公开(公告)号：US20130329151A1

公开(公告)日：2013-12-12

申请号：US13636652

申请日：2012-06-28

Applicant: Xiaolong Ma ,  Hong-Ji Huang

Inventor： Xiaolong Ma ,  Hong-Ji Huang

IPC: G02F1/1337 ,  G02F1/136 ,  H01J9/00

CPC classification number: G02F1/133711 ,  G02F1/134363 ,  G02F2001/133742 ,  G02F2001/13706

Abstract: The present invention provides to a liquid crystal panel, which comprises: a first substrate, a second substrate, a coplanar transparent electrode layer and a liquid crystal layer. The first and second substrates have a first and second alignment films, respectively. The coplanar transparent electrode layer is disposed onto the second alignment film. The liquid crystal layer is disposed in a space between the first alignment film of the first substrate and the coplanar transparent electrode layer of the second substrate. The liquid crystal film comprises positive liquid crystal molecules and reactive mesogens (RMs). The liquid crystal panel of the present invention can overcome the problems of pollution and static electricity generated from the rubbing alignment in the IPS mode. In comparison with the PSVA mode, the present invention can simplify the manufacturing process and provide the advantages of high contrast, high response speed and wide viewing angle.

Abstract translation: 本发明提供一种液晶面板，其包括：第一基板，第二基板，共面透明电极层和液晶层。 第一和第二基板分别具有第一和第二取向膜。 共面透明电极层设置在第二取向膜上。 液晶层设置在第一基板的第一取向膜和第二基板的共面透明电极层之间的空间中。 液晶膜包含正极性液晶分子和反应性介晶（RMs）。 本发明的液晶面板可以克服在IPS模式下由摩擦对准产生的污染和静电的问题。 与PSVA模式相比，本发明可以简化制造工艺，并提供高对比度，高响应速度和宽视角的优点。

公开(公告)号：US20130314656A1

公开(公告)日：2013-11-28

申请号：US13521738

申请日：2012-05-30

Applicant: Xiaolong Ma ,  Hong-Ji Huang

Inventor： Xiaolong Ma ,  Hong-Ji Huang

IPC: G02F1/1337

CPC classification number: G02F1/133788 ,  G02F1/133711 ,  G02F2001/133715 ,  G02F2001/133749

Abstract: The present invention provides a method of liquid crystal (LC) alignment and LC panel, which includes: providing first substrate, forming first alignment film on surface of first substrate; providing second substrate, disposed oppositely to first substrate, and forming common electrodes, pixel electrodes disposed with separating space, and second alignment film covering common electrodes and pixel electrodes on surface of second substrate; filling LC composite between first alignment film and second alignment film, LC composite comprising reactive monomers and LC molecules; applying high frequency alternating electric field to common electrodes and pixel electrodes so that reactive monomers and LC molecules arranged perpendicular to high frequency alternating electric field with pretilt angle; continuing applying high frequency alternating electric field and using UV radiation to fix pretilt angle to perform alignment. The present invention does not use rubbing to perform alignment, and avoids pollution to LC panel.

Abstract translation: 本发明提供一种液晶（LC）取向和LC面板的方法，包括：提供第一衬底，在第一衬底的表面上形成第一取向膜; 提供与第一衬底相对设置的第二衬底，以及形成公共电极，设置有分隔空间的像素电极，以及覆盖第二衬底表面上的公共电极和像素电极的第二取向膜; 在第一取向膜和第二取向膜之间填充LC复合物，包含反​​应性单体和LC分子的LC复合物; 将高频交变电场施加到公共电极和像素电极，使反应性单体和LC分子垂直于具有预倾角的高频交变电场排列; 继续施加高频交变电场并使用紫外线辐射来固定预倾角以进行对准。 本发明不使用摩擦进行取向，避免了对LC面板的污染。

公开(公告)号：US20130221535A1

公开(公告)日：2013-08-29

申请号：US13517050

申请日：2012-02-29

Applicant: Xiaolong Ma ,  Huaxiang Yin ,  Lichuan Zhao

Inventor： Xiaolong Ma ,  Huaxiang Yin ,  Lichuan Zhao

IPC: H01L23/48 ,  B32B9/00 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/30 ,  H01L2924/00

Abstract: A diffusion barrier layer, a metal interconnect arrangement and a method of manufacturing the same are disclosed. In one embodiment, the metal interconnect arrangement may comprise a conductive plug/interconnect wire for electrical connection, and a diffusion barrier layer provided on at least a portion of a surface of the conductive plug/interconnect wire. The diffusion barrier layer may comprise insulating amorphous carbon.

