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20 条记录 (耗时 0.067 秒)

    System and Method for Inducing Far Field Transparency with Negative Index Materials
    11.
    发明申请
    System and Method for Inducing Far Field Transparency with Negative Index Materials 有权
    用负指数材料诱导远场透明度的系统和方法

    公开(公告)号：US20100020415A1

    公开(公告)日：2010-01-28

    申请号：US12239313

    申请日：2008-09-26

    申请人： Ronald J. Tonucci

    发明人： Ronald J. Tonucci

    IPC分类号： G02B3/02 ,  H01S3/08 ,  G02B3/00

    CPC分类号： G02B3/02 ,  G02B3/04 ,  G02B27/0081 ,  H01Q15/0086 ,  H01Q15/02

    摘要： A lens system with a lens formed of a material having a negative index of refraction in an operational frequency range, a first surface of the material having a convex hyperbolic curvature, and a second surface of the material having a concave circular curvature. A lens system can include two of these lenses, arranged with the concave circular surfaces facing each other. Far field radiation arriving at the hyperbolic surface of the the first lens is refracted by the lens material toward the circular surface, out of the first lens in a direction parallel to the original radiation direction, and into the circular surface of the second lens, where it is refracted toward the hyperbolic surface of the second lens, and exits the second lens in a direction parallel to the original direction. The lens material can have a tunable or fixed negative refractive index and/or resonant frequency.

    摘要翻译： 一种透镜系统，其具有由在工作频率范围内具有负折射率的材料形成的透镜，所述材料的第一表面具有凸双曲线曲率，以及所述材料的第二表面具有凹的圆弧曲率。 透镜系统可以包括这些透镜中的两个，其中凹形圆形表面彼此面对。 到达第一透镜的双曲面的远场辐射被透镜材料朝平行于原始辐射方向的圆形表面折射出第一透镜，并进入第二透镜的圆形表面，其中 它朝向第二透镜的双曲面折射，并沿平行于原始方向的方向离开第二透镜。 透镜材料可以具有可调谐或固定的负折射率和/或谐振频率。

    HIGH TEMPERATURE HIGH VOLTAGE CABLE
    12.
    发明申请
    HIGH TEMPERATURE HIGH VOLTAGE CABLE 失效
    高温高压电缆

    公开(公告)号：US20090200061A1

    公开(公告)日：2009-08-13

    申请号：US12368584

    申请日：2009-02-10

    申请人： Ronald J. Tonucci

    发明人： Ronald J. Tonucci

    IPC分类号： H01B7/29

    CPC分类号： H01B7/292

    摘要： A cable having one or more conductive members and one or more strength members. Each conductive member has a metal microwire having an outer diameter and an inorganic cladding having an inner diameter. The microwire is positioned within the cladding, and the outer diameter of the microwire is at least about 2 microns less then the inner diameter of the cladding. Each strength member has a plurality of inorganic fibers surrounding the conductive members or an inorganic rod. The conductive members are conductive while applying a voltage of 5000 V to the conductive members and while exposing the cable to a temperature of about 1000° C.

    摘要翻译： 具有一个或多个导电构件和一个或多个强度构件的电缆。 每个导电构件具有外径的金属微丝和具有内径的无机包层。 微线定位在包层内，并且微丝的外径比包层的内径小至少约2微米。 每个强度构件具有围绕导电构件或无机棒的多个无机纤维。 导电构件在向导电构件施加5000V的电压的同时导电，同时将电缆暴露于约1000℃的温度。

    Photoconductive Metamaterials with Tunable Index of Refraction and Frequency
    13.
    发明申请
    Photoconductive Metamaterials with Tunable Index of Refraction and Frequency 失效
    具有可调谐折射率和频率的光导材料

    公开(公告)号：US20090009853A1

    公开(公告)日：2009-01-08

    申请号：US11559535

    申请日：2006-11-14

    申请人： Ronald J. Tonucci

    发明人： Ronald J. Tonucci

    IPC分类号： G02F1/29

    CPC分类号： G02F1/015 ,  G02F2001/0151 ,  G02F2202/12 ,  G02F2202/30 ,  G02F2203/15 ,  H01Q15/0066

    摘要： Materials and structures whose index of refraction can be tuned over a broad range of negative and positive values by applying above band-gap photons to a structure with a strip line element, a split ring resonator element, and a substrate, at least one of which is a photoconductive semiconductor material. Methods for switching between positive and negative values of n include applying above band-gap photons to different numbers of elements. In another embodiment, a structure includes a photoconductive semiconductor wafer, the wafer operable to receive above band-gap photons at an excitation frequency in an excitation pattern on a surface of the wafer, the excitation patterns generating an effective negative index of refraction. Methods for switching between positive and negative values of n include projecting different numbers of elements on the wafer. The resonant frequency of the structure is tuned by changing the size of the split ring resonator excitation patterns.

