公开(公告)号：US20100080258A1

公开(公告)日：2010-04-01

申请号：US12562605

申请日：2009-09-18

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01S5/00 ,  H01L33/00

CPC classification number: H01S5/18391 ,  H01S5/18311 ,  H01S5/2086 ,  H01S5/209 ,  H01S2301/166

Abstract: Provided is a surface emitting laser or the like capable of suppressing horizontal misalignment between the surface relief structure and the current confining structure to make higher the precision of the alignment, to thereby obtain single transverse mode characteristics with stability. The surface emitting laser having a semiconductor layer laminated therein includes: a first etching region formed by etching a part of the upper mirror; and a second etching region formed by performing etching from a bottom portion of the first etching region to a semiconductor layer for forming a current confining structure, in which a depth of the second etching region is smaller than a depth of the first etching region.

Abstract translation: 提供了能够抑制表面浮雕结构和电流限制结构之间的水平偏移的表面发射激光器等，以提高对准的精度，从而稳定地获得单横模特性。 层叠有半导体层的表面发射激光器包括：通过蚀刻上反射镜的一部分而形成的第一蚀刻区域; 以及通过从第一蚀刻区域的底部进行蚀刻而形成的第二蚀刻区域到形成电流限制结构的半导体层，其中第二蚀刻区域的深度小于第一蚀刻区域的深度。

公开(公告)号：US20100029027A1

公开(公告)日：2010-02-04

申请号：US12509635

申请日：2009-07-27

Applicant: Mitsuhiro Ikuta ,  Yasuhisa Inao ,  Takako Yamaguchi

Inventor： Mitsuhiro Ikuta ,  Yasuhisa Inao ,  Takako Yamaguchi

IPC: H01L21/00 ,  H01S5/00

CPC classification number: H01S5/18391 ,  H01S5/18311 ,  H01S5/18347 ,  H01S2301/166 ,  H01S2301/176

Abstract: Provided is a surface emitting laser manufacturing method, etc., which reduces process damage occurring to a surface relief structure, enabling stable provision of a single transverse mode characteristic. Provided is a method including a surface relief structure for controlling a reflectance in a light emitting portion of an upper mirror, the surface relief structure including a stepped structure, includes: forming a resist pattern including a pattern for forming a mesa structure and a pattern for forming a stepped structure, on or above the upper mirror, and performing first-phase etching for etching the surface layer of the upper mirror to determine the horizontal position of the stepped structure; forming a current confining structure after the performing first-phase etching; and performing second-phase etching for further etching the area that the first-phase etching has been performed, to determine the depth position of the stepped structure, after the forming a current confining structure.

Abstract translation: 本发明提供了一种表面发射激光制造方法等，其减少了对表面起伏结构发生的工艺损伤，能够稳定地提供单一横模特性。 提供了一种包括用于控制上反射镜的发光部分中的反射率的表面浮雕结构的方法，所述表面浮雕结构包括阶梯结构，包括：形成包括用于形成台面结构的图案的抗蚀剂图案和用于形成台阶结构的图案 在上反射镜上或上方形成台阶结构，并执行用于蚀刻上镜的表面层的第一相蚀刻以确定阶梯结构的水平位置; 在执行第一相蚀刻之后形成电流限制结构; 并且在形成电流限制结构之后，执行第二相蚀刻以进一步蚀刻已经执行第一相蚀刻的区域，以确定阶梯结构的深度位置。

公开(公告)号：US20100014548A1

公开(公告)日：2010-01-21

申请号：US11916230

申请日：2007-04-05

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01S5/183 ,  H01S5/10

CPC classification number: H01S5/105 ,  B82Y20/00 ,  H01S5/183 ,  H01S5/2027 ,  H01S5/34326

Abstract: The present invention provides a surface emitting laser having a novel structure which eliminates necessity to provide a low refractive index medium at an interface of a photonic crystal layer on the side of a substrate. A multilayer mirror (1300), an active layer (1200), and a refractive index periodic structure layer (1020) whose refractive index changes periodically are laminated in a direction perpendicular to a substrate (1500). The refractive index periodic structure layer is structured so as to separate a light having a wavelength λ perpendicularly incident on the refractive index periodic structure into at least a transmitted light and a diffracted light. The multilayer mirror is structured so as to have a reflectance with regard to the diffracted light higher than a reflectance with regard to the transmitted light. A resonant mode is realized within a waveguide including the refractive index periodic structure layer and the multilayer mirror.

