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公开(公告)号：US09236518B2
公开(公告)日：2016-01-12
申请号：US14128833
申请日：2012-12-03
Inventor： Changjiang Yan , Zhenyu Xie , Shaoying Xu , Tiansheng Li
IPC: H01L29/04 , H01L31/105 , H01L27/146 , H01L27/12 , H01L29/66 , H01L29/786 , H01L31/0256
CPC classification number: H01L31/1055 , H01L27/1214 , H01L27/14603 , H01L27/14616 , H01L27/14632 , H01L27/14687 , H01L27/14689 , H01L27/14692 , H01L29/66765 , H01L29/78669 , H01L31/0256
Abstract: A sensor and its fabrication method are provided, the sensor includes: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element including a TFT device and a photodiode sensing device, wherein a channel region of the TFT device is inverted and the source and drain electrodes are positioned between the active layer and the gate electrode. The sensor reduces the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect-free rate.
Abstract translation: 提供了一种传感器及其制造方法，该传感器包括：基底基板，一组栅极线和一组布置为彼此交叉的数据线;以及多个感测元件，其排列成阵列并由 栅极线和数据线组，每个感测元件包括TFT器件和光电二极管感测器件，其中TFT器件的沟道区域被反转，并且源极和漏极电极位于有源层和栅电极之间。 该传感器减少了掩模的数量和生产成本，简化了生产过程，从而显着提高了生产能力和无缺陷率。
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公开(公告)号：US20150179689A1
公开(公告)日：2015-06-25
申请号：US14356004
申请日：2013-06-20
Inventor： Zhenyu Xie , Shaoying Xu , Tiansheng Li , Changjiang Yan
IPC: H01L27/144 , H01L31/0203 , H01L31/20 , H01L31/0216
CPC classification number: H01L27/1443 , G02F1/13318 , G02F1/133512 , G02F2001/133388 , H01L27/1446 , H01L29/78633 , H01L29/78678 , H01L31/0203 , H01L31/02164 , H01L31/202
Abstract: An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes a display area and a non-display area. The non-display area includes at least one light sensor each including a light blocking layer on a substrate and for blocking light emitted from a backlight source; an insulating layer on the light blocking layer; a amorphous silicon layer on the insulating layer at a location corresponding to the light blocking layer and for sensing external light; an input electrode and an output electrode on the amorphous silicon layer and not contacting each other. The input electrode and the output electrode both contact the amorphous silicon layer, a part of the amorphous silicon layer between the input electrode and the output electrode forms a conductive channel. The output electrode is connected with a photoelectric detection circuit for inputting drain current generated by the conductive channel into the photoelectric detection circuit.
Abstract translation: 提供阵列基板，其制造方法和显示装置。 阵列基板包括显示区域和非显示区域。 非显示区域包括至少一个光传感器，每个光传感器包括在基板上的遮光层，并用于阻挡从背光源发射的光; 遮光层上的绝缘层; 在对应于遮光层的位置处的绝缘层上的非晶硅层，用于感测外部光; 非晶硅层上的输入电极和输出电极，并且彼此不接触。 输入电极和输出电极均接触非晶硅层，在输入电极和输出电极之间的非晶硅层的一部分形成导电通道。 输出电极与光电检测电路连接，用于将由导电通道产生的漏极电流输入光电检测电路。
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13.发明授权公开(公告)号：US10128272B2
公开(公告)日：2018-11-13
申请号：US14421279
申请日：2014-04-28
Inventor： Jiaxiang Zhang , Jian Guo , Xiaohui Jiang , Changjiang Yan
IPC: H01L27/12 , H01L21/84 , G02F1/1335 , G02F1/1343
Abstract: Disclosed are a TFT array substrate, a method for fabricating the same and a display device. The TFT array substrate includes a plurality of pixel units, each of the plurality of pixel units includes a common electrode (9). The common electrode (9), is comb-shaped, and includes a plurality of strip electrodes and a plurality of slits. Each of the strip electrodes is configured for reflecting light incident on the strip electrode, and each of the slits is configured for transmitting light incident on the slit. As the comb-shaped common electrode with both a reflective region and a transmissive region is formed through a single patterning process, the fabrication process is simplified and the fabrication cost and difficulty are reduced.
