公开(公告)号：US06921678B2

公开(公告)日：2005-07-26

申请号：US10434063

申请日：2003-05-09

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01S5/30 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/223

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

摘要翻译： 本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。 步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

公开(公告)号：US06858877B2

公开(公告)日：2005-02-22

申请号：US10352256

申请日：2003-01-28

申请人： Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Ayumu Tsujimura ,  Nobuyuki Otsuka

发明人： Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Ayumu Tsujimura ,  Nobuyuki Otsuka

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/34333

摘要： A facet-forming layer made of nitride semiconductor containing at least aluminum is formed on a substrate made of gallium nitride (GaN). A facet surface inclined with respect to a C-surface is formed on the surface of the facet-forming layer, and a selective growth layer laterally grows from the inclined facet surface. As a result, the selective growth layer can substantially lattice-match an n-type cladding layer made of n-type AlGaN and grown on the selective growth layer. For example, a laser structure without cracks being generated can be obtained by crystal growth.

摘要翻译： 在由氮化镓（GaN）制成的基板上形成由至少含有铝的氮化物半导体构成的面形成层。 在小面形成层的表面上形成有相对于C面倾斜的面面，并且从倾斜面面侧向生长选择性生长层。 结果，选择生长层可以使由n型AlGaN制成的n型包覆层基本上晶格匹配并在选择性生长层上生长。 例如，可以通过晶体生长获得没有产生裂纹的激光结构。

公开(公告)号：US4578048A

公开(公告)日：1986-03-25

申请号：US236914

申请日：1981-07-06

申请人： Seiichi Hirai ,  Akira Nishizawa ,  Nobuyuki Otsuka

发明人： Seiichi Hirai ,  Akira Nishizawa ,  Nobuyuki Otsuka

IPC分类号： G01N27/00 ,  F16D3/20 ,  F16D3/205 ,  G01N1/22 ,  G01N25/64 ,  G01N27/12 ,  G01N33/00

CPC分类号： F16D3/2055 ,  F16D2003/2026 ,  Y10S464/905

摘要： A constant velocity universal joint of the type having rollers carried by radial trunnions of an inner rotary member and which are received in axial grooves in an outer rotary member, including abutment members which engage abutment surfaces of the grooves and which prevent locking engagement of the rollers with both of the opposed walls of the axial grooves.

摘要翻译： 一种等速万向接头，其具有由内部旋转构件的径向轴颈承载并且被容纳在外部旋转构件中的轴向槽中的辊，其包括抵接构件，其抵接凹槽的邻接表面并且防止辊的锁定接合 与轴向凹槽的两个相对的壁。

公开(公告)号：US4331005A

公开(公告)日：1982-05-25

申请号：US116390

申请日：1980-01-29

申请人： Seiichi Hirai ,  Nobuyuki Otsuka

发明人： Seiichi Hirai ,  Nobuyuki Otsuka

IPC分类号： F16D3/20 ,  F16D3/2245 ,  F16D3/30

CPC分类号： F16D3/2245 ,  Y10S464/906

摘要： A constant velocity universal joint in which an outer member and an inner member are coupled through a cage member which has an outer spherical surface and an inner spherical surface. These spherical surfaces of the cage member are in contact with an inner spherical surface of the outer member and an outer spherical surface of the inner member, respectively. The cage member supports a number of balls in respective windows, and these balls are in engagement with respective pairs of longitudinally extending ball grooves formed in the inner spherical surface of the outer member and the outer spherical surface of the inner member. The bottom surfaces of the ball grooves extend substantially along respective circular arcs whose centers are located at equal distances on opposite sides of the center of the joint. The inner and outer spherical surfaces of the cage member are eccentric to one another and their centers are also located at equal distances on opposite sides of the center of the joint. The offset centers of the circular arcs and the offset centers of the spherical surfaces of the cage member are respectively coincident.

摘要翻译： 一种等速万向接头，其中外部构件和内部构件通过具有外球面和内球面的保持架构件联接。 保持架构件的这些球面分别与外部构件的内球面和内构件的外球面接触。 笼构件在各窗口中支撑多个球，并且这些球与形成在外构件的内球面和内构件的外球面的各对纵向延伸的球槽相配合。 球槽的底面基本上沿相应的圆弧延伸，圆弧的中心位于接头中心的相对侧上相等的距离处。 保持架构件的内外球面彼此偏心，并且其中心也位于接头中心相对两侧相等的距离处。 圆弧的偏移中心和保持架构件的球面的偏移中心分别一致。

