公开(公告)号：US10979024B2

公开(公告)日：2021-04-13

申请号：US16135402

申请日：2018-09-19

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  Shawn R. Gibb ,  David M. Aichele

IPC: H03H9/60 ,  H03H9/54 ,  H03H9/00 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17 ,  H03H9/56 ,  H03H9/02 ,  H03H9/58 ,  H03H3/02 ,  H03H9/205

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US10855243B2

公开(公告)日：2020-12-01

申请号：US16140164

申请日：2018-09-24

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy

IPC: H03H3/02 ,  H04L5/08 ,  H04B1/44 ,  H04B1/04 ,  H04L5/14

Abstract: A mobile communication system. The system has a housing comprising an interior region and an exterior region and a processing device provided within an interior region of the housing. The system has an rf transmit module coupled to the processing device, and configured on a transmit path. The system has a transmit filter provided within the rf transmit module. In an example, the transmit filter comprises a diplexer filter comprising a single crystal acoustic resonator device.

公开(公告)号：US20200013948A1

公开(公告)日：2020-01-09

申请号：US16513143

申请日：2019-07-16

Applicant: Akoustis, Inc.

Inventor： Craig Moe ,  Jeffrey B. Shealy ,  Mary Winters

IPC: H01L41/316 ,  H03H3/02 ,  H01L41/187 ,  H01L41/053 ,  H01J37/34 ,  C23C14/02 ,  C23C14/34 ,  C23C14/06

Abstract: A method of forming a piezoelectric thin film can be provided by heating a substrate in a process chamber to a temperature between about 350 degrees Centigrade and about 850 degrees Centigrade to provide a sputtering temperature of the substrate and sputtering a Group III element from a target in the process chamber onto the substrate at the sputtering temperature to provide the piezoelectric thin film including a nitride of the Group III element on the substrate to have a crystallinity of less than about 1.0 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).

公开(公告)号：US20190020328A1

公开(公告)日：2019-01-17

申请号：US16135050

申请日：2018-09-19

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  Shawn R. Gibb ,  David M. Aichele

IPC: H03H9/54 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17 ,  H03H3/02 ,  H03F3/24 ,  H03F3/19 ,  H04B1/40

Abstract: A front end module (FEM) for a 5.6 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.6 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.6 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.6 GHz PA, a 5.6 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

公开(公告)号：US10110190B2

公开(公告)日：2018-10-23

申请号：US15341218

申请日：2016-11-02

Applicant: Akoustis, Inc.

Inventor： Ramakrishna Vetury ,  Alexander Y. Feldman ,  Michael D. Hodge ,  Art Geiss ,  Shawn R. Gibb ,  Mark D. Boomgarden ,  Michael P. Lewis ,  Pinal Patel ,  Jeffrey B. Shealy

IPC: B05D5/12 ,  H03H3/04 ,  H03H9/17 ,  H03H9/13 ,  H03H9/56

Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.

公开(公告)号：US11901880B2

公开(公告)日：2024-02-13

申请号：US17151552

申请日：2021-01-18

Applicant: Akoustis, Inc.

Inventor： Guillermo Moreno Granado ,  Rohan W. Houlden ,  David M. Aichele ,  Jeffrey B. Shealy

IPC: H03H9/70 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17 ,  H03H9/56

CPC classification number: H03H9/703 ,  H03H3/02 ,  H03H9/02031 ,  H03H9/0523 ,  H03H9/0533 ,  H03H9/105 ,  H03H9/173 ,  H03H9/175 ,  H03H9/176 ,  H03H9/562 ,  H03H9/564 ,  H03H9/566 ,  H03H2003/021 ,  H03H2003/025

Abstract: An RF diplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The diplexer can include a pair of filter circuits, each with a plurality of series resonator devices and shunt resonator devices. In the ladder topology, the series resonator devices are connected in series while shunt resonator devices are coupled in parallel to the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a plurality of series resonator devices, and a pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. A multiplexing device or inductor device can be configured to select between the signals coming through the first and second filter circuits.

