公开(公告)号：US12233410B2

公开(公告)日：2025-02-25

申请号：US17292277

申请日：2020-01-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaochen Ma ,  Ce Ning ,  Chao Li ,  Jiayu He ,  Xueyuan Zhou ,  Xiao Zhang ,  Xin Gu ,  Zhengliang Li ,  Guangcai Yuan

IPC: B01L3/00

Abstract: A microfluidic channel backplane includes a base, and a plurality of microfluidic channels, a sample-adding channel and an enrichment channel that are disposed above the base. Each microfluidic channel of the plurality of microfluidic channels includes a first end and a second end. The sample-adding channel is communicated with first ends of the plurality of microfluidic channels. The enrichment channel includes a first enrichment sub-channel and a second enrichment sub-channel. The first enrichment sub-channel is communicated with second ends of the plurality of microfluidic channels, and one end of the second enrichment sub-channel is communicated with the first enrichment sub-channel.

公开(公告)号：US12183824B2

公开(公告)日：2024-12-31

申请号：US17611156

申请日：2021-01-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie Huang ,  Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Fengjuan Liu ,  Nianqi Yao ,  Kun Zhao ,  Tianmin Zhou ,  Jiushi Wang ,  Zhongpeng Tian

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  G02F1/1368

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

公开(公告)号：US10467591B2

公开(公告)日：2019-11-05

申请号：US15521976

申请日：2016-10-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wusheng Li ,  Zhengliang Li ,  Zhen Liu

IPC: G01N21/00 ,  G06Q10/10 ,  G06F8/65

Abstract: A system and a method for detecting a substrate and a manufacturing device are disclosed. The detection system includes: an emitting unit and a control unit; wherein the emitting unit provides a first reference light and a second reference light, the first reference light propagates to the control unit, the second reference light is modulated by the substrate to generate a test light, the test light propagates to the control unit; the control unit obtains and compares a power of the first reference light and a power of the test light so as to determine whether a foreign matter is present on a surface of the substrate. The detection system can prevent foreign matters such as photoresist from influencing other manufacturing devices such as cleaning and deposition devices, which is beneficial to the maintenance and service of the manufacturing devices.

公开(公告)号：US10186617B2

公开(公告)日：2019-01-22

申请号：US15718778

申请日：2017-09-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jincheng Gao ,  Bin Zhang ,  Xiaolong He ,  Xiangchun Kong ,  Qi Yao ,  Zhanfeng Cao ,  Zhengliang Li

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L27/12

Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.

公开(公告)号：US09812472B2

公开(公告)日：2017-11-07

申请号：US15308991

申请日：2016-01-25

Applicant: BOE Technology Group Co., Ltd.

Inventor： Qi Yao ,  Feng Zhang ,  Zhanfeng Cao ,  Xiaolong He ,  Bin Zhang ,  Zhengliang Li

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/45

CPC classification number: H01L27/1288 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A preparation method of an oxide thin-film transistor is disclosed, and this method includes: forming a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode; forming of the active layer, the source electrode and the drain electrode includes: sequentially forming an oxide semiconductor thin film and a source-drain electrode metal thin film on a base substrate, an entire surface of the oxide semiconductor thin film being in direct contact with the source-drain electrode metal thin film; and patterning the oxide semiconductor thin film and the source-drain electrode metal thin film with a dual-tone mask so as to form the active layer, the source electrode and the drain electrode by a single patterning process.

公开(公告)号：US20160336458A1

公开(公告)日：2016-11-17

申请号：US15149587

申请日：2016-05-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jincheng Gao ,  Bin Zhang ,  Xiaolong He ,  Xiangchun Kong ,  Qi Yao ,  Zhanfeng Cao ,  Zhengliang Li

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.

