Photoelectric device using PN diode and silicon integrated circuit (IC) including the photoelectric device
    11.
    发明授权
    Photoelectric device using PN diode and silicon integrated circuit (IC) including the photoelectric device 失效
    光电器件采用PN二极管和硅集成电路(IC),包括光电器件

    公开(公告)号:US08346026B2

    公开(公告)日:2013-01-01

    申请号:US12517802

    申请日:2007-08-07

    CPC classification number: H01L31/12 H01L27/144

    Abstract: Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.

    Abstract translation: 提供了使用PN二极管的光电装置和包括光电装置的硅集成电路(IC)。 光电装置包括:基板; 以及在所述衬底上形成为PN二极管的光波导,其中所述PN二极管的结界面沿光前进的方向形成; 以及向PN二极管施加反向电压的电极,其中PN二极管的N型和P型半导体以高浓度掺杂,并且N型半导体的掺杂浓度高于或等于P 型半导体。

    DUAL MODE SEMICONDUCTOR LASER AND TERAHERTZ WAVE APPARATUS USING THE SAME
    12.
    发明申请
    DUAL MODE SEMICONDUCTOR LASER AND TERAHERTZ WAVE APPARATUS USING THE SAME 有权
    双模半导体激光器和TERAHERTZ波形设备使用它

    公开(公告)号:US20120051386A1

    公开(公告)日:2012-03-01

    申请号:US13022985

    申请日:2011-02-08

    Abstract: Provided are a dual mode semiconductor laser and a terahertz wave apparatus using the same. The dual mode semiconductor laser includes a distributed feedback laser structure section including a first diffraction grating on a substrate and a distributed Bragg reflector laser structure section including a second diffraction grating on the substrate. A first wavelength oscillated by the distributed feedback laser structure section and a second wavelength oscillated by the distributed Bragg reflector laser structure section are different from each other, and the distributed feedback laser structure section and the distributed Bragg reflector laser structure section share the same gain medium with each other.

    Abstract translation: 提供了一种双模式半导体激光器和使用该双模半导体激光器的太赫兹波装置。 双模式半导体激光器包括分布反馈激光器结构部分,其包括在衬底上的第一衍射光栅和在衬底上包括第二衍射光栅的分布式布拉格反射器激光器结构部分。 由分布式反馈激光器结构部分振荡的第一波长和由分布布拉格反射器激光器结构部分振荡的第二波长彼此不同,分布反馈激光器结构部分和分布式布拉格反射器激光器结构部分共享相同的增益介质 与彼此。

    FIBER LASER
    14.
    发明申请
    FIBER LASER 审中-公开
    光纤激光

    公开(公告)号:US20110142082A1

    公开(公告)日:2011-06-16

    申请号:US12908611

    申请日:2010-10-20

    Abstract: Provided is a fiber laser generating Terahertz wave. The fiber laser comprises: a light source generating a laser beam as a pump light; first and second resonators first and second resonators first and second resonators resonating the laser beam into first and second wavelengths; and a coupler separating and supplying the laser beam generated in the light source to the first and second resonators and again feeding back the laser beam having the first and second wavelengths resonated respectively in the first and second resonators to the light source.

    Abstract translation: 提供了产生太赫兹波的光纤激光器。 光纤激光器包括:产生激光束作为泵浦光的光源; 第一和第二谐振器第一和第二谐振器第一和第二谐振器将激光束谐振成第一和第二波长; 以及耦合器,将在光源中产生的激光束分离并提供给第一和第二谐振器,并且再次将具有分别在第一和第二谐振器中谐振的第一和第二波长的激光束反馈到光源。

    Apparatus for and method of generating millimeter waves
    15.
    发明授权
    Apparatus for and method of generating millimeter waves 有权
    仪器和产生毫米波的方法

    公开(公告)号:US07933524B2

    公开(公告)日:2011-04-26

    申请号:US11500646

    申请日:2006-08-08

    CPC classification number: H04B1/04 H04B10/50 H04B2001/0491

    Abstract: Provided are an apparatus for and a method of generating millimeter waves, in which millimeter-wave generation and frequency up-conversion can be achieved at the same time using a single device. The apparatus includes a mode-locking laser diode (LD) which has a distributed feedback (DFB) sector and a gain sector and generates high-frequency optical pulses through a passive mode locking process, a modulator which modulates an external optical signal using an electric signal and injects the modulated optical signal to the mode-locking LD to lock the optical pulses, and a radio frequency (RF) locking signaling unit which injects the electric signal to the modulator.

