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公开(公告)号：US11807777B2
公开(公告)日：2023-11-07
申请号：US16801230
申请日：2020-02-26
Applicant: SILCOTEK CORP.
Inventor： David A. Smith , James B. Mattzela , Paul H. Silvis , Gary A. Barone , Martin E. Higgins
CPC classification number: C09D5/00 , C23C16/0272 , C23C16/18 , C23C16/30 , C23C16/401 , C23C16/56 , C23C30/00 , Y10T428/265 , Y10T428/31612 , Y10T428/31663
Abstract: Amorphous coatings and coated articles having amorphous coatings are disclosed. The amorphous coating comprises a first layer and a second layer, the first layer being proximal to a metal substrate compared to the second layer, the second layer being distal from the metal substrate compared to the first layer. The first layer and the second layer comprise carbon, hydrogen, and silicon. The first layer further comprises oxygen.
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公开(公告)号：US20230074641A1
公开(公告)日：2023-03-09
申请号：US17795081
申请日：2021-01-22
Applicant: SILCOTEK CORP.
Inventor： Jesse BISCHOF , Martin E. HIGGINS , Thomas WINTER
Abstract: Pharmaceutical manufacturing processes and products are disclosed. A pharmaceutical manufacturing process includes flowing a liquid through a pathway. The liquid contacts a non-polymeric coating on a substrate within the pathway. The substrate is a metal or metallic substrate. A pharmaceutical product is produced by flowing a liquid through a pathway. The liquid contacts a non-polymeric coating on a substrate within the pathway. The substrate is a metal or metallic substrate.
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公开(公告)号：US20220186040A1
公开(公告)日：2022-06-16
申请号：US17684860
申请日：2022-03-02
Applicant: SILCOTEK CORP.
Inventor： David A. SMITH , Min YUAN , James B. MATTZELA , Paul H. SILVIS
Abstract: Industrial equipment articles and thermal chemical vapor coated articles are disclosed. The articles include a coating on a substrate of the industrial equipment article, the coating including silicon, carbon, and hydrogen. The industrial equipment article requires resistance to protein adsorption. The industrial equipment article was heated during application of the coating to a temperature of between 300 degrees C. and 600 degrees C. The thermal chemical vapor coated article includes a coating on the thermal chemical vapor coated article, the coating formed by thermal decomposition, oxidation, then functionalization. The thermal chemical vapor coated article is industrial equipment requiring resistance to protein adsorption. The coating is resistant to the protein adsorption and is on a substrate heated during the thermal decomposition.
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公开(公告)号：US20220073754A1
公开(公告)日：2022-03-10
申请号：US17407902
申请日：2021-08-20
Applicant: SILCOTEK CORP.
Inventor： Patrick DICK , David A. SMITH , Jesse BISCHOF , Ricky EDMISTON
Abstract: Medical device products have a coating with NAMSA Class VI certification and properties corresponding to the prior art coatings within U.S. Pat. No. 10,604,660. Medical device processes use the medical device product having a coating with NAMSA Class VI certification and properties corresponding to the prior art coatings within U.S. Pat. No. 10,604,660.
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公开(公告)号：US20190218661A1
公开(公告)日：2019-07-18
申请号：US16249314
申请日：2019-01-16
Applicant: SILCOTEK CORP.
Inventor： Geoffrey K. WHITE , Lucas D. PATTERSON , Corey M. ROBINSON , William David GROVE , Nicholas Peter DESKEVICH
IPC: C23C16/22
CPC classification number: C23C16/22
Abstract: A spooled arrangement and a process of producing a spooled arrangement are disclosed. The spooled arrangement includes a substrate, the substrate being metal or metallic. The substrate has an inner surface and an outer surface, the inner surface and the outer surface being in a furled configuration to define the spooled arrangement. The inner surface and the outer surface have a coating, the coating being an amorphous silicon coating, a silicon-oxygen-carbon-containing coating, a silicon-nitrogen-containing coating, a silicon-fluorine-carbon-containing coating, or a combination thereof. The process includes producing the spooled arrangement.
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Patent Agency Ranking
公开(公告)号：US10323321B1
公开(公告)日：2019-06-18
申请号：US14990889
申请日：2016-01-08
Applicant: SILCOTEK CORP.