Abstract translation: 本发明提供了具有新颖结构的表面发射激光器，其消除了在基板侧的光子晶体层的界面处提供低折射率介质的必要性。 折射率周期性变化的多层反射镜（1300），有源层（1200）和折射率周期性结构层（1020）在与基板（1500）垂直的方向上层叠。 折射率周期结构层被构造成将具有垂直入射在折射率周期结构上的波长λ的光分离成至少透射光和衍射光。 多层反射镜被构造为具有相对于相对于透射光的反射率高的衍射光的反射率。 在包括折射率周期结构层和多层反射镜的波导内实现谐振模式。

公开(公告)号：US07535946B2

公开(公告)日：2009-05-19

申请号：US11940124

申请日：2007-11-14

Applicant: Yasuhiro Nagatomo ,  Yuichiro Hori ,  Mitsuhiro Ikuta

Inventor： Yasuhiro Nagatomo ,  Yuichiro Hori ,  Mitsuhiro Ikuta

IPC: H01S5/00 ,  H01S3/08

CPC classification number: G02B6/1225 ,  B82Y20/00 ,  H01S5/105 ,  H01S5/12 ,  H01S5/18 ,  H01S5/183 ,  H01S5/34326

Abstract: A structure includes a photonic crystal layer including a first member having a high refractive index in which a plurality of holes are periodically arranged, and a second member having a low refractive index. A third member is disposed on the first member. The third member has a refractive index higher than 1.0 and lower than the refractive index of the first member. The holes of the photonic crystal layer have a depth in the range of 20% to 80% of the thickness of the first member.

Abstract translation: 一种结构包括光子晶体层，其包括具有高折射率的第一部件，其中多个孔周期性地布置，以及具有低折射率的第二部件。 第三构件设置在第一构件上。 第三构件的折射率高于1.0且低于第一构件的折射率。 光子晶体层的孔的深度在第一构件的厚度的20％至80％的范围内。

公开(公告)号：US20080107145A1

公开(公告)日：2008-05-08

申请号：US11933642

申请日：2007-11-01

Applicant: Yuichiro Hori ,  Mitsuhiro Ikuta

Inventor： Yuichiro Hori ,  Mitsuhiro Ikuta

IPC: G02B6/10 ,  H01S3/08

CPC classification number: H01S5/18386 ,  B82Y20/00 ,  G02B6/1225 ,  H01S5/105 ,  H01S5/18311 ,  H01S5/34326 ,  H01S5/3436

Abstract: To provide a structure having a photonic crystal that can display a reflection function using GR even when a refractive index difference between a photonic crystal layer and a cladding layer adjacent thereto is not sufficient and a surface-emitting laser using the structure. The structure includes a photonic crystal layer including a first member of a flat shape and plural pillars arrayed two-dimensionally periodically on the first member. The photonic crystal layer is formed of a first material having a first refractive index. A low refractive index layer formed of a second material having a second refractive index lower than the first refractive index is adjacent to the photonic crystal layer. A relative refractive index difference between the first refractive index and the second refractive index is not less than 0.04 and does not exceed 0.13. The height of the pillars with respect to the thickness of the photonic crystal layer is not less than 0.10t and does not exceed 0.07t.

Abstract translation: 即使在光子晶体层与与其相邻的包层之间的折射率差不足的情况下，也可以提供具有能够使用GR显示反射功能的光子晶体的结构，以及使用该结构的表面发射激光。 该结构包括光子晶体层，其包括平坦形状的第一构件和在第一构件上二维排列的多个柱。 光子晶体层由具有第一折射率的第一材料形成。 由具有低于第一折射率的第二折射率的第二材料形成的低折射率层与光子晶体层相邻。 第一折射率和第二折射率之间的相对折射率差不小于0.04并且不超过0.13。 相对于光子晶体层的厚度，柱的高度不小于0.10t，不超过0.07t。

公开(公告)号：US08653501B2

公开(公告)日：2014-02-18

申请号：US13273165

申请日：2011-10-13

Applicant: Tetsuya Takeuchi ,  Tatsuro Uchida ,  Mitsuhiro Ikuta

Inventor： Tetsuya Takeuchi ,  Tatsuro Uchida ,  Mitsuhiro Ikuta

IPC: H01L33/04

CPC classification number: H01L33/34 ,  H01L33/06 ,  H01L33/16

Abstract: Provided is an emitting device which is capable of improving the luminous efficiency of an emitting layer formed using a group IV semiconductor material and obtaining an emission spectrum having a narrow band, and a manufacturing method therefor. The emitting device comprises: an emitting layer having a potential confinement structure, comprising: a well region comprising a group IV semiconductor material; and a barrier region being adjacent to the well region and comprising a group IV semiconductor material which is different from the group IV semiconductor material in the well region, wherein: a continuous region from the well region over an interface between the well region and the barrier region to a part of the barrier region comprises fine crystals; and a region in the barrier region, which is other than the continuous region comprising the fine crystals, is amorphous or polycrystalline region.

Abstract translation: 提供一种能够提高使用IV族半导体材料形成的发光层的发光效率并获得具有窄带的发射光谱的发光装置及其制造方法。 发光器件包括：具有电位限制结构的发射层，包括：包含IV族半导体材料的阱区; 以及与所述阱区相邻的阻挡区域，并且包括不同于所述阱区域中的IV族半导体材料的IV族半导体材料，其中：所述阱区域和所述势垒之间的界面上的所述阱区域的连续区域 区域到屏障区域的一部分包括细晶体; 并且除了包含微细晶体的连续区域之外的阻挡区域中的区域是无定形或多晶区域。

公开(公告)号：US08625649B2

公开(公告)日：2014-01-07

申请号：US13413910

申请日：2012-03-07

Applicant: Mitsuhiro Ikuta ,  Aihiko Numata

Inventor： Mitsuhiro Ikuta ,  Aihiko Numata

IPC: H01S5/00 ,  H01S3/20

CPC classification number: H01S5/18391 ,  G03G15/0435 ,  G03G2215/0404 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/18369 ,  H01S5/18375 ,  H01S5/18394

Abstract: A surface emitting laser includes a stepped structure having a step between a first region and a second region, the stepped structure provided in an emission area located in an upper portion of the upper mirror. The surface emitting laser includes a light shielding member provided in a third region between the first region and the second region. The light shielding member is not provided in a portion of the first region and a portion of the second region.