    Abstract translation: 提供了一种产生毫米波的装置和方法,其中可以使用单个装置同时实现毫米波发生和上变频。 该装置包括具有分布式反馈(DFB)扇区和增益扇区的锁模激光二极管(LD),并通过无源模式锁定工艺产生高频光脉冲,调制器使用电动调制外部光信号 信号并将经调制的光信号注入锁模LD以锁定光脉冲;以及射频(RF)锁定信令单元,其将电信号注入调制器。

    PHOTONICS DEVICE
    17.
    发明申请
    PHOTONICS DEVICE 审中-公开
    光电设备

    公开(公告)号:US20090154880A1

    公开(公告)日:2009-06-18

    申请号:US12118568

    申请日:2008-05-09

    CPC classification number: G02B6/12016 G02B6/12011 G02B6/132

    Abstract: Provided is a photonics device. The photonics device includes: a substrate including a star coupler region and a transition region; a lower core layer formed on the substrate; and upper core patterns formed on the substrate to define a waveguide. The upper core patterns are disposed on the lower core layer at the transition region, so that the transition region has a multi-layered core structure.

    Abstract translation: 提供了一种光子器件。 光子学器件包括:包括星形耦合器区域和过渡区域的衬底; 形成在所述基板上的下芯层; 以及形成在基板上以限定波导的上部芯图案。 上芯层图案在过渡区域设置在下芯层上,使得过渡区域具有多层芯结构。

    Optical signal retiming, reshaping, and reamplifying (3R) regeneration system having monolithically integrated Mach Zehnder interferometer and self-pulsating laser diode
    19.
    发明授权
    Optical signal retiming, reshaping, and reamplifying (3R) regeneration system having monolithically integrated Mach Zehnder interferometer and self-pulsating laser diode 有权
    具有单片集成马赫曾德尔干涉仪和自脉冲激光二极管的光信号重新定时,重新整形和再扩增(3R)再生系统

    公开(公告)号:US07489873B2

    公开(公告)日:2009-02-10

    申请号:US11284632

    申请日:2005-11-22

    CPC classification number: H04B10/299 H01S5/02248 H01S5/4006

    Abstract: The 3R regeneration system for a retiming, reshaping, and reamplifying an optical signal includes: first and second input ports in which a connected optical signal is input; an interferometer including first and second branches formed on a substrate, split at a common input node, combined at a common output node, semiconductor optical amplifiers in each of the first and second branches, the first branch being connected to the first input port, and the common input node being connected to the second input port; a self-pulsating laser diode monolithically integrated with the interferometer between one of the first input port and the first branch, and the second input port and the common input node on the substrate, receiving an optical signal, and outputting the optical signal regenerated by optical injection locking; and an output port connected to the common output node.

    Abstract translation: 用于重新定标和重新放大光信号的3R再生系统包括:输入连接的光信号的第一和第二输入端口; 干涉仪,包括形成在基板上的第一和第二分支,在公共输入节点处分开,在公共输出节点处组合,第一和第二分支中的每一个中的半导体光放大器,第一分支连接到第一输入端口,以及 所述公共输入节点连接到所述第二输入端口; 在第一输入端口和第一分支之间与干涉仪单片集成的自脉动激光二极管,以及基板上的第二输入端口和公共输入节点,接收光信号,并输出由光学信号再生的光信号 注射锁定 以及连接到公共输出节点的输出端口。

    Multi DFB laser diode
    20.
    发明授权
    Multi DFB laser diode 失效
    多DFB激光二极管

    公开(公告)号:US07012945B2

    公开(公告)日:2006-03-14

    申请号:US10725822

    申请日:2003-12-01

    Abstract: A multi DFB laser diode for generating spontaneous pulses comprises first and second DFB sections each of which has a substrate including a diffraction grating, an active layer formed on the substrate, a clad layer formed on the active layer and including a refraction varying layer, and an electrode formed on the active layer; and a phase tuning section including a substrate, an active layer formed on the substrate, a clad layer formed on the active layer, and an electrode isolated from the electrode of the first and second DFB sections. The refraction varying layer in the active layer of the first DFB section has a refractive index different from that of the refraction varying layer in the active layer of the second DFB section.

    Abstract translation: 用于产生自发脉冲的多DFB激光二极管包括第一和第二DFB部分,每个DFB部分具有包括衍射光栅的衬底,在衬底上形成的有源层,形成在有源层上并包括折射变化层的覆层,以及 形成在有源层上的电极; 以及相位调谐部,其包括基板,形成在所述基板上的有源层,形成在所述有源层上的覆盖层,以及与所述第一DFB部和所述第二DFB部的电极隔离的电极。 第一DFB部分的有源层中的折射变化层具有与第二DFB部分的有源层中的折射变化层的折射率不同的折射率。

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