公开(公告)号：US09355863B2

公开(公告)日：2016-05-31

申请号：US14828311

申请日：2015-08-17

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Seung Park ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244

Abstract: A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride.

Abstract translation: 描述了在异质结构上蚀刻暴露的氧化钛的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物可与含氮前体（例如含有胺（N））的前体结合。 由此产生的反应物在衬底处于升高的温度下蚀刻具有高钛氧化物选择性的图案化异质结构。 替代地，氧化钛蚀刻可以包括向远程等离子体供应含氟前体和含氮和氢的前体源。 该方法可用于除去少量或不含低K电介质，多晶硅，氮化硅或氮化钛的氧化钛。

公开(公告)号：US09023734B2

公开(公告)日：2015-05-05

申请号：US13834611

申请日：2013-03-15

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Jingchun Zhang ,  Ching-Mei Hsu ,  Seung Park ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.

Abstract translation: 描述了在图案化异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含氮和氢的前体结合。 因此，与典型的Siconi TM工艺相比，反应物在衬底处于高温下时蚀刻具有高氧化硅选择性的图案化异质结构。 蚀刻进行而不会在基板表面上产生残留物。 该方法可以用于去除硅或氧化硅，同时除去硅或多晶硅，氮化硅或氮化钛。

公开(公告)号：US20140080308A1

公开(公告)日：2014-03-20

申请号：US13834611

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Zhijun Chen ,  Jingchun Zhang ,  Ching-Mei Hsu ,  Seung Park ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.

Abstract translation: 描述了在图案化异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含氮和氢的前体结合。 因此，与典型的Siconi TM工艺相比，反应物在衬底处于高温下时蚀刻具有高氧化硅选择性的图案化异质结构。 蚀刻进行而不会在基板表面上产生残留物。 该方法可以用于去除硅或氧化硅，同时除去硅或多晶硅，氮化硅或氮化钛。

公开(公告)号：US09576788B2

公开(公告)日：2017-02-21

申请号：US14695392

申请日：2015-04-24

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Seung Park ,  Anchuan Wang ,  Zhenjiang Cui ,  Nitin K. Ingle

IPC: H01L21/02 ,  H01L21/311 ,  H01L27/115 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/02057 ,  H01L21/02063 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/32137 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method of removing an amorphous silicon/silicon oxide film stack from vias is described. The method may involve a remote plasma comprising fluorine and a local plasma comprising fluorine and a nitrogen-and-hydrogen-containing precursor unexcited in the remote plasma to remove the silicon oxide. The method may then involve a local plasma of inert species to potentially remove any thin carbon layer (leftover from the photoresist) and to treat the amorphous silicon layer in preparation for removal. The method may then involve removal of the treated amorphous silicon layer with several options possibly within the same substrate processing region. The bottom of the vias may then possess exposed single crystal silicon which is conducive to epitaxial single crystal silicon film growth. The methods presented herein may be particularly well suited for 3d NAND (e.g. VNAND) device formation.

Abstract translation: 描述了从通孔去除非晶硅/氧化硅膜堆叠的方法。 该方法可以包括远程等离子体，其包含氟和包含氟的局部等离子体和在远程等离子体中未喷射的含氮和氢的前体以除去氧化硅。 该方法可以包括惰性物质的局部等离子体，以潜在去除任何薄碳层（从光致抗蚀剂残留），并处理非晶硅层以准备去除。 该方法然后可以包括可能在相同的衬底处理区域内的几个选项去除经处理的非晶硅层。 然后，通孔的底部可以具有有利于外延单晶硅膜生长的暴露的单晶硅。 本文给出的方法可能特别适用于3d NAND（例如VNAND）器件形成。

公开(公告)号：US20160314961A1

公开(公告)日：2016-10-27

申请号：US14695392

申请日：2015-04-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Jie Liu ,  Seung Park ,  Anchuan Wang ,  Zhenjiang Cui ,  Nitin K. Ingle

IPC: H01L21/02 ,  H01L27/115 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/02057 ,  H01L21/02063 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/32137 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method of removing an amorphous silicon/silicon oxide film stack from vias is described. The method may involve a remote plasma comprising fluorine and a local plasma comprising fluorine and a nitrogen-and-hydrogen-containing precursor unexcited in the remote plasma to remove the silicon oxide. The method may then involve a local plasma of inert species to potentially remove any thin carbon layer (leftover from the photoresist) and to treat the amorphous silicon layer in preparation for removal. The method may then involve removal of the treated amorphous silicon layer with several options possibly within the same substrate processing region. The bottom of the vias may then possess exposed single crystal silicon which is conducive to epitaxial single crystal silicon film growth. The methods presented herein may be particularly well suited for 3d NAND (e.g. VNAND) device formation.

