摘要:
An improved electrical component package comprises a component attached to a substrate by a plurality of multisolder interconnections. Each interconnection comprises a preformed spacer bump composed of a first solder alloy, preferably a lead-base tin alloy containing greater than 90 weight percent lead. The spacer bump is directly metallurgically bonded to a metallic electrical contact of the component and rests against a corresponding metallic electrical contact of the substrate, but is not bonded thereto. Each interconnection further comprises a sheath portion formed of a second compositionally distinct solder alloy having a liquidus temperature less than the first alloy solidus temperature. A preferred second solder is a tin-lead alloy comprising between about 30 and 50 weight percent lead and the balance tin or indium. The sheath is bonded to the spacer bump and to the substrate contact to complete attachment of the component to the substrate and preferably extends to the component contact, encasing the bump, to produce an interconnection having an hour glass configuration to reduce thermal fatigue stresses at the solder bonds to the contacts.
摘要:
An improved electrical component package comprises a component attached to a substrate by a plurality of multisolder interconnections. Each interconnection comprises a preformed spacer bump composed of a first solder alloy, preferably a lead-base tin alloy containing greater than 90 weight percent lead. The spacer bump is bonded to a metallic electrical contact of the component and rests against a corresponding metallic electrical contact of the substrate, but is not directly metallurgically bonded thereto. Each interconnection further comprises a sheath portion formed of a second compositionally distinct solder alloy having a liquidus temperature less than the first alloy solidus temperature. A preferred second solder is a tin-lead alloy comprising between about 30 and 50 weight percent lead and the balance tin or indium. The sheath is bonded to the spacer bump and to the substrate contact to complete attachment of the component to the substrate and preferably extends to the component contact, encasing the bump, to produce an interconnection having an hour glass configuration to reduce thermal fatigue stresses at the solder bonds to the contacts. A method for forming the multisolder interconnection is presented wherein the sheath is derived from a solder microball situated on the substrate contact in juxtaposition to the spacer bump for reflow.
摘要:
A body formed of a lead-tin solder alloy is pretreated to deposit palladium thereon prior to soldering to a metallic substrate. It is found that the palladium deposit enhances wetting of the substrate by the solder liquid during reflow and thereby, upon cooling, produces a strong metallurgical bond. In a preferred embodiment, lead-tin solder balls are pretreated by applying tin-palladium colloidal particles and dissociating the particles to form a discontinuous metallic palladium deposit.
摘要:
An electroless immersion plating process for depositing a tin-bismuth plate onto a surface formed of copper or the like comprises immersing the surface into an acidic aqueous solution comprising a tin alkane sulfonate compound, preferably tin methane sulfonate, and a bismuth alkane sulfonate compound, preferably bismuth methane sulfonate. The solution also contains thiourea in an amount effective to reduce tin at the surface. The bismuth compound is added in an amount to produce a bismuth concentration that is less than about 1.0 gram per liter. Furthermore, the ratio of tin to bismuth in the solution is at least 30 to 1, and preferably at least 50 to 1. The process deposits a dense, adherent plate composed of a tin-bismuth alloy containing at least 50 weight percent tin and preferably containing greater than 70 weight percent tin, which plate is well suited for use in microelectronic soldering operations.
摘要:
A solder connection (30) is formed based upon a tinindium or tin-bismuth alloy, but having a melting temperature greater than the melting temperature of the initial solder alloy. A deposit (26) of solder alloy is placed against a tin plate (24) applied, preferably by electrodeposition, to a first faying surface (18). Following assembling with a second faying surface (22), the assembly is heated to melt the solder deposit, whereupon tin from the tin plate dissolves into the solder liquid to form a tin-enriched alloy having an increased melting temperature.
