公开(公告)号：US10516367B2

公开(公告)日：2019-12-24

申请号：US15887609

申请日：2018-02-02

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Jaw-Ming Ding

IPC: H03F1/02 ,  H03F3/19 ,  H03F3/24 ,  H03K19/21

Abstract: The present disclosure relates to a logic control circuit including a first inverter and a voltage limiter. The first inverter is connected to a first input voltage. The first inverter includes a first transistor having a first terminal and a second terminal. The second terminal of the first transistor is connected to a ground. The voltage limiter includes a second transistor. The second transistor has a gate connected to a ground, a source connected to the first terminal of the first transistor and a drain connected to a second input voltage.

公开(公告)号：US20160358862A1

公开(公告)日：2016-12-08

申请号：US14730022

申请日：2015-06-03

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wei-Hsuan Lee ,  Chien-Yeh Liu ,  Sung-Mao Li ,  Jaw-Ming Ding

IPC: H01L23/552

CPC classification number: H01L23/552 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/00012

Abstract: The present disclosure relates to a semiconductor device package and a manufacturing method thereof. The semiconductor device package includes a carrier, at least one electronic component, a first magnetic layer and a second magnetic layer. The carrier has a top surface on which the electronic component is disposed. The first magnetic layer is disposed on the top surface of the carrier and encapsulates the electronic component. The second magnetic layer is disposed on the first magnetic layer and covers a top surface and a lateral surface of the first magnetic layer. A permeability of the first magnetic layer is less than a permeability of the second magnetic layer.

Abstract translation: 本公开涉及一种半导体器件封装及其制造方法。 半导体器件封装包括载体，至少一个电子部件，第一磁性层和第二磁性层。 载体具有设置有电子部件的顶面。 第一磁性层设置在载体的顶表面上并封装电子部件。 第二磁性层设置在第一磁性层上并覆盖第一磁性层的顶表面和侧表面。 第一磁性层的磁导率小于第二磁性层的磁导率。

公开(公告)号：US09013238B2

公开(公告)日：2015-04-21

申请号：US14016437

申请日：2013-09-03

Applicant: Advanced Semiconductor Engineering Inc.

Inventor： Jaw-Ming Ding ,  Jia-Hong Mou ,  Hsin-Chin Chang

IPC: H03F3/04 ,  H03F1/02 ,  H03F3/19

CPC classification number: H03F1/0205 ,  H03F1/0261 ,  H03F1/52 ,  H03F3/19 ,  H03F3/191 ,  H03F2200/18

Abstract: A radio frequency (RF) amplifier is disclosed. The RF power amplifier includes a bias circuit, an output-stage circuit and a RF compensation circuit. When a first system voltage is larger than a first voltage threshold value, the bias circuit generates a first current rising slightly. When first system voltage is larger than second voltage threshold value, the RF compensation circuit receives a second circuit rising slightly transmitted from the bias circuit. When the first system voltage is in an operation voltage range, the first current is larger than the second circuit so as to a quiescent operating current of the RF power amplifier is independent of change of the first system voltage. When the first system voltage is larger than a third voltage threshold value, the first current is equal to the second current so as to have the bias current being a zero current to protect the RF power amplifier from over-voltage.

Abstract translation: 公开了射频（RF）放大器。 RF功率放大器包括偏置电路，输出级电路和RF补偿电路。 当第一系统电压大于第一电压阈值时，偏置电路产生稍微上升的第一电流。 当第一系统电压大于第二电压阈值时，RF补偿电路接收从偏置电路稍微传输的第二电路。 当第一系统电压处于工作电压范围时，第一电流大于第二电路，以使RF功率放大器的静态工作电流与第一系统电压的变化无关。 当第一系统电压大于第三电压阈值时，第一电流等于第二电流，以使偏置电流为零电流，以保护RF功率放大器免受过电压。

公开(公告)号：US10992266B2

公开(公告)日：2021-04-27

申请号：US16365370

申请日：2019-03-26

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Jaw-Ming Ding

IPC: H03F3/04 ,  H03F1/22 ,  H03F3/21 ,  H03F1/30 ,  H03F3/193

Abstract: A power amplifier circuit includes a first transistor, a second transistor and a bias circuit. The first transistor has a base configured to receive a first signal. The second transistor has an emitter connecting to a collector of the first transistor and a collector configured to output a second signal. The bias circuit is coupled to the first transistor and the second transistor. The bias circuit is configured to provide a direct current (DC) voltage at the collector of the second transistor about twice a DC voltage at the collector of the first transistor. The bias circuit is configured to provide an alternating current (AC) or radio frequency (RF) voltage at the collector of the second transistor about twice an AC or RF voltage at the collector of the first transistor.

