公开(公告)号：US07811836B2

公开(公告)日：2010-10-12

申请号：US11646142

申请日：2006-12-27

Applicant: Jae-Seok Lee ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Mi-Ae Kim

Inventor： Jae-Seok Lee ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Mi-Ae Kim

IPC: H01L21/00

CPC classification number: G01N23/2258 ,  Y10T436/108331

Abstract: A method of manufacturing a reference sample substrate for analyzing a metal contamination level includes coating an organic silica solution including metal impurities on a semiconductor substrate and forming an oxide layer on the semiconductor substrate by thermally treating the semiconductor substrate having the coated organic silica solution. The metal impurities are substantially uniformly distributed in the oxide layer and the metal impurities are positioned at predetermined portions of the oxide layer.

Abstract translation: 制造用于分析金属污染水平的参考样品基材的方法包括在半导体衬底上涂覆包含金属杂质的有机二氧化硅溶液，并通过热处理具有涂覆的有机二氧化硅溶液的半导体衬底，在半导体衬底上形成氧化物层。 金属杂质基本均匀分布在氧化物层中，金属杂质位于氧化物层的预定部分。

公开(公告)号：US20070000523A1

公开(公告)日：2007-01-04

申请号：US11454829

申请日：2006-06-19

Applicant: Se-Yeon Kim ,  Pil-Kwon Jun ,  Jung-Dae Park ,  Myoung-Ok Han ,  Jea-Wook Kim ,  Seung-Ki Chae ,  Kook-Joo Kim ,  Jae-Seok Lee ,  Yong-Kyun Ko ,  Kwang-Shin Lim ,  Yang-Koo Lee

Inventor： Se-Yeon Kim ,  Pil-Kwon Jun ,  Jung-Dae Park ,  Myoung-Ok Han ,  Jea-Wook Kim ,  Seung-Ki Chae ,  Kook-Joo Kim ,  Jae-Seok Lee ,  Yong-Kyun Ko ,  Kwang-Shin Lim ,  Yang-Koo Lee

IPC: B08B3/04

CPC classification number: H01L21/02071 ,  C11D3/0073 ,  C11D7/10 ,  C11D7/3209 ,  C11D11/0023 ,  H01L27/10885

Abstract: A cleaning composition is disclosed. The cleaning composition comprises about 80 to 99.8999 percent by weight of an ammonium fluoride aqueous solution, about 0.1 to 5 percent by weight of a buffering agent, and about 0.0001 to 15 percent by weight of a corrosion-inhibiting agent. A method of preparing the cleaning composition, a method of cleaning a substrate using the cleaning composition, and a method of manufacturing a semiconductor device using the cleaning composition are also disclosed.

Abstract translation: 公开了一种清洁组合物。 该清洗组合物含有约80-99.8999重量％的氟化铵水溶液，约0.1-5重量％的缓冲剂和约0.0001-15重量％的腐蚀抑制剂。 还公开了一种制备清洁组合物的方法，使用清洁组合物清洁基材的方法，以及使用该清洁组合物制造半导体器件的方法。

公开(公告)号：US20060098102A1

公开(公告)日：2006-05-11

申请号：US10984872

申请日：2004-11-10

Applicant: Jae-seok Lee

Inventor： Jae-seok Lee

IPC: H04N5/232

CPC classification number: H04N5/23203

Abstract: A surveillance system capable of controlling a camera, a monitor, and an extra device using a single remote controller. The electronic device for receiving a video signal transferred from a photographing device and for outputting the video signal to an extra device includes: an input section inputting a control command for controlling the extra device; a controller outputting a control signal corresponding to the control command; and a communication interface receiving the control signal and transferring the received control signal to the extra device.

