公开(公告)号：US6055087A

公开(公告)日：2000-04-25

申请号：US118958

申请日：1998-07-17

Applicant: O Kyun Kwon ,  Kyu Seok Lee ,  Hye Yong Chu

Inventor： O Kyun Kwon ,  Kyu Seok Lee ,  Hye Yong Chu

IPC: H01L51/00 ,  G02F1/015 ,  G02F3/02 ,  H01L31/10 ,  H01S3/10

CPC classification number: G02F3/028 ,  G02F1/015

Abstract: A photo-induced electro-optic oscillator using a multiple quantum well structure PIN diode using a negative resistance characteristic of a photocurrent-voltage is disclosed. The present invention can generate the modulated optical signal as well as the electrical AC signal of a high output by using the multiple quantum well structure having the electro-absorption as the intrinsic layer of the PIN diode, regulate the electrical AC signal frequency and signal amplitude by means of regulating the PIN diode and electrical elements, regulate the modulated optical signal frequency and the modulated signal difference and extinction ratio by means of regulating the multiple quantum well structure, as a result, to generate the electrical and optical signal of a high output, high frequency.

Abstract translation: 公开了一种使用具有光电流电压的负电阻特性的多量子阱结构PIN二极管的光感应电光振荡器。 本发明可以通过使用具有电吸收的多量子阱结构作为PIN二极管的本征层来产生高输出的调制光信号以及高交流信号，调节电AC信号频率和信号幅度 通过调节PIN二极管和电气元件，通过调节多重量子阱结构来调节调制光信号频率和调制信号差和消光比，从而产生高输出的电光信号 ， 高频。

公开(公告)号：US08804232B2

公开(公告)日：2014-08-12

申请号：US13307067

申请日：2011-11-30

Applicant: Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

Inventor： Dong Churl Kim ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

IPC: H01S5/10

CPC classification number: H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

Abstract: A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

Abstract translation: 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

公开(公告)号：US20130163916A1

公开(公告)日：2013-06-27

申请号：US13487807

申请日：2012-06-04

Applicant: Hyun Soo KIM ,  Jong Sool Jeong ,  Mi-Ran Park ,  Byungseok Choi ,  O-Kyun Kwon

Inventor： Hyun Soo KIM ,  Jong Sool Jeong ,  Mi-Ran Park ,  Byungseok Choi ,  O-Kyun Kwon

IPC: G02B6/12 ,  H01L21/02

CPC classification number: G02B6/43 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/4224 ,  G02B6/4232

Abstract: Disclosed are an optical waveguide platform with integrated active transmission device and monitoring photodiode. The optical waveguide platform with hybrid integrated optical transmission device and optical active device includes an optical waveguide region formed by stacking a lower cladding layer, a core layer and an upper cladding layer on a substrate; a trench region formed by etching a portion of the optical waveguide region; and a spot expanding region formed on the core layer in the optical waveguide region, in which the optical transmission device is mounted in the trench region and the optical active device is flip-chip bonded to the spot expanding region. The monitoring photodiode is flip-chip bonded to the spot expanding region of the core layer of the optical waveguide, thereby monitoring output light including an optical coupling loss that occurs during flip-chip bonding.

Abstract translation: 公开了一种具有集成主动传输装置和监测光电二极管的光波导平台。 具有混合集成光传输装置和光学有源装置的光波导平台包括通过在基板上层叠下包层，芯层和上包层而形成的光波导区域; 通过蚀刻光波导区域的一部分形成的沟槽区域; 以及形成在光波导区域的芯层上的点扩展区域，其中光传输装置安装在沟槽区域中，并且光学有源器件被倒装芯片接合到点扩展区域。 监视光电二极管被倒装芯片接合到光波导的芯层的点扩展区域，从而监视包括在倒装芯片接合期间发生的光耦合损耗的输出光。

公开(公告)号：US20110150016A1

公开(公告)日：2011-06-23

申请号：US12973481

申请日：2010-12-20

Applicant: Mi-Ran PARK ,  O-Kyun KWON ,  byung-seok CHOI ,  Dae Kon OH

Inventor： Mi-Ran PARK ,  O-Kyun KWON ,  byung-seok CHOI ,  Dae Kon OH

IPC: H01S3/10

CPC classification number: H01S5/423 ,  H01S5/0085 ,  H01S5/02415 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/4012 ,  H01S5/4087 ,  H01S5/50

Abstract: Provided is a tunable laser module emitting an optical signal having high speed, high power and wideband wavelength tuning. The tunable laser module includes a laser array configured to emit an optical signal having a plurality of different lasing wavelengths, a temperature controller configured to change a temperature of the laser array, and an optical integration device configured to modulate or amplify the optical signal at a side of the laser array opposing the temperature controller.