公开(公告)号：US4180344A

公开(公告)日：1979-12-25

申请号：US951607

申请日：1978-10-13

申请人： Nobuyuki Otsuka ,  Seiichi Hirai ,  Motoshige Sogabe

发明人： Nobuyuki Otsuka ,  Seiichi Hirai ,  Motoshige Sogabe

IPC分类号： F16D3/227 ,  F16D3/00

CPC分类号： F16D3/227 ,  F16D2003/22303 ,  Y10S464/906 ,  Y10T403/32041

摘要： A joint of the type with an outer member having an inner cylindrical surface provided with an inner member having an outer diameter spherical surface and a cage member mounted on the inner member having an inner spherical surface and an outer diameter spherical surface which are eccentric with respect to each other. The cage member is provided with plural balls mounted in its respective windows, and the respective balls are in engagement with corresponding respective pairs of longitudinal directional guide grooves made in mutually facing surfaces of the outer member and the inner member. There is also provided an annular guide member mounted at its inner spherical surface and its outer cylindrical surface so as to be interposed between the cage member and the outer member.

摘要翻译： 该类型的外部构件的外部构件具有设置有具有外径球面的内部构件的外部构件和安装在具有内球面和外径球面的内部构件的保持构件的外部构件，所述内侧球面和外径球面相对于 对彼此。 笼构件设置有安装在其各自窗口中的多个球，并且各个球与在外部构件和内部构件的相互面对的表面中形成的相应的相应的一对纵向导向槽接合。 还设置有环形引导构件，其安装在其内球面和其外圆柱形表面上，以便插入在保持构件和外构件之间。

公开(公告)号：US20120019182A1

公开(公告)日：2012-01-26

申请号：US13247197

申请日：2011-09-28

申请人： Nobuyuki OTSUKA ,  Yuji Kudoh ,  Daisuke Ueda ,  Hitoshi Taya

发明人： Nobuyuki OTSUKA ,  Yuji Kudoh ,  Daisuke Ueda ,  Hitoshi Taya

IPC分类号： H02P6/10 ,  H02K21/12

CPC分类号： H02K7/00 ,  H02K29/03 ,  H02K29/06 ,  H02K99/20 ,  H02P27/08

摘要： To develop a motor which can directly drive a brushless motor using a conventional circuit for an inverter without smoothing circuit and a circuit for a matrix converter that are for a brushed motor that operates on single-phase 100 V. Magnetic cores are attached to a motor shaft to increase inertial force. A magnetic-drive-pulsation motor which modulates torque is realized using force of attraction and repulsion generated by outer magnets and magnetic cores. The magnetic-drive-pulsation motor can be driven using the inverter and the matrix converter on single-phase 100 V power supply.

摘要翻译： 开发可以直接驱动无刷电动机的电动机，其使用用于无平滑电路的逆变器的常规电路和用于矩阵转换器的电路，其用于在单相100V上操作的有刷电动机。磁芯附接到电动机 轴增加惯性力。 使用由外磁体和磁芯产生的吸引力和排斥力来实现调节扭矩的磁驱动脉动电动机。 可以使用变频器和矩阵转换器在单相100 V电源上驱动磁驱动脉动电机。

公开(公告)号：US07414261B2

公开(公告)日：2008-08-19

申请号：US10542063

申请日：2004-04-14

申请人： Nobuyuki Otsuka ,  Koichi Mizuno ,  Shigeo Yoshii ,  Asamira Suzuki

发明人： Nobuyuki Otsuka ,  Koichi Mizuno ,  Shigeo Yoshii ,  Asamira Suzuki

IPC分类号： H01L29/06

CPC分类号： H01L29/7371 ,  H01L29/2003 ,  H01L29/7376

摘要： A ballistic semiconductor device of the present invention comprises a n-type emitter layer (102), a base layer (305) made of n-type InGaN, a n-type collector layer (307), an emitter barrier layer (103) interposed between the emitter layer (102) and the base layer (305) and having a band gap larger than that of the base layer (305), and a collector barrier layer (306) interposed between the base layer (305) and the collector layer (307) and having a band gap larger than that of the base layer (305), and operates at 10 GHz or higher.

