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    THIN FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    THIN FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    薄膜太阳能电池及其制造方法

    公开(公告)号：US20110048524A1

    公开(公告)日：2011-03-03

    申请号：US12692101

    申请日：2010-01-22

    Applicant: Jung-Gyu NAM ,  Sang-Cheol PARK ,  Jin-Soo MUN ,  Yu-Hee KIM ,  Ji-Beom YOO

    Inventor： Jung-Gyu NAM ,  Sang-Cheol PARK ,  Jin-Soo MUN ,  Yu-Hee KIM ,  Ji-Beom YOO

    IPC: H01L31/00 ,  H01L31/18

    CPC classification number: H01L31/035281 ,  H01L31/0322 ,  H01L31/0725 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

    Abstract: A thin film solar cell, includes: a first electrode; a light absorption layer including a first light absorption layer including a group I element-group III element-group VI element compound, a second light absorption layer including a group I element-group III element-group VI element compound, and a third light absorption layer including a group I element-group III element-group VI element compound; and a second electrode, wherein the first light absorption layer has a band gap, which is less a band gap of the second light absorption layer, the band gap of the second light absorption layer is less than a band gap of the third light absorption layer, and the second light absorption layer has a band gap gradient, which increases in a direction from the first light absorption layer to the third light absorption layer.

    Abstract translation: 一种薄膜太阳能电池，包括：第一电极; 光吸收层，其包括第一元素族III族元素族VI族元素化合物的第一光吸收层，第一族元素族III族元素族VI族元素化合物的第二光吸收层和第三光吸收层 包含I族元素族III族元素族VI族元素化合物的层; 以及第二电极，其中所述第一光吸收层具有小于所述第二光吸收层的带隙的带隙，所述第二光吸收层的带隙小于所述第三光吸收层的带隙 并且第二光吸收层具有在从第一光吸收层到第三光吸收层的方向上增加的带隙梯度。

    METHOD OF MANUFACTURING DISPERSION TYPE INORGANIC ELECTROLUMINESCENCE DEVICE AND DISPERSION TYPE INORGANIC ELECTROLUMINESCENCE DEVICE
    3.
    发明申请
    METHOD OF MANUFACTURING DISPERSION TYPE INORGANIC ELECTROLUMINESCENCE DEVICE AND DISPERSION TYPE INORGANIC ELECTROLUMINESCENCE DEVICE 审中-公开
    分散型无机电致发光器件和分散型无机电致发光器件的制造方法

    公开(公告)号：US20090110908A1

    公开(公告)日：2009-04-30

    申请号：US12114478

    申请日：2008-05-02

    Applicant: Shang Hyeun PARK ,  Ji Beom YOO ,  Mun Ja KIM ,  Min Jong BAE ,  Tae Won JEONG

    Inventor： Shang Hyeun PARK ,  Ji Beom YOO ,  Mun Ja KIM ,  Min Jong BAE ,  Tae Won JEONG

    IPC: H05B33/14 ,  B32B5/16 ,  B05D5/12

    CPC classification number: C09K11/025 ,  C03C17/36 ,  C03C17/3668 ,  C03C2217/42 ,  C09K11/615 ,  H05B33/10 ,  Y10T428/25

    Abstract: A method of manufacturing a dispersion type inorganic electroluminescence device and a dispersion type inorganic electroluminescence device including a light-emitting layer and a dielectric layer, which are integrated, are disclosed. The method is directed to the manufacture of a dispersion type inorganic electroluminescence device, in which phosphor particles are coated with a metal oxide precursor using ultrasonic waves, after which the phosphor particles coated with the metal oxide precursor are disposed between a transparent electrode and an upper electrode, forming a light-emitting layer and a dielectric layer, which are integrated. The dispersion type inorganic electroluminescence device includes a plurality of phosphor particles coated with a metal oxide precursor, disposed between a transparent electrode and an upper electrode, thereby providing a light-emitting layer and a dielectric layer, which are integrated.

    Abstract translation: 公开了一种制造分散型无机电致发光器件的方法和包括发光层和电介质层的分散型无机电致发光器件。 该方法涉及一种分散型无机电致发光器件的制造，其中使用超声波将荧光体颗粒涂覆在金属氧化物前体上，之后将涂覆有金属氧化物前体的荧光体颗粒设置在透明电极和上部 电极，形成发光层和电介质层。 分散型无机电致发光元件包括多个配置在透明电极和上部电极之间的金属氧化物前体的荧光体粒子，由此提供一体化的发光层和电介质层。

    Semiconductor laser device and method for manufacturing the same
    9.
    发明授权
    Semiconductor laser device and method for manufacturing the same 失效
    半导体激光装置及其制造方法

    公开(公告)号：US5504768A

    公开(公告)日：1996-04-02

    申请号：US161422

    申请日：1993-12-06

    Applicant: Chan-Yong Park ,  Ji-Beom Yoo ,  Kyung-Hyun Park ,  Hong-Man Kim ,  Dong-Hoon Jang ,  Jung-Kee Lee

    Inventor： Chan-Yong Park ,  Ji-Beom Yoo ,  Kyung-Hyun Park ,  Hong-Man Kim ,  Dong-Hoon Jang ,  Jung-Kee Lee

