公开(公告)号：US20070057190A1

公开(公告)日：2007-03-15

申请号：US10576413

申请日：2004-10-20

申请人： Yoshinori Hatanaka ,  Toru Aoki ,  Yasuhiro Tomita

发明人： Yoshinori Hatanaka ,  Toru Aoki ,  Yasuhiro Tomita

IPC分类号： G01T1/24 ,  H01L27/146 ,  H01L25/00

CPC分类号： H04N5/349 ,  H04N5/32 ,  H04N5/3651

摘要： When a semiconductor sensor element used for detecting high-energy x-rays and gamma rays and an amplifier are connected via wires, the capacitances vary depending on the wires, thereby causing a sensitivity variation. To solve this, a structure for making the capacitances uniform is proposed. If a staggered arrangement is used for high resolution, the capacitances by wiring are different from element to element, so dummy sensor mounting sections (2) are provided to electrode sections (3) to make the capacitance uniform. The width of the connection section is decreased depending on the wiring length so as to make the capacitance uniform.

摘要翻译： 当用于检测高能X射线和γ射线的半导体传感器元件和放大器通过导线连接时，电容根据导线而变化，从而导致灵敏度变化。 为了解决这个问题，提出了一种使电容均匀化的结构。 如果以高分辨率使用交错布置，则通过布线的电容与元件不同，因此将虚拟传感器安装部分（2）设置到电极部分（3）以使电容均匀。 连接部分的宽度根据布线长度而减小，从而使电容均匀。

公开(公告)号：US06936806B1

公开(公告)日：2005-08-30

申请号：US09704539

申请日：2000-11-03

申请人： Ken Kitamura ,  Yoshinori Hatanaka

发明人： Ken Kitamura ,  Yoshinori Hatanaka

IPC分类号： H01L31/107 ,  H01L27/00 ,  H01L27/146 ,  H01L27/148 ,  H01L31/105

CPC分类号： H01L27/14643 ,  H01L31/1055

摘要： Disclosed is a photoelectric conversion device having a multiplying function and an image sensing device using the same. The photoelectric conversion device essentially comprises three layered structure: a carrier generation/multiplication layer composed of amorphous silicon to have both the function of absorbing light and generating carriers through optical excitation and the function of multiplying the generated carriers; an electron injection inhibiting layer composed of an amorphous silicon carbide of the p-type conductivity to inhibit injection of electrons into the carrier generation/multiplication layer; and a hole injection inhibiting layer composed of an amorphous silicon nitride of the n-type conductivity to inhibit injection of holes into the carrier generation/multiplication layer. The said carrier generation/multiplication layer is provided between said electron injection inhibiting layer and said hole injection inhibiting layer.

摘要翻译： 公开了具有倍增功能的光电转换装置和使用其的图像感测装置。 光电转换装置基本上包括三层结构：由非晶硅构成的载流子生成/乘积层，具有通过光激发吸收光和产生载流子的功能和乘以所产生的载流子的功能; 电子注入抑制层，其由具有p型导电性的非晶碳化硅构成，以阻止电子注入到载流子产生/倍增层中; 以及由n型导电性的非晶氮化硅组成的空穴注入抑制层，以抑制空穴注入到载体产生/倍增层中。 所述载体生成/倍增层设置在所述电子注入抑制层和所述空穴注入抑制层之间。

公开(公告)号：US06692794B2

公开(公告)日：2004-02-17

申请号：US10217113

申请日：2002-08-12

申请人： Masatoshi Nakamura ,  Yoshinori Hatanaka

发明人： Masatoshi Nakamura ,  Yoshinori Hatanaka

IPC分类号： H05H124

CPC分类号： C23C16/509 ,  B32B15/04 ,  C03C17/256 ,  C03C2217/212 ,  C03C2218/113 ,  C23C16/405 ,  C23C16/452 ,  Y10T428/31504 ,  Y10T428/31725

摘要： This invention provides a composite having a hydrophilic film made of amorphous titanium oxide. A film is deposited on a substrate made of, for example, glass or synthetic resin. The film is composed of amorphous titanium oxide partially having structures in which a network of Ti—O—Ti bond is broken to give Ti—OH bond terminals.

摘要翻译： 本发明提供一种具有由无定形氧化钛制成的亲水膜的复合体。 将膜沉积在由例如玻璃或合成树脂制成的基板上。 该膜由部分具有Ti-O-Ti键网络断裂以得到Ti-OH键末端的结构的无定形氧化钛组成。

公开(公告)号：US06414975B1

公开(公告)日：2002-07-02

申请号：US09048048

申请日：1998-03-26

申请人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

发明人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

IPC分类号： H01S500

CPC分类号： H01L33/40 ,  H01L33/28 ,  H01L33/285

摘要： The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power. As a result of the reduction in the operating power, the device life is improved.

