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    Semiconductor optical device including spot size conversion region
    13.
    发明申请
    Semiconductor optical device including spot size conversion region 审中-公开
    半导体光学器件包括光斑尺寸转换区域

    公开(公告)号：US20050157766A1

    公开(公告)日：2005-07-21

    申请号：US10864059

    申请日：2004-06-09

    Applicant: Hyeon-Soo Kim ,  Young-Churl Bang ,  Jung-Kee Lee ,  Eun-Hwa Lee ,  Jun-Youn Kim

    Inventor： Hyeon-Soo Kim ,  Young-Churl Bang ,  Jung-Kee Lee ,  Eun-Hwa Lee ,  Jun-Youn Kim

    IPC: H01S5/026 ,  G02B6/122 ,  G02B6/14 ,  H01S5/00 ,  H01S5/10 ,  H01S5/223 ,  H01S5/50

    CPC classification number: G02B6/1228 ,  H01S5/1014 ,  H01S5/1025 ,  H01S5/1064 ,  H01S5/2231 ,  H01S5/50

    Abstract: A semiconductor optical device including an SSC region includes a semiconductor substrate, a lower clad layer grown on the semiconductor substrate, and an upper clad layer grown on the lower clad layer. The semiconductor optical device with an SSC (Spot Size Conversion) area includes a gain area including an active layer grown between the lower clad layer and the upper clad layer to generate/amplify an optical signal; and an SSC (Spot Size Conversion) area including a waveguide layer extended from the active layer positioned between the lower and upper clad layers, such that it performs a spot size conversion (SSC) process of the optical signal generated from the gain area and generates the SSC-processed optical signal. The waveguide layer of the SSC area is configured to gradually reduce its thickness in proportion to a distance from the active layer, and the upper clad layer is etched in the form of a taper structure such that the taper structure has a narrower width in proportion to a distance from one end of the semiconductor optical device having the gain area to the other end of the semiconductor optical device having the SSC area.

    Abstract translation: 包括SSC区域的半导体光学器件包括半导体衬底，在半导体衬底上生长的下覆盖层和在下包层上生长的上覆层。 具有SSC（点尺寸转换）区域的半导体光学器件包括增益区域，包括在下包层和上覆层之间生长的有源层，以产生/放大光信号; 和SSC（点尺寸转换）区域，包括从位于下包层和上包层之间的有源层延伸的波导层，使得其执行从增益区域产生的光信号的光斑尺寸转换（SSC）处理，并产生 经SSC处理的光信号。 SSC区域的波导层被配置成与有源层的距离成比例地逐渐减小其厚度，并且上部包层以锥形结构的形式被蚀刻，使得锥形结构具有与 从具有增益区域的半导体光学器件的一端到具有SSC区域的半导体光学器件的另一端的距离。

    Wavelength locked integrated optical source structure using multiple microcavity
    14.
    发明授权
    Wavelength locked integrated optical source structure using multiple microcavity 失效
    波长锁定集成光源结构采用多个微腔

    公开(公告)号：US06798799B2

    公开(公告)日：2004-09-28

    申请号：US10095419

    申请日：2002-03-11

    Applicant: Dong-Hoon Jang ,  Dong-Soo Bang ,  Jung-Kee Lee

    Inventor： Dong-Hoon Jang ,  Dong-Soo Bang ,  Jung-Kee Lee

    IPC: H01S304

    CPC classification number: H01S5/026 ,  H01S5/02252 ,  H01S5/0264 ,  H01S5/0687 ,  H01S5/1085 ,  H01S5/125

    Abstract: A wavelength-locked, integrated optical signal source structure using a semiconductor laser device is disclosed. The optical source structure has a semiconductor laser formed on a semiconductor substrate, and an etched portion coupled with an output end of the semiconductor laser. The etched portion is configured to pass on a first amount of light beam radiated by the semiconductor laser, and to reflect a second amount of light beam by a given reflection angle. A multiple microcavity is formed in a position spaced apart from the etched portion, and the first amount of light beam is incident upon the multiple microcavity. The optical source structure has a first optical detector for detecting the first amount of light beam passing through the multiple microcavity, and a second optical detector for detecting the second amount of light beam reflected by a slanted, reflecting surface portion of the etched portion. The relative change in the light intensity in the first and second optical detectors is measured out to maintain a constant optical wavelength.