    摘要翻译： 通过将上述带隙光子应用于具有带状线元件，分裂环谐振器元件和基底的结构，可以在宽的范围的负值和正值上调整折射率的材料和结构，其中至少一个 是光电导半导体材料。 用于在正值和负值之间切换n的方法包括将上述带隙光子应用于不同数量的元件。 在另一个实施例中，结构包括光电导半导体晶片，晶片可操作以在晶片的表面上以激发图案的激发频率接收上述带隙光子，该激励图案产生有效的负折射率。 用于在正值和负值之间切换n的方法包括在晶片上投射不同数量的元件。 通过改变开环谐振器激励模式的大小来调整结构的谐振频率。

    Nanoscale X-Y-Z translation of nanochannel glass replica-based masks for making complex structures during patterning
    14.
    发明授权
    Nanoscale X-Y-Z translation of nanochannel glass replica-based masks for making complex structures during patterning 失效
    纳米尺度的X-Y-Z平移纳米通道玻璃复制掩模，用于在图案化过程中形成复杂的结构

    公开(公告)号：US6087274A

    公开(公告)日：2000-07-11

    申请号：US34310

    申请日：1998-03-03

    申请人： Ronald J. Tonucci ,  Douglas H. Pearson

    发明人： Ronald J. Tonucci ,  Douglas H. Pearson

    IPC分类号： C03C17/00 ,  C03C15/00

    CPC分类号： C03C17/001 ,  Y10S438/943 ,  Y10S438/945 ,  Y10S438/947

    摘要： The present invention is a process for making complex structures with nanoscale resolution in parallel by placing an NCG replica-based mask (or other suitable mask) in close proximity to a substrate and controlling, with nanoscale accuracy and precision, the relative movement of the mask and substrate while sequentially or concurrently carrying out a patterning process or processes. Another aspect of the invention is a diamond film with submicron and/or nanoscale features, that can be made by the method of the invention.

    摘要翻译： 本发明是通过将基于NCG复制的掩模（或其他合适的掩模）放置在靠近衬底并且以纳米尺度的精度和精度控制掩模的相对运动来平行地制备具有纳米尺度分辨率的复杂结构的方法 和衬底，同时顺序或同时进行图案化工艺或工艺。 本发明的另一方面是具有亚微米和/或纳米尺度特征的金刚石膜，其可以通过本发明的方法制备。

    Real Time Detection of Molecules, Cells and Particles Using Photonic Bandgap Structures
    18.
    发明申请
    Real Time Detection of Molecules, Cells and Particles Using Photonic Bandgap Structures 审中-公开
    使用光子带隙结构的分子，细胞和粒子的实时检测

    公开(公告)号：US20090305230A1

    公开(公告)日：2009-12-10

    申请号：US12226036

    申请日：2007-04-06

    申请人： Kenneth L. Beattie ,  Ronald J. Tonucci

    发明人： Kenneth L. Beattie ,  Ronald J. Tonucci

    IPC分类号： C12Q1/70 ,  G02B6/00 ,  C12Q1/68 ,  G01N33/53 ,  G01N33/567 ,  C12Q1/02 ,  C12M1/34 ,  G01N21/00

    CPC分类号： G01N21/77 ,  G01N21/05 ,  G01N33/54373 ,  G01N2021/0346 ,  G01N2021/7783 ,  Y02A50/60

    摘要： Provided herein is a photonic bandgap (PBG) detector effective to detect inorganic molecules, organic biomolecules or biopolymers, cells, subcellular organelles, and particles. The PBG detector utilizes photonic crystals having a binding agent attached to channel surfaces comprising the crystals to selectively bind a molecule, cell or particle of interest so that an increase in light transmission is detectably induced within the photonic bandgap upon binding. Also provided are methods of optically detectiing an analyte and of identifying the presence of a cell or a particle in a biological sample.

    摘要翻译： 本文提供了有效检测无机分子，有机生物分子或生物聚合物，细胞，亚细胞细胞器和颗粒的光子带隙（PBG）检测器。 PBG检测器利用光子晶体，其具有连接到包含晶体的通道表面的结合剂，以选择性地结合感兴趣的分子，细胞或颗粒，使得在结合时在光子带隙内可检测地诱导光透射的增加。 还提供了光学检测分析物和鉴定生物样品中细胞或颗粒的存在的方法。

    Nanochannel glass matrix used in making mesoscopic structures
    20.
    发明授权
    Nanochannel glass matrix used in making mesoscopic structures 失效
    用于制造介观结构的纳米通道玻璃基质

    公开(公告)号：US5264722A

    公开(公告)日：1993-11-23

    申请号：US897638

    申请日：1992-06-12

    申请人： Ronald J. Tonucci ,  Brian L. Justus

    发明人： Ronald J. Tonucci ,  Brian L. Justus

    IPC分类号： C03C14/00 ,  H01L27/00 ,  H01L29/15 ,  H01L27/12 ,  C03C17/00 ,  C03C27/00 ,  H01L45/00

    CPC分类号： C03C14/00 ,  B82Y10/00 ,  H01L27/00 ,  H01L29/15 ,  B01J2219/0052 ,  C03C2214/30 ,  Y10S148/05 ,  Y10S438/962

    摘要： The present invention provides a method of forming a semiconductor device mprising the steps of:forming a glass block of an acid inert glass having acid etchable glass rods extending therethrough, the acid etchable glass rods having an average diameter of less than 1 micron;partially etching one end of the acid etchable rods surface of the glass block to form cavities in the glass block on one surface thereof having an average diameter of less than 1 micron;depositing material(s) in the cavities to form a semiconductor device.The present invention also provides a method for forming a semiconductor device in which the acid etchable glass rods are completely etched and the deposition material(s) is deposited to fill the nanochannels formed by the etching.The present invention also provides semiconductor devices made by these methods.

    摘要翻译： 本发明提供一种形成半导体器件的方法，包括以下步骤：形成具有延伸穿过其中的酸蚀玻璃棒的酸性惰性玻璃的玻璃块，所述酸蚀刻玻璃棒的平均直径小于1微米; 部分蚀刻玻璃块的酸蚀刻棒表面的一端，以在玻璃块的一个表面上形成平均直径小于1微米的空腔; 在空腔中沉积材料以形成半导体器件。 本发明还提供了一种用于形成半导体器件的方法，其中可酸腐蚀的玻璃棒被完全蚀刻并且沉积材料被沉积以填充由蚀刻形成的纳米通道。 本发明还提供了通过这些方法制造的半导体器件。