公开(公告)号：US06583468B2

公开(公告)日：2003-06-24

申请号：US10007099

申请日：2001-12-04

申请人： Yuji Hori ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

发明人： Yuji Hori ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

IPC分类号： H01L2976

CPC分类号： H01L29/66318 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/66856

摘要： An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 1011/cm2 or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection. Then, on the AlN film an n-GaN film is epitaxially grown as a conductive layer having a dislocation density of 1010/cm2 or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.

公开(公告)号：US06573535B2

公开(公告)日：2003-06-03

申请号：US09997996

申请日：2001-11-30

申请人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

发明人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

IPC分类号： H01L3112

CPC分类号： H01L33/325 ,  H01L33/08

摘要： In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions.

公开(公告)号：US06693302B2

公开(公告)日：2004-02-17

申请号：US10035001

申请日：2001-12-28

申请人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

发明人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

IPC分类号： H01L2715

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/12

摘要： In a semiconductor light-emitting element, an underlayer is made of a high crystallinity Al-including semiconducting nitride material of which the FWHM is 90 seconds or below in full width at half maximum of an X-ray rocking curve. A light-emitting layer is made of a semiconducting nitride material including it least one element selected from the group consisting of Al, Ga and In and containing at least one element selected from rare earth metal elements. The light-emitting layer can be omitted if at least one element selected from rare earth metal elements is incorporated in the underlayer.

摘要翻译： 在半导体发光元件中，底层由X射线摇摆曲线的半高宽度的FWHM为90秒以下的高结晶性Al的半导体氮化物材料构成。 发光层由包含选自Al，Ga和In中的至少一种元素的半导体氮化物材料制成，并且含有选自稀土金属元素中的至少一种元素。 如果从稀土金属元素中选择至少一种元素并入底层中，则可以省略发光层。

公开(公告)号：US06677708B2

公开(公告)日：2004-01-13

申请号：US10024664

申请日：2001-12-17

申请人： Yuji Hori ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

发明人： Yuji Hori ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

IPC分类号： H01J162

CPC分类号： H01L33/325 ,  H01L33/007 ,  H01L33/12

摘要： In a semi-conductor light-emitting element, an underlayer is made of a high crystallinity Al-including semi-conducting nitride material of which the FWHM is 90 second or below in X-ray rocking curve. Then, a light-emitting layer is made of a semi-conducting nitride material including at least one element selected from the group consisting of Al, Ga and In and containing at least one element selected from rare earth metal elements and transition metal elements.

摘要翻译： 在半导体发光元件中，底层由X射线摇摆曲线中FWHM为90秒以下的高结晶性Al-包含半导体氮化物材料制成。 然后，发光层由半导体氮化物材料制成，该半导体氮化物材料包括选自由Al，Ga和In组成的组中的至少一种元素，并含有至少一种选自稀土金属元素和过渡金属元素的元素。

公开(公告)号：US06534795B2

公开(公告)日：2003-03-18

申请号：US09994370

申请日：2001-11-27

申请人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

发明人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

IPC分类号： H01L3112

CPC分类号： H01L33/06 ,  H01L33/007 ,  H01L33/12 ,  H01L33/18

摘要： In a semiconductor light-emitting element, an underlayer is composed of a high crystallinity AlN layer having a FWHM in X-ray rocking curve of 90 seconds or below, and a first cladding layer is composed of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer.

公开(公告)号：US06943366B2

公开(公告)日：2005-09-13

申请号：US10813565

申请日：2004-03-30

申请人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

发明人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

IPC分类号： C23C14/06 ,  C23C16/34 ,  H01L21/205 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L29/06 ,  H01L31/109 ,  H01L31/336 ,  H01L31/72

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06

摘要： A group III nitride underlayer including at least Al, having a dislocation density of ≦1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ≧50% and in which a carrier density is ≧1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ≧50%.

摘要翻译： 包含至少Al的III族氮化物底层，其位错密度为<= 1×10 11 / cm 2，和（002）面X射线摇摆曲线半宽 在集合的基材上形成<= 200秒的值。 在III族氮化物底层上方形成p型半导体层组，并且包括III族氮化物，其中Ga含量相对于总III族元素> 50％，载流子密度> 1×10 ^{16/3/3 3。 在p型半导体层组上形成发光层，并且包含多个相互隔离的岛状晶体。 在发光层上形成n型半导体层组，并且包含相对于> = 50％的总III族元素的Ga含量。}

公开(公告)号：US07172956B2

公开(公告)日：2007-02-06

申请号：US11095450

申请日：2005-03-31

申请人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

发明人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

IPC分类号： H01L21/28 ,  H01L29/06

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06

摘要： A group III nitride underlayer including at least Al, having a dislocation density of ≦1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ≧50% and in which a carrier density is ≧1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ≧50%.

