Noncollapsing multisolder interconnection
    1.
    发明授权
    Noncollapsing multisolder interconnection 失效
    非聚合多金属互连

    公开(公告)号:US5233504A

    公开(公告)日:1993-08-03

    申请号:US919338

    申请日:1992-07-27

    IPC分类号: H01L23/498 H05K3/34

    摘要: An improved electrical component package comprises a component attached to a substrate by a plurality of multisolder interconnections. Each interconnection comprises a preformed spacer bump composed of a first solder alloy, preferably a lead-base tin alloy containing greater than 90 weight percent lead. The spacer bump is directly metallurgically bonded to a metallic electrical contact of the component and rests against a corresponding metallic electrical contact of the substrate, but is not bonded thereto. Each interconnection further comprises a sheath portion formed of a second compositionally distinct solder alloy having a liquidus temperature less than the first alloy solidus temperature. A preferred second solder is a tin-lead alloy comprising between about 30 and 50 weight percent lead and the balance tin or indium. The sheath is bonded to the spacer bump and to the substrate contact to complete attachment of the component to the substrate and preferably extends to the component contact, encasing the bump, to produce an interconnection having an hour glass configuration to reduce thermal fatigue stresses at the solder bonds to the contacts.

    摘要翻译: 改进的电子部件封装包括通过多个多金属互连连接到基板的部件。 每个互连包括由第一焊料合金构成的预制间隔凸块,优选含有大于90重量%铅的铅基锡合金。 间隔件凸块直接冶金结合到部件的金属电接触件上,并抵靠基板的对应的金属电接触件,但不与其结合。 每个互连还包括由液态温度小于第一合金固相线温度的第二组成不同的焊料合金形成的护套部分。 优选的第二焊料是锡铅合金,其包含约30至50重量%的铅和余量的锡或铟。 护套结合到间隔件凸块和衬底接触件以完成组件到衬底的附接,并且优选地延伸到组件接触件,包住凸块,以产生具有小时玻璃构造的互连,以减少在 焊接到触点。

    Noncollapsing multisolder interconnection
    2.
    发明授权
    Noncollapsing multisolder interconnection 失效
    非聚合多金属互连

    公开(公告)号:US5154341A

    公开(公告)日:1992-10-13

    申请号:US622996

    申请日:1990-12-06

    IPC分类号: H01L23/498 H05K3/34

    摘要: An improved electrical component package comprises a component attached to a substrate by a plurality of multisolder interconnections. Each interconnection comprises a preformed spacer bump composed of a first solder alloy, preferably a lead-base tin alloy containing greater than 90 weight percent lead. The spacer bump is bonded to a metallic electrical contact of the component and rests against a corresponding metallic electrical contact of the substrate, but is not directly metallurgically bonded thereto. Each interconnection further comprises a sheath portion formed of a second compositionally distinct solder alloy having a liquidus temperature less than the first alloy solidus temperature. A preferred second solder is a tin-lead alloy comprising between about 30 and 50 weight percent lead and the balance tin or indium. The sheath is bonded to the spacer bump and to the substrate contact to complete attachment of the component to the substrate and preferably extends to the component contact, encasing the bump, to produce an interconnection having an hour glass configuration to reduce thermal fatigue stresses at the solder bonds to the contacts. A method for forming the multisolder interconnection is presented wherein the sheath is derived from a solder microball situated on the substrate contact in juxtaposition to the spacer bump for reflow.

    摘要翻译: 改进的电子部件封装包括通过多个多金属互连连接到基板的部件。 每个互连包括由第一焊料合金构成的预制间隔凸块,优选含有大于90重量%铅的铅基锡合金。 间隔凸块接合到部件的金属电接触件上,并抵靠基板的相应的金属电接触件,但不直接冶金结合到其上。 每个互连还包括由液态温度小于第一合金固相线温度的第二组成不同的焊料合金形成的护套部分。 优选的第二焊料是锡铅合金,其包含约30至50重量%的铅和余量的锡或铟。 护套结合到间隔件凸块和衬底接触件以完成组件到衬底的附接,并且优选地延伸到组件接触件,包住凸块,以产生具有小时玻璃构造的互连,以减少在 焊接到触点。 提出了一种用于形成多金属互连的方法,其中所述护套从位于所述衬底触点上的焊料微球导出并置到用于回流的间隔件凸块。

    Immersion plating of tin-bismuth solder

    公开(公告)号:US5435838A

    公开(公告)日:1995-07-25

    申请号:US334998

    申请日:1994-11-07

    IPC分类号: C23C18/48 H05K3/34

    CPC分类号: C23C18/48 H05K3/3473

    摘要: An electroless immersion plating process for depositing a tin-bismuth plate onto a surface formed of copper or the like comprises immersing the surface into an acidic aqueous solution comprising a tin alkane sulfonate compound, preferably tin methane sulfonate, and a bismuth alkane sulfonate compound, preferably bismuth methane sulfonate. The solution also contains thiourea in an amount effective to reduce tin at the surface. The bismuth compound is added in an amount to produce a bismuth concentration that is less than about 1.0 gram per liter. Furthermore, the ratio of tin to bismuth in the solution is at least 30 to 1, and preferably at least 50 to 1. The process deposits a dense, adherent plate composed of a tin-bismuth alloy containing at least 50 weight percent tin and preferably containing greater than 70 weight percent tin, which plate is well suited for use in microelectronic soldering operations.

