公开(公告)号：US3585091A

公开(公告)日：1971-06-15

申请号：US3585091D

申请日：1967-12-08

Applicant: BELL TELEPHONE LABOR INC

Inventor： LEPSELTER MARTIN P

IPC: H01L21/306 ,  C23F1/00 ,  H01L21/00 ,  H01L21/311 ,  C23F1/02 ,  H01L7/00

CPC classification number: H01L21/31111 ,  C23F1/00 ,  H01L21/00

Abstract: THIS APPLICATION DISCLOSES A METHOD FOR SELECTIVELY ETCHING A THIN OXIDE OR NITRIDE LAYER ON A SEMICONDUCTIVE BODY. IN PARTICULAR, AN OXIDE OR NITRIDE LAYER IS SELECTIVELY ETCHED BY DEPOSITING A THIN LAYER OF AN ACTIVE METAL UPON IT, INDUCING A CHEMICAL REDUCTION REACTION BETWEEN THE

ACTIVE METAL AND THE OXIDE OR NITRIDE IN SELECTED AREAS, AND SELECTIVELY REMOVING THE MORE READILY DISSOLVED REACTED AREAS.

公开(公告)号：US3541403A

公开(公告)日：1970-11-17

申请号：US3541403D

申请日：1967-10-19

Applicant: BELL TELEPHONE LABOR INC

Inventor： LEPSELTER MARTIN P ,  SZE SIMON M

IPC: H01L21/00 ,  H01L23/482 ,  H01L23/485 ,  H01L29/00 ,  H01L29/872 ,  H01L31/00 ,  H01L9/00 ,  H01L15/00

CPC classification number: H01L29/00 ,  H01L21/00 ,  H01L23/482 ,  H01L23/485 ,  H01L29/872 ,  H01L31/00 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：US3426252A

公开(公告)日：1969-02-04

申请号：US3426252D

申请日：1966-05-03

Applicant: BELL TELEPHONE LABOR INC

Inventor： LEPSELTER MARTIN P

IPC: H01L21/00 ,  H01L23/485 ,  H01L3/00 ,  H01L5/02

CPC classification number: H01L21/00 ,  H01L23/485 ,  H01L24/01 ,  H01L2924/14 ,  H01L2924/00

公开(公告)号：US3274670A

公开(公告)日：1966-09-27

申请号：US44078265

申请日：1965-03-18

Applicant: BELL TELEPHONE LABOR INC

Inventor： LEPSELTER MARTIN P

IPC: H01L21/00 ,  H01L23/485

CPC classification number: H01L21/00 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S228/903 ,  H01L2924/00

公开(公告)号：US3652908A

公开(公告)日：1972-03-28

申请号：US3652908D

申请日：1970-09-21

Applicant: BELL TELEPHONE LABOR INC

Inventor： LEPSELTER MARTIN P ,  MACRAE ALFRED U

IPC: H01L21/00 ,  H01L23/485 ,  H01L29/00 ,  H01L29/45 ,  H01L11/14

CPC classification number: H01L29/456 ,  H01L21/00 ,  H01L23/485 ,  H01L29/00 ,  H01L2924/0002 ,  Y10S148/053 ,  Y10S148/139 ,  Y10S148/145 ,  H01L2924/00

Abstract: An insulated gate field-effect transistor is made which utilizes both Schottky barrier connections and ion-implanted zones. The resultant structure incorporates source and drain zones, which are formed by ion implantation and whose spacing is fixed by the gate electrode, and source and drain electrodes which make ohmic connection to the implanted source and drain zones and rectifying connections to unimplanted material.

