公开(公告)号：US20220301913A1

公开(公告)日：2022-09-22

申请号：US17205867

申请日：2021-03-18

Applicant: Applied Materials, Inc.

Inventor： Sumanth Banda ,  Vladimir Knyazik ,  Stephen D. Prouty

IPC: H01L21/683 ,  H02N13/00 ,  H01L21/673

Abstract: Semiconductor substrate support assemblies may include an electrostatic chuck body having a substrate support surface. The electrostatic chuck body may define a plurality of protrusions extending from the substrate support surface. The assemblies may include an electrode embedded within the electrostatic chuck body. The electrode may define apertures through the electrode in line with the plurality of protrusions extending from the substrate support surface.

公开(公告)号：US20210276056A1

公开(公告)日：2021-09-09

申请号：US16811282

申请日：2020-03-06

Applicant: Applied Materials, Inc.

Inventor： Stephen D. Prouty ,  Martin Perez-Guzman ,  Sumanth Banda ,  Rajinder Dhindsa ,  Alvaro Garcia de Gorordo

IPC: B08B9/08 ,  H01L21/683 ,  H01L21/30 ,  B08B5/00

Abstract: Methods of semiconductor processing may include performing a process on a semiconductor substrate. The semiconductor substrate may be seated on a substrate support positioned within a processing region of a semiconductor processing chamber. The methods may include flowing a first backside gas through the substrate support at a first flow rate. The methods may include removing the semiconductor substrate from the processing region of the semiconductor processing chamber. The methods may include performing a plasma cleaning operation within the processing region of the semiconductor processing chamber. The methods may include flowing a second backside gas through the substrate support at a second flow rate. At least a portion of the second backside gas may flow into the processing region through accesses in the substrate support.

公开(公告)号：US10745805B2

公开(公告)日：2020-08-18

申请号：US15849277

申请日：2017-12-20

Applicant: Applied Materials, Inc.

Inventor： Vahid Firouzdor ,  Sumanth Banda ,  Rajinder Dhindsa ,  Daniel Byun ,  Dana Marie Lovell

IPC: B32B9/00 ,  C23C16/455 ,  C23C16/40 ,  C23C16/50 ,  C23C16/34 ,  C23C16/04 ,  H01J37/32

Abstract: Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a porous chamber component and onto pore walls within the porous chamber component using an atomic layer deposition (ALD) process. The porous chamber component may include a porous body comprising a plurality of pores within the porous body, the plurality of pores each comprising pore walls. The porous body is permeable to a gas. The plasma resistant coating may comprise a solid solution of Y2O3—ZrO2 and may have a thickness of about 5 nm to about 3 μm, and may protect the pore walls from erosion. The porous body with the plasma resistant coating remains permeable to the gas.

公开(公告)号：US20180337026A1

公开(公告)日：2018-11-22

申请号：US15982632

申请日：2018-05-17

Applicant: Applied Materials, Inc.

Inventor： Vahid Firouzdor ,  Sumanth Banda ,  Dana Lovell ,  Daniel Byun ,  Rajinder Dhindsa

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/40 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/32715 ,  C23C16/40 ,  C23C16/45536 ,  H01J37/32724 ,  H01J37/32807 ,  H01J2237/002 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/6833

Abstract: Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The chamber component may include an insulator material with good electrical properties. The dielectric constant of a coated insulator material may be within about ±5% of the dielectric constant of the insulator material without the plasma resistant coating.

公开(公告)号：US20140203526A1

公开(公告)日：2014-07-24

申请号：US14139116

申请日：2013-12-23

Applicant: Applied Materials, Inc.

Inventor： Sumanth Banda ,  Jennifer Y. Sun ,  Douglas A. Buchberger, JR. ,  Shane C. Nevil

IPC: B23Q3/06

CPC classification number: B28D5/0082 ,  H01L21/67103 ,  H01L21/6831 ,  H01L21/6875 ,  H01L21/68757 ,  Y10T29/49826 ,  Y10T279/23

Abstract: An unseasoned substrate support assembly includes a ceramic body and a thermally conductive base bonded to a lower surface of the ceramic body. The substrate support assembly further includes an upper surface of the ceramic body having a first portion proximate to a center of the upper surface of the ceramic body and having a first roughness profile and a second portion distal from the center of the upper surface of the ceramic body and having a second roughness profile with a lower roughness than the first roughness profile, wherein areas of the first and second portions are based on radial distances from the center of the ceramic body.

