公开(公告)号：US12190628B2

公开(公告)日：2025-01-07

申请号：US17431636

申请日：2021-02-09

Applicant: BOE Technology Group Co., Ltd.

Inventor： Nianqi Yao ,  Lubin Shi

IPC: H01L27/144 ,  G06F21/32 ,  G06V40/13 ,  H01L27/146

Abstract: A fingerprint identification module, a method for manufacturing the fingerprint identification module, a display substrate and a display device are provided. The fingerprint identification module includes a TFT, a photosensitive sensor, and a connection electrode configured to connect the TFT to the photosensitive sensor; the TFT includes an active layer; the active layer and the connection electrode are formed through a same semiconductor layer pattern, the semiconductor layer pattern includes a first semiconductor pattern and a second semiconductor pattern, the first semiconductor pattern is used as the active layer, and the second semiconductor pattern is subjected to conductor-formation treatment and used as the connection electrode.

公开(公告)号：US12041825B2

公开(公告)日：2024-07-16

申请号：US17429935

申请日：2020-11-13

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jie Huang ,  Nianqi Yao ,  Xue Liu

IPC: H10K59/13 ,  H10K59/124 ,  H10K59/126 ,  H10K59/38 ,  H10K71/00 ,  H10K59/12

CPC classification number: H10K59/13 ,  H10K59/124 ,  H10K59/126 ,  H10K59/38 ,  H10K71/00 ,  H10K59/1201

Abstract: An organic electroluminescent display substrate is provided, which includes a base substrate, and a light-emitting unit and a light-sensing unit arranged on the base substrate, wherein the light-sensing unit is arranged on a light-emitting side of the light-emitting unit, and configured for sensing an intensity of light emitted from the light-emitting unit; a first planarization layer is arranged between the light-sensing unit and the light-emitting unit; the light-sensing unit comprises a first thin film transistor and a photosensitive sensor arranged sequentially in that order in a direction away from the base substrate, and a second planarization layer is arranged between the photosensitive sensor and the first thin film transistor. A display panel, a display device and a method for manufacturing the organic electroluminescent display substrate are further provided.

公开(公告)号：US11695079B2

公开(公告)日：2023-07-04

申请号：US17356167

申请日：2021-06-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Tianmin Zhou ,  Hehe Hu ,  Xiaochun Xu ,  Nianqi Yao ,  Dapeng Xue ,  Shuilang Dong

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/127 ,  H01L27/1225 ,  H01L29/66969

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

公开(公告)号：US11605739B2

公开(公告)日：2023-03-14

申请号：US16876344

申请日：2020-05-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Tianmin Zhou ,  Hehe Hu ,  Shuilang Dong ,  Wenhua Wang ,  Nianqi Yao

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66 ,  H01L21/02

Abstract: An oxide thin film transistor includes an oxide active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the oxide active layer perpendicular to a thickness direction of the oxide active layer, and is in contact with the oxide active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the oxide active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material.

公开(公告)号：US12300753B2

公开(公告)日：2025-05-13

申请号：US17780877

申请日：2021-05-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jie Huang ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jiayu He ,  Nianqi Yao ,  Feng Qu ,  Xiaochun Xu

IPC: H01L29/786 ,  H01L27/12

Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device arc provided. The thin film transistor includes an active layer including multiple oxide layers which includes a channel layer, a transition layer and a first barrier layer, the channel layer is an layer with a highest carrier mobility, the channel layer is a crystalline or amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer, the first barrier layer and the transition layer are both crystalline oxide layers; a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are larger than a band gap of the channel layer.

