Light emitting device having light emitting elements
    12.
    发明授权
    Light emitting device having light emitting elements 有权
    具有发光元件的发光器件

    公开(公告)号:US07569861B2

    公开(公告)日:2009-08-04

    申请号:US12352271

    申请日:2009-01-12

    Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

    Abstract translation: 在高驱动电压和小驱动电流下工作的发光装置。 LED(1)二次形成在例如蓝宝石的绝缘基板(10)上,并且串联连接以形成LED阵列。 两个这样的LED阵列反向并联连接到电极(32)。 在LED(1)之间以及LED(1)和电极(32)之间形成空气桥接线(28)。 LED阵列以Z字形排列以形成多个LED(1)以产生高驱动电压和小的驱动电流。 两个LED阵列相反并联连接,因此可以使用交流电源作为电源。

    Light-emitting device having light-emitting elements
    13.
    发明申请
    Light-emitting device having light-emitting elements 有权
    具有发光元件的发光装置

    公开(公告)号:US20070138500A1

    公开(公告)日:2007-06-21

    申请号:US11705205

    申请日:2007-02-12

    Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

    Abstract translation: 在高驱动电压和小驱动电流下工作的发光装置。 LED(1)二次形成在例如蓝宝石的绝缘基板(10)上,并且串联连接以形成LED阵列。 两个这样的LED阵列反向并联连接到电极(32)。 在LED(1)之间以及LED(1)和电极(32)之间形成空气桥接线(28)。 LED阵列以Z字形排列以形成多个LED(1)以产生高驱动电压和小的驱动电流。 两个LED阵列相反并联连接,因此可以使用交流电源作为电源。

    SPECTRUM DETECTOR
    15.
    发明申请
    SPECTRUM DETECTOR 审中-公开
    光谱检测器

    公开(公告)号:US20150276475A1

    公开(公告)日:2015-10-01

    申请号:US14678557

    申请日:2015-04-03

    Abstract: A spectrum detector includes a substrate, a photodetector formed on the substrate and including a semiconductor having a plurality of convex portions, and a wavelength detection circuit for detecting a wavelength of light transmitted through the plurality of convex portions. Each photodetector comprises different convex portions different from one another with respect to at least one of size, pitch, and height. The photodetectors have a relationship expressed by formula L·m=λ·cos θ/(2n), wherein L is a diameter of each convex portion, n is a refractive index between the air and each convex portion of the GaN layer, m is an integer or a reciprocal of an integer, λ is a wavelength of light transmitted through the plurality of convex portions of each photodetector, and θ is an incident angle of the light with respect to a surface of the p-GaN layer.

    Abstract translation: 光谱检测器包括基板,形成在基板上的包括具有多个凸部的半导体的光电检测器和用于检测透过多个凸部的光的波长的波长检测电路。 每个光电检测器包括相对于尺寸,间距和高度中的至少一个而彼此不同的不同凸部。 光电检测器具有由公式L·m =λ·cosθ/(2n)表示的关系,其中L是每个凸部的直径,n是空气与GaN层的每个凸部之间的折射率,m 是整数的整数或倒数,λ是透过各光电检测器的多个凸部的光的波长, 是相对于p-GaN层的表面的光的入射角。

    Light emitting device having shared electrodes
    17.
    发明授权
    Light emitting device having shared electrodes 有权
    具有共用电极的发光装置

    公开(公告)号:US08735911B2

    公开(公告)日:2014-05-27

    申请号:US13610819

    申请日:2012-09-11

    Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

    Abstract translation: 在高驱动电压和小驱动电流下工作的发光装置。 LED(1)二次形成在例如蓝宝石的绝缘基板(10)上,并且串联连接以形成LED阵列。 两个这样的LED阵列反向并联连接到电极(32)。 在LED(1)之间以及LED(1)和电极(32)之间形成空气桥接线(28)。 LED阵列以Z字形排列以形成多个LED(1)以产生高驱动电压和小的驱动电流。 两个LED阵列相反并联连接,因此可以使用交流电源作为电源。

    Light-emitting device having light-emitting elements with a shared electrode
    18.
    发明授权
    Light-emitting device having light-emitting elements with a shared electrode 有权
    发光元件具有共用电极的发光元件

    公开(公告)号:US08680533B2

    公开(公告)日:2014-03-25

    申请号:US12652518

    申请日:2010-01-05

    Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

    Abstract translation: 在高驱动电压和小驱动电流下工作的发光装置。 LED(1)二次形成在例如蓝宝石的绝缘基板(10)上,并且串联连接以形成LED阵列。 两个这样的LED阵列反向并联连接到电极(32)。 在LED(1)之间以及LED(1)和电极(32)之间形成空气桥接线(28)。 LED阵列以Z字形排列以形成多个LED(1)以产生高驱动电压和小的驱动电流。 两个LED阵列相反并联连接,因此可以使用交流电源作为电源。

    Semiconductor substrate, method of fabricating the same, semiconductor device, and method of fabricating the same
    20.
    发明授权
    Semiconductor substrate, method of fabricating the same, semiconductor device, and method of fabricating the same 有权
    半导体衬底,其制造方法,半导体器件及其制造方法

    公开(公告)号:US08294183B2

    公开(公告)日:2012-10-23

    申请号:US12650276

    申请日:2009-12-30

    Applicant: Shiro Sakai

    Inventor: Shiro Sakai

    Abstract: The present invention provides a fabrication method of a semiconductor substrate, by which a planar GaN substrate that is easily separated can be fabricated on a heterogeneous substrate, and a semiconductor device which is fabricated using the GaN substrate. The semiconductor substrate comprises a substrate, a first semiconductor layer arranged on the substrate, a metallic material layer arranged on the first semiconductor layer, a second semiconductor layer arranged on the first semiconductor layer and the metallic material layer, and voids formed in the first semiconductor layer under the metallic material layer.

    Abstract translation: 本发明提供了一种半导体衬底的制造方法,通过该方法可以在非均匀衬底上制造容易分离的平面GaN衬底,以及使用该GaN衬底制造的半导体器件。 半导体衬底包括衬底,布置在衬底上的第一半导体层,布置在第一半导体层上的金属材料层,布置在第一半导体层和金属材料层上的第二半导体层,以及形成在第一半导体中的空隙 在金属材料层下面。

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