    Abstract translation: 公开了一种使用半导体激光器件的波长锁定集成光信号源结构。 光源结构具有形成在半导体衬底上的半导体激光器和与半导体激光器的输出端耦合的蚀刻部分。 蚀刻部分被配置为通过由半导体激光器辐射的第一量光束并且以给定的反射角度反射第二量的光束。 多个微腔形成在与蚀刻部分间隔开的位置，并且第一量光束入射到多个微腔上。 光源结构具有用于检测通过多个微腔的第一光束量的第一光学检测器和用于检测被蚀刻部分的倾斜的反射表面部分反射的第二光束量的第二光学检测器。 测量第一和第二光学检测器中的光强度的相对变化以保持恒定的光学波长。

    Method of fabricating a high power semiconductor laser with self-aligned ion implantation
    16.
    发明授权
    Method of fabricating a high power semiconductor laser with self-aligned ion implantation 有权
    制造具有自对准离子注入的大功率半导体激光器的方法

    公开(公告)号：US6165811A

    公开(公告)日：2000-12-26

    申请号：US195690

    申请日：1998-11-19

    Applicant: Jung Kee Lee ,  Kyung Hyun Park ,  Ho Sung Cho ,  Eun Soo Nam ,  Dong Hoon Jang

    Inventor： Jung Kee Lee ,  Kyung Hyun Park ,  Ho Sung Cho ,  Eun Soo Nam ,  Dong Hoon Jang

    IPC: H01S5/30 ,  H01S5/20 ,  H01S5/22 ,  H01L21/00

    CPC classification number: H01S5/22 ,  H01S5/2068 ,  H01S5/2081 ,  H01S5/209

    Abstract: A method of fabricating a semiconductor laser comprises the steps of sequentially depositing a lower cladding layer, an active layer, a first upper cladding layer, an etching stop layer, a second upper cladding layer and an ohmic contact layer over a compound semiconductor substrate, forming an etching mask over the ohmic contact layer so as to expose channel regions and to shield the ridge regions between the channel regions, performing wet etching to etch the ohmic contact layer and the second upper cladding layer so as to expose the etching stop layer so as to form the channels and the ridges having narrower widths than the parts of the etching mask shielding the ridge regions, and implanting dopant ions into the parts of the first upper cladding layer and the active layer below the channels to form ion-implanted regions by using the etching mask as the ion implantation mask.

    Abstract translation: 一种制造半导体激光器的方法包括以下步骤：在化合物半导体衬底上依次沉积下包层，有源层，第一上覆层，蚀刻停止层，第二上覆层和欧姆接触层，形成 在欧姆接触层上的蚀刻掩模，以暴露沟道区域并屏蔽沟道区域之间的脊区域，执行湿蚀刻以蚀刻欧姆接触层和第二上包层，以暴露蚀刻停止层，以便 以形成通道和脊部，其宽度比屏蔽脊区域的蚀刻掩模的部分窄，并且将掺杂剂离子注入到沟道下方的第一上包层和活性层的部分中，以通过使用 蚀刻掩模作为离子注入掩模。

    Semiconductor laser device and method for manufacturing the same
    17.
    发明授权
    Semiconductor laser device and method for manufacturing the same 失效
    半导体激光装置及其制造方法

    公开(公告)号：US5504768A

    公开(公告)日：1996-04-02

    申请号：US161422

    申请日：1993-12-06

    Applicant: Chan-Yong Park ,  Ji-Beom Yoo ,  Kyung-Hyun Park ,  Hong-Man Kim ,  Dong-Hoon Jang ,  Jung-Kee Lee

    Inventor： Chan-Yong Park ,  Ji-Beom Yoo ,  Kyung-Hyun Park ,  Hong-Man Kim ,  Dong-Hoon Jang ,  Jung-Kee Lee

    IPC: H01S5/00 ,  H01S5/042 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S3/18 ,  H01L21/31

    CPC classification number: H01S5/22 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2081

    Abstract: A method for manufacturing the semiconductor laser device comprising the steps of sequentially forming an active layer, a photo-waveguide layer, a cladding layer, and an ohmic contact layer on an upper surface of an InP substrate; forming a first patterned dielectric layer on the ohmic contact layer; depositing a patterned photoresist on the ohmic contact layer to define a p- electrode stripe layer; forming the p- electrode stripe layer only on a part of the ohmic contact layer; performing an annealing process; etching back the layers until the photo-waveguide layer is exposed, using the first patterned dielectric layer and the p- electrode stripe layer as an etching mask, to form a ridge; depositing a second dielectric layer on the substrate formed thus; selectively removing the second dielectric layer to form a contact hole on the p- electrode stripe layer; coating a bonding pad metal layer on the second dielectric layer and in the contact hole; and coating an n- electrode metal layer on bottom surface of the substrate. Since ohmic contact resistance is lowered, thermal generation and threshold current of oscillation are decreased. As a result, operating characteristics of the laser device can be largely improved.

