Polishing endpoint detection apparatus
    15.
    发明授权
    Polishing endpoint detection apparatus 有权
    抛光端点检测装置

    公开(公告)号:US08568199B2

    公开(公告)日:2013-10-29

    申请号:US12897973

    申请日:2010-10-05

    IPC分类号: B24B49/00 B24B51/00

    CPC分类号: B24B37/013 B24B37/042

    摘要: Method and apparatus for detecting an accurate polishing endpoint of a substrate based on a change in polishing rate are provided. The method includes: applying a light to the surface of the substrate and receiving a reflected light from the substrate; obtaining a plurality of spectral profiles at predetermined time intervals, each spectral profile indicating reflection intensity at each wavelength of the reflected light; selecting at least one pair of spectral profiles, including a latest spectral profile, from the plurality of spectral profiles obtained; calculating a difference in the reflection intensity at a predetermined wavelength between the spectral profiles selected; determining an amount of change in the reflection intensity from the difference; and determining a polishing endpoint based on the amount of change.

    摘要翻译: 提供了用于基于抛光速率的变化来检测基板的精确抛光终点的方法和装置。 该方法包括:将光施加到衬底的表面并接收来自衬底的反射光; 以预定的时间间隔获得多个光谱轮廓,每个光谱轮廓指示反射光的每个波长处的反射强度; 从所获得的多个光谱分布中选择至少一对光谱分布,包括最新的光谱分布; 计算所选择的光谱轮廓之间的预定波长处的反射强度的差; 从所述差确定反射强度的变化量; 以及基于变化量确定抛光端点。

    Substrate treating method and substrate treating apparatus
    16.
    发明授权
    Substrate treating method and substrate treating apparatus 有权
    基板处理方法和基板处理装置

    公开(公告)号:US08152598B2

    公开(公告)日:2012-04-10

    申请号:US12266069

    申请日:2008-11-06

    IPC分类号: B24B41/00

    CPC分类号: B24B9/065 B24B21/002

    摘要: A substrate treating method includes rotating a substrate in a circumferential direction and polishing a peripheral portion of the substrate by pressing a polishing member to it using a pressing mechanism having a pressing pad. An angle of at least a part of the pressing pad with respect to an axial direction, in which the pressing mechanism makes the pressing pad press the peripheral portion of the substrate, is changed by an angle displacement mechanism which actively displaces the angle so that the polishing is performed depending on a surface to be polished in the peripheral portion.

    摘要翻译: 基板处理方法包括:使用具有按压垫的按压机构,将基板沿周向旋转并且对基板的周边部分进行冲压研磨部件。 按压垫的至少一部分相对于轴向的角度,其中按压机构使按压垫按压基板的周边部分,由角度位移机构改变,该角度位移机构主动地移动角度,使得 根据周边部分中要抛光的表面进行抛光。

    Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device
    18.
    发明申请
    Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device 有权
    有机薄膜的化学机械抛光方法及制造半导体器件的方法

    公开(公告)号:US20090068841A1

    公开(公告)日:2009-03-12

    申请号:US12289326

    申请日:2008-10-24

    IPC分类号: H01L21/304

    摘要: There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

    摘要翻译: 公开了一种有机膜的化学机械抛光方法,包括在半导体衬底上形成有机膜,将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触,并将浆料滴落到抛光垫上以抛光 所述有机膜,所述浆料选自第一浆料和第二浆料,所述第一浆料包含具有选自阴离子官能团,阳离子官能团,两性的官能团的树脂颗粒 官能团和非离子官能团,并且一次粒径为0.05-5μm,第一浆料的pH为2-8,第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。

    Method for manufacturing semiconductor device
    19.
    发明授权
    Method for manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US07416942B2

    公开(公告)日:2008-08-26

    申请号:US11708532

    申请日:2007-02-21

    摘要: A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.

    摘要翻译: 提供一种制造半导体器件的方法。 该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜,在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度,填充多个 的沟槽,去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜,选择性地生长第一硅膜上的第二硅膜,使用表现出pH为 13以下,含有磨粒和阳离子性表面活性剂,从而得到包含第一和第二硅膜的浮栅电极膜,在整个表面上形成电极间绝缘膜,并在电极间绝缘膜上形成控制栅极电极膜。

    Polishing method for semiconductor wafer and polishing apparatus for semiconductor wafer
    20.
    发明申请
    Polishing method for semiconductor wafer and polishing apparatus for semiconductor wafer 审中-公开
    半导体晶片抛光方法及半导体晶片抛光装置

    公开(公告)号:US20080113590A1

    公开(公告)日:2008-05-15

    申请号:US11984057

    申请日:2007-11-13

    IPC分类号: B24B7/04 B24B41/06

    CPC分类号: B24B9/065

    摘要: A polishing method for a semiconductor wafer having a polishing target surface at a periphery portion thereof is disclosed. The method includes pressing a polishing member against the polishing target surface along a circumference of the semiconductor wafer by a plurality of pressing portions while rotating the semiconductor wafer in a circumferential direction, thereby polishing the polishing target surface of the semiconductor wafer.

    摘要翻译: 公开了一种在其周边部分具有抛光对象表面的半导体晶片的抛光方法。 该方法包括:在半导体晶片沿圆周方向旋转的同时,通过多个按压部沿着半导体晶片的圆周将抛光构件压靠在抛光对象表面上,从而研磨半导体晶片的抛光对象表面。