Abstract translation: 未干燥的基板支撑组件包括陶瓷体和结合到陶瓷体的下表面的导热基体。 衬底支撑组件还包括陶瓷体的上表面，其具有靠近陶瓷体的上表面的中心的第一部分，并且具有第一粗糙度轮廓和远离陶瓷上表面中心的第二部分 并且具有比第一粗糙度轮廓更低的粗糙度的第二粗糙度轮廓，其中第一和第二部分的区域基于距陶瓷体的中心的径向距离。

公开(公告)号：US20230264238A1

公开(公告)日：2023-08-24

申请号：US18138337

申请日：2023-04-24

Applicant: Applied Materials, Inc.

Inventor： Stephen D. Prouty ,  Martin Perez-Guzman ,  Sumanth Banda ,  Rajinder Dhindsa ,  Alvaro Garcia de Gorordo

IPC: B08B9/08 ,  H01L21/683 ,  B08B5/00 ,  H01L21/30

CPC classification number: B08B9/08 ,  B08B5/00 ,  H01L21/30 ,  H01L21/6833 ,  B08B2209/08

Abstract: Methods of semiconductor processing may include performing a process on a semiconductor substrate. The semiconductor substrate may be seated on a substrate support positioned within a processing region of a semiconductor processing chamber. The methods may include flowing a first backside gas through the substrate support at a first flow rate. The methods may include removing the semiconductor substrate from the processing region of the semiconductor processing chamber. The methods may include performing a plasma cleaning operation within the processing region of the semiconductor processing chamber. The methods may include flowing a second backside gas through the substrate support at a second flow rate. At least a portion of the second backside gas may flow into the processing region through accesses in the substrate support.

公开(公告)号：US11130142B2

公开(公告)日：2021-09-28

申请号：US16846000

申请日：2020-04-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Dmitry Lubomirsky ,  Vladimir Knyazik ,  Hamid Noorbakhsh ,  Jason Della Rosa ,  Zheng John Ye ,  Jennifer Y. Sun ,  Sumanth Banda

IPC: C23C16/40 ,  B05B1/00 ,  C23C16/455 ,  H01J37/32 ,  B05B1/18

Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a substrate processing chamber includes a body having a first side and an opposing second side; a gas distribution plate disposed proximate the second side of the body; and a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body, wherein the body is electrically coupled to the gas distribution plate through the clamp.

公开(公告)号：US10975469B2

公开(公告)日：2021-04-13

申请号：US15462718

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Vahid Firouzdor ,  Sumanth Banda ,  Rajinder Dhindsa ,  Daniel Byun ,  Dana Marie Lovell

IPC: B32B9/00 ,  C23C16/455 ,  C23C16/40 ,  C23C16/50 ,  C23C16/34 ,  C23C16/04 ,  H01J37/32

Abstract: Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a porous chamber component and onto pore walls within the porous chamber component using an atomic layer deposition (ALD) process. The porous chamber component may include a porous body comprising a plurality of pores within the porous body, the plurality of pores each comprising pore walls. The porous body is permeable to a gas. The plasma resistant coating may have a thickness of about 5 nm to about 3 μm, and may protect the pore walls from erosion. The porous body with the plasma resistant coating remains permeable to the gas.

公开(公告)号：US10570257B2

公开(公告)日：2020-02-25

申请号：US15352925

申请日：2016-11-16

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Sumanth Banda

IPC: C08G77/442 ,  C08G77/385 ,  C08L27/12 ,  C09J127/12 ,  C08L83/04

Abstract: A copolymerized high temperature bonding component that includes a first amount of an organofluorine polymer and a second amount of an organosilicon polymer which are chemically bound to each other to form a copolymer. The bonding component may have properties that allow it to be used for binding dissimilar materials.

公开(公告)号：US09850591B2

公开(公告)日：2017-12-26

申请号：US14762151

申请日：2014-03-03

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Sumanth Banda

IPC: C23C28/00 ,  C25D11/04 ,  C25D5/48 ,  C25D11/02 ,  C25D17/00 ,  C25D3/54

CPC classification number: C25D11/04 ,  C25D3/54 ,  C25D5/48 ,  C25D11/024 ,  C25D17/001

Abstract: To manufacture a chamber component for a processing chamber, an aluminum coating is formed on an article comprising impurities, the aluminum coating being substantially free from impurities.