摘要翻译： 本发明的弹道半导体器件包括n型发射极层（102），由n型InGaN制成的基极层（305），n型集电极层（307），发射极阻挡层（103） 在发射极层（102）和基极层（305）之间具有比基底层（305）的带隙大的带隙的集电极阻挡层（306），并且位于基极层（305）和集电极层 （307），并且具有比基底层（305）的带隙大的带隙，并且在10GHz或更高频率下工作。

公开(公告)号：US07009216B2

公开(公告)日：2006-03-07

申请号：US10718581

申请日：2003-11-24

申请人： Nobuyuki Otsuka ,  Shigeo Yoshii ,  Toshiya Yokogawa

发明人： Nobuyuki Otsuka ,  Shigeo Yoshii ,  Toshiya Yokogawa

IPC分类号： H01L33/00 ,  H01S3/19

CPC分类号： H01S5/187 ,  H01S5/028 ,  H01S5/105 ,  H01S5/124 ,  H01S5/2201 ,  H01S5/42

摘要： A semiconductor light emitting device of the present invention comprises a n-type InP substrate (1), and a stripe structure (10) formed in the stripe shape on the n-type InP substrate (1) and comprised of a n-type InP lower cladding layer (3), an active layer (4) having a resonator in a direction parallel to the n-type InP substrate (1), and a p-type InP upper cladding layer (5). The stripe structure (10) has a photonic crystal structure (2) with concave portions 9 arranged in rectangular lattice shape, and the direction in which the concave portions (9) of the photonic crystal structure (2) are arranged corresponds with a resonator direction. A stripe-shaped upper electrode (6) is formed on the stripe structure (10) to extend in the resonator direction. The semiconductor light emitting device of the present invention so structured is configured to radiate light in the direction perpendicular to the n-type InP substrate (1).

摘要翻译： 本发明的半导体发光器件包括n型InP衬底（1）和在n型InP衬底（1）上形成为条形的条形结构（10），并且由n型InP衬底 下包层（3），在与n型InP衬底（1）平行的方向上具有谐振器的有源层（4）和p型InP上覆层（5）。 条状结构（10）具有光子晶体结构（2），其具有矩形格子状的凹部9，并且配置有光子晶体结构（2）的凹部（9）的方向与谐振器方向 。 条状上电极（6）形成在条状结构（10）上以沿谐振器方向延伸。 如此构造的本发明的半导体发光器件被配置为沿垂直于n型InP衬底（1）的方向辐射光。

公开(公告)号：US06953954B2

公开(公告)日：2005-10-11

申请号：US10745567

申请日：2003-12-29

申请人： Shigeo Yoshii ,  Nobuyuki Otsuka ,  Koichi Mizuno ,  Asamira Suzuki ,  Toshiya Yokogawa

发明人： Shigeo Yoshii ,  Nobuyuki Otsuka ,  Koichi Mizuno ,  Asamira Suzuki ,  Toshiya Yokogawa

IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/20 ,  H01L29/778 ,  H01L29/80 ,  H01L29/43

CPC分类号： H01L29/1029 ,  H01L29/2003 ,  H01L29/7785

摘要： A plasma oscillation switching device of the present invention comprises semiconductor substrate 101; first barrier layer 103 that is composed of a III-V compound semiconductor and formed on the substrate; channel layer 104 that is composed of a III-V compound semiconductor and formed on the first barrier layer; second barrier layer 105 that is composed of a III-V compound semiconductor and formed on the channel layer; source electrode 107, gate electrode 109 and drain electrode 108 provided on the second barrier layer, wherein the first barrier layer includes n-type diffusion layer 103a, the second barrier layer includes p-type diffusion layer 105a, the band gap of the channel layer is smaller than the band gaps of the first and the second barrier layers, two-dimensional electron gas EG is accumulated at the conduction band at the boundary between the first barrier layer and the channel layer, two-dimensional hole gas HG is accumulated at the valence band at the boundary between the second barrier layer and the channel layer, and these electrodes are formed on the barrier layer through the insulating layer 106.

摘要翻译： 本发明的等离子体振荡切换装置包括半导体基板101， 第一阻挡层103，其由III-V族化合物半导体构成并形成在基板上; 沟道层104，其由III-V族化合物半导体形成并形成在第一阻挡层上; 第二阻挡层105，其由III-V族化合物半导体形成并形成在沟道层上; 源极电极107，栅电极109和漏电极108，其中第一阻挡层包括n型扩散层103a，第二阻挡层包括p型扩散层105a，第二势垒层包括p型扩散层105a， 通道层比第一和第二阻挡层的带隙小，二维电子气体EG在第一阻挡层和沟道层之间的边界处的导带处累积，二维空穴气体HG被积聚 在第二阻挡层和沟道层之间的边界处的价带处，并且这些电极通过绝缘层106形成在阻挡层上。

公开(公告)号：US20050142682A1

公开(公告)日：2005-06-30

申请号：US11063533

申请日：2005-02-24

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01S5/30 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/00 ,  H01L21/336

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.