Correction system, method of correcting deflection distortion, program and method for manufacturing a semiconductor device
    11.
    发明申请
    Correction system, method of correcting deflection distortion, program and method for manufacturing a semiconductor device 失效
    校正系统,偏转失真校正方法,制造半导体器件的程序和方法

    公开(公告)号:US20050088099A1

    公开(公告)日:2005-04-28

    申请号:US10948555

    申请日:2004-09-24

    摘要: A method of correcting deflection distortion includes dividing a deflection area to which a charged-particle beam is deflected into equal initial blocks as an initial setting, calculating an initial aberration amount for each of the initial blocks generated when the charged-particle beam is deflected, dividing the deflection area into main blocks in accordance with a change rate of the initial aberration amount; calculating a main aberration amount for each of the main blocks generated when the charged-particle beam is deflected, and calculating a correction value correcting a deflection distortion based on the main aberration amount.

    摘要翻译: 校正偏转失真的方法包括将带电粒子束被偏转的偏转区域划分为相等的初始块作为初始设置,计算当带电粒子束偏转时产生的每个初始块的初始像差量, 根据初始像差量的变化率将偏转区域分成主块; 计算当带电粒子束偏转时产生的每个主要块的主像差量,并且计算校正基于主像差量的偏转失真的校正值。

    IMPRINT METHOD AND IMPRINT APPARATUS
    13.
    发明申请
    IMPRINT METHOD AND IMPRINT APPARATUS 有权
    IMPRINT方法和印刷装置

    公开(公告)号:US20110192300A1

    公开(公告)日:2011-08-11

    申请号:US13023225

    申请日:2011-02-08

    IPC分类号: B41F1/40 B41F9/01

    摘要: According to one embodiment, an imprint method is disclosed. The method can include forming a liquid droplet of a transfer material with a volume greater than a predetermined reference volume by dropping the transfer material onto a major surface of a processing substrate. The method can include reducing the volume of the liquid droplet to be less than the reference volume by volatilizing the liquid droplet. In addition, the method can include filling the transfer material into a recess provided in a transfer surface of a template by bringing the liquid droplet having the volume reduced to be less than the reference volume into contact with the transfer surface of the template.

    摘要翻译: 根据一个实施例,公开了压印方法。 该方法可以包括通过将转印材料落到处理衬底的主表面上来形成体积大于预定参考体积的转印材料的液滴。 该方法可以包括通过挥发液滴来将液滴的体积减小到小于参考体积。 此外,该方法可以包括通过使体积减小到小于参考体积的液滴与模板的转印表面接触来将转印材料填充到设置在模板的转印表面中的凹部中。

    IMPRINT METHOD
    14.
    发明申请
    IMPRINT METHOD 有权
    IMPRINT方法

    公开(公告)号:US20100078860A1

    公开(公告)日:2010-04-01

    申请号:US12563461

    申请日:2009-09-21

    IPC分类号: B29C35/08

    摘要: An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.

    摘要翻译: 压印方法包括将光固化树脂施加在待加工的基板上,所述基板包括施加有光固化树脂的第一和第二区域,使印模与光固化树脂接触,通过照射光固化树脂来固化光固化树脂 光固化树脂,其光通过压印模具,通过对施加在基板的区域上的光固化树脂进行预定处理产生气体,该区域至少包括第一区域,其中从光可固化 施加在第一区域上的树脂大于由第二区域的光固化树脂产生的气体的量,并且在产生气体之后通过从光固化树脂分离压印模具来形成图案。

    Electron beam writing method, electron beam writing apparatus and semiconductor device manufacturing method
    15.
    发明授权
    Electron beam writing method, electron beam writing apparatus and semiconductor device manufacturing method 失效
    电子束写入方法,电子束写入装置和半导体器件的制造方法

    公开(公告)号:US07368737B2

    公开(公告)日:2008-05-06

    申请号:US11409987

    申请日:2006-04-25

    IPC分类号: H01J37/08

    摘要: An electron beam writing method is disclosed, which includes preparing electron beam writing data structured from writing pattern data expressed by both data of VSB shots which are units of shaping beams at the time of carrying out writing a pattern and data of CP shots serving as bases of a repeating pattern, and CP aperture data into which identification numbers IDs and opening positions of respective openings of a CP aperture having openings for VSB shots and openings for CP shots are described, inputting the electron beam writing data to an electron beam writing apparatus, and expanding the electron beam writing data into data of the respective shots defined in the electron beam writing data, determining irradiation times of the respective expanded shots while correcting shot positions, and outputting control signals corresponding to shot data to repeat a shot of a desired pattern, by the electron beam writing apparatus.

