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公开(公告)号：US10261223B2
公开(公告)日：2019-04-16
申请号：US15115206
申请日：2015-01-30
Applicant: CANON U.S.A., INC. , THE GENERAL HOSPITAL CORPORATION , Guillermo J Tearney , Dongkyun Kang , Mitsuhiro Ikuta , George M. Whitesides , Ramses V. Martinez
Inventor： Guillermo J Tearney , Dongkyun Kang , Mitsuhiro Ikuta , George M. Whitesides , Ramses V. Martinez
IPC: G02B5/18 , B29D11/00 , G02B23/24 , G02B27/42 , B29K105/00
Abstract: Exemplary method and system for providing a diffractive configuration in an optical arrangement are provided. For example, a material can be provided with at least one patterned surface having a very high aspect ratio. The material can be connected with at least one portion of a waveguide arrangement using a pre-polymer adhesive composition. Further, the pre-polymer adhesive composition can be caused to polymerize so as to form the diffractive configuration which at least approximately replicates a structure or at least one feature of the patterned surface.
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公开(公告)号：US09046807B2
公开(公告)日：2015-06-02
申请号：US13311310
申请日：2011-12-05
Applicant: Mitsuhiro Ikuta
Inventor： Mitsuhiro Ikuta
CPC classification number: G03G15/04072 , H01S5/18313 , H01S5/18391 , H01S2301/18
Abstract: A surface emitting laser includes a stepped structure including portions having different thicknesses. The optical path length from a plane defined above the stepped structure and extending parallel to a base substrate to an interface between a front mirror and the stepped structure is set to a specific value in each of the portions of the stepped structure.
Abstract translation: 表面发射激光器包括具有不同厚度的部分的阶梯式结构。 从阶梯状结构上方平面的平面延伸到前反射镜与阶梯状结构之间的界面的光路长度被设定为阶梯状结构的各部分中的特定值。
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公开(公告)号：US08319807B2
公开(公告)日：2012-11-27
申请号：US12909447
申请日：2010-10-21
Applicant: Mitsuhiro Ikuta
Inventor： Mitsuhiro Ikuta
IPC: G03G13/04
CPC classification number: B41J2/45
Abstract: Provided is an electrophotographic image forming apparatus using a novel array light source to replace the LED array light sources, which enables provision of a reduced image formation spot diameter on a photoreceptor as well as a reduced spot pitch. An electrophotographic image forming apparatus according to the present invention includes an electrophotographic image forming apparatus including a light source, and an electrophotographic photoreceptor to be exposed by the light source, the light source for exposing the electrophotographic photoreceptor including: a plurality of surface plasmon waveguides for forming a potential distribution on the electrophotographic photoreceptor using near-field light generated at tips thereof, the surface plasmon waveguides being arrayed: and an excitation mechanism for exciting a surface plasmon on each of the plurality of surface plasmon waveguides.
Abstract translation: 提供一种电子照相图像形成装置，其使用新颖的阵列光源来代替LED阵列光源，其能够在感光体上提供缩小的图像形成光斑直径以及减小的光点间距。 根据本发明的电子照相图像形成装置包括电子照相图像形成装置，其包括光源和由光源曝光的电子照相感光体，用于曝光电子照相感光体的光源包括：多个表面等离子体波导，用于 使用在其顶端产生的近场光在电子照相感光体上形成电势分布，排列表面等离子体波导;以及激励机构，用于激发多个表面等离子体波导中的每一个上的表面等离子体激元。
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公开(公告)号：US20120237261A1
公开(公告)日：2012-09-20
申请号：US13413910
申请日：2012-03-07
Applicant: Mitsuhiro Ikuta , Aihiko Numata
Inventor： Mitsuhiro Ikuta , Aihiko Numata
CPC classification number: H01S5/18391 , G03G15/0435 , G03G2215/0404 , H01S5/18313 , H01S5/18327 , H01S5/18333 , H01S5/18338 , H01S5/18369 , H01S5/18375 , H01S5/18394
Abstract: A surface emitting laser includes a stepped structure having a step between a first region and a second region, the stepped structure provided in an emission area located in an upper portion of the upper mirror. The surface emitting laser includes a light shielding member provided in a third region between the first region and the second region. The light shielding member is not provided in a portion of the first region and a portion of the second region.
