公开(公告)号：US20020139005A1

公开(公告)日：2002-10-03

申请号：US10155402

申请日：2002-05-22

Applicant: Semitool, Inc.

Inventor： Ralph Wayne Thomas

IPC: F26B021/06

CPC classification number: H01L21/67017

Abstract: A machine for processing semiconductor wafers and similar articles has an ozone remover connected to a processing chamber. The ozone remover has a light chamber surrounded by reflectors. Ozone and other processing gases and vapors flow out of the processing chamber and into the light chamber. Ultraviolet lights in the ozone remover flood the light chamber with ultraviolet light, converting ozone into oxygen. The amount of ozone released into the environment is reduced. A recirculation line receives the gases and vapors flowing out of the ozone remover. Oxygen and any remaining ozone are separated from other gas and vapor components and are recycled back to an ozone generator, to increase the ozone generator efficiency in supplying the machine with ozone.

Abstract translation: 用于处理半导体晶片和类似物品的机器具有连接到处理室的臭氧去除器。 臭氧去除器具有被反射器包围的光室。 臭氧和其他处理气体和蒸汽从处理室流出并进入光室。 臭氧去除剂中的紫外光使紫外线泛光，将臭氧转化为氧气。 释放到环境中的臭氧的量减少。 再循环管线接收从臭氧去除剂流出的气体和蒸汽。 氧气和任何剩余的臭氧与其他气体和蒸汽组分分离，并再循环回到臭氧发生器，以增加臭氧发生器在向机器提供臭氧的效率。

公开(公告)号：US20020051700A1

公开(公告)日：2002-05-02

申请号：US09907523

申请日：2001-07-16

Applicant: Semitool Inc.

Inventor： Jeffry Davis

IPC: B65G001/00

CPC classification number: H01L21/67769 ,  H01L21/67754 ,  H01L21/67772 ,  H01L21/67775 ,  H01L21/67778 ,  H01L21/67781 ,  H01L21/68707 ,  Y10S414/141

Abstract: An automated workpiece processing system has a transfer robot including an end effector having arms which move linearly towards each other to pick up a workpiece. Each arm has two workpiece contactors for engaging the edges of the workpiece. The contactors are positioned equally distant from the workpiece edges. The arms are moved linearly together, while they remain parallel to each other. The contactors contact the edges of the workpiece without causing sliding or displacement of the workpiece. Transfer robot movement or pre-positioning of the end effector is minimized, expediting handling of workpieces within the automated system.

Abstract translation: 自动化工件处理系统具有传送机器人，其包括具有彼此线性移动以拾取工件的臂的末端执行器。 每个臂具有两个用于接合工件边缘的工件接触器。 接触器的位置与工件边缘相等。 臂彼此线性移动，而它们保持彼此平行。 接触器接触工件的边缘而不会导致工件的滑动或移动。 传送机器人移动或端部执行器的预定位最小化，加速了自动化系统内的工件的处理。

公开(公告)号：US20020050628A1

公开(公告)日：2002-05-02

申请号：US09990019

申请日：2001-11-21

Applicant: Semitool, Inc.

Inventor： Ahila Krishnamoorthy ,  David J. Duquette ,  Shyam P. Murarka

IPC: H01L027/102

CPC classification number: H01L21/76846 ,  C25D3/58 ,  C25D5/18 ,  C25D7/12 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76877 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metallized structure for use in a microelectronic circuit is set forth. The metallized structure comprises a dielectric layer, an ultra-thin film bonding layer disposed exterior to the dielectric layer, and a low-Me concentration, copper-Me alloy layer disposed exterior to the ultra-thin film bonding layer. The Me is a metal other than copper and, preferably, is zinc. The concentration of the Me is less than about 5 atomic percent, preferably less than about 2 atomic percent, and even more preferably, less than about 1 atomic percent. In a preferred embodiment of the metallized structure, the dielectric layer, ultra-thin film bonding layer and the copper-Me alloy layer are all disposed immediately adjacent one another. If desired, a primary conductor, such as a film of copper, may be formed exterior to the foregoing layer sequence. The present invention also contemplates methods for forming the foregoing structure as well as electroplating baths that may be used to deposit the copper-Me alloy layer.

公开(公告)号：US20020000271A1

公开(公告)日：2002-01-03

申请号：US09386734

申请日：1999-08-31

Applicant: SEMITOOL, INC.

Inventor： THOMAS RITZDORF ,  E. HENRY STEVENS ,  LINLIN CHEN ,  LYNDON W. GRAHAM ,  CURT DUNDAS

IPC: C25D005/50

CPC classification number: H01L21/67173 ,  C25D5/022 ,  C25D5/50 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/6723 ,  H01L21/76838 ,  H01L21/76877 ,  H01L21/76883

Abstract: A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.

Abstract translation: 阐述了在金属化的微电子工件（例如半导体晶片）的表面处填充凹陷微结构的方法。 根据该方法，金属层通过诸如电镀工艺的工艺沉积到微结构中，该工艺产生足够小的金属颗粒，以便基本上填充凹陷的微结构。 沉积的金属随后在低于约100摄氏度的温度下进行退火处理，并且甚至可以在环境室温下进行，以允许提供最佳电性能的晶粒生长。 还提出了用于执行独特退火工艺的各种新型装置。

公开(公告)号：US20010042689A1

公开(公告)日：2001-11-22

申请号：US09885232

申请日：2001-06-20

Applicant: Semitool, Inc.

Inventor： Linlin Chen

IPC: C25D005/18 ,  C25D005/02 ,  C25D005/10 ,  C25D003/38

CPC classification number: C25D7/123 ,  C23C28/322 ,  C23C28/34 ,  C25D3/38 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  H05K3/423

Abstract: This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

公开(公告)号：US20040092065A1

公开(公告)日：2004-05-13

申请号：US10695419

申请日：2003-10-27

Applicant: Semitool, Inc.