Abstract translation: 一种能够使用单个遥控器控制摄像机，监视器和额外设备的监控系统。 用于接收从摄影装置传送的视频信号并将视频信号输出到附加装置的电子装置包括：输入部分，输入控制附加装置的控制命令; 输出对应于所述控制指令的控制信号的控制器; 以及通信接口，接收所述控制信号并将所接收的控制信号传送到所述额外设备。

公开(公告)号：US06953389B2

公开(公告)日：2005-10-11

申请号：US10959228

申请日：2004-10-06

Applicant: Jae Seok Lee ,  Kil Sung Lee

Inventor： Jae Seok Lee ,  Kil Sung Lee

IPC: C09G1/02 ,  C11D3/14 ,  C11D7/06 ,  C11D7/08 ,  C11D7/26 ,  C11D11/00 ,  H01L21/302 ,  H01L21/321 ,  H01L21/461 ,  B24B1/00

CPC classification number: C11D3/14 ,  C09G1/02 ,  C11D7/06 ,  C11D7/08 ,  C11D7/263 ,  C11D11/0047 ,  H01L21/3212

Abstract: Metal CMP slurry compositions having relatively low chemical etch rate and relatively high mechanical polishing rate characteristics are provided. The relatively high mechanical polishing rate characteristics are achieved using relatively high concentrations of mechanical abrasive (e.g., ≧8 wt %) in combination with sufficient quantities of a wetting agent to inhibit micro-scratching of underlying surfaces (e.g., insulating layers, conductive vias, . . . ) being polished. The slurry compositions also include a highly stable metal-propylenediaminetetraacetate (M-PDTA) complex, which may operate to inhibit metal-oxide re-adhesion on the metal surface being polished and/or inhibit oxidation of the metal surface by chelating with the surface.

Abstract translation: 提供了具有相对低的化学蚀刻速率和相对高的机械抛光速率特性的金属CMP浆料组合物。 使用相对高浓度的机械磨料（例如> = 8重量％）与足够量的润湿剂组合以抑制下面的表面（例如，绝缘层，导电通孔）的微划痕来实现相对较高的机械抛光速率特性 ，...）被抛光。 浆料组合物还包括高度稳定的金属 - 丙二胺四乙酸酯（M-PDTA）络合物，其可以用于抑制正在抛光的金属表面上的金属氧化物再附着和/或通过与表面螯合来抑制金属表面的氧化。

公开(公告)号：US06488730B2

公开(公告)日：2002-12-03

申请号：US09850209

申请日：2001-05-07

Applicant: Kil Sung Lee ,  Jae Seok Lee ,  Seok Jin Kim ,  Young Ki Lee ,  Tu Won Chang

Inventor： Kil Sung Lee ,  Jae Seok Lee ,  Seok Jin Kim ,  Young Ki Lee ,  Tu Won Chang

IPC: B24D300

CPC classification number: H01L21/31053

Abstract: The present invention relates to a polishing composition comprising 30 to 99 wt % of deionized water, 0.1 to 50 wt % of powder of metallic oxide and 0.01 to 20 wt % of cyclic amine. This polishing composition can be used in a chemical mechanical polishing of thin films in integrated circuit manufacturing and has an effect of minimizing the occurrence of microscratches on the thin film after polishing. Thereby it can be applied to the manufacturing process of highly integrated circuits such as Shallow Trench Isolation.

Abstract translation: 本发明涉及一种抛光组合物，其包含30-99重量％的去离子水，0.1-50重量％的金属氧化物粉末和0.01-20重量％的环胺。 该抛光组合物可用于集成电路制造中的薄膜的化学机械抛光，并且具有最小化抛光后薄膜上的微细纹差的发生的效果。 因此，它可以应用于诸如浅沟槽隔离的高度集成电路的制造过程。

公开(公告)号：US06364919B1

公开(公告)日：2002-04-02

申请号：US09535865

申请日：2000-03-27

Applicant: Kil Sung Lee ,  Jae Seok Lee ,  Seok Jin Kim ,  Tu Won Chang

Inventor： Kil Sung Lee ,  Jae Seok Lee ,  Seok Jin Kim ,  Tu Won Chang

IPC: C09K314

CPC classification number: C09G1/02 ,  C01B13/145 ,  C01B33/1417 ,  C01P2004/51 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C01P2006/22 ,  C09K3/1463