公开(公告)号：US3617391A

公开(公告)日：1971-11-02

申请号：US3617391D

申请日：1969-09-15

Applicant: BELL TELEPHONE LABOR INC

Inventor： LEPSELTER MARTIN P ,  WAGGENER HERBERT A

IPC: H01L21/306 ,  H01L21/00 ,  H01L21/266 ,  H01L21/331 ,  H01L23/29 ,  H01L29/73 ,  H01L7/54

CPC classification number: H01L23/29 ,  H01L21/00 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/043 ,  Y10S148/106 ,  H01L2924/00

Abstract: A method for producing tucked under, passivated PN-junctions in semiconductor devices by ion implantation through a layered mask. Apertures in the upper layers of the mask are formed somewhat larger than the corresponding apertures in a first layer (contiguous with the surface of the semiconductor) so that an annulus of uncovered first layer remains around each exposed portion of semiconductor surface. Then the structure is subjected to a beam of dopant ions of sufficient energy to pass through the exposed annulus of uncovered first layer but of insufficient energy to pass through the area covered by the multiple layers; and a tucked under, passivated junction thereby is formed.

公开(公告)号：US3614480A

公开(公告)日：1971-10-19

申请号：US3614480D

申请日：1969-10-13

Applicant: BELL TELEPHONE LABOR INC

Inventor： BERGLUND CARL N ,  LEPSELTER MARTIN P

IPC: G05D23/24 ,  H01C7/04 ,  H01L23/34 ,  H01L27/02 ,  H03K17/14 ,  H05K1/00

CPC classification number: H03K17/14 ,  G05D23/1906 ,  G05D23/24 ,  H01C7/047 ,  H01L23/34 ,  H01L27/0211 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: Vanadium oxide exhibits a substantial and relatively abrupt change in conductivity as the temperature of the material is varied through a particular characteristic temperature (about 68* C.). In accordance with our invention, a vanadium oxide resistor is employed as a temperature-sensing element in the control circuit of a heater to stabilize the operating temperature of an electronic circuit at about 68* C. over a wide range of ambient temperatures.

公开(公告)号：US3585412A

公开(公告)日：1971-06-15

申请号：US3585412D

申请日：1968-08-27

Applicant: BELL TELEPHONE LABOR INC

Inventor： HODGES DAVID A ,  LEPSELTER MARTIN P

IPC: H01L27/04 ,  G11C11/411 ,  H01L21/00 ,  H01L21/822 ,  H01L27/07 ,  H01L29/00 ,  H01L29/47 ,  H01L29/872 ,  H03K3/012 ,  H03K3/286 ,  H03K3/26

CPC classification number: H03K3/286 ,  G11C11/4113 ,  H01L21/00 ,  H01L27/0766 ,  H01L29/00 ,  H03K3/012

Abstract: The reverse characteristic of Schottky barrier diodes provides easily fabricated, small area, high impedance elements for micropower circuits. Advantageously, the diodes are fabricated within semiconductive integrated circuit arrays by forming rhodium silicide on relatively high resistivity P-type silicon. Such diodes are particularly useful in the loads of flip-flops used as cells of a semiconductor memory.

公开(公告)号：US3411048A

公开(公告)日：1968-11-12

申请号：US45708365

申请日：1965-05-19

Applicant: BELL TELEPHONE LABOR INC

Inventor： LEPSELTER MARTIN P

IPC: H01L23/29 ,  H01L23/485 ,  H04R23/00

CPC classification number: H04R23/006 ,  H01L23/291 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：US3290127A

公开(公告)日：1966-12-06

申请号：US35566364

申请日：1964-03-30

Applicant: BELL TELEPHONE LABOR INC

Inventor： DAWON KAHNG ,  LEPSELTER MARTIN P

IPC: C23C26/00 ,  H01L21/00 ,  H01L23/485 ,  H01L29/00 ,  H01L29/872

CPC classification number: H01L29/872 ,  C23C26/00 ,  H01L21/00 ,  H01L23/485 ,  H01L29/00 ,  H01L2924/0002 ,  Y10S428/929 ,  Y10S428/934 ,  Y10S428/938 ,  Y10T428/12528 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/12778 ,  Y10T428/12812 ,  Y10T428/12889 ,  Y10T428/12896 ,  H01L2924/00