Abstract translation: 公开了一种扩散阻挡层，金属互连装置及其制造方法。 在一个实施例中，金属互连装置可以包括用于电连接的导电插头/互连线，以及设置在导电插头/互连线的表面的至少一部分上的扩散阻挡层。 扩散阻挡层可以包括绝缘无定形碳。

公开(公告)号：US09276085B2

公开(公告)日：2016-03-01

申请号：US14387143

申请日：2012-04-26

Applicant: Huaxiang Yin ,  Xiaolong Ma ,  Changliang Qi ,  Qiuxia Xu ,  Dapeng Chen

Inventor： Huaxiang Yin ,  Xiaolong Ma ,  Changliang Qi ,  Qiuxia Xu ,  Dapeng Chen

IPC: H01L21/02 ,  H01L21/332 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66575 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7833

Abstract: The present invention provides a semiconductor structure comprising a substrate; a gate stack on the substrate; a spacer on the sidewalls of the gate stack; a source/drain junction extension formed in the substrate on both sides of the gate stack by epitaxial growth; and a source/drain region in the substrate on both sides of the source/drain junction extension. Accordingly, the present invention also provides methods for manufacturing the semiconductor structure. The present invention can provide a source/drain junction extension with a high doping concentration and a low junction depth, thereby effectively improving the performance of the semiconductor structure.

Abstract translation: 本发明提供一种包括基板的半导体结构; 衬底上的栅极堆叠; 在栅极堆叠的侧壁上的间隔物; 通过外延生长形成在栅极堆叠的两侧的衬底中的源极/漏极结延伸; 以及在源极/漏极结延伸部的两侧上的衬底中的源极/漏极区域。 因此，本发明还提供了制造半导体结构的方法。 本发明可以提供具有高掺杂浓度和低结深度的源极/漏极结延伸，从而有效地改善了半导体结构的性能。

公开(公告)号：US09170460B2

公开(公告)日：2015-10-27

申请号：US13638078

申请日：2012-06-28

Applicant: Xiaolong Ma ,  Hong-Ji Huang

Inventor： Xiaolong Ma ,  Hong-Ji Huang

IPC: G02F1/1339 ,  G02F1/1343 ,  G02F1/1333 ,  G02F1/1337

CPC classification number: G02F1/134363 ,  G02F1/1333 ,  G02F1/133711 ,  G02F2001/133726 ,  G02F2001/133765

Abstract: The present invention provides to an in-plane-switching (IPS) mode liquid crystal panel, which comprises: a first substrate, a second substrate, a coplanar transparent electrode layer and a liquid crystal layer. The first and second substrates have a first alignment film and a second alignment film, respectively. The coplanar transparent electrode layer is disposed onto the second alignment film. The liquid crystal layer is disposed in a space between the first alignment film of the first substrate and the coplanar transparent electrode layer of the second substrate. The liquid crystal layer comprises dual-frequency liquid crystal molecules and dual-frequency reactive mesogens/monomers. The liquid crystal panel of the present invention can overcome the problems of pollution and static electricity generated from the rubbing alignment in the in-plane-switching (IPS) mode, so as to simplify the manufacturing process and provide the advantages of high contrast, high response speed and wide viewing angle.

Abstract translation: 本发明提供一种面内切换（IPS）模式液晶面板，其包括：第一基板，第二基板，共面透明电极层和液晶层。 第一基板和第二基板分别具有第一取向膜和第二取向膜。 共面透明电极层设置在第二取向膜上。 液晶层设置在第一基板的第一取向膜和第二基板的共面透明电极层之间的空间中。 液晶层包括双频液晶分子和双频反应性介晶/单体。 本发明的液晶面板可以克服在平面切换（IPS）模式中由摩擦取向产生的污染和静电的问题，从而简化制造过程，并提供高对比度，高 响应速度和广视角。

公开(公告)号：US09054018B2

公开(公告)日：2015-06-09

申请号：US13812503

申请日：2012-10-12

Applicant: Xiaolong Ma ,  Huaxiang Yin ,  Sen Xu ,  Huilong Zhu

Inventor： Xiaolong Ma ,  Huaxiang Yin ,  Sen Xu ,  Huilong Zhu

IPC: H01L29/06 ,  H01L21/84 ,  H01L29/15 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  B82Y10/00 ,  H01L29/51 ,  H01L29/165

