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    Counter based time compensation to reduce process shifting in reactive magnetron sputtering reactor
    12.
    发明授权
    Counter based time compensation to reduce process shifting in reactive magnetron sputtering reactor 有权

    公开(公告)号：US10400327B2

    公开(公告)日：2019-09-03

    申请号：US15007181

    申请日：2016-01-26

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Mohammad Kamruzzaman Chowdhury ,  Zhenbin Ge ,  Adolph Miller Allen

    IPC: C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34 ,  C23C14/52

    Abstract: A method of processing a substrate includes: sputtering target material for a first amount of time using a first plasma formed from an inert gas and a first amount of power; determining a first counter, based on a product of a flow rate of the inert gas, the first amount of power, and the first amount of time; sputtering a metal compound material for a second amount of time using a second plasma formed from a process gas comprising a reactive gas and an inert gas and a second amount of power; determining a second counter based on a product of a flow rate of the process gas, the second amount of power, and the second amount of time; determining a third counter; and depositing a metal compound layer onto a predetermined number of substrates, wherein a deposition time for each substrate is adjusted based on the third counter.

    SHIELD FOR A SUBSTRATE PROCESSING CHAMBER
    13.
    发明申请
    SHIELD FOR A SUBSTRATE PROCESSING CHAMBER 审中-公开

    公开(公告)号：US20190267220A1

    公开(公告)日：2019-08-29

    申请号：US16409757

    申请日：2019-05-10

    Applicant: Applied Materials, Inc.

    Inventor： Kathleen Scheible ,  Michael Allen Flanigan ,  Goichi Yoshidome ,  Adolph Miller Allen ,  Cristopher Pavloff

    IPC: H01J37/34 ,  H01L21/687 ,  C23C14/34 ,  C23C14/50

    Abstract: A shield encircles a sputtering target that faces a substrate support in a substrate processing chamber. The shield comprises an outer band having a diameter sized to encircle the sputtering target, the outer band having upper and bottom ends, and the upper end having a tapered surface extending radially outwardly and adjacent to the sputtering target. A base plate extends radially inward from the bottom end of the outer band. An inner band joined to the base plate at least partially surrounds a peripheral edge of a substrate support. The shield can also have a heat exchanger comprising a conduit with an inlet and outlet to flow heat exchange fluid therethrough.

    REDUCING SUBSTRATE SURFACE SCRATCHING USING MACHINE LEARNING
    18.
    发明申请
    REDUCING SUBSTRATE SURFACE SCRATCHING USING MACHINE LEARNING 有权

    公开(公告)号：US20220413452A1

    公开(公告)日：2022-12-29

    申请号：US17360652

    申请日：2021-06-28

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Kartik B. Shah ,  Satish Radhakrishnan ,  Karthik Ramanathan ,  Karthikeyan Balaraman ,  Adolph Miller Allen ,  Xinyuan Chong ,  Mitrabhanu Sahu ,  Wenjing Xu ,  Michael Sterling Jackson ,  Weize Hu ,  Feng Chen

    IPC: G05B13/02 ,  G05B13/04

    Abstract: Methods and systems for reducing substrate particle scratching using machine learning are provided. A machine learning model is trained to predict process recipe settings for a substrate temperature control process to be performed for a current substrate at a manufacturing system. First training data and second training data are generated for the machine learning model. The first training data includes historical data associated with prior process recipe settings for a prior substrate temperature control process performed for a prior substrate at a prior process chamber. The second training data is associated with a historical scratch profile of one or more surfaces of the prior substrate after performance of the prior substrate temperature control process according to the prior process recipe settings. The first training data and the second training data are provided to train the machine learning model to predict which process recipe settings for the substrate temperature control process to be performed for the current substrate correspond to a target scratch profile for one or more surfaces of the current substrate.

    RF power compensation to control film stress, density, resistivity, and/or uniformity through target life
    20.
    发明授权
    RF power compensation to control film stress, density, resistivity, and/or uniformity through target life 有权

    公开(公告)号：US10242873B2

    公开(公告)日：2019-03-26

    申请号：US14640881

    申请日：2015-03-06

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Adolph Miller Allen ,  Zhenbin Ge

    IPC: C23C14/35 ,  H01L21/033 ,  C23C14/06 ,  H01L21/285 ,  H01L21/311

    Abstract: Methods for depositing a metal-containing layer atop a substrate disposed in a PVD chamber are provided herein. In some embodiments, such a method includes: providing a plasma forming gas to a processing region of the PVD chamber; providing a first amount of RF power to a target assembly disposed opposite the substrate to form a plasma within the processing region of the PVD chamber; sputtering source material from the target assembly to deposit a metal-containing layer onto the substrate, wherein the source material is at a first erosion state; and increasing the first amount of RF power provided to the target assembly by a predetermined amount while sputtering the source material, wherein the predetermined amount is determined by a second amount of RF power provided to the target assembly to maintain a desired ionization rate of source material at a second erosion state.

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