公开(公告)号：US20050142682A1

公开(公告)日：2005-06-30

申请号：US11063533

申请日：2005-02-24

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01S5/30 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/00 ,  H01L21/336

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

公开(公告)号：US07160748B2

公开(公告)日：2007-01-09

申请号：US11063533

申请日：2005-02-24

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

摘要翻译： 本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。 步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

公开(公告)号：US06921678B2

公开(公告)日：2005-07-26

申请号：US10434063

申请日：2003-05-09

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01S5/30 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/223

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

摘要翻译： 本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。 步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

公开(公告)号：US06586774B2

公开(公告)日：2003-07-01

申请号：US10021006

申请日：2001-12-19

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01L2906

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

公开(公告)号：US06911351B2

公开(公告)日：2005-06-28

申请号：US10345377

申请日：2003-01-16

申请人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

发明人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/12 ,  H01L33/40 ,  H01L33/46 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40 ,  H01L21/00

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/405 ,  H01L33/46 ,  H01S5/2077 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/4031 ,  H01S2304/00

摘要： The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of AluGavInwN, wherein 0≦u, v, w≦1 and u+v+w=1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of AlxGayInzN, wherein 0≦x, y, z≦1 and x+y+z=1, by using, as a seed crystal, C planes corresponding to top faces of the convexes exposed from the mask film.

摘要翻译： 本发明的氮化物半导体的制造方法包括以下步骤：在衬底上形成AlGaN的第一氮化物半导体层， / SUB，其中0≤u，v，w <= 1，u + v + w =​​ 1; 在所述第一氮化物半导体层的上部形成沿着基板表面方向间隔地延伸的多个凸部; 形成用于覆盖形成在彼此相邻的凸起之间的凹部的底部的掩模膜; 并且在所述第一氮化物半导体层上生长Al 2 O 3的第二氮化物半导体层，其中0 <= x ，y，z <= 1和x + y + z = 1，通过使用对应于从掩模膜暴露的凸起的顶面的C面作为晶种。

公开(公告)号：US06720586B1

公开(公告)日：2004-04-13

申请号：US09712127

申请日：2000-11-15

申请人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

发明人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

IPC分类号： H01L3300

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/405 ,  H01L33/46 ,  H01S5/2077 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/4031 ,  H01S2304/00

摘要： The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of AluGavInwN, wherein 0≦u, v, w ≦1 and u+v+w=1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of AlxGayInzN, wherein 0≦x, y, z≦1 and x+y+z=1, by using, as a seed crystal, Cplanes corresponding to top faces of the convexes exposed from the mask film.

摘要翻译： 制造本发明的氮化物半导体的方法包括以下步骤：在衬底上形成AluGavInwN的第一氮化物半导体层，其中0≤u，v，w <= 1，u + v + w =​​ 1; 在所述第一氮化物半导体层的上部形成沿着基板表面方向间隔地延伸的多个凸部; 形成用于覆盖形成在彼此相邻的凸起之间的凹部的底部的掩模膜; 并且在第一氮化物半导体层上生长Al x Ga y In z N的第二氮化物半导体层，其中0≤x，y，z <= 1和x + y + z = 1，通过使用对应于 从掩模膜暴露的凸起的顶面。

公开(公告)号：US06977186B2

公开(公告)日：2005-12-20

申请号：US10740765

申请日：2003-12-22

申请人： Yoshiaki Hasegawa ,  Gaku Sugahara ,  Ryoko Miyanaga

发明人： Yoshiaki Hasegawa ,  Gaku Sugahara ,  Ryoko Miyanaga

IPC分类号： H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/306 ,  H01L21/308 ,  H01L21/461 ,  H01L33/00

CPC分类号： H01L21/30612 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/3083 ,  H01L33/007

摘要： A method for manufacturing a semiconductor includes: a first step of forming an etching stop layer on a first semiconductor layer; and a second step of forming a second semiconductor layer made of a group III–V compound semiconductor on the etching stop layer. An etching rate for the etching stop layer by dry etching is less than an etching rate for the second semiconductor layer.

摘要翻译： 一种制造半导体的方法包括：在第一半导体层上形成蚀刻停止层的第一步骤; 以及在蚀刻停止层上形成由III-V族化合物半导体制成的第二半导体层的第二步骤。 通过干蚀刻蚀刻停止层的蚀刻速率小于第二半导体层的蚀刻速率。

公开(公告)号：US06709881B2

公开(公告)日：2004-03-23

申请号：US09993771

申请日：2001-11-27

申请人： Yoshiaki Hasegawa ,  Gaku Sugahara ,  Ryoko Miyanaga

发明人： Yoshiaki Hasegawa ,  Gaku Sugahara ,  Ryoko Miyanaga

IPC分类号： H01L2100

CPC分类号： H01L21/30612 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/3083 ,  H01L33/007

摘要： A method for manufacturing a semiconductor includes: a first step of forming an etching stop layer on a first semiconductor layer; and a second step of forming a second semiconductor layer made of a group III-V compound semiconductor on the etching stop layer. An etching rate for the etching stop layer by dry etching is less than an etching rate for the second semiconductor layer.