    摘要翻译: 公开了一种电子束写入方法,其中包括准备电子束写入数据,该电子束写入数据由写入模式数据构成,该模式数据由作为执行写入模式时的整形波束的单元的VSB镜头的数据和用作基础的CP镜头的数据表示 描述了CP电子束写入数据到电子束写入装置的CP孔径数据,CP孔径数据ID和具有用于VSB镜头的开口的CP孔的各个开口的打开位置和CP镜头的开口位置, 并且将电子束写入数据扩展为在电子束写入数据中定义的各个镜头的数据,同时在校正镜头位置的同时确定各个扩展镜头的照射时间,并且输出对应于镜头数据的控制信号以重复所需图案的镜头 ,由电子束写入装置。

    Charged beam exposure apparatus having blanking aperture and basic figure aperture

    公开(公告)号:US07045801B2

    公开(公告)日:2006-05-16

    申请号:US11086589

    申请日:2005-03-23

    申请人: Tetsuro Nakasugi

    发明人: Tetsuro Nakasugi

    IPC分类号: H01J37/02 G21G5/00 G06F17/50

    摘要: Two or more-staged masks are prepared for a charged beam generating source. One mask has first aperture sections having rectangular apertures arranged into a lattice form, and electrodes which deflects a beam at respective first aperture sections. The other mask has a second aperture section having basic figure apertures for shaping the beam which passes or passed through the first aperture sections. Layout data of a semiconductor apparatus are divided into sizes of the basic figures which take reduction in exposure into consideration so as to be classified according to the basic figures. The beam which is shaped into a form of an overlapped portion of the divided layouts and the classified basic figure is emitted onto a sample.

    Charged beam exposure apparatus having blanking aperture and basic figure aperture
    19.
    发明授权
    Charged beam exposure apparatus having blanking aperture and basic figure aperture 失效
    充电光束曝光装置具有遮光孔和基本图形孔径

    公开(公告)号:US06914252B2

    公开(公告)日:2005-07-05

    申请号:US10763175

    申请日:2004-01-26

    申请人: Tetsuro Nakasugi

    发明人: Tetsuro Nakasugi

    摘要: Two or more-staged masks are prepared for a charged beam generating source. One mask has first aperture sections having rectangular apertures arranged into a lattice form, and electrodes which deflects a beam at respective first aperture sections. The other mask has a second aperture section having basic figure apertures for shaping the beam which passes or passed through the first aperture sections. Layout data of a semiconductor apparatus are divided into sizes of the basic figures which take reduction in exposure into consideration so as to be classified according to the basic figures. The beam which is shaped into a form of an overlapped portion of the divided layouts and the classified basic figure is emitted onto a sample.

    摘要翻译: 为带电束产生源准备了两个或多个阶段的掩模。 一个掩模具有布置成格子形状的矩形孔的第一孔径部分和在相应的第一孔径部分偏转梁的电极。 另一个掩模具有第二孔径部分,其具有用于使通过或穿过第一孔部分的梁的成形的基本图形孔。 将半导体装置的布局数据分为基准图的尺寸,这些尺寸考虑到曝光量的降低,以便根据基本图形进行分类。 成形为分割布置的重叠部分的形式的光束和分类的基本图形被发射到样品上。

    Charged particle beam exposure apparatus and exposure method

    公开(公告)号:US06818364B2

    公开(公告)日:2004-11-16

    申请号:US10843431

    申请日:2004-05-12

    申请人: Tetsuro Nakasugi

    发明人: Tetsuro Nakasugi

    IPC分类号: G03F900

    摘要: A charged particle beam exposure apparatus comprises a beam gun, a projection optics, a sample stage loaded with a sample wherein an image projected from the projection optics is to be formed, first marks are formed beforehand, and second marks are exposed to a charged particle beam with a first incident energy by the projection optics in the vicinity of the first marks, a detector detecting an electron signal from a region including the first and second marks, when the region is scanned with a second incident energy different from the first incident energy, a calculation circuit calculating a positional shift between the first and second marks from the detected signal, a correction circuit correcting a position of the first mark based on the calculated positional shift, and an exposure control circuit aligning a desired pattern based on the corrected position of the first mark.