公开(公告)号：US10944363B2

公开(公告)日：2021-03-09

申请号：US16024059

申请日：2018-06-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Jaw-Ming Ding

IPC: H03F1/02 ,  H03F3/24 ,  H03F3/193

Abstract: The present disclosure relates to a power amplifier circuit. The power amplifier circuit includes a voltage-controlled current source and a current mirror. The voltage-controlled current source is configured to receive a first voltage and to generate a first current. The current mirror is connected to the voltage-controlled current source and to generate a second current in response to the first current. The second current continuously changes from 0 mA to about 120 mA as the first voltage continuously changes from 0 V to about 1 V.

公开(公告)号：US09184716B2

公开(公告)日：2015-11-10

申请号：US14228661

申请日：2014-03-28

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING INC.

Inventor： Jaw-Ming Ding ,  Jia-Hong Mou

IPC: H03F3/00 ,  H03G3/30 ,  H03F3/19 ,  H03F1/02

CPC classification number: H03G3/3036 ,  H03F1/0205 ,  H03F1/223 ,  H03F3/00 ,  H03F3/19 ,  H03F3/193 ,  H03F2200/294 ,  H03F2200/451

Abstract: A low noise amplifier is disclosed. The low noise amplifier comprises a current mirror circuit, a bias circuit, a cascode amplifying circuit and a power gain compensating circuit. The current mirror circuit is used for providing a first current and third current. The bias circuit is used for receiving a first current and third current and outputting a first bias voltage and a second bias voltage according to the first current and third current. The cascode amplifying circuit respectively receives the first bias voltage and the second bias voltage, and accordingly to work at an operation bias point. The power gain compensating circuit is used for receiving a RF output signal and accordingly outputs a gain compensating signal to the current mirror circuit so as to dynamically adjust current value of the first current and third current and further to compensates power gain of the low noise amplifier in order to increase 1 dB gain compression point (P1 dB).

Abstract translation: 公开了一种低噪声放大器。 低噪声放大器包括电流镜电路，偏置电路，共源共栅放大电路和功率增益补偿电路。 电流镜电路用于提供第一电流和第三电流。 偏置电路用于接收第一电流和第三电流，并且根据第一电流和第三电流输出第一偏置电压和第二偏置电压。 共射共基放大电路分别接收第一偏置电压和第二偏置电压，并因此在工作偏压点工作。 功率增益补偿电路用于接收RF输出信号，并且相应地向电流镜电路输出增益补偿信号，以便动态地调节第一电流和第三电流的电流值，并进一步补偿低噪声放大器的功率增益 以增加1 dB增益压缩点（P1 dB）。

公开(公告)号：US09148097B2

公开(公告)日：2015-09-29

申请号：US14098883

申请日：2013-12-06

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING INC.

Inventor： Jaw-Ming Ding ,  Chien-Yeh Liu

IPC: H03G3/10 ,  H03F3/04 ,  H03F3/191 ,  H03F1/02

CPC classification number: H03F3/191 ,  H03F1/0266

Abstract: A radio frequency (RF) power amplifier is disclosed. The RF power amplifier includes a bias circuit, an output stage circuit and dynamic bias controlling circuit. The bias circuit receives a first system voltage and provides a working voltage accordingly. The output stage circuit receives the working voltage so as to work at an operation bias point. The dynamic bias controlling circuit detects a RF input signal and outputs a compensation voltage to the bias circuit according to variation of the RF input signal, wherein the dynamic bias controlling circuit is an open loop configuration. When an input power of the RF input signal increases and makes the working voltage decreases so as to shift the operation bias point, the bias circuit adjusts the working voltage upward so as to recover or enhance the operation bias point according to the compensation voltage received.

Abstract translation: 公开了射频（RF）功率放大器。 RF功率放大器包括偏置电路，输出级电路和动态偏置控制电路。 偏置电路接收第一系统电压并相应地提供工作电压。 输出级电路接收工作电压，以便在操作偏压点工作。 动态偏置控制电路检测RF输入信号，并根据RF输入信号的变化向偏置电路输出补偿电压，其中动态偏置控制电路是开环配置。 当RF输入信号的输入功率增加并且使工作电压降低以便移动操作偏置点时，偏置电路向上调整工作电压，以便根据所接收的补偿电压来恢复或增强操作偏压点。

公开(公告)号：US09148088B1

公开(公告)日：2015-09-29

申请号：US14283129

申请日：2014-05-20

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING INC.

