公开(公告)号：US20160168305A1

公开(公告)日：2016-06-16

申请号：US14971661

申请日：2015-12-16

Applicant: Arkema France

Inventor： Christophe NAVARRO ,  Celia NICOLET ,  Xavier CHEVALIER

IPC: C08F297/02 ,  G03F7/004

CPC classification number: C08F297/026 ,  B81C2201/0149 ,  B82Y30/00 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/004

Abstract: A method for controlling the synthesis of a block copolymer containing at least two blocks, with at least one nonpolar block and at least one polar block, said method making it possible in particular to control the ratio between the blocks and the molecular weight of each of the blocks, said copolymer being a block copolymer intended to be used as a mask in a method of nanolithography by direct self-assembly (DSA), said control being achieved by semicontinuous anionic polymerization in an aprotic nonpolar medium and comprising the following steps: synthesizing a first nonpolar block in the form of a macro-initiator, preparing a solution of said macro-initiator previously synthesized by mixing it with an alkali metal alcoholate in an aprotic nonpolar solvent, preparing a solution of a polar monomer in an aprotic nonpolar solvent, injecting the two solutions previously prepared of macro-initiator and of polar monomer into a micro-mixer, connected to a polymerization reactor, at a constant flow ratio, recovering the copolymer obtained.

Abstract translation: 用于控制含有至少两个嵌段的嵌段共聚物的合成方法，其中至少一个非极性嵌段和至少一个极性嵌段，所述方法使得可以特别地控制嵌段之间的比例和每个嵌段的分子量 所述共聚物是在直接自组装（DSA）的纳米光刻方法中用作掩模的嵌段共聚物，所述对照通过非质子非极性介质中的半连续阴离子聚合实现，并包括以下步骤：合成 以大分子引发剂的形式存在的第一非极性嵌段，通过将非离子非极性溶剂中的碱金属醇化物混合而制备前述合成的所述大分子引发剂的溶液，在非质子非极性溶剂中制备极性单体的溶液， 将预先制备的大分子引发剂和极性单体的两种溶液注入与聚合反应器连接的微型混合器中， t流量比，回收得到的共聚物。

公开(公告)号：US20150331313A1

公开(公告)日：2015-11-19

申请号：US14654277

申请日：2013-12-16

Applicant: ARKEMA FRANCE ,  COMMISSARIAT A L' ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Christophe NAVARRO ,  Maxime ARGOUD ,  Xavier CHEVALIER ,  Raluca TIRON ,  Ahmed GHARBI

IPC: G03F1/76 ,  G03F7/32 ,  G03F1/00

CPC classification number: G03F1/76 ,  B82Y30/00 ,  C08L53/00 ,  G03F1/00 ,  G03F7/0002 ,  G03F7/325 ,  H01L21/0274

Abstract: The invention concerns a manufacturing method for nanolithography masks from a PS-b-PMMA block copolymer film deposited on a surface to be etched, said copolymer film comprising PMMA nanodomains orientated perpendicularly to the surface to be etched, said method being characterized in that it comprises the following steps: partially irradiating said copolymer film to form a first irradiated area and a second non-irradiated area in said copolymer film, then treating said copolymer film in a developer solvent to selectively remove at least said PMMA nanodomains of said first irradiated area of said copolymer film.

Abstract translation: 本发明涉及一种沉积在被蚀刻表面上的PS-b-PMMA嵌段共聚物膜的纳米光刻掩模的制造方法，所述共聚物膜包含垂直于被蚀刻表面定向的PMMA纳米域，所述方法的特征在于它包括 以下步骤：部分地照射所述共聚物膜以在所述共聚物膜中形成第一照射区域和第二未照射区域，然后在显影剂溶剂中处理所述共聚物膜以选择性地除去所述第一照射区域的至少所述PMMA纳米域 所述共聚物膜。

公开(公告)号：US20190002684A1

公开(公告)日：2019-01-03

申请号：US16061912

申请日：2016-12-16

Applicant: ARKEMA FRANCE

Inventor： Christophe NAVARRO ,  Celia NICOLET ,  Xavier CHEVALIER

IPC: C08L53/00 ,  C08F4/609 ,  C08F297/02 ,  C08F220/18 ,  C08F212/08

Abstract: Provided is a process for reducing the structuring time of an ordered film of a diblock copolymer on a surface. The process includes curing, on a surface, a composition including a diblock copolymer at a structuring temperature between the Tg of the diblock copolymer and the decomposition temperature of the diblock copolymer to form an ordered film of the diblock copolymer on the substrate. The composition has a product χeffective*N of between 10.5 and 40 at the structuring temperature, where χeffective is the Flory-Huggins parameter of the diblock copolymer and N is the total degree of polymerization of the blocks of the diblock copolymer.