Abstract translation: 表面发射激光器包括在第一区域和第二区域之间具有台阶的台阶结构，该台阶结构设置在位于上反射镜上部的发射区域中。 表面发射激光器包括设置在第一区域和第二区域之间的第三区域中的遮光构件。 遮光构件不设置在第一区域的一部分和第二区域的一部分中。
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公开(公告)号：US20110293331A1
公开(公告)日：2011-12-01
申请号：US13111282
申请日：2011-05-19
Applicant: Yasuhisa Inao , Mitsuhiro Ikuta , Tetsuya Takeuchi
Inventor： Yasuhisa Inao , Mitsuhiro Ikuta , Tetsuya Takeuchi
CPC classification number: H01S5/187 , B82Y20/00 , G03G15/04 , G03G15/04072 , G03G15/326 , H01S5/18311 , H01S5/18358 , H01S5/3022 , H01S5/34326 , H01S5/3436 , H01S5/423
Abstract: This invention provides a surface-emitting laser that can prevent delamination at the interface of a selective oxidation layer and a spacer layer, while suppressing any rise of voltage, to improve the reliability of operation.
Abstract translation: 本发明提供一种表面发射激光器，其能够防止选择性氧化层和间隔层的界面的分层，同时抑制电压的上升，提高操作的可靠性。
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Patent Agency Ranking
公开(公告)号：US07876800B2
公开(公告)日：2011-01-25
申请号：US12105481
申请日：2008-04-18
Applicant: Mitsuhiro Ikuta
Inventor： Mitsuhiro Ikuta
IPC: H01S5/00
CPC classification number: H01S5/18 , H01S5/0425 , H01S5/105
Abstract: A surface emitting laser having a photonic crystal layer 130 on a substrate 105 with an active layer therebetween, in which the photonic crystal layer includes at least a first periodic structure for resonating in an in-plane direction and a second periodic structure for modulating a light intensity distribution in an in-plane direction. The light intensity in the photonic crystal layer is periodically distributed to a region having high light intensity and a region having low light intensity by the second periodic structure. Further, a conductive film 170 for performing current injection into the active layer is selectively provided just above the region having low light intensity. The surface emitting laser provides suppression of light absorption and highly efficient current injection into an active layer to attain a high power.
Abstract translation: 一种表面发射激光器，其具有在衬底105上的光子晶体层130，其间具有有源层，其中光子晶体层至少包括用于在面内方向上谐振的第一周期性结构和用于调制光的第二周期性结构 在平面方向上的强度分布。 光子晶体层中的光强度通过第二周期性结构周期性地分布到具有高光强度的区域和具有低光强度的区域。 此外，用于在有源层进行电流注入的导电膜170选择性地设置在具有低光强度的区域正上方。 表面发射激光器提供抑制光吸收和高效电流注入有源层以获得高功率。
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公开(公告)号：US20100166034A1
公开(公告)日：2010-07-01
申请号：US12377934
申请日：2008-10-08
Applicant: Mitsuhiro Ikuta
Inventor： Mitsuhiro Ikuta
CPC classification number: H01S5/18 , H01S5/105 , H01S5/187 , H01S5/2004 , H01S5/2027
Abstract: When configuring a surface emitting laser by a semiconductor material not capable of largely extracting a refractive-index difference, the surface emitting laser using a photonic crystal capable of forming a waveguide is provided.
Abstract translation: 当通过不能很大程度地提取折射率差的半导体材料配置表面发射激光器时，提供了使用能够形成波导的光子晶体的表面发射激光器。
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公开(公告)号：US20090034572A1
公开(公告)日：2009-02-05
申请号：US12166225
申请日：2008-07-01
Applicant: Mitsuhiro Ikuta
Inventor： Mitsuhiro Ikuta
CPC classification number: B82Y20/00 , H01S5/0655 , H01S5/105 , H01S5/18311 , H01S5/18358 , H01S5/18372 , H01S5/2086 , H01S5/34326
Abstract: Provided is a high-output surface-emitting laser capable of reducing effects on reflectance of an upper reflection mirror in a single transverse mode. The surface-emitting laser includes plural semiconductor layers, laminated on a substrate, which includes a lower semiconductor multilayer reflection mirror, an active layer, and an upper semiconductor multilayer reflection mirror, wherein the lower or upper semiconductor multilayer reflection mirror includes a first semiconductor layer having a two-dimensional photonic crystal structure comprised of a high and low refractive index portions which are arranged in a direction parallel to the substrate, and wherein a second semiconductor layer laminated on the first semiconductor layer includes a microhole which reaches the low refractive index portion, the cross section of the microhole in the direction parallel to the substrate being smaller than the cross section of the low refractive index portion formed in the first semiconductor layer.