摘要:
An electroless immersion plating process for depositing a tin-bismuth plate onto a surface formed of copper or the like comprises immersing the surface into an acidic aqueous solution comprising a tin alkane sulfonate compound, preferably tin methane sulfonate, and a bismuth alkane sulfonate compound, preferably bismuth methane sulfonate. The solution also contains thiourea in an amount effective to reduce tin at the surface. The bismuth compound is added in an amount to produce a bismuth concentration that is less than about 1.0 gram per liter. Furthermore, the ratio of tin to bismuth in the solution is at least 30 to 1, and preferably at least 50 to 1. The process deposits a dense, adherent plate composed of a tin-bismuth alloy containing at least 50 weight percent tin and preferably containing greater than 70 weight percent tin, which plate is well suited for use in microelectronic soldering operations.
摘要:
An electronic package comprises a component mounted on a substrate, such as a printed circuit board, by a solder connection that is based upon a tin alloy containing zinc. The connection is formed to copper faying surface on the substrate, and includes a first layer formed of a zinc-free tin metal bonded to the copper surface and a second layer formed of the tin-zinc solder alloy bonded to the first layer. The first layer provides a zinc-free barrier between the copper and the tin-zinc alloy to retard zinc migration to the copper interface that would otherwise result in dezincification of the solder alloy and reduce the mechanical properties of the connection.
摘要:
A microelectronic package (10) is formed by placing a lead frame (22) onto an adhesive polyimide tape (38). The lead frame (22) includes a plurality of metallic leads (16) and an opening. An integrated circuit die (12) is positioned onto the molding support (38) within the opening such that a non-active face (32) of the integrated circuit die (12) rests against the molding support (38). Wire leads (18) connect an active face (28) of the integrated circuit die (12) to the metallic leads (16). A plurality of metallic bumps (20) are attached to the metallic leads (16), and a polymeric precursor is dispensed. The precursor embeds the active face (28) of the integrated circuit die (12), the inner surface (19) of the metallic leads (16), the wire leads (18), and the metallic bumps (20). The microelectronic package (10) is then heated to cure the polymeric precursor to form a polymeric body (14). The microelectronic package (10) is then capable of being tested and subsequently attached to printed circuit board (40) to form a low-profile microelectronic assembly (11).
摘要:
A microelectronic package (10) is formed and includes an integrated circuit die (12) attached to a substrate (14) by a plurality of solder bump interconnections (16) to form a preassembly (18). The integrated circuit die (12) has an active face (20) that faces the substrate (14) and is spaced apart therefrom by a gap (22). The integrated circuit die (12) also includes a back face (24) opposite the active face (20). The substrate (14) includes a die attach region (26) and a surrounding region (28) about the integrated circuit die (12). The solder bump interconnections (16) extend across the gap (22) and connect the integrated circuit die (12) and the substrate (14). A mold (30) is disposed about the preassembly (18) such that the mold (30) cooperates with the substrate (14) to define a mold cavity (32) that encloses the integrated circuit die (12). The mold (30) has a molding surface (34) that includes the surrounding region (28) and a mold surface (34) that faces the back face (24) and is spaced apart therefrom. A polymeric precursor (36) is dispensed into the mold cavity (32) and is formed against the molding surface (34) and the back face (24). The polymeric precursor (36) is then cured to form a polymeric encapsulant (38) that encapsulates the integrated circuit die (12).
摘要:
A microelectronic package (10) is formed and includes an integrated circuit die (12) attached to a substrate (14) by a plurality of solder bump interconnections (16) to form a preassembly (18). The integrated circuit die (12) has an active face (20) that faces the substrate (14) and is spaced apart therefrom by a gap (22). The integrated circuit die (12) also includes a back face (24) opposite the active face (20). The substrate (14) includes a die attach region (26) and a surrounding region (28) about the integrated circuit die (12). The solder bump interconnections (16) extend across the gap (22) and connect the integrated circuit die (12) and the substrate (14). A mold (30) is disposed about the preassembly (18) such that the mold (30) cooperates with the substrate (14) to define a mold cavity (32) that encloses the integrated circuit die (12). The mold (30) has a molding surface (34) that includes the surrounding region (28) and a mold surface (34) that faces the back face (24) and is spaced apart therefrom. A polymeric precursor (36) is dispensed into the mold cavity (32) and is formed against the molding surface (34) and the back face (24). The polymeric precursor (36) is then cured to form a polymeric encapsulant (38) that encapsulates the integrated circuit die (12).