摘要翻译： 一种制造半导体的方法包括：在第一半导体层上形成蚀刻停止层的第一步骤; 以及在蚀刻停止层上形成由III-V族化合物半导体制成的第二半导体层的第二步骤。 通过干蚀刻蚀刻停止层的蚀刻速率小于第二半导体层的蚀刻速率。

公开(公告)号：US20050156190A1

公开(公告)日：2005-07-21

申请号：US11081664

申请日：2005-03-17

申请人： Yoshiaki Hasegawa ,  Toshitaka Shimamoto ,  Gaku Sugahara

发明人： Yoshiaki Hasegawa ,  Toshitaka Shimamoto ,  Gaku Sugahara

IPC分类号： H01L27/15 ,  H01L29/22 ,  H01L29/26 ,  H01L33/00 ,  H01S5/02 ,  H01S5/10 ,  H01S5/16 ,  H01S5/22 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/1039 ,  H01S5/164 ,  H01S5/22 ,  H01S5/3203 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/12

摘要： A method for fabricating a semiconductor light emitting device, the method comprising the steps of: repeatedly forming, on a first nitride based Group III-V compound semiconductor layer, stripe-shaped masking films in a predetermined cycle in a width-wise direction thereof, each masking film comprising first width sections having a predetermined width and second width sections which are adjacent to both ends of each first width section and have a greater width than the predetermined width; selectively growing a second nitride based Group III-V compound semiconductor layer from exposed parts of a surface of the first nitride based Group III-V compound semiconductor so as to cover the masking films and the exposed parts, each of the exposed parts being located between the masking films; and layering a semiconductor laser structure on the second nitride based Group III-V compound semiconductor layer, the semiconductor laser structure including an active layer which substantially extends in a length-wise direction of the masking films and level difference portions which extend in the width-wise direction by a structure in which a portion located above the second width sections is lower than a portion located above the first width sections.

摘要翻译： 一种制造半导体发光器件的方法，所述方法包括以下步骤：在第一氮化物基III-V族化合物半导体层上，沿其宽度方向以预定的周期重复形成条状掩模膜， 每个掩模膜包括具有预定宽度的第一宽度部分和与每个第一宽度部分的两端相邻并且具有比预定宽度更大的宽度的第二宽度部分; 从第一氮化物基III-V族化合物半导体的表面的暴露部分选择性地生长第二氮化物基III-V族化合物半导体层，以覆盖掩模膜和暴露部分，每个暴露部分位于 掩模膜; 并且在所述第二氮化物基III-V族化合物半导体层上分层半导体激光器结构，所述半导体激光器结构包括基本沿着所述掩模膜的长度方向延伸的有源层和在所述宽度方向上延伸的电平差部分， 通过其中位于第二宽度部分上方的部分低于位于第一宽度部分之上的部分的结构的方向。

公开(公告)号：US06884648B2

公开(公告)日：2005-04-26

申请号：US10687647

申请日：2003-10-20

申请人： Yoshiaki Hasegawa ,  Toshitaka Shimamoto ,  Gaku Sugahara

发明人： Yoshiaki Hasegawa ,  Toshitaka Shimamoto ,  Gaku Sugahara

IPC分类号： H01L27/15 ,  H01L29/22 ,  H01L29/26 ,  H01L33/00 ,  H01S5/02 ,  H01S5/10 ,  H01S5/16 ,  H01S5/22 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/1039 ,  H01S5/164 ,  H01S5/22 ,  H01S5/3203 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/12

摘要： A method for fabricating a semiconductor light emitting device, the method comprising the steps of: repeatedly forming, on a first nitride based Group III-V compound semiconductor layer, stripe-shaped masking films in a predetermined cycle in a width-wise direction thereof, each masking film comprising first width sections having a predetermined width and second width sections which are adjacent to both ends of each first width section and have a greater width than the predetermined width; selectively growing a second nitride based Group III-V compound semiconductor layer from exposed parts of a surface of the first nitride based Group III-V compound semiconductor so as to cover the masking films and the exposed parts, each of the exposed parts being located between the masking films; and layering a semiconductor laser structure on the second nitride based Group III-V compound semiconductor layer, the semiconductor laser structure including an active layer which substantially extends in a length-wise direction of the masking films and level difference portions which extend in the width-wise direction by a structure in which a portion located above the second width sections is lower than a portion located above the first width sections.