公开(公告)号：US11804819B2

公开(公告)日：2023-10-31

申请号：US17694514

申请日：2022-03-14

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/54 ,  H03H9/56 ,  H10N30/06 ,  H10N30/072

CPC classification number: H03H9/173 ,  H03H3/02 ,  H03H9/02031 ,  H03H9/0514 ,  H03H9/0533 ,  H03H9/105 ,  H03H9/175 ,  H03H9/176 ,  H03H9/542 ,  H03H9/566 ,  H03H9/568 ,  H10N30/06 ,  H10N30/072 ,  H03H2003/021 ,  H03H2003/025 ,  Y10T29/42

Abstract: A method and structure for single crystal acoustic electronic device. The device includes a substrate having an enhancement layer formed overlying its surface region, a support layer formed overlying the enhancement layer, and an air cavity formed through a portion of the support layer. Single crystal piezoelectric material is formed overlying the air cavity and a portion of the enhancement layer. Also, a first electrode material coupled to the backside surface region of the crystal piezoelectric material and spatially configured within the cavity. A second electrode material is formed overlying the topside of the piezoelectric material, and a dielectric layer formed overlying the second electrode material. Further, one or more shunt layers can be formed around the perimeter of a resonator region of the device to connect the piezoelectric material to the enhancement layer.

公开(公告)号：US11736177B2

公开(公告)日：2023-08-22

申请号：US17544319

申请日：2021-12-07

Applicant: Akoustis Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  David M. Aichele

IPC: H04B1/02 ,  H04B7/08 ,  H04B1/00 ,  H03H3/02 ,  H03F1/26 ,  H03F3/195 ,  H03F3/72 ,  H03H9/02 ,  H03H9/17

CPC classification number: H04B7/0814 ,  H03F1/26 ,  H03F3/195 ,  H03F3/72 ,  H03H3/02 ,  H04B1/006 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2203/7239 ,  H03H9/02118 ,  H03H9/173 ,  H03H9/175 ,  H03H2003/023 ,  H03H2003/025

Abstract: A front end module (FEM) for a 5.6/6.6 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.6/6.6 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.6/6.6 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.6/6.6 GHz PA, a 5.6/6.6 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

公开(公告)号：US20230253943A1

公开(公告)日：2023-08-10

申请号：US18303163

申请日：2023-04-19

Applicant: Akoustis, Inc.

Inventor： Dae Ho KIM ,  Mary Winters ,  Ramakrishna Vetury ,  Jeffrey B. Shealy

IPC: H03H3/02 ,  H03H9/10 ,  H03H9/13 ,  H03H9/17 ,  H03H9/54 ,  H03H9/02 ,  H03H9/05 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/85 ,  H10N30/086 ,  H10N30/88 ,  H10N30/87 ,  H10N30/00

CPC classification number: H03H3/02 ,  H03H9/105 ,  H03H9/13 ,  H03H9/173 ,  H03H9/177 ,  H03H9/547 ,  H03H9/175 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/85 ,  H10N30/086 ,  H10N30/88 ,  H10N30/875 ,  H10N30/877 ,  H10N30/10513 ,  Y10T29/42 ,  H03H2003/025 ,  H03H2003/021

Abstract: A bulk acoustic wave (BAW) resonator includes a solidly mounted reflector, for example, a Bragg-type reflector, a piezoelectric layer, and first and second electrodes on first and second surfaces, respectively, of the piezoelectric layer. A filter device or filter system includes at least one BAW resonator. Related methods of fabrication include forming the BAW resonator.

公开(公告)号：US11683021B2

公开(公告)日：2023-06-20

申请号：US16707885

申请日：2019-12-09

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  David M. Aichele

IPC: H03H9/56 ,  H03H3/04 ,  H10N30/00

CPC classification number: H03H9/562 ,  H03H3/04 ,  H03H9/568 ,  H10N30/10516 ,  H03H2003/0428 ,  H03H2003/0435

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.