CPC classification number: H01L29/15 ,  B82Y10/00 ,  H01L29/1054 ,  H01L29/151 ,  H01L29/165 ,  H01L29/517 ,  H01L29/66431 ,  H01L29/66795 ,  H01L29/7781 ,  H01L29/785 ,  H01L29/7853

Abstract: The present invention discloses a method for manufacturing a semiconductor device, which comprises: forming a plurality of fins on a substrate, which extend along a first direction and have rhombus-like cross-sections; forming a gate stack structure on each fin, which traverses the plurality of fins and extends along a second direction; wherein a portion in each fin that is under the gate stack structure forms a channel region of the device, and portions in each fin that are at both sides of the gate stack structure along the first direction form source and drain regions. The semiconductor device and its manufacturing method according to the present invention use rhombus-like fins to improve the gate control capability to effectively suppress the short channel effect, moreover, an epitaxial quantum well is used therein to better limit the carriers, thus improving the device drive capability.

Abstract translation: 本发明公开了一种半导体器件的制造方法，其特征在于，在基板上形成沿着第一方向延伸并具有菱形状的横截面的多个翅片， 在每个翅片上形成栅极堆叠结构，其横过所述多个翅片并沿着第二方向延伸; 其中位于所述栅极堆叠结构下方的每个鳍中的部分形成所述器件的沟道区，并且沿着所述第一方向位于所述栅极堆叠结构两侧的每个鳍中的部分形成源极和漏极区。 根据本发明的半导体器件及其制造方法使用菱形翅片来提高栅极控制能力以有效地抑制短沟道效应，此外，在其中使用外延量子阱以更好地限制载流子，从而改善器件 驱动能力。

公开(公告)号：US20140191335A1

公开(公告)日：2014-07-10

申请号：US13812941

申请日：2012-08-27

Applicant: Huaxiang Yin ,  Changliang Qin ,  Xiaolong Ma ,  Qiuxia Xu ,  Dapeng Chen

Inventor： Huaxiang Yin ,  Changliang Qin ,  Xiaolong Ma ,  Qiuxia Xu ,  Dapeng Chen

IPC: H01L29/78 ,  H01L21/8234 ,  H01L27/088

CPC classification number: H01L29/7848 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0886 ,  H01L29/66818 ,  H01L29/7845 ,  H01L29/785

Abstract: The present invention discloses a semiconductor device, comprising a plurality of fins located on a substrate and extending along a first direction; a plurality of gate stack structures extending along a second direction and across each of the fins; a plurality of stress layers located in the fins on both sides of the gate stack structures and having a plurality of source and drain regions therein; a plurality of channel regions located in the fins below the gate stack structures; characterized in that the stress layers have connected parts in the fins and that the channel regions enclose the connected parts.

Abstract translation: 本发明公开了一种半导体器件，包括位于基片上并沿着第一方向延伸的多个翅片; 多个栅极堆叠结构，沿着第二方向延伸并穿过每个所述散热片; 多个应力层，其位于所述栅极叠层结构的两侧的所述鳍片中，并且在其中具有多个源极和漏极区域; 多个通道区域，位于所述栅极叠层结构下方的鳍中; 其特征在于，应力层在翅片中具有连接部分，并且通道区域包围连接部分。

公开(公告)号：US20140057418A1

公开(公告)日：2014-02-27

申请号：US13812502

申请日：2012-10-12

Applicant: Xiaolong Ma ,  Huaxiang Yin ,  Zuozhen Fu

Inventor： Xiaolong Ma ,  Huaxiang Yin ,  Zuozhen Fu

IPC: H01L21/02 ,  H01L29/12

CPC classification number: H01L21/0257 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02612 ,  H01L21/02614 ,  H01L21/02617 ,  H01L21/02639 ,  H01L21/268 ,  H01L29/1054 ,  H01L29/12

Abstract: The present invention discloses a method for manufacturing a high mobility material layer, comprising: forming a plurality of precursors in/on a substrate; and performing a pulse laser processing such that the plurality of precursors react with each other to produce a high mobility material layer. Furthermore, the present invention also provides a method for manufacturing a semiconductor device, comprising: forming a buffer layer on an insulating substrate; forming a first high mobility material layer on the buffer layer using the method for manufacturing the high mobility material layer; forming a second high mobility material layer on the first high mobility material layer using the method for manufacturing the high mobility material layer; and forming trench isolations and defining active regions in the first and second high mobility material layers.

