-
公开(公告)号：US20120134633A1
公开(公告)日：2012-05-31
申请号：US13378352
申请日：2010-04-14
Applicant: Jun Ushida , Junichi Fujikata
Inventor： Jun Ushida , Junichi Fujikata
CPC classification number: G02B6/12004 , G02B6/122 , G02B2006/12097 , G02B2006/12195 , G02F1/025 , G02F1/2257 , G02F2201/063 , G02F2201/12 , G02F2202/104 , Y10T29/49826
Abstract: Provided is a connecting channel that has manufacturing tolerance, can suppress light loses, improves reliability of the connecting channel, and connects an optical device and an optical waveguide. The connecting channel includes first silicon layer (3) that has rib-shaped part (3′) extending in a longitudinal direction of the connecting channel, and second silicon layer (6) that is stacked on first silicon layer (3) to partially overlap rib-shaped part 3′, and extends in the longitudinal direction. Second silicon layer (6) has tapered part (W) tapered toward one end in the longitudinal direction, and is located away from an upper portion of rib-shaped part (3′) at an end surface of one end in the longitudinal direction.
Abstract translation: 提供具有制造公差的连接通道，可以抑制光损失，提高连接通道的可靠性，并且连接光学装置和光波导。 连接通道包括：第一硅层（3），其具有在连接通道的纵向方向上延伸的肋状部分（3'），以及第二硅层（6），其堆叠在第一硅层（3）上以部分重叠 肋状部3'，并且在纵向方向上延伸。 第二硅层（6）具有沿长度方向的一端逐渐变细的锥形部（W），并且在长度方向的一端的端面处远离肋状部（3'）的上部。
-
公开(公告)号：US20120003767A1
公开(公告)日：2012-01-05
申请号：US13256087
申请日：2010-02-15
Applicant: Junichi Fujikata , Toshio Baba , Jun Ushida
Inventor： Junichi Fujikata , Toshio Baba , Jun Ushida
CPC classification number: G02F1/025 , G02F1/2257
Abstract: An optical modulator according to the present invention is configured at least by a semiconductor layer subjected to a doping process so as to exhibit a first conductivity type, and a semiconductor layer subjected to a doping process so as to exhibit a second conductivity type. Further, in the optical modulator, at least the first conductivity type semiconductor layer, a dielectric layer, the second conductivity type semiconductor layer, and a transparent electrode optically transparent in at least a near-infrared wavelength region are laminated in order.
Abstract translation: 根据本发明的光调制器至少由经受掺杂工艺的半导体层构成以呈现第一导电类型，以及经受掺杂工艺以显示第二导电类型的半导体层。 此外，在光调制器中，依次层叠至少第一导电型半导体层，电介质层，第二导电型半导体层和在至少近红外波长区域中透光的透明电极。
-
公开(公告)号：US20110176762A1
公开(公告)日：2011-07-21
申请号：US13120625
申请日：2009-11-10
Applicant: Junichi Fujikata , Toshio Baba , Jun Ushida
Inventor： Junichi Fujikata , Toshio Baba , Jun Ushida
CPC classification number: G02F1/025 , G02F2001/0152
Abstract: An optical modulator is formed with at least a portion of a semiconductor layer (8) that has undergone a doping process to exhibit a first conductivity and at least a portion of a semiconductor layer (9) that has undergone a doping process to exhibit a second conductivity overlapping with a dielectric layer (11) interposed. The surface of the semiconductor layer (8) of first conductivity has an uneven form in the portion in which the semiconductor layer (8) that exhibits first conductivity and the semiconductor layer (9) that exhibits second conductivity overlap with the dielectric layer (11) interposed. The dielectric layer (11) is formed on the semiconductor layer (8) of first conductivity that has the uneven form, and the semiconductor layer (9) of second conductivity is formed on the dielectric layer (11).