公开(公告)号：US12068355B2

公开(公告)日：2024-08-20

申请号：US17410677

申请日：2021-08-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jie Huang ,  Nianqi Yao ,  Kun Zhao

IPC: H01L27/146 ,  H01L27/12

CPC classification number: H01L27/14643 ,  H01L27/1214 ,  H01L27/14689

Abstract: An array substrate includes a substrate, the array substrate includes a display region and a detection region. And the detection region includes a thin film transistor located on the substrate and a photodiode located on one side of the thin film transistor away from the substrate, and the array substrate further includes a first inorganic protective layer, an organic protective layer and a second inorganic protective layer located between the thin film transistor and the photodiode. And the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are stacked in sequence in a direction away from the substrate, and an orthographic projection of the photodiode on the substrate is within the range of the orthographic projection of the organic protective layer on the substrate.

公开(公告)号：US20240260185A1

公开(公告)日：2024-08-01

申请号：US18017902

申请日：2022-02-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiaxiang Zhang ,  Nianqi Yao ,  Ke Wang

IPC: H05K1/11 ,  H01L21/48 ,  H01L23/498 ,  H01L25/075 ,  H01L25/16 ,  H01L27/12 ,  H05K1/09 ,  H05K1/18 ,  H05K3/06

CPC classification number: H05K1/111 ,  H01L21/4846 ,  H01L23/49838 ,  H01L27/124 ,  H05K3/067 ,  H01L23/49866 ,  H01L25/0753 ,  H01L25/167 ,  H05K1/09 ,  H05K1/181 ,  H05K2201/10106 ,  H05K2201/10151

Abstract: A circuit board and a method for manufacturing the circuit board, a functional backplate, a backlight module, a display apparatus, and a display panel are provided. The circuit board includes: a base substrate; a wire arranged on the base substrate, where the wire includes a first conductive layer; and at least one insulating layer arranged on a side of the first conductive layer away from the base substrate, where the at least one insulating layer covers the first conductive layer. The first conductive layer includes a first stacked structure on a side away from the base substrate and a second stacked structure proximate to the base substrate, and the first stacked structure includes at least an etch stop layer covering the second stacked structure.

公开(公告)号：US20240212564A1

公开(公告)日：2024-06-27

申请号：US17913258

申请日：2021-11-04

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lizhong Wang ,  Ce Ning ,  Yunping Di ,  Binbin Tong ,  Chengfu Xu ,  Dapeng Xue ,  Shuilang Dong ,  Nianqi Yao

IPC: G09G3/20

CPC classification number: G09G3/2092 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/0267 ,  G09G2310/062 ,  G09G2310/08

Abstract: A display substrate, a manufacturing method thereof and a display apparatus are provided. In the present disclosure, a first transistor group with oxide semiconductor as an active layer material is disposed on a side of a second transistor group with polysilicon as an active layer material away from the base, and an area enclosed by orthographic projections of the transistors in the first transistor group on the base is overlapped with an area enclosed by orthographic projections of the transistors in the second transistor group on the base. Stable performance of the transistors included can be ensured in a manufacturing process of the first transistor group and the second transistor group located in different layers, and at the same time, an area occupied by the driving circuit can be reduced so as to decrease a frame width of a display apparatus or improve resolution of the display apparatus.

公开(公告)号：US20230091604A1

公开(公告)日：2023-03-23

申请号：US17611156

申请日：2021-01-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie Huang ,  Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Fengjuan Liu ,  Nianqi Yao ,  Kun Zhao ,  Tianmin Zhou ,  Jiushi Wang ,  Zhongpeng Tian

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

公开(公告)号：US20230015871A1

公开(公告)日：2023-01-19

申请号：US17780877

申请日：2021-05-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jie Huang ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jiayu He ,  Nianqi Yao ,  Feng Qu ,  Xiaochun Xu

IPC: H01L29/786 ,  H01L27/12

Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device arc provided. The thin film transistor includes an active layer including multiple oxide layers which includes a channel layer, a transition layer and a first barrier layer, the channel layer is an layer with a highest carrier mobility, the channel layer is a crystalline or amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer, the first barrier layer and the transition layer are both crystalline oxide layers; a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are larger than a band gap of the channel layer.