Abstract translation: 本发明公开了一种高迁移率材料层的制造方法，其特征在于，包括：在基板内/内形成多个前体; 并进行脉冲激光处理使得多个前体彼此反应以产生高迁移率材料层。 此外，本发明还提供一种半导体器件的制造方法，包括：在绝缘基板上形成缓冲层; 使用高迁移率材料层的制造方法在缓冲层上形成第一高迁移率材料层; 使用所述高迁移率材料层的制造方法在所述第一高迁移率材料层上形成第二高迁移率材料层; 以及形成沟槽隔离并在第一和第二高迁移率材料层中限定有源区。

公开(公告)号：US20130256808A1

公开(公告)日：2013-10-03

申请号：US13520791

申请日：2012-04-11

Applicant: Huaxiang Yin ,  xiaolong Ma ,  Qiuxia Xu ,  Dapeng Chen

Inventor： Huaxiang Yin ,  xiaolong Ma ,  Qiuxia Xu ,  Dapeng Chen

IPC: H01L27/088 ,  H01L21/8236

CPC classification number: H01L21/823807 ,  H01L29/7833 ,  H01L29/7843

Abstract: The present invention discloses a semiconductor device, comprising a first MOSFET; a second MOSFET; a first stress liner covering the first MOSFET and having a first stress; a second stress liner covering the second MOSFET and having a second stress; wherein the second stress liner and/or the first stress liner comprise(s) a metal oxide. In accordance with the high-stress CMOS and method of manufacturing the same of the present invention, a stress layer comprising a metal oxide is formed selectively on PMOS and NMOS respectively by using a CMOS compatible process, whereby carrier mobility of the channel region is effectively enhanced and the performance of the device is improved.

Abstract translation: 本发明公开了一种半导体器件，包括第一MOSFET; 第二个MOSFET; 覆盖所述第一MOSFET并具有第一应力的第一应力衬垫; 覆盖所述第二MOSFET并具有第二应力的第二应力衬垫; 其中所述第二应力衬垫和/或所述第一应力衬垫包括金属氧化物。 根据本发明的高应力CMOS及其制造方法，通过使用CMOS兼容工艺，分别在PMOS和NMOS上选择性地形成包含金属氧化物的应力层，由此，沟道区域的载流子迁移率有效地 增强了设备的性能，提高了设备​​性能。

公开(公告)号：US20130250217A1

公开(公告)日：2013-09-26

申请号：US13521698

申请日：2012-04-26

Applicant: Xiaolong Ma

Inventor： Xiaolong Ma

IPC: G02F1/1335 ,  B32B37/26

CPC classification number: G02F1/1339

Abstract: The present invention provides a liquid crystal display panel and manufacturing method thereof. The manufacturing method includes: disposing a first and a second substrate oppositely, first substrate comprising a color filter (CF) array area and a first non-display area disposed in peripheral of CF array area, first substrate or second substrate coated with radiation curing agent corresponding to first non-display area; using curing radiation to shine on first substrate from a side of first substrate away from second substrate so that incident curing radiation to CF array area absorbed by CF array area, and incident curing radiation to first non-display area curing radiation curing agent to adhere first and second substrates. The present invention effectively solves insufficient curing problem caused by shielding of metal routes in peripheral of thin film transistor array area and reduces manufacture cost of liquid crystal display panel without UV mask.

Abstract translation: 本发明提供一种液晶显示面板及其制造方法。 该制造方法包括：相对配置第一和第二基板，第一基板包括滤色器（CF）阵列区域和布置在CF阵列区域周边的第一非显示区域，涂覆有辐射固化剂的第一基板或第二基板 对应于第一非显示区域; 使用固化辐射从第一衬底的第二衬底的第一衬底照射到第二衬底上，使得入射的固化辐射到由CF阵列区域吸收的CF阵列区域，并且入射固化辐射到第一非显示区域固化辐射固化剂以首先粘附 和第二基板。 本发明有效地解决了薄膜晶体管阵列区域周边金属线路屏蔽不足的固化问题，降低了无紫外线掩模的液晶显示面板的制造成本。