Abstract translation: 提供了一种发射具有高速度，高功率和宽带波长调谐的光信号的可调谐激光模块。 可调谐激光器模块包括配置成发射具有多个不同的激光波长的光信号的激光器阵列，配置成改变激光器阵列的温度的温度控制器，以及配置成在一个或多个激光器阵列处调制或放大光信号的光学积分装置 激光器阵列的一侧与温度控制器相对。

公开(公告)号：US07927988B2

公开(公告)日：2011-04-19

申请号：US12488577

申请日：2009-06-21

Applicant: In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

Inventor： In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

IPC: H01L21/425

CPC classification number: H01L21/2007 ,  H01L21/76251

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括在第一层和第二层之间形成第一层，第二层，离子注入层和第二层上的抗氧化层，并进行热处理工艺以在第一层和第二层之间形成绝缘层 同时防止使用抗氧化层损失第二层。

公开(公告)号：US07776752B2

公开(公告)日：2010-08-17

申请号：US11635223

申请日：2006-12-07

Applicant: O Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Hyun Woo Song

Inventor： O Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Hyun Woo Song

IPC: H01L21/302

CPC classification number: H01L21/30621 ,  H01S5/183 ,  H01S5/2081

Abstract: Provided are an etching method for a multi-layered structure of semiconductors in groups III-V and a method of manufacturing a VCSEL using the etching method. According to the etching method, a stacked structure including a first semiconductor layer and a second semiconductor layer is exposed to a plasma of a mixture consisting of Cl2, Ar, CH4, and H2 to etch the stacked structure, so that a mirror layer of the VCSEL is formed. The first semiconductor layer is formed of a semiconductor in groups III-V and the second semiconductor layer is formed of a semiconductor in groups III-V, other than the semiconductor of the first semiconductor layer. At least part of a lower mirror layer, a lower electrode layer, an optical gain layer, an upper electrode layer, and an upper mirror layer is etched using one time of an etching process, so that a clean and smooth etched surface is obtained.

Abstract translation: 提供了III-V族半导体的多层结构的蚀刻方法和使用该蚀刻方法制造VCSEL的方法。 根据蚀刻方法，将包括第一半导体层和第二半导体层的堆叠结构暴露于由Cl 2，Ar，CH 4和H 2组成的混合物的等离子体中，以蚀刻层叠结构，使得 形成VCSEL。 第一半导体层由III-V族的半导体形成，第二半导体层由除了第一半导体层的半导体之外的III-V族的半导体形成。 使用一次蚀刻工艺蚀刻下镜面层，下电极层，光增益层，上电极层和上镜层的至少一部分，从而获得清洁且光滑的蚀刻表面。

公开(公告)号：US20100092175A1

公开(公告)日：2010-04-15

申请号：US12367431

申请日：2009-02-06

Applicant: Hyun Soo KIM ,  O-Kyun Kwon ,  Dong Churl Kim ,  Byung-Seok Choi ,  Kisoo Kim ,  Dae Kon Oh

Inventor： Hyun Soo KIM ,  O-Kyun Kwon ,  Dong Churl Kim ,  Byung-Seok Choi ,  Kisoo Kim ,  Dae Kon Oh

IPC: H04J14/02 ,  H01S3/16

CPC classification number: H01S5/50 ,  H01S5/026 ,  H01S5/0608 ,  H01S5/06258 ,  H01S5/1014 ,  H01S5/509

Abstract: Provided are a semiconductor optical amplifier and an optical signal processing method using the same. The reflective semiconductor optical amplifier includes: an optical signal amplification region operating to allow a downward optical signal incident from the external to obtain a gain; and an optical signal modulation region connected to the optical signal amplification region and generating a modulated optical signal. The downward optical signal is amplified through a cross gain modulation using the modulated optical signal and is outputted as an upward optical signal.

