公开(公告)号：US07687872B2

公开(公告)日：2010-03-30

申请号：US11880253

申请日：2007-07-20

Applicant: Yvon Cazaux ,  Philippe Coronel ,  Claire Fenouillet-Béranger ,  François Roy

Inventor： Yvon Cazaux ,  Philippe Coronel ,  Claire Fenouillet-Béranger ,  François Roy

IPC: H01L31/00

CPC classification number: H01L27/14634 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687

Abstract: An image sensor including photosensitive cells including photodiodes and at least one additional circuit with a significant heat dissipation including transistors. The image sensor is made in monolithic form and includes a layer of a semiconductor material having first and second opposite surfaces and including, on the first surface side, first regions corresponding to the power terminals of the transistors, the lighting of the image sensor being intended to be performed on the second surface side; a stack of insulating layers covering the first surface; a thermally conductive reinforcement covering the stack on the side opposite to the layer; and thermally conductive vias connecting the layer to the reinforcement.

Abstract translation: 包括包括光电二极管的感光单元和至少一个包括晶体管的显着散热的附加电路的图像传感器。 图像传感器制成单片形式并且包括具有第一和第二相对表面的半导体材料层，并且在第一表面侧包括对应于晶体管的功率端子的第一区域，图像传感器的点亮 在第二表面侧进行; 覆盖第一表面的一叠绝缘层; 导热性增强材料，覆盖层与该层相反的一侧; 以及将层连接到加强件的导热通孔。

公开(公告)号：US20080017946A1

公开(公告)日：2008-01-24

申请号：US11880253

申请日：2007-07-20

Applicant: Yvon Cazaux ,  Philippe Coronel ,  Claire Fenouillet-Beranger ,  Francois Roy

Inventor： Yvon Cazaux ,  Philippe Coronel ,  Claire Fenouillet-Beranger ,  Francois Roy

IPC: H01L31/00 ,  H01L21/00

CPC classification number: H01L27/14634 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687

Abstract: An image sensor including photosensitive cells including photodiodes and at least one additional circuit with a significant heat dissipation including transistors. The image sensor is made in monolithic form and includes a layer of a semiconductor material having first and second opposite surfaces and including, on the first surface side, first regions corresponding to the power terminals of the transistors, the lighting of the image sensor being intended to be performed on the second surface side; a stack of insulating layers covering the first surface; a thermally conductive reinforcement covering the stack on the side opposite to the layer; and thermally conductive vias connecting the layer to the reinforcement.

Abstract translation: 包括包括光电二极管的感光单元和至少一个包括晶体管的显着散热的附加电路的图像传感器。 图像传感器制成单片形式并且包括具有第一和第二相对表面的半导体材料层，并且在第一表面侧包括对应于晶体管的电源端子的第一区域，图像传感器的点亮 在第二表面侧进行; 覆盖第一表面的一叠绝缘层; 导热性增强材料，覆盖层与该层相反的一侧; 以及将层连接到加强件的导热通孔。

公开(公告)号：US20070018075A1

公开(公告)日：2007-01-25

申请号：US11490308

申请日：2006-07-20

Applicant: Yvon Cazaux ,  Didier Herault

Inventor： Yvon Cazaux ,  Didier Herault

IPC: H01L27/00

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/1469

Abstract: An image sensor including a pixel assembly, each pixel including a photodiode and an access transistor connected to a read circuit, the photodiode and the access transistor being formed in and above a first semiconductor substrate, all or part of the read circuit being formed in a second semiconductor substrate, the second substrate being placed above the first substrate and separated therefrom by an intermediary insulating layer covering the access transistor, the photodiode receiving incident photons on its lower surface side opposite to the intermediary insulating layer.