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公开(公告)号：US09818605B2
公开(公告)日：2017-11-14
申请号：US14387390
申请日：2013-07-02
Inventor： Changjiang Yan , Tiansheng Li , Shaoying Xu , Zhenyu Xie , Xu Chen
CPC classification number: H01L21/02554 , H01L21/02472 , H01L21/02483 , H01L21/02565 , H01L21/02617 , H01L27/1225 , H01L29/66969 , H01L29/78693
Abstract: An Oxide TFT, a preparation method thereof, an array substrate and a display device are described. The method includes forming a gate electrode, a gate insulating layer, a channel layer, a barrier layer, as well as a source electrode and a drain electrode on a substrate; the channel layer is formed by depositing an amorphous oxide semiconductor film in a first mixed gas containing H2, Ar and O2. By depositing a channel layer in a first mixed gas containing H2, Ar and O2, the hysteresis phenomenon of the TFT can be mitigated effectively to improve the display quality of the display panel.
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15.发明授权Array substrate, display device and manufacturing method of the array substrate 有权阵列基板，显示装置及阵列基板的制造方法公开(公告)号：US09543324B2
公开(公告)日：2017-01-10
申请号：US14386651
申请日：2013-12-03
Inventor： Changjiang Yan , Jiaxiang Zhang , Jian Guo , Zhenyu Xie , Xu Chen
IPC: H01L29/10 , H01L27/12 , H01L29/66 , H01L29/786
CPC classification number: H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1288 , H01L29/66765 , H01L29/78669
Abstract: An array substrate, a display device and a manufacturing method of the array substrate. The array substrate includes: a base substrate (1) and a plurality of pixel units located on the base substrate (1), each of the pixel units including a thin film transistor unit. The thin film transistor unit includes: a gate electrode located on the base substrate (1), a gate insulating layer (3) located on the gate electrode, an active layer (4) located on the gate insulating layer (3) and opposed to the gate electrode in position, an ohmic layer (5) located on the active layer (4), a source electrode (6a) and a drain electrode (6b) that are located on the ohmic layer (5) and a resin passivation layer (8) that are located on the source electrode (6a) and the drain electrode (6b) and covers the substrate.
Abstract translation: 阵列基板，显示装置以及阵列基板的制造方法。 阵列基板包括：基底基板（1）和位于基底基板（1）上的多个像素单元，每个像素单元包括薄膜晶体管单元。 所述薄膜晶体管单元包括：位于所述基底基板（1）上的栅极电极，位于所述栅电极上的栅极绝缘层（3），位于所述栅极绝缘层（3）上的有源层（4） 位于位置的栅电极，位于有源层（4）上的欧姆层（5），位于欧姆层（5）上的源极（6a）和漏电极（6b）和树脂钝化层 8），其位于源电极（6a）和漏电极（6b）上并覆盖基板。
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Patent Agency Ranking
公开(公告)号：US20160259190A1
公开(公告)日：2016-09-08
申请号：US14348359
申请日：2013-11-27
Inventor： Changjiang Yan , Jing Li , Tiansheng Li , Zhenyu Xie , Xu Chen
IPC: G02F1/1368 , G02F1/1362 , H01L27/12 , G02F1/1343
CPC classification number: G02F1/1368 , G02F1/13439 , G02F1/136209 , H01L27/1248 , H01L27/1259 , H01L29/78633
Abstract: The present invention discloses an array substrate and a manufacturing method thereof, and a display device, and relates to the field of display technology, in order to reduce the leakage current of the TFT, improve the stability of the TFT, and enhance the display effect of the display device. The array substrate comprises: a transparent substrate, a TFT on the transparent substrate, a first passivation layer covering the TFT, a first transparent electrode on a surface of the first passivation layer, and a light blocking structure for preventing light transmission provided at a position, corresponding to a channel of the TFT, on a side of the TFT away from the transparent substrate.
