公开(公告)号：US20130098882A1

公开(公告)日：2013-04-25

申请号：US13595292

申请日：2012-08-27

Applicant: Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

Inventor： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

IPC: B23K15/00

CPC classification number: H01J37/3233 ,  G21K5/00 ,  H05H1/46 ,  H05H7/001

Abstract: A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma.

Abstract translation: 通过电子束在工件处理室中产生等离子体的等离子体反应器具有电子束源和分段的束流，其形状是为了促进电子束产生的等离子体中的均匀性。

公开(公告)号：US20130098552A1

公开(公告)日：2013-04-25

申请号：US13595252

申请日：2012-08-27

Applicant: Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

Inventor： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

IPC: C23F1/08

CPC classification number: H01J37/3233 ,  H01J2237/06366

Abstract: A plasma, reactor that relies on an electron beam as a plasma source employs a profiled electron beam extraction grid in an electron beam source to improve uniformity.

Abstract translation: 依靠电子束作为等离子体源的等离子体反应器采用电子束源中的形状电子束提取栅格来改善均匀性。

公开(公告)号：US20120145326A1

公开(公告)日：2012-06-14

申请号：US13401572

申请日：2012-02-21

Applicant: James D. CARDUCCI ,  Andrew NGUYEN ,  Ajit BALAKRISHNA ,  Michael C. KUTNEY

Inventor： James D. CARDUCCI ,  Andrew NGUYEN ,  Ajit BALAKRISHNA ,  Michael C. KUTNEY

IPC: H05H1/24 ,  B44C1/22

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32623 ,  Y10T428/13

Abstract: A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

公开(公告)号：US08118938B2

公开(公告)日：2012-02-21

申请号：US13191850

申请日：2011-07-27

Applicant: James D. Carducci ,  Andrew Nguyen ,  Ajit Balakrishna ,  Michael C. Kutney

Inventor： James D. Carducci ,  Andrew Nguyen ,  Ajit Balakrishna ,  Michael C. Kutney

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/06 ,  C23C16/22

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32623 ,  Y10T428/13

Abstract: A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

公开(公告)号：US20120034136A1

公开(公告)日：2012-02-09

申请号：US13050481

申请日：2011-03-17

Applicant: Kenneth S. Collins ,  Zhigang Chen ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Andrew Nguyen

Inventor： Kenneth S. Collins ,  Zhigang Chen ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Andrew Nguyen

IPC: B01J19/08

CPC classification number: H01J37/32091 ,  H01J37/32577 ,  H05H1/46 ,  H05H2001/4622

Abstract: A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.

Abstract translation: 同轴VHF功率耦合器包括在功率耦合器的中空圆柱形外导体内的导电元件，并且包围功率耦合器的中空圆柱形内导体的轴向部分。 与中空圆柱形外部导体接触的多个电机驱动器连接到可移动导电元件的相应位置。

公开(公告)号：US07754997B2

公开(公告)日：2010-07-13

申请号：US11924086

申请日：2007-10-25

Applicant: Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, Jr.

Inventor： Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, Jr.

IPC: B23K9/00

CPC classification number: H01J37/321 ,  H01J37/32633 ,  H01J37/3266

Abstract: An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.

Abstract translation: 一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。 在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。 每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

公开(公告)号：US07585384B2

公开(公告)日：2009-09-08

申请号：US12201156

申请日：2008-08-29

Applicant: Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, Jr.

Inventor： Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, Jr.

IPC: C23C1/00 ,  H01L21/306 ,  C23C16/00

CPC classification number: H01J37/321 ,  H01J37/32633 ,  H01J37/3266

Abstract: An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.

Abstract translation: 一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。 在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。 每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

公开(公告)号：US08920597B2

公开(公告)日：2014-12-30

申请号：US13047052

申请日：2011-03-14

Applicant: Kartik Ramaswamy ,  Igor Markovsky ,  Zhigang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

Inventor： Kartik Ramaswamy ,  Igor Markovsky ,  Zhigang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32018 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32587 ,  H01J37/32596 ,  H01J37/3266 ,  H01J37/32715 ,  H01J37/32834

Abstract: The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.

Abstract translation: 本公开涉及一种通过具有折叠结构和对称功率分布的阻抗匹配同轴谐振器施加VHF功率的Capactively coupled等离子体源。

公开(公告)号：US08876024B2

公开(公告)日：2014-11-04

申请号：US11972072

申请日：2008-01-10

Applicant: James D. Carducci ,  Olga Regelman ,  Kallol Bera ,  Douglas A. Buchberger ,  Paul Brillhart

Inventor： James D. Carducci ,  Olga Regelman ,  Kallol Bera ,  Douglas A. Buchberger ,  Paul Brillhart

IPC: B05B1/14 ,  C23C16/455 ,  H01J37/32 ,  C23C16/44

CPC classification number: H01J37/3244 ,  B32B43/00 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45591 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/3343 ,  Y10T29/49815

Abstract: The present invention generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.

Abstract translation: 本发明通常包括可用于将处理气体供应到处理室中的加热喷头组件。 处理室可以是蚀刻室。 当处理气体从处理室排出时，衬底的均匀处理可能是困难的。 当处理气体从衬底被拉离并且朝向真空泵时，在蚀刻的情况下，等离子体在衬底上可能不均匀。 不均匀的等离子体可能导致不均匀的蚀刻。 为了防止不均匀的蚀刻，喷头组件可以分成两个区域，每个区域具有独立可控的气体引入和温度控制。 第一区域对应于衬底的周边，而第二区域对应于衬底的中心。 通过独立地控制温度和通过喷头区域的气体流动，可以增加基板的蚀刻均匀性。

公开(公告)号：US08440019B2

公开(公告)日：2013-05-14

申请号：US13607425

申请日：2012-09-07

Applicant: James D. Carducci ,  Andrew Nguyen ,  Ajit Balakrishna ,  Michael C. Kutney

Inventor： James D. Carducci ,  Andrew Nguyen ,  Ajit Balakrishna ,  Michael C. Kutney

IPC: C23C16/455 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32623 ,  Y10T428/13

Abstract: A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

Abstract translation: 等离子体处理室具有具有集成流量均衡器的下衬套。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 集成流量均衡器被配置为使从腔室经由下衬套排出的处理气体的流量相等。