Inventor： Jaw-Ming Ding

IPC: H03F3/04 ,  H03G3/00 ,  H03F1/02 ,  H03F3/19 ,  H03F3/21 ,  H03F1/34 ,  H03F1/30

CPC classification number: H03F1/0261 ,  H03F1/223 ,  H03F1/301 ,  H03F1/342 ,  H03F3/193 ,  H03F2200/129 ,  H03F2200/15 ,  H03F2200/18 ,  H03F2200/447 ,  H03F2200/451

Abstract: The RF stacked power amplifier comprises a voltage-dividing circuit, a negative feedback bias circuit, a current source circuit and a stacked amplifying circuit. The voltage-dividing circuit receives a system voltage and divides the system voltage for outputting a first reference partial voltage and a second reference partial voltage. The negative feedback bias circuit receives a negative feedback reference voltage and correspondingly outputs a second bias reference voltage according to a result of comparing the second reference partial voltage and the negative feedback reference voltage. The current source circuit determines a bias reference current according to the first reference partial voltage. The stacked amplifying circuit outputs the negative feedback reference voltage and determines an operation bias point according to a first bias reference voltage and the bias reference current. The RF stacked power amplifier makes the voltage-drop and the power consumption of each transistor equal via the voltage-dividing circuit.

Abstract translation: RF堆叠功率放大器包括分压电路，负反馈偏置电路，电流源电路和堆叠放大电路。 分压电路接收系统电压，并分压用于输出第一基准分压和第二基准分压的系统电压。 负反馈偏置电路接收负反馈参考电压，并且根据比较第二参考分压和负反馈参考电压的结果相应地输出第二偏置参考电压。 电流源电路根据第一参考部分电压确定偏置参考电流。 堆叠放大电路输出负反馈参考电压，并根据第一偏置参考电压和偏置参考电流确定工作偏置点。 RF堆叠功率放大器通过分压电路使每个晶体管的电压降和功耗相等。

公开(公告)号：US09141125B2

公开(公告)日：2015-09-22

申请号：US14016432

申请日：2013-09-03

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING INC.

Inventor： Jaw-Ming Ding ,  Hsin-Chin Chang

IPC: G05F3/30 ,  G05F1/567

CPC classification number: G05F3/30

Abstract: A bandgap reference voltage generating circuit for providing a reference voltage is disclosed. The bandgap reference voltage generating circuit includes four-terminal current source circuit, a regulator circuit and a temperature-compensating circuit. The four-terminal current source circuit outputs a first voltage, a second voltage and a first current which are independent of variation of a first system voltage. The regulator circuit receives the first voltage and the second voltage and when the first system voltage is larger than a threshold voltage value, the regulator circuit outputs the reference voltage independent of variation of the first system voltage via voltage-difference between the first voltage and the second voltage. The temperature-compensating circuit receives the first current and compensates a temperature curve of the reference voltage outputted from the regulator circuit.

Abstract translation: 公开了一种用于提供参考电压的带隙基准电压产生电路。 带隙参考电压产生电路包括四端电流源电路，调节器电路和温度补偿电路。 四端电流源电路输出与第一系统电压的变化无关的第一电压，第二电压和第一电流。 调节器电路接收第一电压和第二电压，并且当第一系统电压大于阈值电压值时，调节器电路通过第一电压和第二电压之间的电压差而独立于第一系统电压的变化而输出参考电压 第二电压。 温度补偿电路接收第一电流并补偿从调节器电路输出的参考电压的温度曲线。

公开(公告)号：US09065389B2

公开(公告)日：2015-06-23

申请号：US13975535

申请日：2013-08-26

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING INC.

Inventor： Jaw-Ming Ding ,  Hsin Chin Chang

IPC: H03F3/04 ,  H03F3/19 ,  H03F1/30

CPC classification number: H03F3/19 ,  H03F1/302 ,  H03F2200/18 ,  H03F2200/447

Abstract: A radio frequency (RF) power amplifier with no reference voltage for biasing is disclosed. The RF power amplifier includes a three-terminal current source circuit, a current mirror circuit and an output-stage circuit. The three-terminal current source circuit receives a first system voltage and accordingly outputs a first current and a second current, and a source voltage exists between a first output terminal of the first current and a second output terminal of the second current. The current mirror circuit receives the first current and the second current and accordingly generates a bias current. The output-stage circuit receives the bias current so as to work at an operation point. The RF power amplifier utilizes the source voltage of the three-terminal current source circuit so the first system voltage is between a first voltage and a second voltage, and then the output-stage circuit outputs an output current which does not vary with a deviation of the first system voltage also with temperature compensation.

Abstract translation: 公开了一种无偏压参考电压的射频（RF）功率放大器。 RF功率放大器包括三端电流源电路，电流镜电路和输出级电路。 三端电流源电路接收第一系统电压，并相应地输出第一电流和第二电流，并且源电压存在于第一电流的第一输出端和第二电流的第二输出端之间。 电流镜电路接收第一电流和第二电流，从而产生偏置电流。 输出级电路接收偏置电流，以便在操作点工作。 RF功率放大器利用三端电流源电路的源极电压，使得第一系统电压在第一电压和第二电压之间，然后输出级电路输出不随着 第一个系统电压也带有温度补偿。