摘要翻译： 包含至少Al的III族氮化物底层，其位错密度为<= 1×10 11 / cm 2，和（002）面X射线摇摆曲线半宽 在集合的基材上形成<= 200秒的值。 在III族氮化物底层上方形成p型半导体层组，并且包括III族氮化物，其中Ga含量相对于总III族元素> 50％，载流子密度> 1×10 ^{16/3/3 3。 在p型半导体层组上形成发光层，并且包含多个相互隔离的岛状晶体。 在发光层上形成n型半导体层组，并且包含相对于> = 50％的总III族元素的Ga含量。}

公开(公告)号：US20050170539A1

公开(公告)日：2005-08-04

申请号：US11095450

申请日：2005-03-31

申请人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

发明人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

IPC分类号： C23C14/06 ,  C23C16/34 ,  H01L21/205 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L21/00

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06

摘要： A group III nitride underlayer including at least Al, having a dislocation density of ≦1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ≧50% and in which a carrier density is ≧1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ≧50%.

公开(公告)号：US5871580A

公开(公告)日：1999-02-16

申请号：US669493

申请日：1996-07-11

申请人： Toshiaki Asahi ,  Osamu Oda ,  Kenji Sato

发明人： Toshiaki Asahi ,  Osamu Oda ,  Kenji Sato

IPC分类号： C30B11/00 ,  C30B11/14 ,  C30B15/00 ,  C30B15/36 ,  C30B28/04

CPC分类号： C30B15/36 ,  C30B11/00 ,  C30B11/14 ,  C30B15/00 ,  C30B29/48

摘要： Using a thin plate seed crystal 10 having a different material from a bulk crystal to be grown and having a great diameter, before crystal growth is started, a temperature in the lower portion of a solution 12s in which material is solved into a solvent (or a melt 12m) is set to a higher temperature than the upper portion to cause convection so that the surface of seed crystal 10 is rinsed by the convection by keeping in the state for a predetermined period. Then, the crystal growth is started by the Bridgman method or gradient freezing method. In this case, a temperature gradient may be provided on the surface of seed crystal 10 by inclining the seed crystal 10 such that nucleation of crystal growth is generated at a position whose temperature is lowest on the surface of seed crystal 10 upon the start of crystal growth, or a small concave or protrusion portion may be formed in advance on the surface of seed crystal 10 such that nucleation of crystal growth is generated at the small concave or protrusion portion. Thereby, a bulk single crystal of good quality can be manufactured with a high yield.

摘要翻译： PCT No.PCT / JP95 / 02025 Sec。 371日期：1996年7月11日 102（e）日期1996年7月11日PCT提交1995年4月10日PCT公布。 第WO96 / 15297号公报 日期：1996年5月23日使用具有不同材质的薄板晶种10，待生长并具有大直径的晶体生长开始之前，溶液12s的下部的温度被溶解成 将溶剂（或熔体12m）设定为比上部更高的温度以引起对流，使得晶种10的表面通过保持在预定时间段内的对流而被冲洗。 然后，通过Bridgman方法或梯度冷冻法开始晶体生长。 在这种情况下，可以通过倾斜晶种10在晶种10的表面上提供温度梯度，使得在晶体开始时晶种10的表面的温度最低的位置处产生晶体生长成核 可以预先在晶种10的表面上形成生长或小的凹部或突出部，使得在小的凹部或突出部产生晶体生长的成核。 因此，可以高产率制造质量好的本体单晶。

公开(公告)号：US5454346A

公开(公告)日：1995-10-03

申请号：US194507

申请日：1994-02-10

申请人： Masayuki Uchida ,  Kenji Kohiro ,  Osamu Oda

发明人： Masayuki Uchida ,  Kenji Kohiro ,  Osamu Oda

IPC分类号： C30B11/06 ,  C30B11/00 ,  C30B27/00 ,  H01L21/208 ,  C30B11/08

CPC分类号： C30B29/40 ,  C30B11/00 ,  Y10T117/1092

摘要： A process for growing a multielement compound single crystal, includes the steps of placing a crucible holding a raw multielement compound of a predetermined set of composition ratios Y in a vertical crystal growing furnace having a heater, melting the raw multielement compound held in the crucible with the heater to produce a melt of the raw multielement compound in the crucible, controlling the output of the heater to grow a multielement compound single crystal of a predetermined set of composition ratios X from the melt so that the melt is solidified successively upwards from part of the melt in contact with the bottom of the crucible, and feeding to the melt as a solute at least one element of the raw multielement compound from above the level of the melt in the crucible so as to maintain the predetermined set of composition ratios X of the solute during growth of the multielement compound single crystal. The process can keep constant the composition of the grown multielement compound single crystal. The process is applicable to the growth of multielement compound semiconductor single crystals and multielement compound oxide single crystals.

摘要翻译： 用于生长多元素化合物单晶的方法包括以下步骤：将具有预定组成比Y的原料多元素化合物的坩埚放置在具有加热器的垂直晶体生长炉中，将保持在坩埚中的原料多元素化合物熔化， 加热器，以在坩埚中产生原料多元素化合物的熔体，控制加热器的输出以从熔体中生长具有预定组成比X的组合的多元素化合物单晶，使得熔体从部分 所述熔体与所述坩埚的底部接触，并且从所述坩埚中的所述熔体的高度上方以至少一种元素的原料多元素化合物作为溶质供给到所述熔体中，以保持所述熔融物的组成比X的预定组合 多元素化合物单晶生长过程中的溶质。 该方法可以使生长的多元素化合物单晶的组成保持恒定。 该方法适用于多元素化合物半导体单晶和多元素复合氧化物单晶的生长。