Inventor： Min Yuan , Paul H. Silvis , James B. Mattzela
Abstract: Thermal chemical vapor deposition processes and coated articles are disclosed. The coated article includes a surface having a surface impurity and a coating on the surface formed by thermally reacting a gas. In comparison to a comparable coating without the surface impurity, the coating on the surface has substantially the same level of adhesion, corrosion resistance over 24 hours in 6M HCl, corrosion resistance over 72 hours in NaClO, and electrochemical impedance spectroscopy results. Additionally or alternatively, the surface impurity has properties that reduce or eliminate adhesion of a comparative coating produced by decomposition of silane on a comparative surface following exposure of the surface to a temperature.
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公开(公告)号：US10316408B2
公开(公告)日：2019-06-11
申请号：US14946115
申请日：2015-11-19
Applicant: SILCOTEK CORP. , AIXTRON SE
Inventor： David A. Smith , Min Yuan , James B. Mattzela , Olaf Martin Wurzinger , Dietmar Keiper , Anna Katharina Haab
Abstract: A delivery device, manufacturing system, and process of manufacturing are disclosed. The delivery device includes a feed tube and a chemical vapor deposition coating applied over an inner surface of the feed tube, the chemical vapor deposition coating being formed from decomposition of dimethylsilane. The manufacturing system includes the delivery device and a chamber in selective fluid communication with the delivery device. The process of manufacturing uses the manufacturing system to produce an article.
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公开(公告)号：US20190032201A1
公开(公告)日：2019-01-31
申请号：US15683399
申请日：2017-08-22
Applicant: SILCOTEK CORP.
Inventor： David A. SMITH , James B. MATTZELA , Paul H. SILVIS , Gary A. BARONE
CPC classification number: C23C16/325 , B05D1/60 , B05D2202/15 , C23C8/10 , C23C16/56 , Y10T428/24802
Abstract: The present invention relates to a coated article. The coated article includes a first layer, a second layer, and a diffusion region between the first layer and the second layer. The first layer has a first atomic concentration of C, a first atomic concentration of Si, and a first atomic concentration of O. The second layer has a first atomic concentration of Fe, a first atomic concentration of Cr, and a first atomic concentration of Ni. The diffusion region has a second atomic concentration of the C, a second atomic concentration of the Si, a second atomic concentration of the O, a second atomic concentration of the Fe, a second atomic concentration of the Cr, and a second atomic concentration of the Ni. All of the atomic concentrations are based upon Auger Electron Spectroscopy.
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公开(公告)号：US20180163308A1
公开(公告)日：2018-06-14
申请号：US15377657
申请日：2016-12-13
Applicant: SILCOTEK CORP.
Inventor： David A. SMITH
CPC classification number: C23C16/56 , B05D5/08 , B08B17/02 , B32B15/00 , C23C16/24 , C23C16/401 , C23C16/402 , C23C16/45523
Abstract: Thermal chemical vapor deposition treatment is disclosed. Specifically, a thermal chemical vapor deposition treated article includes a substrate, and an oleophobic treatment to the substrate, the oleophobic treatment having oxygen, carbon, silicon, fluorine, and hydrogen. The oleophobic treatment has a treatment thickness of less than 600 nm and a heterogeneous wetting regime. The thermal chemical vapor deposition process includes positioning an article within a thermal chemical vapor deposition chamber, thermally reacting dimethylsilane to produce a layer, oxidizing the layer to produce an oxidized layer, and fluoro-functionalizing the oxidized layer to produce an oxidized then fluoro-functionalizing dimethylsilane chemical vapor deposition treatment. The oxidized then fluoro-functionalizing dimethylsilane chemical vapor deposition treatment has a treatment thickness of less than 600 nm and a heterogeneous wetting regime.
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公开(公告)号：US09340880B2
公开(公告)日：2016-05-17
申请号：US14464748
申请日：2014-08-21
Applicant: SILCOTEK CORP.
Inventor： James B. Mattzela
Abstract: Semiconductor fabrication processes are described. An embodiment of the semiconductor fabrication process includes providing a layer formed by decomposition of dimethylsilane through chemical vapor deposition, the layer being applied by a fluid material, and then positioning the layer in a system for producing a semiconductor product. Additionally or alternatively, the semiconductor product is produced and/or the layer is on a substrate.
Abstract translation: 描述半导体制造工艺。 半导体制造工艺的一个实施例包括通过化学气相沉积提供由二甲基硅烷分解形成的层，该层由流体材料施加，然后将该层定位在用于制造半导体产品的系统中。 另外或替代地，制造半导体产品和/或该层在基底上。
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