公开(公告)号：US20190002657A1

公开(公告)日：2019-01-03

申请号：US16062491

申请日：2016-12-16

Applicant: ARKEMA FRANCE

Inventor： Christophe NAVARRO ,  Celia NICOLET ,  Xavier CHEVALIER

IPC: C08J5/18 ,  C08K5/5353 ,  C08F297/02 ,  C08F220/18 ,  C08F212/08 ,  G03F7/00 ,  G03F9/00

Abstract: Provided is a process for reducing the number of defects of an ordered film of a diblock copolymer on a surface. The process includes curing, on a surface, a composition including a diblock copolymer at a structuring temperature between the Tg of the diblock copolymer and the decomposition temperature of the diblock copolymer to form an ordered film of the diblock copolymer on the substrate. The composition has a product Xeffective*N of between 10.5 and 40 at the structuring temperature, where Xeffective is the Flory-Huggins parameter of the diblock copolymer and N is the total degree of polymerization of the blocks of the diblock copolymer.

公开(公告)号：US20180371145A1

公开(公告)日：2018-12-27

申请号：US16062460

申请日：2016-12-16

Applicant: ARKEMA FRANCE

Inventor： Christophe NAVARRO ,  Celia NICOLET ,  Xavier CHEVALIER

IPC: C08F297/02 ,  C08F220/18 ,  C08F212/08 ,  G03F7/00

Abstract: Provided is a process for improving the critical dimension uniformity of an ordered film of a diblock copolymer on a surface. The process includes curing, on a surface, a composition including a diblock copolymer at a structuring temperature between the Tg of the diblock copolymer and the decomposition temperature of the diblock copolymer to form an ordered film of the diblock copolymer on the substrate. The composition has a product Xeffective*N of between 10.5 and 40 at the structuring temperature, where Xeffective is the Flory-Huggins parameter of the diblock copolymer and N is the total degree of polymerization of the blocks of the diblock copolymer.

公开(公告)号：US20180364562A1

公开(公告)日：2018-12-20

申请号：US16062513

申请日：2016-12-16

Applicant: ARKEMA FRANCE

Inventor： Christophe NAVARRO ,  Celia NICOLET ,  Xavier CHEVALIER

IPC: G03F1/68 ,  C08F297/02

Abstract: Provided is a process for forming an ordered film of a block copolymer on a surface. The process includes curing, on a surface, a composition comprising at least one block copolymer at a structuring temperature between the highest Tg of the at least one block copolymer and the decomposition temperature of the at least one block copolymer to form an ordered film comprising the at least one block copolymer on the substrate. The composition has a product χ effective*N of between 10.5 and 40 at the structuring temperature, where χ effective is the Flory-Huggins parameter of the block copolymer and N is the total degree of polymerization of the blocks of the block copolymer. The ordered film has a thickness greater than 20 nm and a period greater than 10 nm.

公开(公告)号：US20180164679A1

公开(公告)日：2018-06-14

申请号：US15545070

申请日：2016-01-21

Applicant: ARKEMA FRANCE

Inventor： Xavier CHEVALIER ,  Raber INOUBLI ,  Christophe NAVARRO ,  Celia NICOLET

IPC: G03F7/00 ,  B05D1/00 ,  B05D3/02 ,  C09D153/00 ,  G03F7/16 ,  C08L53/00 ,  G03F1/68

CPC classification number: G03F7/0002 ,  B05D1/005 ,  B05D3/0254 ,  C08L53/00 ,  C08L2205/02 ,  C09D153/00 ,  G03F1/68 ,  G03F7/162 ,  G03F7/168

Abstract: The present invention relates to a process for obtaining high-period (typically >10 nm), thick (typically >20 nm) ordered films on a nanometric scale comprising a block copolymer (BCP). The invention also relates to the compositions used to obtain these thick ordered films and to the resulting ordered films that can be used in particular as masks in the lithography field.

