公开(公告)号：US20230197406A1

公开(公告)日：2023-06-22

申请号：US18168421

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Igor Markovsky ,  Zhigang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32541 ,  H01J37/3266 ,  H01J37/32018 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32587 ,  H01J37/32596 ,  H01J37/32715 ,  H01J37/32834

Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

公开(公告)号：US20220119952A1

公开(公告)日：2022-04-21

申请号：US17074961

申请日：2020-10-20

Applicant: Applied Materials, Inc.

Inventor： Rana Howlader ,  Hang Yu ,  Madhu Santosh Kumar Mutyala ,  Zheng John Ye ,  Abhigyan Keshri ,  Sanjay Kamath ,  Daemian Raj Benjamin Raj ,  Deenesh Padhi

IPC: C23C16/50 ,  C23C16/40 ,  H01L21/02 ,  C23C16/458 ,  C23C16/455

Abstract: Exemplary deposition methods may include electrostatically chucking a semiconductor substrate at a first voltage within a processing region of a semiconductor processing chamber. The methods may include performing a deposition process. The deposition process may include forming a plasma within the processing region of the semiconductor processing chamber. The methods may include halting formation of the plasma within the semiconductor processing chamber. The methods may include, simultaneously with the halting, increasing the first voltage of electrostatic chucking to a second voltage. The methods may include purging the processing region of the semiconductor processing chamber.

公开(公告)号：US20220102179A1

公开(公告)日：2022-03-31

申请号：US17036048

申请日：2020-09-29

Applicant: Applied Materials, Inc.

Inventor： Zheng John Ye ,  Daemian Raj Benjamin Raj ,  Rana Howlader ,  Abhigyan Keshri ,  Sanjay G. Kamath ,  Dmitry A. Dzilno ,  Juan Carlos Rocha-Alvarez ,  Shailendra Srivastava ,  Kristopher R. Enslow ,  Xinhai Han ,  Deenesh Padhi ,  Edward P. Hammond

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32

Abstract: Exemplary semiconductor processing systems may include a processing chamber and an electrostatic chuck disposed at least partially within the processing chamber. The electrostatic chuck may include at least one electrode and a heater. A semiconductor processing system may include a power supply to provide a signal to the electrode to provide electrostatic force to secure a substrate to the electrostatic chuck. The system may also include a filter communicatively coupled between the power supply and the electrode. The filter is configured to remove or reduce noise introduced into the chucking signal by operating the heater while the electrostatic force on the substrate is maintained. The filter may include active circuitry, passive circuitry, or both, and may include an adjustment circuit to set the gain of the filter so that an output signal level from the filter corresponds to an input signal level for the filter.

公开(公告)号：US20210111000A1

公开(公告)日：2021-04-15

申请号：US17107029

申请日：2020-11-30

Applicant: Applied Materials, Inc.

Inventor： Zheng John Ye ,  Abdul Aziz Khaja ,  Amit Kumar Bansal ,  Kwangduk Douglas Lee ,  Xing Lin ,  Jianhua Zhou ,  Addepalli Sai Susmita ,  Juan Carlos Rocha-Alvarez

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/509 ,  H01L21/67 ,  H01L21/683

Abstract: Implementations of the present disclosure generally relate to methods and apparatus for generating and controlling plasma, for example RF filters, used with plasma chambers. In one implementation, a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber body, a powered gas distribution manifold enclosing a processing volume and a radio frequency (RF) filter. A pedestal having a substrate-supporting surface is disposed in the processing volume. A heating assembly comprising one or more heating elements is disposed within the pedestal for controlling a temperature profile of the substrate-supporting surface. A tuning assembly comprising a tuning electrode is disposed within the pedestal between the one or more heating elements and the substrate-supporting surface. The RF filter comprises an air core inductor, wherein at least one of the heating elements, the tuning electrode, and the gas distribution manifold is electrically coupled to the RF filter.

公开(公告)号：US20180053630A1

公开(公告)日：2018-02-22

申请号：US15793802

申请日：2017-10-25

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Igor Markovsky ,  Zhijang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32018 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32587 ,  H01J37/32596 ,  H01J37/3266 ,  H01J37/32715 ,  H01J37/32834

Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

公开(公告)号：US20230131809A1

公开(公告)日：2023-04-27

申请号：US18088310

申请日：2022-12-23

Applicant: Applied Materials, Inc.

Inventor： Zheng John Ye ,  Daemian Raj Benjamin Raj ,  Shailendra Srivastava ,  Nikhil Sudhindrarao Jorapur ,  Ndanka O. Mukuti ,  Dmitry A. Dzilno ,  Juan Carlos Rocha

IPC: H05H1/46 ,  H01J37/32

Abstract: A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.

公开(公告)号：US11569072B2

公开(公告)日：2023-01-31

申请号：US16391996

申请日：2019-04-23

Applicant: Applied Materials, Inc.

Inventor： Satya Thokachichu ,  Edward P. Hammond, IV ,  Viren Kalsekar ,  Zheng John Ye ,  Abdul Aziz Khaja ,  Vinay K. Prabhakar

IPC: H01J37/32 ,  H01L21/683 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02 ,  H01L21/285

Abstract: Embodiments of the present disclosure generally relate to substrate supports for process chambers and RF grounding configurations for use therewith. Methods of grounding RF current are also described. A chamber body at least partially defines a process volume therein. A first electrode is disposed in the process volume. A pedestal is disposed opposite the first electrode. A second electrode is disposed in the pedestal. An RF filter is coupled to the second electrode through a conductive rod. The RF filter includes a first capacitor coupled to the conductive rod and to ground. The RF filter also includes a first inductor coupled to a feedthrough box. The feedthrough box includes a second capacitor and a second inductor coupled in series. A direct current (DC) power supply for the second electrode is coupled between the second capacitor and the second inductor.

公开(公告)号：US20210159048A1

公开(公告)日：2021-05-27

申请号：US16694062

申请日：2019-11-25

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Xiaoquan Min ,  Zheng John Ye ,  Prashant Kumar Kulshreshtha ,  Vinay K. Prabhakar ,  Lu Xu ,  Kwangduk Douglas Lee

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  H01L21/02

Abstract: A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.

公开(公告)号：US10950477B2

公开(公告)日：2021-03-16

申请号：US15212695

申请日：2016-07-18

Applicant: Applied Materials, Inc.

Inventor： Xing Lin ,  Jianhua Zhou ,  Zheng John Ye ,  Jian Chen ,  Juan Carlos Rocha-Alvarez

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687 ,  H01J37/32

Abstract: Embodiments of the present disclosure provide an improved electrostatic chuck for supporting a substrate. The electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, a plurality of tabs projecting from the substrate supporting surface of the chuck body, wherein the tabs are disposed around the circumference of the chuck body, an electrode embedded within the chuck body, the electrode extending radially from a center of the chuck body to a region beyond the plurality of tabs, and an RF power source coupled to the electrode through a first electrical connection.

公开(公告)号：US10325800B2

公开(公告)日：2019-06-18

申请号：US14469573

申请日：2014-08-26

Applicant: Applied Materials, Inc.

Inventor： Prashant Kulshreshtha ,  Kwangduk Douglas Lee ,  Bok Hoen Kim ,  Zheng John Ye ,  Swayambhu Prasad Behera ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Jian J. Chen

IPC: H01L21/687 ,  H01L21/683

Abstract: Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.