Abstract: Disclosed is a process for preparing metal oxide slurries suitable for the chemical mechanical polishing (CMP) of semiconductor devices. A suspension of metal oxide in water is dispersed at a predetermined pressure through an orifice of a dispersion chamber while two intensifier pumps are used to maintain the pressure applied to the dispersion chamber constantly, resulting in restraining or minimizing the generation of macro particles as large as or larger than 1 &mgr;m. The metal oxide slurries are uniform in particle size with narrow particle size distribution and show excellent polishing performance with a significant reduction in the occurrence frequency of microscratches, so that they are suitable for CMP of ultra-integrated semiconductor devices.

Abstract translation: 公开了一种制备适用于半导体器件的化学机械抛光（CMP）的金属氧化物浆料的方法。 金属氧化物在水中的悬浮液以预定的压力通过分散室的孔分散，同时使用两个增压泵来恒定地施加到分散室上的压力，从而抑制或最小化大颗粒的产生， 或大于1um。 金属氧化物浆料的粒度均匀，粒度分布窄，显示出优异的抛光性能，显着降低了微观尺度的发生频率，因此适用于超集成半导体器件的CMP。

公开(公告)号：US20110088930A1

公开(公告)日：2011-04-21

申请号：US12651191

申请日：2009-12-31

Applicant: Jae-Seok LEE

Inventor： Jae-Seok LEE

IPC: H05K1/02 ,  B32B37/00

CPC classification number: H05K3/10 ,  H05K3/0097 ,  H05K3/061 ,  H05K3/205 ,  H05K3/22 ,  H05K3/28 ,  H05K3/421 ,  H05K3/428 ,  H05K3/4658 ,  H05K2201/09509 ,  H05K2201/09563 ,  H05K2203/054 ,  H05K2203/0571 ,  H05K2203/0574

Abstract: A printed circuit board and a manufacturing method of the same are disclosed. The method includes: preparing a carrier including a primer resin layer formed thereon; forming a circuit pattern on the primer resin layer; stacking the carrier onto an insulating layer such that the circuit pattern is buried in the insulating layer; removing the carrier; forming a via hole in the insulating layer on which the primer resin layer is stacked; and forming a conductive via in the via hole. The conductive via is formed by forming a plating layer in the via hole and on the primer resin layer and removing a portion of the plating layer formed over the primer resin layer.

Abstract translation: 公开了一种印刷电路板及其制造方法。 该方法包括：制备其上形成有底漆树脂层的载体; 在底漆树脂层上形成电路图案; 将载体堆叠在绝缘层上，使得电路图案埋在绝缘层中; 移除载体; 在其上层叠有底漆树脂层的绝缘层中形成通孔; 以及在所述通孔中形成导电通孔。 导电孔通过在通孔中和底漆树脂层上形成镀层而除去在底漆树脂层上形成的镀层的一部分而形成。

公开(公告)号：US07880138B2

公开(公告)日：2011-02-01

申请号：US11963662

申请日：2007-12-21

Applicant: Jae-Seok Lee ,  Heung-Bin Lim ,  Won-Kyung Ryu ,  Seung-Ki Chae ,  Yang-Koo Lee ,  Hun-Jung Yi

Inventor： Jae-Seok Lee ,  Heung-Bin Lim ,  Won-Kyung Ryu ,  Seung-Ki Chae ,  Yang-Koo Lee ,  Hun-Jung Yi

IPC: H01J49/26 ,  G01N21/00

CPC classification number: G01N21/94 ,  G01N21/718 ,  G01N21/9501 ,  H01L21/6838 ,  H01L21/68728 ,  H01L21/68785

Abstract: Provided is an apparatus and method for analyzing contaminants on a wafer. The apparatus includes: a wafer holder for supporting a wafer on which contaminants to be analyzed are located, a laser ablation device for irradiating a laser to the wafer to extract a discrete specimen from the wafer, an analysis cell for collecting a discrete specimen from the surface of the wafer by irradiating the laser, and an analysis device connected to the analysis cell for analyzing contaminants from the collected discrete specimen.