Abstract translation: 光调制器形成有至少部分已经经历掺杂工艺以显示第一导电性的半导体层（8）的至少一部分，以及已经经历掺杂工艺的半导体层（9）的至少一部分以显示第二导电性 导电性与介电层（11）重叠。 在具有第一导电性的半导体层（8）和表现出第二导电性的半导体层（9）与电介质层（11）重叠的部分中，第一导电性半导体层（8）的表面具有凹凸形状， 插入。 电介质层（11）形成在具有不平坦形状的第一导电性半导体层（8）上，并且在电介质层（11）上形成第二导电性半导体层（9）。
-
公开(公告)号：US20110012221A1
公开(公告)日：2011-01-20
申请号：US12919638
申请日：2009-03-09
Applicant: Junichi Fujikata , Toru Tatsumi , Akihito Tanabe , Jun Ushida , Daisuke Okamoto , Kenichi Nishi
Inventor： Junichi Fujikata , Toru Tatsumi , Akihito Tanabe , Jun Ushida , Daisuke Okamoto , Kenichi Nishi
IPC: H01L31/105
CPC classification number: H01L31/105 , G02B6/12004 , G02B6/4204 , G02B6/4214 , H01L31/022408 , H01L31/028 , H01L31/03529 , Y02E10/547
Abstract: The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode. In order to solve said problems, according to the present invention, there is provided a vertical type pin-SiGe photodiode having a structure which is embedded in a groove formed in a part of a Si layer, in which a p-type or n-type doped layer is formed in a lower section of the groove, and in which a i-SiGe layer having a rectangular shape or a reverse tapered shape is formed on a layered structure formed by laminating a i-Si layer and a SiGe buffer layer on the lower section and the side wall of the groove. Further, in an optical connection section with a Si waveguide, impedance matching is effected by the layered structure composed of the i-Si layer and the SiGe buffer layer, and an upper metal layer is separated therefrom so that a poly-Si bridge structure is employed to electrically connect the upper metal layer therewith.
Abstract translation: Ge层与Si层之间的晶格失配大至4％左右。 因此，当Ge层在Si层上生长时，引入穿透位错以在p-i-n结处引起漏电流。 因此，光检测灵敏度降低，并且元件的可靠性也降低。 此外，在与Si波导的连接中，还存在由于Si和Ge之间的折射率的差异以及由金属电极引起的吸收损耗的反射损耗的问题。 为了解决所述问题，根据本发明，提供了一种垂直型pin-SiGe光电二极管，其具有嵌入到形成在Si层的一部分中的凹槽中的结构，其中p型或n- 在沟槽的下部形成有型掺杂层，其中在通过层叠i-Si层和SiGe缓冲层而形成的层叠结构上形成具有矩形或倒锥形的i-SiGe层 凹槽的下部和侧壁。 此外，在具有Si波导的光学连接部中，通过由i-Si层和SiGe缓冲层构成的层叠结构实现阻抗匹配，并且将上部金属层与其分离，使得多Si桥结构 用于将上部金属层电连接到其上。
-
公开(公告)号：US20100119192A1
公开(公告)日：2010-05-13
申请号：US12598162
申请日：2008-04-30
Applicant: Junichi Fujikata , Jun Ushida , Daisuke Okamoto , Kenichi Nishi , Keishi Ohashi , Tai Tsuchizawa , Seiichi Itabashi
Inventor： Junichi Fujikata , Jun Ushida , Daisuke Okamoto , Kenichi Nishi , Keishi Ohashi , Tai Tsuchizawa , Seiichi Itabashi
IPC: G02B6/12 , H01L31/0232
CPC classification number: H01L31/022408 , B82Y20/00 , G02B6/1226 , G02B6/4204 , G02B6/4214 , H01L31/02325
Abstract: In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.
