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11.发明授权Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor 有权平面化的极紫外光刻印刷机及其制造和光刻系统公开(公告)号：US09354508B2
公开(公告)日：2016-05-31
申请号：US14139307
申请日：2013-12-23
Applicant: Applied Materials, Inc.
Inventor： Cara Beasley , Ralf Hofmann , Majeed Foad , Timothy Michaelson
CPC classification number: G03F1/24 , G03F7/70958
Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.
Abstract translation: 集成的极紫外（EUV）空白生产系统包括：用于将基板放置在真空中的真空室; 第一沉积系统，用于沉积在衬底上具有平坦化顶表面的平坦化层; 以及用于在平坦化层上沉积多层堆叠而不从真空中移除基板的第二沉积系统。 EUV空白在EUV光刻系统中包括：极紫外光源; 一个用于指示EUV来源的光的镜子; 用于放置具有平坦化层的EUV掩模空白的掩模版台; 以及用于放置晶片的晶片台。 EUV空白包括：底物; 平坦化层，用于补偿与衬底的表面相关的缺陷，平坦化层具有平坦的顶表面; 以及平坦化层上的多层堆叠。
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12.发明申请EXTREME ULTRAVIOLET CAPPING LAYER AND METHOD OF MANUFACTURING AND LITHOGRAPHY THEREOF 有权极端超紫外线吸收层及其制造方法及其研究方法公开(公告)号：US20160011344A1
公开(公告)日：2016-01-14
申请号：US14696322
申请日：2015-04-24
Applicant: Applied Materials, Inc.
Inventor： Cara Beasley , Ralf Hofmann , Majeed A. Foad , Rudy Beckstrom, III
CPC classification number: G02B5/0891 , C23C14/083 , C23C14/14 , C23C14/568 , C23C14/5853 , C23C14/5873 , C23C28/32 , C23C28/3455 , G02B1/14 , G02B5/0816 , G02B5/085 , G03F1/24 , G03F1/48 , G03F7/20 , G03F7/70316 , G03F7/70916 , G03F7/70958 , G21K1/062
Abstract: A method of manufacture of an extreme ultraviolet reflective element includes: providing a substrate; forming a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer and a second reflective layer for forming a Bragg reflector; and forming a capping layer on and over the multilayer stack, the capping layer formed from titanium oxide, ruthenium oxide, niobium oxide, ruthenium tungsten, ruthenium molybdenum, or ruthenium niobium, and the capping layer for protecting the multilayer stack by reducing oxidation and mechanical erosion.
Abstract translation: 一种制造极紫外反射元件的方法包括：提供基底; 在所述衬底上形成多层叠层，所述多层叠层包括多个具有第一反射层和用于形成布拉格反射器的第二反射层的反射层对; 在多层堆叠上形成覆盖层，由氧化钛，氧化钌，氧化铌，钌钨，钌钼或钌铌形成的覆盖层，以及通过还原氧化和机械保护多层叠层的覆盖层 侵蚀。
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13.发明申请公开(公告)号：US20140268080A1
公开(公告)日：2014-09-18
申请号：US14139307
申请日：2013-12-23
Applicant: APPLIED MATERIALS, INC.
Inventor： Cara Beasley , Ralf Hofmann , Majeed Foad , Timothy Michaelson
CPC classification number: G03F1/24 , G03F7/70958
Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.
Abstract translation: 集成的极紫外（EUV）空白生产系统包括：用于将基板放置在真空中的真空室; 第一沉积系统，用于沉积在衬底上具有平坦化顶表面的平坦化层; 以及用于在平坦化层上沉积多层堆叠而不从真空中移除基板的第二沉积系统。 EUV空白在EUV光刻系统中包括：极紫外光源; 一个用于指示EUV来源的光的镜子; 用于放置具有平坦化层的EUV掩模空白的掩模版台; 以及用于放置晶片的晶片台。 EUV空白包括：底物; 平坦化层，用于补偿与衬底的表面相关的缺陷，平坦化层具有平坦的顶表面; 以及平坦化层上的多层堆叠。
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公开(公告)号：US11493841B2
公开(公告)日：2022-11-08
申请号：US16720251
申请日：2019-12-19
Applicant: Applied Materials, Inc.
