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    Wide range radiation detector and manufacturing method
    3.
    发明授权
    Wide range radiation detector and manufacturing method 有权
    宽范围辐射探测器及制造方法

    公开(公告)号：US08044476B2

    公开(公告)日：2011-10-25

    申请号：US11454522

    申请日：2006-06-16

    申请人： Yoshinori Hatanaka ,  Toru Aoki

    发明人： Yoshinori Hatanaka ,  Toru Aoki

    IPC分类号： H01L31/00

    CPC分类号： H01L31/115 ,  H01L27/14661 ,  H01L27/14696

    摘要： A radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different from the first energy provided on the IV semiconductor layer.

    摘要翻译： 一种辐射检测器，包括吸收具有第一能量的辐射的II-VI化合物半导体衬底，设置在II-VI化合物半导体衬底的主表面上的第一导电类型的II-VI化合物半导体层， 提供在II-VI化合物半导体层上的III族元素和V族元素中的至少一种，具有与金属层上提供的第一导电类型相反的第二导电类型的IV半导体层和吸收 具有与在IV半导体层上提供的第一能量不同的第二能量的辐射。

    Wide range radiation detector and manufacturing method
    4.
    发明申请
    Wide range radiation detector and manufacturing method 有权
    宽范围辐射探测器及制造方法

    公开(公告)号：US20070176200A1

    公开(公告)日：2007-08-02

    申请号：US11454522

    申请日：2006-06-16

    申请人： Yoshinori Hatanaka ,  Toru Aoki

    发明人： Yoshinori Hatanaka ,  Toru Aoki

    IPC分类号： H01L31/00 ,  H01L29/732

    CPC分类号： H01L31/115 ,  H01L27/14661 ,  H01L27/14696

    摘要： There is disclosed a radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different to the first energy provided on the IV semiconductor layer.

    摘要翻译： 公开了一种辐射检测器，其包括吸收具有第一能量的辐射的II-VI化合物半导体衬底，设置在II-VI化合物半导体衬底的主表面上的第一导电类型的II-VI化合物半导体层，金属 含有设置在II-VI化合物半导体层上的III族元素和V族元素中的至少一种的层，具有与设置在金属层上的第一导电类型相反的第二导电类型的IV半导体层和IV半导体 吸收具有与IV半导体层上提供的第一能量不同的第二能量的辐射的衬底。

    Ultra-high resolution pixel electrode arrangement structure signal processing method
    5.
    发明申请
    Ultra-high resolution pixel electrode arrangement structure signal processing method 失效
    超高分辨率像素电极排列结构信号处理方法

    公开(公告)号：US20070057190A1

    公开(公告)日：2007-03-15

    申请号：US10576413

    申请日：2004-10-20

    申请人： Yoshinori Hatanaka ,  Toru Aoki ,  Yasuhiro Tomita

    发明人： Yoshinori Hatanaka ,  Toru Aoki ,  Yasuhiro Tomita

    IPC分类号： G01T1/24 ,  H01L27/146 ,  H01L25/00

    CPC分类号： H04N5/349 ,  H04N5/32 ,  H04N5/3651

    摘要： When a semiconductor sensor element used for detecting high-energy x-rays and gamma rays and an amplifier are connected via wires, the capacitances vary depending on the wires, thereby causing a sensitivity variation. To solve this, a structure for making the capacitances uniform is proposed. If a staggered arrangement is used for high resolution, the capacitances by wiring are different from element to element, so dummy sensor mounting sections (2) are provided to electrode sections (3) to make the capacitance uniform. The width of the connection section is decreased depending on the wiring length so as to make the capacitance uniform.

    摘要翻译： 当用于检测高能X射线和γ射线的半导体传感器元件和放大器通过导线连接时，电容根据导线而变化，从而导致灵敏度变化。 为了解决这个问题，提出了一种使电容均匀化的结构。 如果以高分辨率使用交错布置，则通过布线的电容与元件不同，因此将虚拟传感器安装部分（2）设置到电极部分（3）以使电容均匀。 连接部分的宽度根据布线长度而减小，从而使电容均匀。

    Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including same
    6.
    发明授权
    Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including same 失效
    具有含有碱金属杂质的II-VI族半导体接触层的半导体发光器件及其制造方法以及包括其的光学器件

    公开(公告)号：US06456639B2

    公开(公告)日：2002-09-24

    申请号：US09864758

    申请日：2001-05-24

    申请人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

    发明人： Akira Ishibashi ,  Yoshinori Hatanaka ,  Toru Aoki ,  Masaharu Nagai

    IPC分类号： H01S500

    CPC分类号： H01L33/40 ,  H01L33/28 ,  H01L33/285

    摘要： The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power. As a result of the reduction in the operating power, the device life is improved.