公开(公告)号：US20160369031A1

公开(公告)日：2016-12-22

申请号：US15117972

申请日：2015-02-06

Applicant: ARKEMA FRANCE

Inventor： Christophe NAVARRO ,  Celia NICOLET ,  Xavier CHEVALIER

IPC: C08F297/02 ,  G03F7/00 ,  C09D153/00

CPC classification number: C08F297/026 ,  B81C1/00206 ,  B81C2201/0149 ,  B82Y30/00 ,  C09D153/00 ,  G03F7/0002

Abstract: The invention relates to a process for controlling the surface energy of a substrate in order to make it possible to obtain a specific orientation of the nanodomains of a film of block copolymer subsequently deposited on the said surface, the said process being characterized in that it comprises the following stages: preparing a blend of copolymers, each copolymer comprising at least one functional group which allows it to be grafted to or crosslinked on the surface of the said substrate, depositing the said blend thus prepared on the surface of the said substrate, carrying out a treatment which results in the grafting to the surface of the substrate or the crosslinking on the surface of the substrate of each of the copolymers of the blend.

Abstract translation: 本发明涉及一种用于控制基材的表面能的方法，以获得随后在表面上沉积的嵌段共聚物膜的纳米域的特定取向，其特征在于其包括以下步骤：制备 聚合物的混合物，每个聚合物包含至少一个官能团，使其能够接枝或交联到基材的表面; 将如此制备的混合物沉积在基材的表面上; 进行处理，导致混合物的每种聚合物接枝或交联到基材的表面。

公开(公告)号：US20160333216A1

公开(公告)日：2016-11-17

申请号：US15103736

申请日：2014-12-11

Applicant: ARKEMA FRANCE ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  INSTITUT POLYTECHNIQUE DE BORDEAUX ,  UNIVERSITE DE BORDEAUX

Inventor： Muhammad MUMTAZ ,  Karim AISSOU ,  Cyril BROCHON ,  Eric CLOUTET ,  Guillaume FLEURY ,  Georges HADZIIOANNOU ,  Christophe NAVARRO ,  Celia NICOLET ,  Xavier CHEVALIER

IPC: C09D153/00 ,  B05D1/28 ,  B05D1/00

CPC classification number: C09D153/00 ,  B05D1/005 ,  B05D1/28 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y40/00 ,  C08G77/60 ,  G03F7/0002 ,  H01L21/0271 ,  Y10S977/892

Abstract: The invention relates to a process that enables the creation of nanometric structures by self-assembly of block copolymers, at least one of the blocks of which results from the polymerization of monomers comprising at least one cyclic entity corresponding to the formula I. where X═Si(R1,R2); Ge(R1,R2) Z═Si(R3,R4); Ge(R3,R4); O; S; C(R3,R4) Y═O; S; C(R5,R6) T=O; S; C(R7,R8) R1, R2, R3, R4, R5, R6, R7, R8 are selected from hydrogen, linear, branched or cyclic alkyl groups, with or without heteroatoms, and aromatic groups with or without heteroatoms.

Abstract translation: R 1，R 2，R 3，R 4，R 5，R 6，R 7，R 8选自具有或不具有杂原子的氢，直链，支链或环状烷基，以及具有或不具有杂原子的芳族基团。

公开(公告)号：US20150328661A1

公开(公告)日：2015-11-19

申请号：US14809722

申请日：2015-07-27

Applicant: ARKEMA FRANCE ,  CNRS ,  UNIVERSITÉ DE BORDEAUX ,  INSTITUT POLYTECHNIQUE DE BORDEAUX

Inventor： Christophe NAVARRO ,  Xavier CHEVALIER ,  Celia NICOLET ,  Ilias ILIOPOULOS ,  Raluca TIRON ,  Guillaume FLEURY ,  Georges HADZllOANNOU

IPC: B05D3/04 ,  B05D1/00 ,  G03F1/50 ,  B05D3/02

CPC classification number: B05D3/046 ,  B05D1/005 ,  B05D3/0254 ,  C08F293/005 ,  C08F2438/02 ,  C08J5/18 ,  C08J2353/00 ,  C08L53/00 ,  C08L2205/025 ,  C08L2205/03 ,  C09D153/00 ,  G03F1/50 ,  G03F1/68 ,  G03F7/0002

Abstract: The present invention relates to a process for producing nanostructured films obtained from block copolymers exhibiting a dispersity index of between 1.1 and 2, limits included, without nanostructuring defects, on a surface, in order for this treated surface to be able to be used as masks for applications in microelectronics.