摘要翻译： 本发明提供一种可以容易地降低其工作电压的半导体发光器件，其制造方法和光学器件。 在n型衬底上依次生长n型覆盖层，第一引导层，有源层，第二引导层，p型覆盖层，第一半导体层和第二半导体层。 然后在其上形成Na 2 Se的碱性化合物层。 随后，通过照射准分子激光束进行热处理，使得第二半导体层的至少一部分和碱性化合物层的至少一部分被改变，从而形成接触层。 此外，在接触层上形成p侧电极。 接触层含有用作p型杂质的碱金属，使得接触层具有低电阻，从而实现工作电压的降低，从而降低工作电力。 由于操作功率的降低，设备寿命得到改善。

公开(公告)号：US06372304B1

公开(公告)日：2002-04-16

申请号：US08888954

申请日：1997-07-07

申请人： Keiichiro Sano ,  Masaya Nomura ,  Hiroaki Tamamaki ,  Yoshinori Hatanaka

发明人： Keiichiro Sano ,  Masaya Nomura ,  Hiroaki Tamamaki ,  Yoshinori Hatanaka

IPC分类号： C23C1632

CPC分类号： C23C16/325 ,  C23C16/511

摘要： A high quality transparent SiC thin film can be deposited on the surface of a plastic material at low temperature utilizing Electron Cyclotron Resonance (ECR) Plasma CVD techniques, thereby enhancing surfacial hardness without spoiling designability. A magnetic field is applied to a plasma generating chamber by means of a surrounding magnetic coil. Microwaves are then introduced into the plasma generating chamber. Further, an upstream gas is introduced into the plasma generating chamber. ECR plasma is thus generated. A downstream gas is then supplied to the chamber from an inlet. Furthermore, the ECR plasma is passed through a mesh placed between the inlet and a polymer base material or between the plasma generating chamber and the inlet. Accordingly, a SiC film is deposited on a surface of a polymer base material.

摘要翻译： 使用电子回旋共振（ECR）等离子体CVD技术，可以在低温下在塑料材料的表面上沉积高质量的透明SiC薄膜，从而提高表面硬度，而不破坏可设计性。 通过周围的电磁线圈将磁场施加到等离子体发生室。 然后将微波引入等离子体发生室。 此外，上游气体被引入到等离子体产生室中。 从而产生ECR等离子体。 然后从入口将下游气体供应到室。 此外，ECR等离子体通过放置在入口和聚合物基材之间或者等离子体产生室和入口之间的网。 因此，在聚合物基材的表面上沉积SiC膜。

公开(公告)号：US06294227B1

公开(公告)日：2001-09-25

申请号：US09589879

申请日：2000-06-09

申请人： Hidetaka Anma ,  Yoshinori Hatanaka

发明人： Hidetaka Anma ,  Yoshinori Hatanaka

IPC分类号： H05H124

CPC分类号： H01J37/32009 ,  C23C16/30 ,  C23C16/402 ,  H01J37/32082 ,  H01J37/32541

摘要： A method of forming a uniform-thickness good-quality protective film with scratch-proofness and ultraviolet cutting characteristic on a plastic part having a diversified and complex three-dimensional shape without wasteful release of an organic solvent, or the like, into the atmosphere. In a plasma chemical vapor deposition apparatus, the shape of at least one part of a surface of a cathode provided in a reaction chamber is made coincident with the shape of a surface of a plastic part such as a car headlamp lens, or the like. The plastic part is attached to the cathode in the condition that the two surfaces coincident in shape come into contact with each other. High-frequency electric power is supplied between the cathode and the reaction chamber while a hydrogen gas and hexamethyldisilane (HMDS) as a raw material gas for forming a protective film are imported into the reaction chamber. Thus, a protective film is formed on the surface of the plastic part by vapor deposition.

摘要翻译： 在具有多样化且复杂的三维形状的塑料部件上形成均匀厚度的优质保护膜，具有耐划伤性和紫外线切割特性的方法，而无需有机溶剂等的浪费地释放到大气中。 在等离子体化学气相沉积装置中，设置在反应室中的阴极的表面的至少一部分的形状与诸如汽车前照灯透镜等塑料部件的表面的形状一致。 在两个表面重合的表面彼此接触的情况下，塑料部分连接到阴极。 在作为保护膜形成原料气体的氢气和六甲基二硅烷（HMDS）进入反应室的同时，在阴极和反应室之间供给高频电力。 因此，通过气相沉积在塑料部件的表面上形成保护膜。