Abstract translation: 本发明公开了阵列基板及其制造方法以及显示装置，涉及显示技术领域，为了降低TFT的漏电流，提高TFT的稳定性，提高显示效果 的显示装置。 阵列基板包括：透明基板，透明基板上的TFT，覆盖TFT的第一钝化层，第一钝化层的表面上的第一透明电极，以及用于防止透光的遮光结构， 对应于TFT的沟道，在TFT的远离透明基板的一侧。
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公开(公告)号：US20140063503A1
公开(公告)日：2014-03-06
申请号：US13984342
申请日：2013-03-12
Inventor： Tiansheng Li , Changjiang Yan , Shaoying Xu , Zhenyu Xie , Xiaohui Jiang
CPC classification number: H01L22/10 , G01N21/59 , H01L21/67253 , H01L22/12 , H01L22/26 , H01L2924/0002 , H01L2924/00
Abstract: An etching time detection means and an etching time detection method for an etching device. The detection means comprises: a light wave emitter fixed on one substrate of the etching device, a light wave receiver fixed on another substrate and opposed to the light wave emitter, a detection system communicated with the light wave emitter and the light wave receiver for receiving light intensity signals and calculating etching time. With the detection means and the detection method, the automatical detection of etching time can be achieved and the deviation caused by visual observation can be effectively avoided.
Abstract translation: 用于蚀刻装置的蚀刻时间检测装置和蚀刻时间检测方法。 检测装置包括：固定在蚀刻装置的一个基板上的光波发射器，固定在另一基板上并与光波发射器相对的光波接收器，与光波发射器通信的检测系统和用于接收的光波接收器 光强信号和计算蚀刻时间。 利用检测装置和检测方法，可以实现蚀刻时间的自动检测，并且可以有效地避免由视觉观察引起的偏差。
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18.发明授权公开(公告)号：US10217774B2
公开(公告)日：2019-02-26
申请号：US15625436
申请日：2017-06-16
Inventor： Zhenyu Xie , Shaoying Xu , Tiansheng Li , Changjiang Yan , Jing Li , Zongmin Tian
IPC: H01L27/12 , H01L29/786 , H01L29/66
Abstract: The technical disclosure relates to a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a base substrate, a gate electrode, an active layer, source/drain electrodes, a pixel electrode and one or more insulating layers, wherein at least one of the insulating layers comprises a bottom insulating sub-layer and a top insulating sub-layer, the top insulating sub-layer having a hydrogen content higher than that of the bottom insulating sub-layer.
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公开(公告)号：US10002889B2
公开(公告)日：2018-06-19
申请号：US14443777
申请日：2014-10-28
Inventor： Jiaxiang Zhang , Xiaohui Jiang , Changjiang Yan
IPC: H01L27/12 , H01L29/786 , H01L29/423 , H01L29/417 , H01L21/77
CPC classification number: H01L27/1248 , H01L21/77 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/1262 , H01L27/1274 , H01L29/41733 , H01L29/42384 , H01L29/78633 , H01L29/78645
Abstract: The present invention provides a low-temperature polysilicon thin film transistor array substrate and a method of fabricating the same, and a display device. The array substrate comprises: a substrate; a polysilicon active layer provided on the substrate; a first insulation layer provided on the active layer; a plurality of gates and a gate line provided on the first insulation layer; a second insulation layer provided on the gates; a source, a drain, a data line and a pixel electrode electrically connected with the drain, which are provided on the second insulation layer, the source covers the plurality of gates. The plurality of gates are provided directly below the source, so that the leakage current is reduced and the aperture ratio of panel is improved.
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公开(公告)号：US09972546B2
公开(公告)日：2018-05-15
申请号：US13984342
申请日：2013-03-12
Inventor： Tiansheng Li , Changjiang Yan , Shaoying Xu , Zhenyu Xie , Xiaohui Jiang
CPC classification number: H01L22/10 , G01N21/59 , H01L21/67253 , H01L22/12 , H01L22/26 , H01L2924/0002 , H01L2924/00
Abstract: An etching time detection means and an etching time detection method for an etching device. The detection means comprises: a light wave emitter fixed on one substrate of the etching device, a light wave receiver fixed on another substrate and opposed to the light wave emitter, a detection system communicated with the light wave emitter and the light wave receiver for receiving light intensity signals and calculating etching time. With the detection means and the detection method, the automatical detection of etching time can be achieved and the deviation caused by visual observation can be effectively avoided.
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