Inventor： Ralf Hofmann , Majeed A. Foad , Cara Beasley
Abstract: An extreme ultraviolet mask and method of manufacture thereof includes: providing a glass-ceramic block; forming a glass-ceramic substrate from the glass-ceramic block; and depositing a planarization layer on the glass-ceramic substrate.
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公开(公告)号：US10209613B2
公开(公告)日：2019-02-19
申请号：US15167740
申请日：2016-05-27
Applicant: Applied Materials, Inc.
Inventor： Cara Beasley , Ralf Hofmann , Majeed Foad , Timothy Michaelson
Abstract: An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.
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Patent Agency Ranking
16.发明授权公开(公告)号：US10012897B2
公开(公告)日：2018-07-03
申请号：US15405860
申请日：2017-01-13
Applicant: Applied Materials, Inc.
Inventor： Vinayak Vishwanath Hassan , Majeed Foad , Cara Beasley , Ralf Hofmann
Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.
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17.发明申请公开(公告)号：US20170160632A1
公开(公告)日：2017-06-08
申请号：US15438248
申请日：2017-02-21
Applicant: Applied Materials, Inc.
Inventor： Vinayak Vishwanath Hassan , Majeed A. Foad , Cara Beasley , Ralf Hofmann
CPC classification number: G03F1/24 , C23C14/042 , C23C16/042 , C23C28/00 , C23C28/322 , C23C28/34 , C23C28/42 , C23C28/44 , G03F1/22 , G03F1/54 , G03F7/70033
Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
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18.发明申请公开(公告)号：US20170131637A1
公开(公告)日：2017-05-11
申请号：US15410048
申请日：2017-01-19
Applicant: Applied Materials, Inc.
Inventor： Ralf Hofmann , Vinayak Vishwanath Hassan , Cara Beasley , Majeed A. Foad
CPC classification number: G03F7/702 , C23C14/0605 , C23C14/0635 , C23C14/14 , C23C16/44 , G02B1/14 , G02B5/085 , G02B5/0891 , G03F1/24 , G03F1/48 , G03F1/52 , G03F7/70033 , G03F7/70316 , G03F7/70916 , G03F7/70958 , G21K1/062 , H01J37/32798 , H01J37/3429
Abstract: An apparatus and method of manufacture of an extreme ultraviolet reflective element includes: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer formed from niobium or niobium carbide for forming a Bragg reflector; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
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19.发明申请公开(公告)号：US20170115555A1
公开(公告)日：2017-04-27
申请号：US15400482
申请日：2017-01-06
Applicant: Applied Materials, Inc.
Inventor： Ralf Hofmann , Cara Beasley , Majeed Foad
IPC: G03F1/22 , C23C16/458 , G03F7/16 , C23C14/50
Abstract: A processing system includes: a vacuum chamber; a plurality of processing sub-systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.
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20.发明授权Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof 有权具有多层叠层的极紫外反射元件及其制造方法公开(公告)号：US09581890B2
公开(公告)日：2017-02-28
申请号：US14696325
申请日：2015-04-24
Applicant: Applied Materials, Inc.
Inventor： Ralf Hofmann , Vinayak Vishwanath Hassan , Cara Beasley , Majeed A. Foad
CPC classification number: G03F7/702 , C23C14/0605 , C23C14/0635 , C23C14/14 , C23C16/44 , G02B1/14 , G02B5/085 , G02B5/0891 , G03F1/24 , G03F1/48 , G03F1/52 , G03F7/70033 , G03F7/70316 , G03F7/70916 , G03F7/70958 , G21K1/062 , H01J37/32798 , H01J37/3429
Abstract: An apparatus and method of manufacture of an extreme ultraviolet reflective element includes: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer formed from niobium or niobium carbide for forming a Bragg reflector; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
Abstract translation: 一种制造极紫外反射元件的设备和方法包括：基片; 所述多层叠层包括多个反射层对，所述反射层对具有由硅形成的第一反射层和由用于形成布拉格反射器的铌或碳化铌形成的第二反射层; 以及多层堆叠上和上方的覆盖层，用于通过减少氧化和机械侵蚀来保护多层堆叠。
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