Inventor： Linlin Chen ,  Thomas Taylor

IPC: H01L021/4763

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089 ,  H05K3/423

Abstract: A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

公开(公告)号：US20040010930A1

公开(公告)日：2004-01-22

申请号：US10200073

申请日：2002-07-19

Applicant: Semitool, Inc.

Inventor： Kert Dolechek ,  Jeffry Davis

IPC: F26B017/24 ,  F26B017/30 ,  F26B019/00 ,  F26B025/06 ,  F26B005/08

CPC classification number: H01L21/67034 ,  H01L21/67028

Abstract: A centrifugal processor includes an elongated inlet and outlet in fluid communication with a rotor housing having an eccentric bowl. A rotor having fan blades and adapted to hold flat media is rotatably disposed within the rotor housing. An intake gate is pivotably mounted to the rotor housing to swing about the rotor into a closed position during a rinse mode and into an open position during a drying mode. The gate has a wedge that is designed to almost contact the rotor when the gate is in the open position for drying. The geometry of the elongated inlet, outlet, and eccentric bowl, in combination with the design of the rotor and that of the intake gate, work together to create a cross flow fan having a flow path across the flat media and one that exposes the flat media to large volumes of incoming air only once.

Abstract translation: 离心处理器包括与具有偏心碗的转子壳体流体连通的细长入口和出口。 具有风扇叶片并且适于保持扁平介质的转子可旋转地设置在转子壳体内。 进气门可枢转地安装到转子壳体上，以在冲洗模式期间围绕转子摆动到关闭位置，并且在干燥模式期间进入打开位置。 闸门具有楔形件，当楔门处于打开位置进行干燥时，该楔形件设计成几乎接触转子。 细长的入口，出口和偏心碗的几何结构与转子的设计和进气门的几何结合在一起，以形成横流式风扇，该横流式风扇具有穿过平面介质的流动路径， 媒体大量进入空气只有一次。

公开(公告)号：US20030155249A1

公开(公告)日：2003-08-21

申请号：US10302711

申请日：2002-11-22

Applicant: Semitool, Inc.

Inventor： Linlin Chen ,  Thomas Taylor

IPC: C25D005/54 ,  C25D017/00

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089 ,  H05K3/423

Abstract: A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

公开(公告)号：US20030136431A1

公开(公告)日：2003-07-24

申请号：US10056706

申请日：2002-01-24

Applicant: Semitool, Inc.

Inventor： Dana Scranton ,  Steve Eudy

IPC: B08B001/04 ,  B08B003/00

CPC classification number: H01L21/67046 ,  B08B1/04 ,  B08B3/10 ,  H01L21/67028

Abstract: In a post chemical-mechanical polishing (CMP) procedure for cleaning a workpiece, a cleaning solution is delivered to the core of a brush where the solution is absorbed by the brush and then applied by the brush onto the workpiece. The cleaning solution is uniformly applied to the workpiece. The volumes of solutions used in the scrubbing process is reduced. A thin oxide layer is etched. A hydrophilic surface state is maintained. The workpiece is then rinsed and dried in a centrifugal processing between upper and lower rotors. A high level clean is achieved while consumption of rinsing and drying fluids is reduced.

Abstract translation: 在用于清洁工件的后期化学机械抛光（CMP）程序中，将清洁溶液输送到刷子的芯部，其中溶液被刷子吸收，然后通过刷子施加到工件上。 清洗液均匀地涂在工件上。 洗涤过程中使用的溶液体积减少。 蚀刻薄的氧化物层。 保持亲水表面状态。 然后在上下转子之间的离心加工中冲洗和干燥工件。 在消耗冲洗和干燥流体的同时，实现了高水平的清洁。

公开(公告)号：US20030136422A1

公开(公告)日：2003-07-24

申请号：US10055302

申请日：2002-01-23

Applicant: Semitool, Inc.

Inventor： Dana Scranton

IPC: B08B003/12

CPC classification number: H01L21/67057 ,  B08B3/12

Abstract: A device for the side-specific cleaning of a microelectronic workpiece having a front side, a back side, and an edge includes a chamber, a fixture within the chamber that is adapted to hold one or more microelectronic workpieces. At least one transducer is located within the chamber and preferably adjacent to the edge of the microelectronic workpiece. The method includes the steps of immersing the front side, back side, and edge of the microelectronic workpiece in a first processing fluid while preferably rotating the microelectronic workpiece. The microelectronic workpiece is then rinsed and dried and immersed in a second processing fluid such that the back side and edge of the microelectronic workpiece are immersed in the second processing fluid, while preferably rotating the microelectronic workpiece, without exposing the front surface of the microelectronic workpiece to the second processing fluid. Vibrational energy, preferably in the form of megasonics, is introduced during at least one of the immersions steps.

Abstract translation: 用于侧面清洁具有前侧，后侧和边缘的微电子工件的装置包括腔室，室内的固定件，其适于容纳一个或多个微电子工件。 至少一个换能器位于腔室内并且优选地邻近微电子工件的边缘。 该方法包括以下步骤：将微电子工件的正面，背面和边缘浸入第一处理流体中，同时优选地旋转微电子工件。 然后将微电子工件冲洗并干燥并浸入第二处理流体中，使得微电子工件的背面和边缘浸入第二处理流体中，同时优选地旋转微电子工件，而不暴露微电子工件的前表面 到第二处理流体。 优选以兆声波形式的振动能量在至少一个浸入步骤期间引入。