Abstract translation: 在波导路耦合型光电二极管中，相邻地配置有半导体光吸收层和光波导路径芯。 由至少一层形成的电极安装在半导体光吸收层和光波导路径芯的边界部分。 电极以（1/100）λ至λ[λ：通过光波导路径芯透射的光的波长]的间隔布置。 至少一部分电极嵌入在半导体光吸收层中。 从半导体光吸收层的表面嵌入深度是不大于λ/（2ns）[ns：半导体光吸收层的折射率]的值。 至少一层电极由可以表面等离子体激发的材料构成。
-
Patent Agency Ranking
公开(公告)号：US20090285522A1
公开(公告)日：2009-11-19
申请号：US11813417
申请日：2006-01-06
Applicant: Akiko Gomiyou , Jun Ushida , Hirohito Yamada
Inventor： Akiko Gomiyou , Jun Ushida , Hirohito Yamada
CPC classification number: G02B6/1225 , B82Y20/00 , G02B6/126
Abstract: There is provided an optical device and an optical waveguide composed of a photonic crystal in which two optical waveguide modes that are orthogonal to a light propagation direction can be used, whereby design latitude is increased.In the optical waveguide device composed of a photonic crystal, in a dispersion relationship of the photonic crystal, light is propagated using a refractive index guide mode that is a minimum frequency optical waveguide mode. Alternatively, two optical waveguide modes that are orthogonal to light propagation direction are used, a linear defect waveguide mode is used for the first optical waveguide mode; and light is propagated in the second light guide mode by using a refractive index guide mode that is a minimum frequency optical waveguide mode in a dispersion relationship of the photonic crystal. Alternatively, in a dispersion relationship of the photonic crystal, light is propagated in two optical waveguide modes that are orthogonal to a light propagation direction using a refractive index guide mode that is a minimum frequency optical waveguide mode.
Abstract translation: 提供一种光学器件和由光子晶体组成的光波导，其中可以使用与光传播方向正交的两个光波导模式，从而增加设计的纬度。 在由光子晶体构成的光波导装置中，以光子晶体的色散关系，使用作为最小频率光波导模式的折射率引导模式传播光。 或者，使用与光传播方向正交的两个光波导模式，对于第一光波导模式使用线性缺陷波导模式; 并且通过使用作为光子晶体的色散关系中的最小频率光波导模式的折射率引导模式，以第二导光模式传播光。 或者，在光子晶体的色散关系中，使用作为最小频率光波导模式的折射率引导模式，在与光传播方向正交的两个光波导模式中传播光。
-
公开(公告)号：US20060261324A1
公开(公告)日：2006-11-23
申请号：US10543649
申请日：2003-12-22
Applicant: Jun Ushida , Hiroshito Yamada
Inventor： Jun Ushida , Hiroshito Yamada
CPC classification number: G02F1/365 , G02F1/3515 , G02F2202/32
Abstract: In an optical circuit including multi-dimensional photonic crystals, in which the optical circuit has a structure (33), such as a light emitting member or a light receiving member, having a natural resonance frequency, another structure (34) having a natural resonance frequency slightly differing from the natural resonance frequency of the structure (33) is arranged in the vicinity of the structure (33) to control the directivity of localization and propagation of an electromagnetic field, light emission and light reception in a spatial region including the above structures in the multi-dimensional photonic crystals, in order to permit functional operations to be realized.
Abstract translation: 在包括多维光子晶体的光电路中，其中光电路具有具有天然共振频率的诸如发光部件或光接收部件的结构（33），具有天然共振的另一结构（34） 与结构（33）的固有谐振频率稍微不同的频率被布置在结构（33）附近，以控制在包括上述的空间区域中的电磁场，发光和光接收的定位和传播的方向性 多维光子晶体中的结构，以便实现功能操作。
-
公开(公告)号：US20130064491A1
公开(公告)日：2013-03-14
申请号：US13582841
申请日：2011-03-01
Applicant: Junichi Fujikata , Motofumi Saitoh , Jun Ushida , Akio Toda
Inventor： Junichi Fujikata , Motofumi Saitoh , Jun Ushida , Akio Toda
Abstract: To provide an optical modulator having a reduced size and reduced power consumption and capable of being easily connected to a waveguide and a method of manufacturing the optical modulator. The optical modulator has at least semiconductor layer (8) having a rib-shaped portion and doped so as to be of a first conduction type, dielectric layer (11) laid on first-conduction-type semiconductor layer (8), and semiconductor layer (9) laid on dielectric layer (11), having the width at the side opposite from dielectric layer (11) increased relative to the width of the rib-shaped portion, and doped so as to be of a second conduction type.
