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    Thermal management systems and methods for wafer processing systems
    12.
    发明授权
    Thermal management systems and methods for wafer processing systems 有权

    公开(公告)号：US10468276B2

    公开(公告)日：2019-11-05

    申请号：US15581589

    申请日：2017-04-28

    申请人： Applied Materials, Inc.

    发明人： David Benjaminson ,  Dmitry Lubomirsky

    IPC分类号： H02G1/08 ,  H01L21/67 ,  H01L21/324 ,  H01L21/687 ,  H01L21/66

    摘要： A workpiece holder includes a puck having a cylindrical axis, a radius about the cylindrical axis, and a thickness. At least a top surface of the puck is substantially planar, and the puck defines one or more thermal breaks. Each thermal break is a radial recess that intersects at least one of the top surface and a bottom surface of the cylindrical puck. The radial recess has a thermal break depth that extends through at least half of the puck thickness, and a thermal break radius that is at least one-half of the puck radius. A method of processing a wafer includes processing the wafer with a first process that provides a first center-to-edge process variation, and subsequently, processing the wafer with a second process that provides a second center-to-edge process variation that substantially compensates for the first center-to-edge process variation.

    MAGNETIC INDUCTION PLASMA SOURCE FOR SEMICONDUCTOR PROCESSES AND EQUIPMENT
    14.
    发明申请
    MAGNETIC INDUCTION PLASMA SOURCE FOR SEMICONDUCTOR PROCESSES AND EQUIPMENT 审中-公开

    公开(公告)号：US20190272999A1

    公开(公告)日：2019-09-05

    申请号：US15909812

    申请日：2018-03-01

    申请人： Applied Materials, Inc.

    发明人： Tae Seung Cho ,  Soonwook Jung ,  Junghoon Kim ,  Satoru Kobayashi ,  Kenneth D. Schatz ,  Soonam Park ,  Dmitry Lubomirsky

    IPC分类号： H01L21/3213 ,  H01L21/67 ,  H01L21/3105 ,  H01J37/32 ,  H05H1/46

    摘要： Exemplary magnetic induction plasma systems for generating plasma products are provided. The magnetic induction plasma system may include a first plasma source including a plurality of first sections and a plurality of second sections arranged in an alternating manner and fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source may circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source. Each of the plurality of second sections may include a dielectric material. The system may further include a plurality of first magnetic elements each of which may define a closed loop. Each of the plurality of second sections may define a plurality of recesses for receiving one of the plurality of first magnetic elements therein.

    OPTICAL EMISSION SPECTROSCOPY (OES) FOR REMOTE PLASMA MONITORING
    16.
    发明申请
    OPTICAL EMISSION SPECTROSCOPY (OES) FOR REMOTE PLASMA MONITORING 审中-公开

    公开(公告)号：US20190259580A1

    公开(公告)日：2019-08-22

    申请号：US16400615

    申请日：2019-05-01

    申请人： Applied Materials, Inc.

    发明人： Tae Seung Cho ,  Soonam Park ,  Junghoon Kim ,  Dmitry Lubomirsky ,  Shankar Venkataraman

    IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/311 ,  G01J3/02 ,  G01N21/73 ,  G01J3/443

    摘要： Methods and systems for etching substrates using a remote plasma are described. Remotely excited etchants are formed in a remote plasma and flowed through a showerhead into a substrate processing region to etch the substrate. Optical emission spectra are acquired from the substrate processing region just above the substrate. The optical emission spectra may be used to determine an endpoint of the etch, determine the etch rate or otherwise characterize the etch process. A weak plasma may be present in the substrate processing region. The weak plasma may have much lower intensity than the remote plasma. In cases where no bias plasma is used above the substrate in an etch process, a weak plasma may be ignited near a viewport disposed near the side of the substrate processing region to characterize the etchants.

    BOLTED WAFER CHUCK THERMAL MANAGEMENT SYSTEMS AND METHODS FOR WAFER PROCESSING SYSTEMS
    18.
    发明申请
    BOLTED WAFER CHUCK THERMAL MANAGEMENT SYSTEMS AND METHODS FOR WAFER PROCESSING SYSTEMS 审中-公开

    公开(公告)号：US20190109025A1

    公开(公告)日：2019-04-11

    申请号：US16209581

    申请日：2018-12-04

    申请人： Applied Materials, Inc.

    发明人： David Benjaminson ,  Dmitry Lubomirsky ,  Ananda Seelavanth Math ,  Saravanakumar Natarajan ,  Shubham Chourey

    IPC分类号： H01L21/67 ,  H01J37/32 ,  H01L21/687 ,  H01L21/324

    摘要： A workpiece holder includes a puck, first and second heating devices in thermal communication with respective inner and outer portions of the puck, and a thermal sink in thermal communication with the puck. The first and second heating devices are independently controllable, and the first and second heating devices are in greater thermal communication with the puck, than thermal communication of the thermal sink with the puck. A method of controlling temperature distribution of a workpiece includes flowing a heat exchange fluid through a thermal sink to establish a reference temperature to a puck, raising temperatures of radially inner and outer portions of the puck to first and second temperatures greater than the reference temperature, by activating respective first and second heating devices disposed in thermal communication with the radially inner and outer portions of the puck, and placing the workpiece on the puck.

    Semiconductor processing systems having multiple plasma configurations
    19.
    发明授权
    Semiconductor processing systems having multiple plasma configurations 有权

    公开(公告)号：US10256079B2

    公开(公告)日：2019-04-09

    申请号：US13791074

    申请日：2013-03-08

    申请人： Applied Materials, Inc.

    发明人： Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/3213 ,  C23C16/54 ,  C23C16/455 ,  C23C16/505 ,  H01L21/67

    摘要： An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.