Abstract translation: 一种图像传感器，包括像素组件，每个像素包括光电二极管和连接到读取电路的存取晶体管，所述光电二极管和存取晶体管形成在第一半导体衬底中和上方，全部或部分读取电路形成为 第二半导体衬底，第二衬底被放置在第一衬底之上，并通过覆盖存取晶体管的中间绝缘层与其隔开，光电二极管在其与中间绝缘层相对的下表面侧接收入射光子。

公开(公告)号：US5600369A

公开(公告)日：1997-02-04

申请号：US432772

申请日：1995-05-02

Applicant: Yvon Cazaux ,  Jean-Louis Coutures ,  Pierre Dautriche ,  Gilles Boucharlat

Inventor： Yvon Cazaux ,  Jean-Louis Coutures ,  Pierre Dautriche ,  Gilles Boucharlat

IPC: H01L27/148 ,  H04N5/335 ,  H04N5/372 ,  H04N5/376 ,  H04N5/378

CPC classification number: H04N5/335 ,  H01L27/14831 ,  H04N3/1525

Abstract: A method of detecting electromagnetic radiation imparted onto a matrix of photosensitive photomos networks in which pixels of each photomos network are simultaneously exposed to electromagnetic radiation source for a predetermined period of time. Thereafter, transfer signals are applied to each photomos pixel and accumulated charges corresponding to the strength of the radiation imparted onto the pixels are transferred in a columnwise fashion to the end of each column of the photomos networks. The charges are summed at the end of the columns and placed in a reading register. The charges in the reading register of each photomos network are summed and a signal is output corresponding to the strength of the electromagnetic radiation imparted onto the photomos network.

Abstract translation: 检测施加到光敏光网络的矩阵上的电磁辐射的方法，其中每个光网络的像素同时暴露于电磁辐射源一段预定时间段。 此后，传送信号被施加到每个光像像素，并且与施加到像素上的辐射的强度对应的累积电荷以列方式传送到光电网络的每列的末端。 这些费用在列的末尾相加并放置在读取寄存器中。 将每个光网络的读取寄存器中的电荷相加，并且相应于施加到光电网络上的电磁辐射的强度输出信号。

公开(公告)号：US5422503A

公开(公告)日：1995-06-06

申请号：US170763

申请日：1993-12-21

Applicant: Yvon Cazaux ,  Jean-Alain Cortiula ,  Jean Marine

Inventor： Yvon Cazaux ,  Jean-Alain Cortiula ,  Jean Marine

IPC: G11C19/28 ,  H01L29/768 ,  H01L29/78

CPC classification number: H01L29/76816 ,  G11C19/285

Abstract: A CCD shift register having a reading device, or charge/voltage conversion device, at one end. This reading device or charge/voltage conversion device includes a diode, a precharging transistor, and an amplifier with high input impedance. To improve the efficiency of the charge transfer and, more generally, the behavior of the register, especially at high frequencies, it is proposed to shape the final gate of the register, and the diode, in such a way that the width along which the gate is adjacent to the diode (i.e. the width along which the end of the channel is adjacent to the diode) is great while, at the same time, the diode surface area is kept small.

Abstract translation: 一个具有读取装置或充电/电压转换装置的CCD移位寄存器。 该读取装置或充电/电压转换装置包括二极管，预充电晶体管和具有高输入阻抗的放大器。 为了提高电荷转移的效率，并且更一般地，提高寄存器的行为，特别是在高频下，建议对寄存器的最终栅极和二极管进行整形，使得其中的宽度 栅极与二极管相邻（即，沟道的端部与二极管相邻的宽度）很大，同时二极管表面积保持较小。

公开(公告)号：US5283451A

公开(公告)日：1994-02-01

申请号：US856706

申请日：1992-03-24

Applicant: Yvon Cazaux

Inventor： Yvon Cazaux

IPC: H01L27/148 ,  H01L31/0216 ,  H01L29/796

CPC classification number: H01L31/02164 ,  H01L27/14831

Abstract: The invention relates to photosensitive semiconductor devices and, more particularly, to linear arrays having several parallel rows of photoconductive points and operating in the integration and charge carry mode. In particular, the object of the invention is to reduce a smearing effect.The device of the invention comprises a photosensitive surface (SP) divided into photosensitive surface elements (SI1 to SMn) placed in rows (L1 to Ln) and in columns (C1 to CM). Each column forms a shift register that ends in a storage space (CS1 to CSM) of a readout register (RL) formed by a shift register of the charge transfer type: readout register (RL) being on same semiconductor substrate (10) as photosensitive surface (SP) the device includes.According to a feature of the invention, the device an intermediate zone (ZI) protected from light used to make a separation distance (DS) between photosensitive surface (SP) and readout register (RL).