    摘要翻译： 本发明提供一种可以容易地降低其工作电压的半导体发光器件，其制造方法和光学器件。 在n型衬底上依次生长n型覆盖层，第一引导层，有源层，第二引导层，p型覆盖层，第一半导体层和第二半导体层。 然后在其上形成Na 2 Se的碱性化合物层。 随后，通过照射准分子激光束进行热处理，使得第二半导体层和至少一部分碱性化合物层的至少一部分被改变，从而形成接触层。 此外，在接触层上形成p侧电极。 接触层含有用作p型杂质的碱金属，使得接触层具有低电阻，从而实现工作电压的降低，从而降低工作电力。 由于操作功率的降低，设备寿命得到改善。

    Planar display apparatus having exposed insulated substrate portion
    8.
    发明授权
    Planar display apparatus having exposed insulated substrate portion 失效
    具有露出的绝缘基板部分的平面显示装置

    公开(公告)号：US5587627A

    公开(公告)日：1996-12-24

    申请号：US395703

    申请日：1995-02-28

    申请人： Masato Saito ,  Ryo Suzuki ,  Keiji Fukuyama ,  Takuya Ohira ,  Keiji Watanabe ,  Minoru Kobayashi ,  Susumu Hoshinouchi ,  Yoshinori Hatanaka

    发明人： Masato Saito ,  Ryo Suzuki ,  Keiji Fukuyama ,  Takuya Ohira ,  Keiji Watanabe ,  Minoru Kobayashi ,  Susumu Hoshinouchi ,  Yoshinori Hatanaka

    IPC分类号： H01J31/12 ,  H05B37/02

    CPC分类号： H01J31/126

    摘要： A control electrode portion for passing electrons through a given electron-passing hole selected from a plurality of electron-passing holes provided on an insulating substrate is formed by coating the insulating substrate with a conductive film and dividing the into a plurality of conductive films as control electrodes. This structure obviates the mesh structure of electrons which are necessary in the case of arranging control electrodes on the insulating substrate, thereby realizing high-definition display devices with improved luminance. In addition, planar display devices provided with a surface insulated substrate produced by forming an insulating film on a conductive substrate having electron-passing holes and a plurality of separate control electrodes arranged on the surface insulated substrate, it is possible to prevent the charge-up effect which obstructs the passage of electron beams and, hence, to enhance the luminance at least by (1) providing a voltage applying circuit for applying a predetermined voltage to the conductive substrate, (2) providing a portion at which the conductive substrate is exposed between the adjacent control electrodes.

    摘要翻译： 通过用导电膜涂覆绝缘基板并将其分成多个导电膜作为对照，形成用于使电子通过选自设置在绝缘基板上的多个电子通过孔中的给定电子通过孔的控制电极部分 电极。 这种结构消除了在绝缘基板上布置控制电极的情况下必需的电子的网格结构，从而实现了具有改善的亮度的高清晰度显示装置。 另外，具有通过在具有电子通过孔的导电性基板上形成绝缘膜而形成的表面绝缘基板的平面显示装置和配置在表面绝缘基板上的多个分立控制电极，能够防止充电 至少通过（1）提供用于向导电衬底施加预定电压的电压施加电路，（2）提供导电衬底露出的部分，从而阻止电子束通过，并因此提高亮度 在相邻的控制电极之间。

    Ultra-high resolution pixel electrode arrangement structure and signal processing method
    9.
    发明授权
    Ultra-high resolution pixel electrode arrangement structure and signal processing method 失效
    超高分辨率像素电极排列结构和信号处理方法

    公开(公告)号：US07402811B2

    公开(公告)日：2008-07-22

    申请号：US10576413

    申请日：2004-10-20

    申请人： Yoshinori Hatanaka ,  Toru Aoki ,  Yasuhiro Tomita

    发明人： Yoshinori Hatanaka ,  Toru Aoki ,  Yasuhiro Tomita

    IPC分类号： G01T1/24

    CPC分类号： H04N5/349 ,  H04N5/32 ,  H04N5/3651

    摘要： When a semiconductor sensor element used for detecting high-energy x-rays and gamma rays and an amplifier are connected via wires, the capacitances vary depending on the wires, thereby causing a sensitivity variation. To solve this, a structure for making the capacitances uniform is proposed.If a staggered arrangement is used for high resolution, the capacitances by wiring are different from element to element, so dummy sensor mounting sections (2) are provided to electrode sections (3) to make the capacitance uniform. The width of the connection section is decreased depending on the wiring length so as to make the capacitance uniform.

    摘要翻译： 当用于检测高能X射线和γ射线的半导体传感器元件和放大器通过导线连接时，电容根据导线而变化，从而导致灵敏度变化。 为了解决这个问题，提出了一种使电容均匀化的结构。 如果以高分辨率使用交错布置，则通过布线的电容与元件不同，因此将虚拟传感器安装部分（2）设置到电极部分（3）以使电容均匀。 连接部分的宽度根据布线长度而减小，从而使电容均匀。