公开(公告)号：USD1023987S1

公开(公告)日：2024-04-23

申请号：US29787536

申请日：2021-06-07

Applicant: Applied Materials, Inc.

Designer： Eric Kihara Shono ,  Vishwas Kumar Pandey ,  Christopher S. Olsen ,  Hansel Lo ,  Agus Sofian Tjandra ,  Taewan Kim ,  Tobin Kaufman-Osborn

Abstract: FIG. 1 is a top plan view of a chamber inlet; and,
FIG. 2 is a top, right side perspective view of the chamber inlet of FIG. 1.
The broken lines shown in FIGS. 1 and 2 depict features of the chamber inlet that form no part of the claimed design.

公开(公告)号：US20240052487A1

公开(公告)日：2024-02-15

申请号：US18380803

申请日：2023-10-17

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

CPC classification number: C23C16/45553 ,  H01L21/02175 ,  H01L21/0228 ,  C23C16/45527

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US11732355B2

公开(公告)日：2023-08-22

申请号：US16662134

申请日：2019-10-24

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Eric Kihara Shono ,  Kartik Shah ,  Christopher S. Olsen ,  Agus Sofian Tjandra ,  Tobin Kaufman-Osborn ,  Taewan Kim ,  Hansel Lo

IPC: C23C16/452 ,  C23C16/455 ,  B01F23/10 ,  B01F25/421 ,  H01J37/32 ,  B01F25/10 ,  B01F25/314 ,  B01F35/511 ,  H01L21/67

CPC classification number: C23C16/452 ,  B01F23/10 ,  B01F23/19 ,  B01F25/102 ,  B01F25/3141 ,  B01F25/31423 ,  B01F25/421 ,  B01F35/511 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45561 ,  H01J37/3244 ,  H01J37/32357 ,  H01L21/67017

Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.

公开(公告)号：US11486038B2

公开(公告)日：2022-11-01

申请号：US16776204

申请日：2020-01-29

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara Shono ,  Vishwas Kumar Pandey ,  Christopher S. Olsen ,  Kartik Shah ,  Hansel Lo ,  Tobin Kaufman-Osborn ,  Rene George ,  Lara Hawrylchak ,  Erika Hansen

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/52 ,  C23C16/458 ,  C23C16/40

Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

公开(公告)号：US11066747B2

公开(公告)日：2021-07-20

申请号：US15468758

申请日：2017-03-24

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Adib Khan ,  Tobin Kaufman-Osborn ,  Srinivas D. Nemani ,  Ludovic Godet

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/448 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  B05D1/00 ,  B05D1/18

Abstract: Implementations described herein relate to apparatus and methods for self-assembled monolayer (SAM) deposition. Apparatus described herein includes processing chambers having various vapor phase delivery apparatus fluidly coupled thereto. SAM precursors may be delivered to process volumes of the chambers via various apparatus which is heated to maintain the precursors in vapor phase. In one implementation, a first ampoule or vaporizer configured to deliver a SAM precursor may be fluidly coupled to the process volume of a process chamber. A second ampoule or vaporizer configured to deliver a material different from the SAM precursor may also be fluidly coupled to the process volume of the process chamber.

公开(公告)号：US10947621B2

公开(公告)日：2021-03-16

申请号：US16126760

申请日：2018-09-10

Applicant: Applied Materials, Inc.

Inventor： Adib Khan ,  Qiwei Liang ,  Srinivas D. Nemani ,  Tobin Kaufman-Osborn

IPC: C23C16/455 ,  C23C16/448 ,  C23C16/44 ,  C07F15/00

Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In some embodiments, the apparatus includes a gas inlet line having an inlet valve; a gas outlet line having an outlet valve; a gas flow controller arranged to control the flow through the inlet valve; an orifice contained within at least one of the gas outlet line, the outlet valve, a chemical ampoule outlet valve, or outlet isolation valve; a chemical ampoule fluidly coupled to at least one of the gas inlet line and the gas outlet line; and a processing chamber. In some embodiments, the apparatus further includes a check valve, one or more orifices, and/or a heated divert line.

公开(公告)号：US09947539B2

公开(公告)日：2018-04-17

申请号：US15658266

申请日：2017-07-24

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Srinivas D. Nemani ,  Tobin Kaufman-Osborn

IPC: H01L21/02 ,  H01L21/263 ,  H01L21/027 ,  H01L21/285

CPC classification number: H01L21/263 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0243 ,  H01L21/02639 ,  H01L21/0274 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/321

Abstract: Atomic layer deposition in selected zones of a workpiece surface is accomplished by transforming the surfaces outside the selected zones to a hydrophobic state while the materials in the selected zones remain hydrophilic.

公开(公告)号：US20170323778A1

公开(公告)日：2017-11-09

申请号：US15658266

申请日：2017-07-24

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Srinivas D. Nemani ,  Tobin Kaufman-Osborn

IPC: H01L21/02 ,  H01L21/263 ,  H01L21/027 ,  H01L21/285

CPC classification number: H01L21/263 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0243 ,  H01L21/02639 ,  H01L21/0274 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/321

Abstract: Atomic layer deposition in selected zones of a workpiece surface is accomplished by transforming the surfaces outside the selected zones to a hydrophobic state while the materials in the selected zones remain hydrophilic.

公开(公告)号：US12291779B2

公开(公告)日：2025-05-06

申请号：US18380803

申请日：2023-10-17

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US12139790B2

公开(公告)日：2024-11-12

申请号：US17753524

申请日：2020-09-09

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Christopher Olsen ,  Rene George ,  Eric Shono ,  Lara Hawrylchak ,  Erika Hansen ,  Tobin Kaufman-Osborn ,  Hansel Lo ,  Kartik Shah

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/67

Abstract: Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas onto the substrate below. The localization of the reactant gas, allows for film growth on a specific portion of the substrate.