公开(公告)号：US20240234658A1

公开(公告)日：2024-07-11

申请号：US17927792

申请日：2021-12-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiayu HE ,  Yan QU ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI ,  Qi QI

IPC: H01L33/62 ,  H01L25/075 ,  H01L25/16 ,  H01L27/12

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/124

Abstract: A wiring board includes a substrate, conductive pads and at least one protective layer group. The conductive pads are disposed on the substrate. The at least one protective layer group is disposed on a side of the conductive pads away from the substrate; a protective layer group includes an oxidation protective layer and a palladium alloy layer that are stacked, and the oxidation protective layer is closer to the substrate than the palladium alloy layer. A material of the oxidation protective layer includes a nickel-based alloy.

公开(公告)号：US20240204004A1

公开(公告)日：2024-06-20

申请号：US17910133

申请日：2021-12-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Hehe HU ,  Yan QU ,  Jiayu HE ,  Kun ZHAO ,  Jie HUANG ,  Zhengliang LI ,  Ce NING ,  Dongfang WANG ,  Fengjuan LIU ,  Nianqi YAO ,  Feifei LI ,  Shunhang ZHANG ,  Yunsik IM ,  Liping LEI

IPC: H01L27/12

CPC classification number: H01L27/124 ,  H01L27/1259 ,  H01L27/1222

Abstract: Provided are a thin-film transistor and a manufacturing method thereof, and a display substrate, belonging to the technical field of thin-film transistors. The thin-film transistor includes: a base substrate; a gate electrode on the base substrate; an active layer on a side of the gate electrode away from the base substrate, an orthographic projection of the active layer onto the base substrate overlapping with an orthographic projection of the gate electrode onto the base substrate; and a first electrode and a second electrode on a side of the active layer away from the base substrate, the first electrode being one of a source electrode and a drain electrode, and the second electrode being the other of the source electrode and the drain electrode. Specifically the active layer includes a channel region corresponding to a gap between the first electrode and the second electrode, and a width direction of the channel region is perpendicular or substantially perpendicular to an extending direction of the gate electrode. According to the embodiments of the present disclosure, the illumination stability of the thin-film transistor can be improved without reducing the transmittance of the substrate.

公开(公告)号：US20240188373A1

公开(公告)日：2024-06-06

申请号：US17795243

申请日：2021-09-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI ,  Liping LEI ,  Qi QI

IPC: H10K59/65 ,  H10K59/12 ,  H10K59/121 ,  H10K59/80 ,  H10K71/00

CPC classification number: H10K59/65 ,  H10K59/1201 ,  H10K59/1213 ,  H10K59/874 ,  H10K71/00

Abstract: Provided is a display substrate including a substrate and a plurality of light emitting units and a plurality of light detection units located on the substrate, At least one light emitting unit includes a light emitting element and a pixel circuit connected to the light emitting element, and at least one light detection unit includes an optical sensing element and a light emitting detecting circuit connected to the optical sensing element. At least one inorganic hydrogen barrier layer is arranged on one side of the optical sensing element close to the substrate. The light emitting element has a first light emitting region and a second light emitting region, the first light emitting region of the light emitting element emits light from a side away from the substrate, and the second light emitting region of the light emitting element emits light from a side close to the substrate.

公开(公告)号：US20240128327A1

公开(公告)日：2024-04-18

申请号：US18016899

申请日：2022-02-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guangcai YUAN ,  Hehe HU ,  Fengjuan LIU ,  Ce NING ,  Zhengliang LI

IPC: H01L29/24 ,  H01L29/786

CPC classification number: H01L29/24 ,  H01L29/7869

Abstract: The present disclosure has disclosed a semiconductor material, light-emitting device, display panel and display device. The semiconductor material comprises: at least two of an oxide of a first element, an oxide of a second element, an oxide of a third element, an oxide of a fourth element and a compound of fifth element, and comprises at least the oxide of the first element and the compound of the fifth element; the first element comprises at least one of In, Zn, Sn, Cd, Tl and Pb; the second element comprises at least one of Ta, Ga, W, Ba, V, Hf and Nb; the third element comprises at least one of Sn, Zr, Cr and Si; the fourth element comprises at least one of Zn, Al, Sn, Ta, Hf, Zr and Ti; and the compound of the fifth element comprises MxA.

公开(公告)号：US20230268444A1

公开(公告)日：2023-08-24

申请号：US17922034

申请日：2021-11-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  South China University of Technology

Inventor： Guangcai YUAN ,  Linfeng LAN ,  Fengjuan LIU ,  Ce NING ,  Hehe HU ,  Fei WANG ,  Junbiao PENG

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/66969

Abstract: A metal oxide semiconductor material includes a semiconductor base material and at least one kind of rare earth compound doped in the semiconductor base material, Each kind of rare earth compound has a general formula represented as (MFD)aAb, where in s the general formula (MFD)aAb, MFD is an element selected from rare earth elements capable of undergoing f-d transition and/or charge transfer transition, A is selected from elements capable of stretching a wavelength range of an absorption spectrum of MFD capable of undergoing the f-d transition and/or the charge transfer transition towards red light into a visible light range, a is a number of the element MFD in the general formula (MFD)aAb, and b is a number of the element A in the general formula (MFD)aAb.