Abstract translation: 本发明涉及光敏半导体器件，更具体地说，涉及具有多个平行的光电导点行并在积分和电荷进位模式下工作的线性阵列。 特别地，本发明的目的是减少拖尾效应。 本发明的器件包括被分成以行（L1至Ln）和列（C1至CM）放置的感光表面元件（SI1至SMn）的光敏表面（SP）。 每列形成移位寄存器，该移位寄存器结束于由电荷转移类型的移位寄存器形成的读出寄存器（RL）的存储空间（CS1至CSM）：读出寄存器（RL）位于与光敏器件相同的半导体衬底（10）上 表面（SP）的设备包括。 根据本发明的一个特征，该装置具有防止在光敏表面（SP）和读出寄存器（RL）之间形成间隔距离（DS）的光的中间区域（ZI）。

公开(公告)号：US4878103A

公开(公告)日：1989-10-31

申请号：US297651

申请日：1989-01-17

Applicant: Yvon Cazaux ,  Didier Herault ,  Yves Thenoz ,  Pierre Blanchard

Inventor： Yvon Cazaux ,  Didier Herault ,  Yves Thenoz ,  Pierre Blanchard

IPC: G11C19/28 ,  G11C27/04 ,  H01L21/339 ,  H01L29/762

CPC classification number: G11C27/04 ,  G11C19/287

Abstract: A charge transfer memory and its fabrication method are disclosed. The memory has charge transfer shift registers, with four phases and two level of electrodes, and a reading register with two phases and three levels of electrodes. At one end of each shift register, there is a final electrode contiguous with a reading storage electrode of the reading register, which is itself contiguous to a reading transfer electrode. These electrodes are made in a layer, with a second type of doping, of a semiconductor substrate with a first type of doping. Zones with a third type of doping are made facing the transfer electrodes of the reading register. According to the invention, facing the final electrode of each shift register, a zone with a fourth type of doping is made. This zone with a fourth type of doping prevents charges flowing in the reading register from returning to a shift register.

Abstract translation: 公开了电荷转移存储器及其制造方法。 存储器具有电荷转移移位寄存器，具有四相和两电平电极，以及具有两相和三电平电平的读取寄存器。 在每个移位寄存器的一端，存在与读取寄存器的读取存储电极相邻的最终电极，其本身与读取转移电极相邻。 这些电极制成具有第一类掺杂的半导体衬底的具有第二类掺杂的层。 具有第三类掺杂的区域面向读取寄存器的转移电极。 根据本发明，面对每个移位寄存器的最终电极，制成具有第四类掺杂的区域。 具有第四类掺杂的区域防止在读取寄存器中流动的电荷返回到移位寄存器。