Abstract translation: 描述了从通孔去除非晶硅/氧化硅膜堆叠的方法。 该方法可以包括远程等离子体，其包含氟和包含氟的局部等离子体和在远程等离子体中未喷射的含氮和氢的前体以除去氧化硅。 该方法可以包括惰性物质的局部等离子体，以潜在去除任何薄碳层（从光致抗蚀剂残留），并处理非晶硅层以准备去除。 该方法然后可以包括可能在相同的衬底处理区域内的几个选项去除经处理的非晶硅层。 然后，通孔的底部可以具有有利于外延单晶硅膜生长的暴露的单晶硅。 本文给出的方法可能特别适用于3d NAND（例如VNAND）器件形成。

公开(公告)号：US09449845B2

公开(公告)日：2016-09-20

申请号：US14584099

申请日：2014-12-29

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Seung Park ,  Zhijun Chen ,  Ching-Mei Hsu

IPC: H01L21/302 ,  H01L21/3213 ,  H01J37/32

CPC classification number: H01L21/32136 ,  H01J37/32357

Abstract: Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.

Abstract translation: 描述了相对于图案化异质结构上的其它材料蚀刻暴露的氮化钛的方法，并且可以包括由含氟前体形成的远程等离子体蚀刻。 包括来自远程等离子体的等离子体流出物的前体组合流入基板处理区域以在各种操作条件下以高氮化钛选择性蚀刻图案化结构。 该方法可用于以比各种金属，氮化物和氧化物化合物更快的速率除去氮化钛。

公开(公告)号：US09368364B2

公开(公告)日：2016-06-14

申请号：US14566291

申请日：2014-12-10

Applicant: Applied Materials, Inc.

Inventor： Seung Park ,  Anchuan Wang

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01J37/32449 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32137

Abstract: A tunable plasma etch process includes generating a plasma in a controlled flow of a source gas including NH3 and NF3 to form a stream of plasma products, controlling a flow of un-activated NH3 that is added to the stream of plasma products to form an etch gas stream; and controlling pressure of the etch gas stream by adjusting at least one of the controlled flow of the source gas and the flow of un-activated NH3 until the pressure is within a tolerance of a desired pressure. An etch rate of at least one of polysilicon and silicon dioxide by the etch gas stream is adjustable by varying a ratio of the controlled flow of the source gas to the flow of un-activated NH3.

Abstract translation: 可调等离子体蚀刻工艺包括在包含NH 3和NF 3的源气体的受控流中产生等离子体以形成等离子体产物流，从而控制加入到等离子体产物流中的未活化NH 3的流动以形成蚀刻 气流; 以及通过调节源气体的受控流量和未活化的NH 3的流量中的至少一个来控​​制蚀刻气体流的压力，直到压力在所需压力的公差内。 通过蚀刻气流的多晶硅和二氧化硅中的至少一种的蚀刻速率可以通过改变源气体的受控流量与未活化NH 3的流量的比率来调节。

公开(公告)号：US09275834B1

公开(公告)日：2016-03-01

申请号：US14627991

申请日：2015-02-20

Applicant: Applied Materials, Inc.

Inventor： Seung Park ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/3244 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method of removing titanium nitride is described. The silicon nitride resides on a patterned substrate. The titanium nitride is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a fluorine-containing precursor, a nitrogen-and-hydrogen-containing precursor and an oxygen-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.

Abstract translation: 描述了一种去除氮化钛的方法。 氮化硅位于图案化衬底上。 使用在含氟前体，含氮和氢的前体和含氧前体的远程等离子体中形成的等离子体流出物，通过气相蚀刻除去氮化钛。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。

公开(公告)号：US08951429B1

公开(公告)日：2015-02-10

申请号：US14136200

申请日：2013-12-20

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Xikun Wang ,  Seung Park ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC: B44C1/22 ,  C23F1/00 ,  C23F3/00 ,  H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32357 ,  H01L21/31122

Abstract: Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor in combination with ammonia (NH3). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. Increasing a flow of ammonia during the process removes a typical skin of tungsten oxide having higher oxidation coordination number first and then selectively etching lower oxidation tungsten oxide. In some embodiments, the tungsten oxide etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.

Abstract translation: 描述了相对于钨，氧化硅，氮化硅和/或氮化钛选择性地蚀刻氧化钨的方法。 这些方法包括使用由含氟前体与氨（NH 3）组合形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氧化钨反应。 等离子体流出物与暴露的表面反应并选择性地去除氧化钨，同时非常缓慢地除去其它暴露的材料。 在该过程中增加氨的流动首先除去具有较高氧化配位数的氧化钨的典型表面，然后选择性地蚀刻较低的氧化氧化钨。 在一些实施例中，氧化钨蚀刻选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。

公开(公告)号：US08921234B2

公开(公告)日：2014-12-30

申请号：US13791125

申请日：2013-03-08

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Seung Park ,  Zhijun Chen ,  Ching-Mei Hsu

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01L21/32136 ,  H01J37/32357

Abstract: Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.

Abstract translation: 描述了相对于图案化异质结构上的其它材料蚀刻暴露的氮化钛的方法，并且可以包括由含氟前体形成的远程等离子体蚀刻。 包括来自远程等离子体的等离子体流出物的前体组合流入基板处理区域以在各种操作条件下以高氮化钛选择性蚀刻图案化结构。 该方法可用于以比各种金属，氮化物和氧化物化合物更快的速率除去氮化钛。