    IPC: H01S5/00 ,  H01S5/042 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S3/18 ,  H01L21/31

    CPC classification number: H01S5/22 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2081

    Abstract: A method for manufacturing the semiconductor laser device comprising the steps of sequentially forming an active layer, a photo-waveguide layer, a cladding layer, and an ohmic contact layer on an upper surface of an InP substrate; forming a first patterned dielectric layer on the ohmic contact layer; depositing a patterned photoresist on the ohmic contact layer to define a p- electrode stripe layer; forming the p- electrode stripe layer only on a part of the ohmic contact layer; performing an annealing process; etching back the layers until the photo-waveguide layer is exposed, using the first patterned dielectric layer and the p- electrode stripe layer as an etching mask, to form a ridge; depositing a second dielectric layer on the substrate formed thus; selectively removing the second dielectric layer to form a contact hole on the p- electrode stripe layer; coating a bonding pad metal layer on the second dielectric layer and in the contact hole; and coating an n- electrode metal layer on bottom surface of the substrate. Since ohmic contact resistance is lowered, thermal generation and threshold current of oscillation are decreased. As a result, operating characteristics of the laser device can be largely improved.

    Abstract translation: 一种制造半导体激光器件的方法，包括以下步骤：在InP衬底的上表面上依次形成有源层，光波导层，包层和欧姆接触层; 在所述欧姆接触层上形成第一图案化电介质层; 在欧姆接触层上沉积图案化的光致抗蚀剂以限定p-电极条纹层; 仅在欧姆接触层的一部分上形成p-电极条纹层; 进行退火处理; 使用第一图案化电介质层和p-电极条纹层作为蚀刻掩模，蚀刻层，直到光波导层被曝光，以形成脊; 在由此形成的衬底上沉积第二介电层; 选择性地去除所述第二电介质层以在所述p电极条带层上形成接触孔; 在所述第二电介质层和所述接触孔中涂覆焊垫金属层; 并在衬底的底表面上涂覆n-电极金属层。 由于欧姆接触电阻降低，所以发热和振荡的阈值电流降低。 结果，可以大大提高激光器件的工作特性。

    Avalanche photodiode having a multiplication layer with superlattice
    10.
    发明授权
    Avalanche photodiode having a multiplication layer with superlattice 失效
    雪崩光电二极管具有超晶格的乘法层

    公开(公告)号：US5369292A

    公开(公告)日：1994-11-29

    申请号：US149775

    申请日：1993-11-10

    Applicant: Ji-Beom Yoo ,  Chan-Yong Park ,  Hong-Man Kim

    Inventor： Ji-Beom Yoo ,  Chan-Yong Park ,  Hong-Man Kim

    IPC: H01L31/0352 ,  H01L31/107 ,  H01L31/06

    CPC classification number: B82Y20/00 ,  H01L31/035236 ,  H01L31/1075

    Abstract: An avalanche photodiode in which a strained superlattice structure is used as a multiplication layer, comprising: an n.sup.+ type InP substrate; an n.sup.+ type InP epitaxial layer formed on a main surface of the substrate; an N type In.sub.1-x Al.sub.x As layer formed on the epitaxial layer; an n.sup.+ type In.sub.1-x Al.sub.x As layer formed on the N type In.sub.1-x Al.sub.x As layer, the n.sup.+ type In.sub.1-x Al.sub.x As layer having a relatively high impurity concentration more than the N type In.sub.1-x Al.sub.x As layer; the multiplication layer deposited on the n.sup.+ type In.sub.1-x Al.sub.x As layer, the multiplication layer having an In.sub.0.53 Ga.sub.0.47 As/In.sub.1-x Al.sub.x As superlattice structure; first and second p.sup.+ type In.sub.1-x Al.sub.x As layers laminated sequentially on the multiplication layer; an absorbing layer formed on the second p.sup.+ type In.sub.1-x Al.sub.x As layer, the absorbing layer being made of an In.sub.0.53 Ga.sub.0.47 As; a P type InP layer formed on the absorbing layer to reduce a surface leakage current; an In.sub.0.53 Ga.sub.0.47 As layer formed on the P type InP layer to be provided for an ohmic contact, and metal layers formed on an upper surface of the In.sub.0.53 Ga.sub.0.47 As layer and the other surface of the substrate, respectively.

    Abstract translation: 使用应变超晶格结构作为倍增层的雪崩光电二极管，包括：n +型InP衬底; 在衬底的主表面上形成的n +型InP外延层; 形成在外延层上的N型In 1-x Al x As层; 形成在N型In 1-x Al x As层上的n +型In 1-x Al x As层，n +型In 1-x Al x As层具有比N型In 1-x Al x As层更高的杂质浓度; 所述乘法层沉积在n +型In1-xAlxAs层上，所述乘法层具有In0.53Ga0.47As / In1-xAlxAs超晶格结构; 第一和第二p +型In1-xAlxAs层依次层叠在乘法层上; 形成在所述第二p +型In 1-x Al x As层上的吸收层，所述吸收层由In 0.53 Ga 0.47 As制成; 形成在吸收层上的P型InP层，以减少表面泄漏电流; 形成在用于欧姆接触的P型InP层上形成的In0.53Ga0.47As层，以及分别形成在In0.53Ga0.47As层的上表面和衬底的另一表面上的金属层。

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