross ,  Francis Michael Houlihan ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Thomas Ingolf Wallow

Inventor： Edwin Arthur Chandross ,  Francis Michael Houlihan ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Thomas Ingolf Wallow

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C5/00 ,  G03C1/492

CPC classification number: G03F7/039 ,  G03F7/0045 ,  Y10S430/111

Abstract: A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains a polymer in combination with a dissolution inhibitor and a photoacid generator (PAG). The dissolution inhibitor is the condensation reaction product of a saturated polycyclic hydrocarbon compound with at least one hydroxy (OH) substituent and a difunctional saturated linear, branched, or cyclic hydrocarbon compound wherein the functional groups are either carboxylic acid or carboxylic acid chloride groups. The condensation product has at least two polycylic moieties. The polymer optionally has acid labile groups pendant thereto which significantly decrease the solubility of the polymer in a solution of aqueous base. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.

Abstract translation: 公开了一种在该方法中使用的器件制造和抗蚀材料的方法。 抗蚀剂材料包含与溶解抑制剂和光酸产生剂（PAG）组合的聚合物。 溶解抑制剂是饱和多环烃化合物与至少一种羟基（OH）取代基和双官能饱和直链，支链或环状烃化合物的缩合反应产物，其中官能团是羧酸或羧酰氯基团。 缩合产物具有至少两个多环部分。 聚合物任选地具有垂饰的酸不稳定基团，其显着降低聚合物在碱性水溶液中的溶解度。 抗蚀剂材料的膜形成在基板上并暴露于描绘辐射。 辐射引起抗蚀剂材料中的化学变化，使得暴露的抗蚀剂材料比抗蚀剂材料的未曝光部分基本上更溶于碱性水溶液。 使用常规技术开发引入抗蚀剂材料的图像，然后将所得到的图案转移到下面的基底中。

公开(公告)号：US5135838A

公开(公告)日：1992-08-04

申请号：US565074

申请日：1990-08-09

Applicant: Francis M. Houlihan ,  Thomas X. Neenan ,  Elsa Reichmanis

Inventor： Francis M. Houlihan ,  Thomas X. Neenan ,  Elsa Reichmanis

IPC: G03F7/039

CPC classification number: G03F7/039 ,  Y10S430/146

Abstract: A class of resist compositions sensitive to deep ultraviolet radiation includes a resin sensitive to acid and a composition that generates acid upon exposure to such radiation. A group of nitrobenzyl materials is particularly suitable for use as the acid generator.

Abstract translation: 一类对深紫外线辐射敏感的抗蚀剂组合物包括对酸敏感的树脂和暴露于这种辐射时产生酸的组合物。 一组硝基苄基材料特别适合用作酸产生剂。

公开(公告)号：US4996136A

公开(公告)日：1991-02-26

申请号：US316051

申请日：1989-02-24

Applicant: Francis M. Houlihan ,  Elsa Reichmanis ,  Larry F. Thompson

Inventor： Francis M. Houlihan ,  Elsa Reichmanis ,  Larry F. Thompson

IPC: G03F7/039

CPC classification number: G03F7/039 ,  Y10S430/146

Abstract: Sensitive deep ultraviolet resists are formed utilizing a material that undergoes decomposition to form an acid together with a polymer including a chain scission inducing monomer such as sulfonyl units and substituent that undergoes reaction to form an acidic moiety when subjected to the photogenerated species. An exemplary composition includes poly(t-butoxycarbonyloxystyrenesulfone) and 2,6-dinitrobenzyl-p-toluene sulfonate. The sulfonate decomposes to form sulfonic acid upon irradiation. This acid reacts with the polymer group to form an acid functionality while the sulfone moiety of the polymer induces scission. As a result, the irradiated portions of the resist material are soluble in ionic solvents while the unirradiated portions are not.

Abstract translation: 敏感的深紫外线抗蚀剂是利用经历分解形成酸的材料与含有断链诱导单体如磺酰基单元的聚合物形成的物质，并且当经受光生物质时经历反应以形成酸性部分的取代基。 示例性的组合物包括聚（叔丁氧基羰基氧基苯乙烯）和2,6-二硝基苄基对甲苯磺酸盐。 在辐照时磺酸盐分解形成磺酸。 该酸与聚合物基团反应以形成酸官能团，而聚合物的砜部分诱导断裂。 结果，抗蚀剂材料的照射部分可溶于离子溶剂，而未照射部分则不溶解。

公开(公告)号：US4481049A

公开(公告)日：1984-11-06

申请号：US585850

申请日：1984-03-02

Applicant: Elsa Reichmanis ,  Gerald Smolinsky

Inventor： Elsa Reichmanis ,  Gerald Smolinsky

IPC: G03F7/26 ,  G03C5/00 ,  G03F7/038 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC classification number: G03F7/0758 ,  G03F7/094 ,  Y10S438/948

Abstract: Excellent resolution in the lithographic fabrication of electronic devices is achieved with a specific bilevel resist. This bilevel resist includes an underlying layer formed with a conventional material such as a novolac resin baked at 200.degree. C. for 30 minutes and an overlying layer including a silicon containing material such as a silicon derivative of poly(methyl methacrylate). This bilevel resist has the attributes of a trilevel resist and requires significantly less processing.