Abstract translation: 提供了一种用于分析晶片上的污染物的装置和方法。 该装置包括：晶片保持器，用于支撑要分析的污染物所在的晶片;激光烧蚀装置，用于将激光照射到晶片以从晶片提取离散的样本;分析单元，用于从 通过照射激光的晶片的表面，以及连接到分析单元的分析装置，用于分析来自收集的离散样本的污染物。

公开(公告)号：US20050227363A1

公开(公告)日：2005-10-13

申请号：US10952510

申请日：2004-09-28

Applicant: Dong-won Hwang ,  Pil-kwon Jun ,  Sung-jae Lee ,  Jae-seok Lee ,  Sang-mun Chon ,  In-hoi Doh

Inventor： Dong-won Hwang ,  Pil-kwon Jun ,  Sung-jae Lee ,  Jae-seok Lee ,  Sang-mun Chon ,  In-hoi Doh

IPC: H01L21/302 ,  G01N33/00

CPC classification number: H01L21/02057

Abstract: Monitoring metal contamination of a rinsing solution may include providing a sample of the rinsing solution, and mixing the sample of the rinsing solution with a monitoring reagent to provide a monitoring mixture. A property of the monitoring mixture that is dependent on a concentration of a metal in the rinsing solution may then be measured. More particularly, the property of the monitoring mixture may be an absorbency of the monitoring mixture with respect to electromagnetic radiation transmitted through the monitoring mixture. Related systems and reagents are also discussed.

Abstract translation: 监测冲洗溶液的金属污染可以包括提供冲洗溶液的样品，并将漂洗溶液的样品与监测试剂混合以提供监测混合物。 然后可以测量依赖于冲洗溶液中的金属浓度的监测混合物的性质。 更具体地，监测混合物的性质可以是监测混合物相对于透过监测混合物的电磁辐射的吸收性。 还讨论了相关系统和试剂。

公开(公告)号：US20110169517A1

公开(公告)日：2011-07-14

申请号：US13062340

申请日：2009-06-19

Applicant: Sang-Hee Kim ,  Sang Hyun Lee ,  Jae Seok Lee ,  Chun Sik Woo ,  Jae In Lee

Inventor： Sang-Hee Kim ,  Sang Hyun Lee ,  Jae Seok Lee ,  Chun Sik Woo ,  Jae In Lee

IPC: G01R31/00

CPC classification number: G01R3/00 ,  G01R1/06727 ,  G01R1/06744

Abstract: Provided are a micro-electro-mechanical system (MEMS) probe card and a method for manufacturing thereof. The MEMS probe card includes a substrate provide with a via hole filler conductor or a via hole filled with the resistor, the resistive film formed on the via hole and the substrate, the insulating film and the resistive film formed on the resistive film and the substrate, and the electrode formed on the substrate to cover the insulating filmAs such, by means of a micro-electro-mechanical system (MEMS) probe card and a method for manufacturing thereof, the precise resistance value can be obtained and used for the semiconductor IC and others in the event of significant change in power.

Abstract translation: 提供了一种微电子机械系统（MEMS）探针卡及其制造方法。 MEMS探针卡包括：衬底，其提供通孔填充导体或填充有电阻器的通孔，形成在通孔上的电阻膜和衬底，绝缘膜和形成在电阻膜和衬底上的电阻膜 以及形成在基板上以覆盖绝缘膜的电极。因此，通过微电子机械系统（MEMS）探针卡及其制造方法，可以获得精确的电阻值并用于半导体 IC和其他在权力发生重大变化的情况下。