Apparatus for selectively backlighting a material
    11.
    发明授权
    Apparatus for selectively backlighting a material 有权
    用于选择性地背光材料的设备

    公开(公告)号:US08128249B2

    公开(公告)日:2012-03-06

    申请号:US11846360

    申请日:2007-08-28

    Abstract: A backlighting device (300, 400, 500, 600) emitting light having a first wavelength includes a first radiation emission device (302), e.g., an electroluminescent lamp, for emitting radiation having a second wavelength. A layer (306) of a plurality of photon emitting particles (308), e.g., free standing quantum dots or phosphorus particles, emits light having the first wavelength in response to the first radiation emission device (302), the first wavelength being larger than the second wavelength. A transparent material (116, 120, 122) overlies the layer of a plurality of photon emitting particles (308), wherein the light having a first wavelength passes through the transparent material (116, 120, 122). Optionally, a filter (402) may be placed over the layer (306) to block the radiation having a second wavelength, and a scattering layer (604) may be placed over the layer (306) to scatter wavelength other than the first wavelength.

    Abstract translation: 发射具有第一波长的光的背光装置(300,400,500,600)包括用于发射具有第二波长的辐射的第一辐射发射装置(302),例如电致发光灯。 多个光子发射粒子(308)的层(306)(例如,独立量子点或磷粒子)响应于第一辐射发射装置(302)发射具有第一波长的光,第一波长大于 第二波长。 透明材料(116,120,122)覆盖多个光子发射颗粒(308)的层,其中具有第一波长的光通过透明材料(116,120,122)。 可选地,过滤器(402)可以放置在层(306)上以阻挡具有第二波长的辐射,并且可以在层(306)上方布置散射层(604)以散射除了第一波长之外的波长。

    Encapsulated organic semiconductor device and method
    12.
    发明授权
    Encapsulated organic semiconductor device and method 有权
    封装有机半导体器件及方法

    公开(公告)号:US07393716B2

    公开(公告)日:2008-07-01

    申请号:US11108025

    申请日:2005-04-15

    Abstract: A semiconductor device comprising organic semiconductor material (14) has one or more barrier layers (16) disposed at least partially thereabout to protect the organic semiconductor material (14) from environment-driven changes that typically lead to inoperability of a corresponding device. If desired, the barrier layer can be comprised of partially permeable material that allows some substances therethrough to thereby effect disabling of the encapsulated organic semiconductor device after a substantially predetermined period of time. Getterers (141) may also be used to protect, at least for a period of time, such organic semiconductor material.

    Abstract translation: 包括有机半导体材料(14)的半导体器件具有至少部分设置在其周围的一个或多个阻挡层(16),以保护有机半导体材料(14)免受通常导致相应器件的不可操作性的环境驱动的变化。 如果需要,阻挡层可以由允许一些物质通过其的部分渗透性材料构成,从而在基本上预定的时间段之后使封装的有机半导体器件失效。 乞丐(141)也可用于至少在一段时间内保护这种有机半导体材料。

    Noncollapsing multisolder interconnection
    15.
    发明授权
    Noncollapsing multisolder interconnection 失效
    非聚合多金属互连

    公开(公告)号:US5233504A

    公开(公告)日:1993-08-03

    申请号:US919338

    申请日:1992-07-27

    Abstract: An improved electrical component package comprises a component attached to a substrate by a plurality of multisolder interconnections. Each interconnection comprises a preformed spacer bump composed of a first solder alloy, preferably a lead-base tin alloy containing greater than 90 weight percent lead. The spacer bump is directly metallurgically bonded to a metallic electrical contact of the component and rests against a corresponding metallic electrical contact of the substrate, but is not bonded thereto. Each interconnection further comprises a sheath portion formed of a second compositionally distinct solder alloy having a liquidus temperature less than the first alloy solidus temperature. A preferred second solder is a tin-lead alloy comprising between about 30 and 50 weight percent lead and the balance tin or indium. The sheath is bonded to the spacer bump and to the substrate contact to complete attachment of the component to the substrate and preferably extends to the component contact, encasing the bump, to produce an interconnection having an hour glass configuration to reduce thermal fatigue stresses at the solder bonds to the contacts.

    Abstract translation: 改进的电子部件封装包括通过多个多金属互连连接到基板的部件。 每个互连包括由第一焊料合金构成的预制间隔凸块,优选含有大于90重量%铅的铅基锡合金。 间隔件凸块直接冶金结合到部件的金属电接触件上,并抵靠基板的对应的金属电接触件,但不与其结合。 每个互连还包括由液态温度小于第一合金固相线温度的第二组成不同的焊料合金形成的护套部分。 优选的第二焊料是锡铅合金,其包含约30至50重量%的铅和余量的锡或铟。 护套结合到间隔件凸块和衬底接触件以完成组件到衬底的附接,并且优选地延伸到组件接触件,包住凸块,以产生具有小时玻璃构造的互连,以减少在 焊接到触点。

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