Abstract translation: 使用特定的双层抗蚀剂实现了电子器件的光刻制造中的优异分辨率。 该双层抗蚀剂包括由常规材料形成的下层，例如在200℃下烘烤30分钟的酚醛清漆树脂，以及包含含硅材料如聚（甲基丙烯酸甲酯）的硅衍生物的上覆层。 这种双层抗蚀剂具有三层抗蚀剂的性质，并且需要显着更少的加工。

公开(公告)号：US20060060839A1

公开(公告)日：2006-03-23

申请号：US11021586

申请日：2004-12-23

Applicant: Edwin Chandross ,  Howard Katz ,  Elsa Reichmanis ,  Subramanian Vaidyanathan

Inventor： Edwin Chandross ,  Howard Katz ,  Elsa Reichmanis ,  Subramanian Vaidyanathan

IPC: H01L29/08

CPC classification number: H01L51/0541 ,  B82Y10/00 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0048 ,  H01L51/0068 ,  H01L51/0566

Abstract: A solid semiconductor composition includes a solid matrix of organic semiconductor molecules and a dispersion of nanorods or nanotubes in the matrix. The nanorods or nanotubes do not form a percolating structure that spans the composition.

Abstract translation: 固体半导体组合物包括有机半导体分子的固体基质和纳米棒或纳米管在基质中的分散体。 纳米棒或纳米管不会形成跨越组合物的渗透结构。

公开(公告)号：US5843624A

公开(公告)日：1998-12-01

申请号：US803703

申请日：1997-02-21

Applicant: Francis Michael Houlihan ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Thomas Ingolf Wallow

Inventor： Francis Michael Houlihan ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Thomas Ingolf Wallow

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C5/00

CPC classification number: G03F7/0045 ,  G03F7/039 ,  Y10S430/114 ,  Y10S430/146

Abstract: The present invention is directed to a process for device fabrication and resist materials that are used in the process. The resist material contains a polymer that is the polymerization product of a monomer that contains alicyclic moieties and at least one other monomer. The polymer is formed by free radical polymerization, and the resulting polymer either has alicyclic moieties incorporated into the polymer backbone or pendant to the polymer backbone via saturated hydrocarbon linkages. Other monomers are selected for polymerization with the alicyclic moiety-containing monomer on the basis of the ability of the monomer to copolymerize by free radical polymerization. Although the polymers are contemplated as useful in resist materials that are sensitive to radiation in the ultraviolet, and x-ray wavelengths as well as sensitive to electron beam radiation, the polymers are particularly advantageous for use in process in which the exposing radiation is 193 nm, because the amount of ethylenic unsaturation in these resist materials is low.

Abstract translation: 本发明涉及用于该方法的器件制造和抗蚀剂材料的方法。 抗蚀剂材料含有聚合物，其是含有脂环部分的单体和至少一种其它单体的聚合产物。 聚合物通过自由基聚合形成，并且所得聚合物或者具有引入到聚合物主链中的脂环部分或通过饱和烃键垂饰于聚合物主链。 基于单体通过自由基聚合共聚的能力，选择其它单体与含脂环部分的单体聚合。 虽然聚合物被认为可用于对紫外线和X射线波长以及对电子束辐射敏感的抗辐射材料，但是聚合物特别有利于在曝光辐射为193nm ，因为这些抗蚀剂材料中的烯属不饱和基团的量低。

公开(公告)号：US5756266A

公开(公告)日：1998-05-26

申请号：US679749

申请日：1996-07-15

Applicant: Mary Ellen Galvin-Donoghue ,  Elsa Reichmanis

Inventor： Mary Ellen Galvin-Donoghue ,  Elsa Reichmanis

IPC: G03F7/26 ,  G03F7/004 ,  G03F7/039 ,  G03F7/38 ,  H01L21/027 ,  G03C5/00

CPC classification number: G03F7/039 ,  G03F7/0045 ,  Y10S430/111

Abstract: A lithographic process for fabricating a device is disclosed. An area of radiation sensitive material is formed on a substrate. The radiation sensitive material contains a polymeric component The polymeric component is the copolymerization product of a maleimide monomer and at least two other monomers. Acid labile groups are pendant to one of the monomers with which the maleimide monomer is copolymerized. The acid labile groups are pendant to less than 50 mole percent of the monomers that make up the copolymer. The acid labile groups are not pendant to the maleimide monomer. The radiation sensitive material is patternwise exposed to radiation after it is formed on the substrate. The patternwise exposure transfers an image into the radiation sensitive material. The image is developed into a pattern in the radiation sensitive material. The pattern is then transferred into the substrate.

Abstract translation: 公开了一种用于制造器件的光刻工艺。 辐射敏感材料的区域形成在基底上。 辐射敏感材料含有聚合物组分聚合物组分是马来酰亚胺单体和至少两种其它单体的共聚产物。 酸不稳定基团是与其中共聚有马来酰亚胺单体的单体之一。 酸不稳定基团悬挂于构成共聚物的少于50摩尔％的单体。 酸不稳定基团不垂饰于马来酰亚胺单体。 辐射敏感材料在其形成在基底上之后被图案化地暴露于辐射。 图案曝光将图像转印到辐射敏感材料中。 图像被发展成为辐射敏感材料中的图案。 然后将图案转移到基底中。

公开(公告)号：US5200544A

公开(公告)日：1993-04-06

申请号：US825341

申请日：1992-01-24

Applicant: Francis M. Houlihan ,  Thomas X. Neenan ,  Elsa Reichmanis

Inventor： Francis M. Houlihan ,  Thomas X. Neenan ,  Elsa Reichmanis

IPC: G03F7/039

CPC classification number: G03F7/039

Abstract: A class of resist compositions sensitive to deep ultraviolet radiation includes a resin sensitive to acid and a composition that generates acid upon exposure to such radiation. A group of nitrobenzyl materials is particularly suitable for use as the acid generator.

Abstract translation: 一类对深紫外线辐射敏感的抗蚀剂组合物包括对酸敏感的树脂和暴露于这种辐射时产生酸的组合物。 一组硝基苄基材料特别适合用作酸产生剂。