Abstract translation: 公开了薄膜晶体管，其制造方法，阵列基板和显示装置。 制造薄膜晶体管的方法包括：形成半导体层; 在作为保护层的半导体层上形成不与酸溶液反应的导电膜; 在保护层上形成源电极和漏电极; 以及去除所述源电极和所述漏极之间的所述保护层的一部分，以暴露所述源电极和所述漏电极之间的所述半导体层的一部分。

公开(公告)号：US09245661B2

公开(公告)日：2016-01-26

申请号：US14313502

申请日：2014-06-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Bin Zhang ,  Zhengliang Li ,  Zhen Liu ,  Luke Ding ,  Zhanfeng Cao ,  Guanbao Hui

IPC: H01L27/14 ,  H01B1/02 ,  B32B15/01 ,  H01L27/12 ,  H01L21/285

CPC classification number: H01B1/02 ,  B32B15/01 ,  C23C14/14 ,  C23C14/3457 ,  H01L21/28506 ,  H01L21/2855 ,  H01L23/53228 ,  H01L27/124 ,  H01L27/1262 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A conductive film, a method for producing the same and an array substrate comprising the same are provided, so that copper atoms can be efficiently prevented from diffusing into an adjacent semiconductor layer or interlaminated insulation film. The conductive film comprises a base film made of copper or copper alloy, in which hydrogen and/or carbon atoms are distributed.

Abstract translation: 提供导电膜，其制造方法和包括该导电膜的阵列基板，从而可以有效地防止铜原子扩散到相邻的半导体层或层间绝缘膜中。 导电膜包括其中分布有氢和/或碳原子的由铜或铜合金制成的基膜。

公开(公告)号：US20150243399A1

公开(公告)日：2015-08-27

申请号：US14313502

申请日：2014-06-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Bin Zhang ,  Zhengliang Li ,  Zhen Liu ,  Luke Ding ,  Zhanfeng Cao ,  Guanbao Hui

IPC: H01B1/02 ,  H01L27/12 ,  H01L21/285 ,  B32B15/01

CPC classification number: H01B1/02 ,  B32B15/01 ,  C23C14/14 ,  C23C14/3457 ,  H01L21/28506 ,  H01L21/2855 ,  H01L23/53228 ,  H01L27/124 ,  H01L27/1262 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A conductive film, a method for producing the same and an array substrate comprising the same are provided, so that copper atoms can be efficiently prevented from diffusing into an adjacent semiconductor layer or interlaminated insulation film. The conductive film comprises a base film made of copper or copper alloy, in which hydrogen and/or carbon atoms are distributed.

Abstract translation: 提供导电膜，其制造方法和包括该导电膜的阵列基板，从而可以有效地防止铜原子扩散到相邻的半导体层或层间绝缘膜中。 导电膜包括其中分布有氢和/或碳原子的由铜或铜合金制成的基膜。

公开(公告)号：US12272754B2

公开(公告)日：2025-04-08

申请号：US17761549

申请日：2021-05-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jie Huang ,  Nianqi Yao ,  Zhi Wang ,  Feng Guan

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66

Abstract: A thin film transistor, a manufacturing method thereof, a display substrate, and a display device are provided. The thin film transistor includes: a substrate, an active layer, a gate, a source and a drain. The active layer is arranged on the substrate and formed as a grid, including silicon nanowires extending along a first direction, the active layer includes source and drain regions oppositely arranged along the first direction, and a channel region located therebetween. The gate is arranged on the substrate, and an orthographic projection of the gate onto the substrate overlaps with orthographic projections for silicon nanowires in the channel region onto the substrate. The source and drain are arranged on the substrate, the source contacts silicon nanowires in the source region, and the drain contacts silicon nanowires in the drain region.

公开(公告)号：US12226772B2

公开(公告)日：2025-02-18

申请号：US17432580

申请日：2021-01-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaochen Ma ,  Ce Ning ,  Guangcai Yuan ,  Xin Gu ,  Zhengliang Li

IPC: B01L3/00 ,  C23C14/04 ,  C23C14/34

Abstract: A biochip and a method for manufacturing the same are provided. The biochip includes: a guide layer; a channel layer on the guide layer, wherein the channel layer has therein a plurality of first channels extending in a first direction; a plurality of second channels extending in a second direction, wherein each of the plurality of second channels is in communication with the plurality of first channels, the plurality of second channels are in a layer where the channel layer is located, or in a layer where the channel layer and the guide layer are located; an encapsulation cover plate on a side of the channel layer distal to the guide layer; and a driving unit configured to drive biomolecules to move.