Abstract translation: 表面发射激光器包括在第一区域和第二区域之间具有台阶的台阶结构，该台阶结构设置在位于上反射镜上部的发射区域中。 表面发射激光器包括设置在第一区域和第二区域之间的第三区域中的遮光构件。 遮光构件不设置在第一区域的一部分和第二区域的一部分中。

公开(公告)号：US20130177336A1

公开(公告)日：2013-07-11

申请号：US13824710

申请日：2011-10-05

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01S5/183

CPC classification number: H01S5/18 ,  B41J2/455 ,  B41J2/473 ,  H01S3/02 ,  H01S5/183 ,  H01S5/18313 ,  H01S5/1833 ,  H01S5/18361 ,  H01S5/18391 ,  H01S5/3202 ,  H01S5/423 ,  H01S2301/16 ,  H01S2301/166 ,  H01S2301/18

Abstract: The present invention provides a surface emitting laser that provides a sufficient optical output and is suitable as a light source intended for electrophotographic apparatuses, and a surface-emitting-laser array and an image forming apparatus each including the surface emitting laser.The surface emitting laser includes a first stepped structure on a front surface of a front mirror. In the first stepped structure, a difference L between an optical path length in a first area and an optical path length in a second area satisfies the following expression: (¼+N)λ

Abstract translation: 本发明提供一种表面发射激光器，其提供足够的光输出并且适合作为用于电子照相设备的光源，以及包括表面发射激光器的表面发射激光器阵列和图像形成装置。 表面发射激光器包括在前反射镜的前表面上的第一阶梯结构。 在第一阶梯结构中，第一区域中的光路长度与第二区域中的光程长度之间的差L满足以下表达式：（¼+ N）λ<| L | <（¾+ N）λ其中 N是整数。

公开(公告)号：US20120147918A1

公开(公告)日：2012-06-14

申请号：US13311310

申请日：2011-12-05

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01S5/00

CPC classification number: G03G15/04072 ,  H01S5/18313 ,  H01S5/18391 ,  H01S2301/18

Abstract: A surface emitting laser includes a stepped structure including portions having different thicknesses. The optical path length from a plane defined above the stepped structure and extending parallel to a base substrate to an interface between a front mirror and the stepped structure is set to a specific value in each of the portions of the stepped structure.

Abstract translation: 表面发射激光器包括具有不同厚度的部分的阶梯式结构。 从阶梯状结构上方平面的平面延伸到前反射镜与阶梯状结构之间的界面的光路长度被设定为阶梯状结构的各部分中的特定值。

公开(公告)号：US08068529B2

公开(公告)日：2011-11-29

申请号：US12958987

申请日：2010-12-02

Applicant: Mitsuhiro Ikuta ,  Yasuhisa Inao ,  Takako Yamaguchi

Inventor： Mitsuhiro Ikuta ,  Yasuhisa Inao ,  Takako Yamaguchi

IPC: H01S5/00

CPC classification number: H01S5/18391 ,  H01S5/18311 ,  H01S5/18347 ,  H01S2301/166 ,  H01S2301/176

Abstract: Provided is a surface emitting laser manufacturing method, etc., which reduces process damage occurring to a surface relief structure, enabling stable provision of a single transverse mode characteristic. Provided is a method including a surface relief structure for controlling a reflectance in a light emitting portion of an upper mirror, the surface relief structure including a stepped structure, includes: forming a resist pattern including a pattern for forming a mesa structure and a pattern for forming a stepped structure, on or above the upper mirror, and performing first-phase etching for etching the surface layer of the upper mirror to determine the horizontal position of the stepped structure; forming a current confining structure after the performing first-phase etching; and performing second-phase etching for further etching the area that the first-phase etching has been performed, to determine the depth position of the stepped structure, after the forming a current confining structure.

Abstract translation: 本发明提供了一种表面发射激光制造方法等，其减少了对表面起伏结构发生的工艺损伤，能够稳定地提供单一横模特性。 提供了一种包括用于控制上反射镜的发光部分中的反射率的表面浮雕结构的方法，所述表面浮雕结构包括阶梯结构，包括：形成包括用于形成台面结构的图案的抗蚀剂图案和用于形成台阶结构的图案 在上反射镜上或上方形成台阶结构，并执行用于蚀刻上镜的表面层的第一相蚀刻以确定阶梯结构的水平位置; 在执行第一相蚀刻之后形成电流限制结构; 并且在形成电流限制结构之后，执行第二相蚀刻以进一步蚀刻已经执行第一相蚀刻的区域，以确定阶梯结构的深度位置。