Abstract translation: 提供了能够降低在单横模中上反射镜的反射率的效果的高输出表面发射激光器。 表面发射激光器包括层叠在基板上的多个半导体层，其包括下半导体多层反射镜，有源层和上半导体多层反射镜，其中下半导体多层反射镜或上半导体多层反射镜包括第一半导体层 具有由平行于基板的方向配置的高折射率部分和低折射率部分构成的二维光子晶体结构，其中层压在第一半导体层上的第二半导体层包括到达低折射率部分的微孔 微孔在与基板平行的方向上的横截面小于形成在第一半导体层中的低折射率部分的横截面。
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公开(公告)号：US20080112442A1
公开(公告)日：2008-05-15
申请号：US11937772
申请日：2007-11-09
Applicant: Mitsuhiro Ikuta
Inventor： Mitsuhiro Ikuta
CPC classification number: H01S5/18386 , H01S5/18311 , H01S5/18313 , H01S5/18333 , H01S5/18338 , H01S2301/163
Abstract: A surface-emitting laser includes reflectors. One of the reflectors has multiple layers including one or more high-refractive-index layers and one or more low-refractive-index layers which are alternately stacked. At least one of the low-refractive-index layers includes a first region containing aluminum oxide and a second region surrounding the first region. A boundary between the first and second regions is positioned within a region where laser light is emitted. The reflectance of the multilayer reflector is higher in a portion including the first region than in a portion including the second region.
Abstract translation: 表面发射激光器包括反射器。 一个反射器具有多个层，包括一个或多个高折射率层和一个或多个交替层叠的低折射率层。 低折射率层中的至少一个包括含有氧化铝的第一区域和围绕第一区域的第二区域。 第一和第二区域之间的边界位于发射激光的区域内。 在包括第一区域的部分中，多层反射器的反射率比包括第二区域的部分的反射率高。
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公开(公告)号：US08653501B2
公开(公告)日：2014-02-18
申请号：US13273165
申请日：2011-10-13
Applicant: Tetsuya Takeuchi , Tatsuro Uchida , Mitsuhiro Ikuta
Inventor： Tetsuya Takeuchi , Tatsuro Uchida , Mitsuhiro Ikuta
IPC: H01L33/04
Abstract: Provided is an emitting device which is capable of improving the luminous efficiency of an emitting layer formed using a group IV semiconductor material and obtaining an emission spectrum having a narrow band, and a manufacturing method therefor. The emitting device comprises: an emitting layer having a potential confinement structure, comprising: a well region comprising a group IV semiconductor material; and a barrier region being adjacent to the well region and comprising a group IV semiconductor material which is different from the group IV semiconductor material in the well region, wherein: a continuous region from the well region over an interface between the well region and the barrier region to a part of the barrier region comprises fine crystals; and a region in the barrier region, which is other than the continuous region comprising the fine crystals, is amorphous or polycrystalline region.
Abstract translation: 提供一种能够提高使用IV族半导体材料形成的发光层的发光效率并获得具有窄带的发射光谱的发光装置及其制造方法。 发光器件包括：具有电位限制结构的发射层，包括：包含IV族半导体材料的阱区; 以及与所述阱区相邻的阻挡区域，并且包括不同于所述阱区域中的IV族半导体材料的IV族半导体材料，其中：所述阱区域和所述势垒之间的界面上的所述阱区域的连续区域 区域到屏障区域的一部分包括细晶体; 并且除了包含微细晶体的连续区域之外的阻挡区域中的区域是无定形或多晶区域。
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