    Abstract translation: 一种制造半导体激光器件的方法，包括以下步骤：在InP衬底的上表面上依次形成有源层，光波导层，包层和欧姆接触层; 在所述欧姆接触层上形成第一图案化电介质层; 在欧姆接触层上沉积图案化的光致抗蚀剂以限定p-电极条纹层; 仅在欧姆接触层的一部分上形成p-电极条纹层; 进行退火处理; 使用第一图案化电介质层和p-电极条纹层作为蚀刻掩模，蚀刻层，直到光波导层被曝光，以形成脊; 在由此形成的衬底上沉积第二介电层; 选择性地去除所述第二电介质层以在所述p电极条带层上形成接触孔; 在所述第二电介质层和所述接触孔中涂覆焊垫金属层; 并在衬底的底表面上涂覆n-电极金属层。 由于欧姆接触电阻降低，所以发热和振荡的阈值电流降低。 结果，可以大大提高激光器件的工作特性。

    Method and mobile terminal for adjusting focus of a projected image
    18.
    发明授权
    Method and mobile terminal for adjusting focus of a projected image 有权
    用于调整投影图像焦点的方法和移动终端

    公开(公告)号：US08902215B2

    公开(公告)日：2014-12-02

    申请号：US13592901

    申请日：2012-08-23

    Applicant: Byeong-Hoon Park ,  Jung-Kee Lee

    Inventor： Byeong-Hoon Park ,  Jung-Kee Lee

    IPC: G09G5/00 ,  G09G3/00

    CPC classification number: G09G3/002 ,  G09G2320/0693 ,  G09G2354/00

    Abstract: A method and mobile terminal are provided for focus adjustment. The mobile terminal includes a projector module for projecting an image onto an external screen. The mobile terminal also includes a motion detection sensor for detecting motion of the mobile terminal. The mobile terminal further includes a controller for determining whether the motion detected by the motion detection sensor corresponds to activation of a focus adjustment mode of the mobile terminal, displaying a focus adjustment image, and performing focus adjustment of the projector module according to focus adjustment input provided in the focus adjustment mode.

    Abstract translation: 提供了一种用于焦点调整的方法和移动终端。 移动终端包括用于将图像投影到外部屏幕上的投影仪模块。 移动终端还包括用于检测移动终端的运动的运动检测传感器。 移动终端还包括控制器，用于确定由运动检测传感器检测的运动是否对应于移动终端的焦点调整模式的激活，显示焦点调整图像，以及根据焦点调整输入执行投影仪模块的聚焦调整 在焦点调节模式下提供。

    METHOD AND MOBILE TERMINAL FOR ADJUSTING FOCUS OF A PROJECTED IMAGE
    20.
    发明申请
    METHOD AND MOBILE TERMINAL FOR ADJUSTING FOCUS OF A PROJECTED IMAGE 有权
    用于调整投影图像聚焦的方法和移动终端

    公开(公告)号：US20130050178A1

    公开(公告)日：2013-02-28

    申请号：US13592901

    申请日：2012-08-23

    Applicant: Byeong-Hoon PARK ,  Jung-Kee LEE

    Inventor： Byeong-Hoon PARK ,  Jung-Kee LEE

    IPC: G09G5/00

    CPC classification number: G09G3/002 ,  G09G2320/0693 ,  G09G2354/00

    Abstract: A method and mobile terminal are provided for focus adjustment. The mobile terminal includes a projector module for projecting an image onto an external screen. The mobile terminal also includes a motion detection sensor for detecting motion of the mobile terminal. The mobile terminal further includes a controller for determining whether the motion detected by the motion detection sensor corresponds to activation of a focus adjustment mode of the mobile terminal, displaying a focus adjustment image, and performing focus adjustment of the projector module according to focus adjustment input provided in the focus adjustment mode.

    Abstract translation: 提供了一种用于焦点调整的方法和移动终端。 移动终端包括用于将图像投影到外部屏幕上的投影仪模块。 移动终端还包括用于检测移动终端的运动的运动检测传感器。 移动终端还包括控制器，用于确定由运动检测传感器检测的运动是否对应于移动终端的焦点调整模式的激活，显示焦点调整图像，以及根据焦点调整输入执行投影仪模块的聚焦调整 在焦点调节模式下提供。

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