    Immersion plating of tin-bismuth solder
    6.
    发明授权
    Immersion plating of tin-bismuth solder 失效
    锡 - 铋焊锡浸镀

    公开(公告)号:US5391402A

    公开(公告)日:1995-02-21

    申请号:US160769

    申请日:1993-12-03

    IPC分类号: C23C18/48 H05K3/34 B05D1/18

    CPC分类号: C23C18/48 H05K3/3473

    摘要: An electroless immersion plating process for depositing a tin-bismuth plate onto a surface formed of copper or the like comprises immersing the surface into an acidic aqueous solution comprising a tin alkane sulfonate compound, preferably tin methane sulfonate, and a bismuth alkane sulfonate compound, preferably bismuth methane sulfonate. The solution also contains thiourea in an amount effective to reduce tin at the surface. The bismuth compound is added in an amount to produce a bismuth concentration that is less than about 1.0 gram per liter. Furthermore, the ratio of tin to bismuth in the solution is at least 30 to 1, and preferably at least 50 to 1. The process deposits a dense, adherent plate composed of a tin-bismuth alloy containing at least 50 weight percent tin and preferably containing greater than 70 weight percent tin, which plate is well suited for use in microelectronic soldering operations.

    摘要翻译: 将用于将铜铋平板沉积在由铜等形成的表面上的无电镀浸渍方法包括将表面浸入包含锡烷基磺酸盐化合物,优选甲磺酸锡和酸铋烷磺酸盐化合物的酸性水溶液中 甲磺酸铋。 该溶液还含有有效降低表面锡量的硫脲。 铋化合物的添加量为产生小于约1.0克/升的铋浓度。 此外,溶液中锡与铋的比例为至少30:1,优选至少50:1。该方法沉积由含有至少50重量%锡的锡 - 铋合金构成的致密的粘合板,优选 含有大于70重量%的锡,该板非常适合用于微电子焊接操作。

    Tin-zinc solder connection to a printed circuit board of the like
    7.
    发明授权
    Tin-zinc solder connection to a printed circuit board of the like 失效
    锡锌焊接到印刷电路板等

    公开(公告)号:US5390080A

    公开(公告)日:1995-02-14

    申请号:US57233

    申请日:1993-05-03

    摘要: An electronic package comprises a component mounted on a substrate, such as a printed circuit board, by a solder connection that is based upon a tin alloy containing zinc. The connection is formed to copper faying surface on the substrate, and includes a first layer formed of a zinc-free tin metal bonded to the copper surface and a second layer formed of the tin-zinc solder alloy bonded to the first layer. The first layer provides a zinc-free barrier between the copper and the tin-zinc alloy to retard zinc migration to the copper interface that would otherwise result in dezincification of the solder alloy and reduce the mechanical properties of the connection.

    摘要翻译: 电子封装包括通过基于含有锌的锡合金的焊料连接而安装在诸如印刷电路板的基板上的部件。 该连接形成在基板上的铜合金表面上,并且包括由结合到铜表面的无锌锡金属形成的第一层和由与第一层结合的锡 - 锌焊料合金形成的第二层。 第一层在铜和锡 - 锌合金之间提供无锌屏障,以阻止锌迁移到铜界面,否则会导致焊料合金脱锌并降低连接的机械性能。

    Low-profile microelectronic package
    8.
    发明授权
    Low-profile microelectronic package 有权
    薄型微电子封装

    公开(公告)号:US06194250B1

    公开(公告)日:2001-02-27

    申请号:US09152899

    申请日:1998-09-14

    IPC分类号: H01L2148

    摘要: A microelectronic package (10) is formed by placing a lead frame (22) onto an adhesive polyimide tape (38). The lead frame (22) includes a plurality of metallic leads (16) and an opening. An integrated circuit die (12) is positioned onto the molding support (38) within the opening such that a non-active face (32) of the integrated circuit die (12) rests against the molding support (38). Wire leads (18) connect an active face (28) of the integrated circuit die (12) to the metallic leads (16). A plurality of metallic bumps (20) are attached to the metallic leads (16), and a polymeric precursor is dispensed. The precursor embeds the active face (28) of the integrated circuit die (12), the inner surface (19) of the metallic leads (16), the wire leads (18), and the metallic bumps (20). The microelectronic package (10) is then heated to cure the polymeric precursor to form a polymeric body (14). The microelectronic package (10) is then capable of being tested and subsequently attached to printed circuit board (40) to form a low-profile microelectronic assembly (11).

    摘要翻译: 通过将引线框架(22)放置在粘合聚酰亚胺胶带(38)上形成微电子封装(10)。 引线框架(22)包括多个金属引线(16)和开口。 集成电路模具(12)被定位在开口内的模制支撑件(38)上,使得集成电路模具(12)的非活动面(32)靠在模制支撑件(38)上。 导线(18)将集成电路管芯(12)的有源面(28)连接到金属引线(16)。 多个金属凸块(20)连接到金属引线(16)上,分配聚合物前体。 前体嵌入集成电路管芯(12)的有源面(28),金属引线(16)的内表面(19),引线引线(18)和金属凸块(20)。 然后加热微电子封装(10)以固化聚合物前体以形成聚合体(14)。 微电子封装(10)然后能够被测试并且随后连接到印刷电路板(40)以形成薄型微电子组件(11)。