Abstract:
Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.
Abstract:
Provided are a dual mode semiconductor laser and a terahertz wave apparatus using the same. The dual mode semiconductor laser includes a distributed feedback laser structure section including a first diffraction grating on a substrate and a distributed Bragg reflector laser structure section including a second diffraction grating on the substrate. A first wavelength oscillated by the distributed feedback laser structure section and a second wavelength oscillated by the distributed Bragg reflector laser structure section are different from each other, and the distributed feedback laser structure section and the distributed Bragg reflector laser structure section share the same gain medium with each other.
Abstract:
Provided is a laser device. In the laser device, an active layer is connected to a stem core of a 1×2 splitter on a substrate, a first diffraction grating is coupled to a first twig core of the 1×2 splitter, and a second diffraction grating is coupled to a second twig core of the 1×2 splitter. An active layer-micro heater is designed to supply heat to the active layer. First and second micro heaters are designed to supply heats to the first and second diffraction gratings, respectively, thereby varying a Bragg wavelength.
Abstract:
Provided is a fiber laser generating Terahertz wave. The fiber laser comprises: a light source generating a laser beam as a pump light; first and second resonators first and second resonators first and second resonators resonating the laser beam into first and second wavelengths; and a coupler separating and supplying the laser beam generated in the light source to the first and second resonators and again feeding back the laser beam having the first and second wavelengths resonated respectively in the first and second resonators to the light source.
Abstract:
Provided are an apparatus for and a method of generating millimeter waves, in which millimeter-wave generation and frequency up-conversion can be achieved at the same time using a single device. The apparatus includes a mode-locking laser diode (LD) which has a distributed feedback (DFB) sector and a gain sector and generates high-frequency optical pulses through a passive mode locking process, a modulator which modulates an external optical signal using an electric signal and injects the modulated optical signal to the mode-locking LD to lock the optical pulses, and a radio frequency (RF) locking signaling unit which injects the electric signal to the modulator.
Abstract:
Provided is a hybrid laser diode. The hybrid laser diode includes: a silicon layer constituting a slab waveguide; and a compound semiconductor layer disposed on the silicon layer to constitute a channel waveguide.
Abstract:
Provided is a photonics device. The photonics device includes: a substrate including a star coupler region and a transition region; a lower core layer formed on the substrate; and upper core patterns formed on the substrate to define a waveguide. The upper core patterns are disposed on the lower core layer at the transition region, so that the transition region has a multi-layered core structure.
Abstract:
Provided is a hybrid laser diode. The hybrid laser diode includes: a silicon layer constituting a slab waveguide; and a compound semiconductor layer disposed on the silicon layer to constitute a channel waveguide.
Abstract:
The 3R regeneration system for a retiming, reshaping, and reamplifying an optical signal includes: first and second input ports in which a connected optical signal is input; an interferometer including first and second branches formed on a substrate, split at a common input node, combined at a common output node, semiconductor optical amplifiers in each of the first and second branches, the first branch being connected to the first input port, and the common input node being connected to the second input port; a self-pulsating laser diode monolithically integrated with the interferometer between one of the first input port and the first branch, and the second input port and the common input node on the substrate, receiving an optical signal, and outputting the optical signal regenerated by optical injection locking; and an output port connected to the common output node.
Abstract:
A multi DFB laser diode for generating spontaneous pulses comprises first and second DFB sections each of which has a substrate including a diffraction grating, an active layer formed on the substrate, a clad layer formed on the active layer and including a refraction varying layer, and an electrode formed on the active layer; and a phase tuning section including a substrate, an active layer formed on the substrate, a clad layer formed on the active layer, and an electrode isolated from the electrode of the first and second DFB sections. The refraction varying layer in the active layer of the first DFB section has a refractive index different from that of the refraction varying layer in the active layer of the second DFB section.