公开(公告)号：US20230110228A1

公开(公告)日：2023-04-13

申请号：US17905246

申请日：2020-03-19

Applicant: Fuzhou BOE Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Dapeng XUE ,  Zheng LIU ,  Hehe HU ,  Lizhong WANG ,  Shuilang DONG ,  Nianqi YAO

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/45 ,  H01L29/40

Abstract: Disclosed are a thin-film transistor and a preparation method therefor, and a display substrate and a display panel. The thin-film transistor includes: a base substrate; an active layer located on the base substrate; and a source-drain electrode which is located on the side of the active layer facing away from the base substrate, and includes an electrode layer and a protective layer, where the material of the electrode layer includes a first metal element; the protective layer covers the surface of the side of the electrode layer facing away from the base substrate, and a side face of the electrode layer; and the material of the protective layer is an oxide of the first metal element.

公开(公告)号：US20200220020A1

公开(公告)日：2020-07-09

申请号：US16608549

申请日：2019-04-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wenlin ZHANG ,  Jianming SUN ,  Hehe HU

IPC: H01L29/786 ,  H01L27/12

Abstract: The present disclosure relates to a thin-film transistor, a method for preparing the same, and a display substrate. The method for preparing the thin-film transistor includes the steps of forming a source electrode, a drain electrode, and an active layer, in which the step of forming the source electrode, the drain electrode, and the active layer includes: forming a first thin film from a first metal oxide material in an atmosphere of a first oxygen content; and forming a second thin film from a second metal oxide material in an atmosphere of a second oxygen content, in which the first thin film is configured to form the active layer, the second thin film is configured to form a source electrode and a drain electrode, and the second oxygen content is less than the first oxygen content.

公开(公告)号：US20190233299A1

公开(公告)日：2019-08-01

申请号：US16344000

申请日：2018-09-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wenlin ZHANG ,  Ce NING ,  Hehe HU ,  Zhengliang LI

IPC: C01G15/00 ,  H01L29/786

CPC classification number: C01G15/006 ,  C01P2002/72 ,  C01P2004/61 ,  H01L29/7869

Abstract: An oxide semiconductor composition for use in thin film transistors includes indium oxide, zinc oxide, and an oxide including a doping element of scandium, such as scandium oxide. A molar percentage of the indium oxide can be larger than approximately 50%. The oxide semiconductor composition can have a formula of In2Sc2ZnO7. Manufacturing of the oxide semiconductor composition can include: mixing indium oxide powder, scandium oxide powder, and zinc oxide powder to thereby obtain an oxide shaped object; and sintering the oxide shaped object to form the oxide semiconductor composition. A thin-film transistor for use in a semiconductor device, such as a display apparatus, can include the oxide semiconductor composition, and can thereby have improved mobility of the oxide semiconductor due to the reduced oxygen vacancy therein.

公开(公告)号：US20150370168A1

公开(公告)日：2015-12-24

申请号：US14428143

申请日：2014-08-15

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jianguo WANG ,  Hehe HU

IPC: G03F7/075 ,  G03F7/20 ,  G03F7/32 ,  G03F7/16

CPC classification number: G03F7/0757 ,  G03F7/0382 ,  G03F7/0755 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

Abstract: Disclosed is a negative photoresist comprising 1 to 90 parts of hydroxyl-containing or carboxyl-containing film-forming resin, 1 to 99 parts of silicon-containing vinyl ether monomer, 0.1 to 15 parts by weigh of a crosslinking agent, and an organic solvent capable of dissolving the aforesaid substances. Disclosed is also methods of preparing and using the negative photoresist.

Abstract translation: 公开了含有含羟基或含羧基的成膜树脂1〜90份，含硅乙烯基醚单体1〜99份，交联剂0.1〜15重量份和有机溶剂 能够溶解上述物质。 还公开了制备和使用负性光致抗蚀剂的方法。

公开(公告)号：US20250098212A1

公开(公告)日：2025-03-20

申请号：US18963664

申请日：2024-11-28

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jie HUANG ,  Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Fengjuan LIU ,  Nianqi YAO ,  Kun ZHAO ,  Tianmin ZHOU ,  Jiushi WANG ,  Zhongpeng TIAN

IPC: H01L29/786 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include at least one of indium, gallium and zinc. Praseodymium is doped into the channel layer. And, in the channel layer, a number density of praseodymium atoms in the channel layer gradually decreases with a distance from the first protection layer.