Abstract translation: 提供了一种半导体光放大器和使用其的光信号处理方法。 反射半导体光放大器包括：光信号放大区域，其操作以允许从外部入射的向下的光信号获得增益; 以及连接到光信号放大区域并产生调制光信号的光信号调制区域。 向下的光信号通过使用调制光信号的交叉增益调制进行放大，并作为向上的光信号输出。

公开(公告)号：US20090154868A1

公开(公告)日：2009-06-18

申请号：US12117707

申请日：2008-05-08

Applicant: Mi-Ran PARK ,  O-Kyun Kwon ,  Jeong-Woo Park ,  Gyung-Ock Kim

Inventor： Mi-Ran PARK ,  O-Kyun Kwon ,  Jeong-Woo Park ,  Gyung-Ock Kim

IPC: G02F1/295

CPC classification number: G02F1/01708 ,  B82Y20/00 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2201/302 ,  G02F2201/34 ,  G02F2203/02

Abstract: Provided are semiconductor opto-electronic integrated circuits and methods of forming the same. The semiconductor opto-electronic integrated circuit includes: an optical waveguide disposed on a substrate and including an input terminal and an output terminal; an optical grating formed on the optical waveguide; and an optical active device disposed on the optical grating and receiving an optical signal from the optical waveguide through the optical grating to modulate the optical signal.

Abstract translation: 提供半导体光电集成电路及其形成方法。 半导体光电集成电路包括：设置在基板上并包括输入端子和输出端子的光波导; 形成在光波导上的光栅; 以及设置在光栅上的光学有源器件，并通过光栅从光波导接收光信号，以调制光信号。

公开(公告)号：US20090148115A1

公开(公告)日：2009-06-11

申请号：US12111884

申请日：2008-04-29

Applicant: Jong-Moo LEE ,  Duk-Jun KIM ,  O-Kyun KWON ,  Gyung-Ock KIM

Inventor： Jong-Moo LEE ,  Duk-Jun KIM ,  O-Kyun KWON ,  Gyung-Ock KIM

IPC: G02B6/10

CPC classification number: G02B6/12007

Abstract: A waveguide structure is provided. The waveguide structure includes: a slot channel waveguide including first and second patterns, which are spaced apart from each other to define a slot; a first upper layer covering at least a portion of the slot channel waveguide; and a second upper layer covering the remaining portion of the slot channel waveguide. A thermo-optic coefficient (TOC) of the channel waveguide times a TOC of the second upper layer is a negative number.

Abstract translation: 提供了一种波导结构。 波导结构包括：缝隙通道波导，包括第一和第二图案，它们彼此间隔开以限定狭槽; 覆盖所述槽道波导的至少一部分的第一上层; 以及覆盖槽道波导的剩余部分的第二上层。 通道波导的热光系数（TOC）乘以第二上层的TOC是负数。

公开(公告)号：US07394104B2

公开(公告)日：2008-07-01

申请号：US11698418

申请日：2007-01-25

Applicant: Hyun Woo Song ,  O Kyun Kwon ,  Won Seok Han ,  Sang Hee Park ,  Jong Hee Kim ,  Jae Heon Shin ,  Young Gu Ju

Inventor： Hyun Woo Song ,  O Kyun Kwon ,  Won Seok Han ,  Sang Hee Park ,  Jong Hee Kim ,  Jae Heon Shin ,  Young Gu Ju

IPC: H01L27/15

CPC classification number: H01L33/145 ,  H01S5/18308 ,  H01S5/18316 ,  H01S5/18347 ,  H01S5/3095 ,  H01S2301/176

Abstract: Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them. The semiconductor optical device having the current-confined region is mechanically reliable, highly thermally conductive, and commercially preferable and can be used in a wavelength range for optical communications.

Abstract translation: 提供了具有限流结构的半导体光学器件。 该器件包括：第一导电类型的第一半导体层，其形成在半导体衬底上并且包括一个或多个材料层;第二半导体层，形成在第一半导体层上并包括一个或多个材料层;第三半导体层， 第二导电类型的半导体层，其形成在第二半导体层上并且包括一个或多个材料层。 第一半导体层，第二半导体和第三半导体层中的一层或多层具有台面结构。 构成第一半导体层，第二半导体层和第三半导体层的至少一个材料层的侧面部分被凹入，并且凹部被部分地或全部地填充有氧化物层，氮化物层或者 他们。 具有电流限制区域的半导体光学器件是机械可靠的，高导热性的，并且是商业上优选的，并且可以用于光通信的波长范围。