Abstract translation: 提供具有减小的尺寸和降低的功率消耗并且能够容易地连接到波导的光学调制器和制造光学调制器的方法。 光调制器至少具有肋状部分并掺杂成第一导电类型的半导体层（8），布置在第一导电型半导体层（8）上的电介质层（11）和半导体层 放置在电介质层（11）上的与介电层（11）相对的宽度相对于肋状部分的宽度增加并且掺杂成第二导电类型的放电层（9）。
-
19.发明授权公开(公告)号：US08363989B2
公开(公告)日：2013-01-29
申请号：US12919461
申请日：2009-02-10
Applicant: Daisuke Okamoto , Kenichi Nishi , Junichi Fujikata , Jun Ushida
Inventor： Daisuke Okamoto , Kenichi Nishi , Junichi Fujikata , Jun Ushida
CPC classification number: H01L25/0657 , H01L23/48 , H01L23/645 , H01L24/13 , H01L24/16 , H01L24/48 , H01L25/167 , H01L2224/13099 , H01L2224/16145 , H01L2224/48095 , H01L2224/48227 , H01L2224/73207 , H01L2225/0651 , H01L2225/06513 , H01L2225/06531 , H01L2225/06534 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/19041 , H01L2924/19042 , H01L2924/30105 , H01L2924/30107 , Y10T29/41 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chip 1 and an optical interconnection chip 2. The optical interconnection chip 2 includes an optical element formed thereon (for instance, a photo-sensitive element, a luminous element, or an optical modulator) which has a function relating to signal conversion between light and electricity. The semiconductor chip 1 includes a transmission section 3 (for instance, a coil or an inductor) to transmit signals in a non-contact manner, and a connection section 4 (for instance, a bump) to electrically connect with the optical element.
Abstract translation: 提供一种半导体光互连装置，其能够在层叠半导体芯片之间的层叠半导体芯片之间传输信号，其结构是通过层叠了通过结合到光互连芯片而被高度功能化的半导体芯片。 半导体光互连装置包括半导体芯片1和光互连芯片2.光互连芯片2包括形成在其上的光学元件（例如，光敏元件，发光元件或光调制器），其具有 功能与光和电之间的信号转换有关。 半导体芯片1包括以非接触方式传输信号的传输部分3（例如，线圈或电感器）以及与光学元件电连接的连接部分4（例如，凸块）。
-
公开(公告)号：US20100320496A1
公开(公告)日：2010-12-23
申请号：US12919546
申请日：2009-02-26
Applicant: Kenichi Nishi , Junichi Fujikata , Jun Ushida , Daisuke Okamoto
Inventor： Kenichi Nishi , Junichi Fujikata , Jun Ushida , Daisuke Okamoto
IPC: H01L33/62
CPC classification number: G02B6/12002 , G02B6/43 , H01L21/76898 , H01L23/481 , H01L2224/05 , H01L2224/0557 , H01L2224/05571 , H01L2224/08145 , H01L2224/80001 , H01L2224/80357 , H01L2224/80895 , H01L2224/80896 , H01L2924/0002 , H01L2924/12044 , H01L2924/00014 , H01L2924/00012 , H01L2224/05552
Abstract: A semiconductor device comprises a semiconductor layer having a semiconductor integrated circuit, which is for processing an electrical signal, on a semiconductor substrate and an optical interconnect layer for transmitting an optical signal are joined. Control of modulation of the optical signal transmitted in the optical interconnect layer is performed by an electrical signal from the semiconductor layer, and an electrical signal generated by reception of light in the optical interconnect layer is transmitted to the semiconductor layer. The optical interconnect layer is disposed on the underside of the semiconductor substrate.
Abstract translation: 半导体器件包括具有用于处理电信号的半导体集成电路的半导体层，半导体衬底和用于发射光信号的光互连层的半导体层。 通过来自半导体层的电信号执行在光学互连层中发送的光信号的调制的控制，并且通过在光学互连层中的光的接收而产生的电信号被传输到半导体层。 光学互连层设置在半导体衬底的下侧。
-
-
-
-
-
-
-
-
-
Search Results
36
records
(took 0.031 seconds)
