公开(公告)号：US20210071298A1

公开(公告)日：2021-03-11

申请号：US16952363

申请日：2020-11-19

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Werner Knaepen ,  Krzysztof Kamil Kachel ,  David Kurt de Roest ,  Bert Jongbloed ,  Dieter Pierreux

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/033 ,  C23C16/448 ,  C23C16/04 ,  C23C16/52 ,  C23C16/56

Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.

公开(公告)号：US20240339321A1

公开(公告)日：2024-10-10

申请号：US18624866

申请日：2024-04-02

Applicant: ASM IP Holding B.V.

Inventor： Kishan Ashokbhai Patel ,  Ikhlas Rahmat ,  Yoann Tomczak ,  Charles Dezelah ,  David Kurt de Roest

IPC: H01L21/027 ,  G03F7/004

CPC classification number: H01L21/0274 ,  G03F7/0042

Abstract: Structures, related methods, and related systems are disclosed. An embodiment of a structure comprises a resist and an inhibition layer. The EUV resist comprises exposed resist areas and unexposed resist areas. The inhibition layer inhibits the unexposed resist areas versus the exposed resist areas with respect to vapor phase deposition of a hard mask.

公开(公告)号：US20240274313A1

公开(公告)日：2024-08-15

申请号：US18431164

申请日：2024-02-02

Applicant: ASM IP Holding B.V.

Inventor： Fatemeh Davodi ,  Steaphan Wallace ,  Yoann Tomczak ,  David Kurt de Roest

IPC: G21K1/06 ,  G03F7/00 ,  G03F7/11 ,  H01J37/32

CPC classification number: G21K1/06 ,  G03F7/0035 ,  G03F7/11 ,  G03F7/70033 ,  G03F7/7075 ,  H01J37/32146 ,  H01J2237/332

Abstract: Structures, related methods, and related systems for reducing EUV dose. A structure as described herein can comprise a substrate; an electron reflector layer overlying the substrate; and, an extreme ultraviolet (EUV) resist overlying an electron generation layer. The EUV resist is constructed and arranged for absorbing EUV radiation and generating secondary electrons. The electron reflector layer is constructed and arranged for reflecting secondary electrons generated by the EUV resist back towards the EUV resist.

公开(公告)号：US20230420256A1

公开(公告)日：2023-12-28

申请号：US18236051

申请日：2023-08-21

Applicant: ASM IP Holding B.V.

Inventor： Ivan Zyulkov ,  David Kurt de Roest ,  Yoann Tomczak ,  Michael Eugene Givens ,  Perttu Sippola ,  Tatiana Ivanova ,  Zecheng Liu ,  Bokheon Kim ,  Daniele Piumi

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/0337 ,  H01L21/0332 ,  H01L21/0273 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/0228 ,  H01L21/02172 ,  H01L21/02205

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

公开(公告)号：US20230324803A1

公开(公告)日：2023-10-12

申请号：US18131279

申请日：2023-04-05

Applicant: ASM IP Holding, B.V.

Inventor： Jan Deckers ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  David Kurt de Roest ,  Kishan Ashokbhai Patel ,  Yoann Tomczak

IPC: G03F7/16 ,  G03F7/075 ,  G03F7/40 ,  G03F7/004

CPC classification number: G03F7/167 ,  G03F7/0757 ,  G03F7/40 ,  G03F7/0042

Abstract: Gas-phase methods of forming radiation-sensitive, patternable material and systems for forming the material. Exemplary methods include gas-phase formation of a layer comprising a polymeric material that forms the radiation-sensitive, patternable material on a surface of the substrate. Portions of the layer comprising the polymeric material can be exposed to radiation or active species to form exposed and unexposed regions. Material can be selectively deposed onto the exposed or unexposed portions and/or one of the exposed and unexposed regions can be selectively removed. One or more method steps can be performed within a reaction chamber and/or a reactor system.

公开(公告)号：US20220019149A1

公开(公告)日：2022-01-20

申请号：US17375235

申请日：2021-07-14

Applicant: ASM IP Holding B.V.

Inventor： Daniele Piumi ,  David Kurt de Roest

IPC: G03F7/20 ,  H01L23/00

Abstract: Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.

公开(公告)号：US11139163B2

公开(公告)日：2021-10-05

申请号：US17064865

申请日：2020-10-07

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Maes ,  David Kurt de Roest ,  Oreste Madia

IPC: H01L21/02 ,  H01L21/311

Abstract: Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H2 plasma, a second Ar plasma and an etchant.

公开(公告)号：US20210033977A1

公开(公告)日：2021-02-04

申请号：US16931275

申请日：2020-07-16

Applicant: ASM IP Holding B.V.

Inventor： Ivo Raaijmakers ,  Daniele Piumi ,  Ivan Zyulkov ,  David Kurt de Roest ,  Michael Eugene Givens

IPC: G03F7/16

Abstract: A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.

公开(公告)号：US20200064737A1

公开(公告)日：2020-02-27

申请号：US16546543

申请日：2019-08-21

Applicant: ASM IP Holding B.V.

Inventor： David Kurt de Roest

IPC: G03F7/16 ,  H01L21/027 ,  H01L21/67

Abstract: A substrate processing apparatus comprising a wet processing station with a resist coating device for coating a resist on a substrate and/or a development processing device for developing the resist on the substrate is disclosed. The apparatus may have an additional processing station and a substrate handler for moving the substrate to the wet, and/or additional processing station and moving the substrate in a direction in and/or out of the substrate processing apparatus. The additional processing station comprises an infiltration device.

公开(公告)号：US20250079155A1

公开(公告)日：2025-03-06

申请号：US18814784

申请日：2024-08-26

Applicant: ASM IP Holding B.V.

Inventor： Fatemeh Davodi ,  David Kurt de Roest

IPC: H01L21/02

Abstract: Methods, systems, and structures for lithography, in particular EUV lithography. Embodiments of structures disclosed herein comprise a hafnium oxide secondary electron generation layer which can advantageously reduce the dose requirement to fully develop EUV resist.