公开(公告)号：US4873562A

公开(公告)日：1989-10-10

申请号：US287887

申请日：1988-12-21

Applicant: Yvon Cazaux ,  Yves Thenoz ,  Didier Herault ,  Pierre Blanchard

Inventor： Yvon Cazaux ,  Yves Thenoz ,  Didier Herault ,  Pierre Blanchard

IPC: G11C27/04 ,  H01L21/339 ,  H01L29/762 ,  H01L29/768

CPC classification number: H01L29/76841

Abstract: Disclosed are a charge-coupled device with lowering of output potential as well as a method for the fabrication of this device. In a known way, the device comprises, upstream on a semiconducting substrate with a first type of doping (P), a semiconducting layer with a second type of doping (N) and an insulating layer covering the former layer. Pairs of electrodes are formed on the insulating layer. Each pair has a transfer electrode and a storage electrode. Zones with a third type of doping N.sup.+) are made in the layer of a second type (N). A layer with a third type of doping (N.sup.-) is made downstream, in the layer with a second type of doping, and, downstream, there is formed at least one other pair of additional transfer and storage electrodes. A zone with a fourth type of doping (N.sup.--) is made beneath the additional transfer electrode in the layer with a third type of doping (N.sup.-). This pair of additional electrodes and the zone with a fourth type of doping make it possible to obtain the lowering of transfer potential at output.

Abstract translation: 公开了具有降低输出电位的电荷耦合器件以及用于制造该器件的方法。 以已知的方式，器件包括在具有第一类型掺杂（P）的半导体衬底上的上游，具有第二类型掺杂（N）的半导体层和覆盖前一层的绝缘层。 在绝缘层上形成一对电极。 每一对具有转移电极和存储电极。 在第二类型（N）的层中制造具有第三类掺杂N +的区域）。 在具有第二种类型的掺杂的层中，具有第三类掺杂（N-）的层被制成下游，并且在下游形成至少另外一对额外的转移和存储电极。 在具有第三类掺杂（N）的层中，在附加转移电极的下方形成具有第四类掺杂（N-）的区域。 这对附加电极和具有第四类掺杂的区域使得可以获得输出时的转移电位的降低。

公开(公告)号：US09040916B2

公开(公告)日：2015-05-26

申请号：US13882914

申请日：2011-11-03

Applicant: Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

Inventor： Yvon Cazaux ,  Benoit Giffard ,  Xavier Hugon

IPC: G01J5/20 ,  H01L27/14 ,  H01L31/00 ,  H01L27/146 ,  H01L31/18

CPC classification number: G01J5/20 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14685 ,  H01L27/1469 ,  H01L31/18

Abstract: The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers.

Abstract translation: 可见光和近红外辐射检测器包括近红外感光元件，用于读取近红外感光元件的读出电路，四个可见感光元件，其中一个面向近红外光敏元件放置，三个干涉滤光片 定义像素四元组。 包括近红外光敏元件和可见感光元件之一的第一像素没有滤光片。 分别包含三个可见感光元件的三个其他像素分别设置有与三原色相关联的滤光片。 每个干涉滤光器包括金属层和电介质层的交替。

公开(公告)号：US20130286266A1

公开(公告)日：2013-10-31

申请号：US13978792

申请日：2012-01-09

Applicant: Yvon Cazaux

Inventor： Yvon Cazaux

IPC: H04N3/14

CPC classification number: H04N3/1525 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H04N3/155 ,  H04N5/37206 ,  H04N5/3743

Abstract: Time delay and integration sensor comprising a matrix of photosensitive pixels organized in rows and columns. Each pixel of a column comprises a photosensitive element, a storage node, and a first transfer transistor connecting the photosensitive element to the storage node. Each pixel of a column, except for the last one, further comprises a second transfer transistor which connects the storage node of the pixel to the photosensitive element of the next pixel of the column. The two transfer transistors are connected to be active at the same time. With such a configuration, it is possible to define a sliding group of several consecutive pixels in a column, to expose the group of pixels, to aggregate the information of the pixels of the group, and to start again after shifting the group of pixels by one pixel.

Abstract translation: 时间延迟和积分传感器包括以行和列组织的感光像素矩阵。 列的每个像素包括感光元件，存储节点和将感光元件连接到存储节点的第一传输晶体管。 除了最后一个之外，列的每个像素还包括将像素的存储节点连接到列的下一个像素的感光元件的第二传输晶体管。 两个传输晶体管被连接成同时有效。 通过这样的配置，可以在列中定义几个连续像素的滑动组，以露出该组像素，聚集该组的像素的信息，并且在将该组像素移位之后再次开始 一个像素