中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

17 records (took 0.015 seconds)

    COMPOSITION FOR TUNGSTEN CMP
    11.
    发明申请
    COMPOSITION FOR TUNGSTEN CMP 有权
    TUNGSTEN CMP的组合物

    公开(公告)号：US20150259574A1

    公开(公告)日：2015-09-17

    申请号：US14203693

    申请日：2014-03-11

    Applicant: Cabot Microelectronics Corporation

    Inventor： Steven GRUMBINE ,  Jeffrey Dysard ,  Lin Fu ,  William Ward ,  Glenn Whitener

    IPC: C09G1/02 ,  H01L21/306

    CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

    Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine containing polymer in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

    Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的具有永久正电荷至少6mV的胶体二氧化硅磨料，液体溶液中的含胺聚合物 载体和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

    Method of polishing group III-V materials
    16.
    发明授权
    Method of polishing group III-V materials 有权

    公开(公告)号：US10418248B2

    公开(公告)日：2019-09-17

    申请号：US15433068

    申请日：2017-02-15

    Applicant: Cabot Microelectronics Corporation

    Inventor： Benjamin Petro ,  Glenn Whitener ,  William Ward

    IPC: H01L21/306 ,  C09G1/02 ,  C09K3/14 ,  H01L29/20 ,  H01L21/02

    Abstract: Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a substrate containing at least one Group III-V material, with a polishing pad and a chemical-mechanical polishing composition comprising water, abrasive particles having a negative surface charge, and an oxidizing agent for oxidizing the Group III-V material in an amount of from about 0.01 wt. % to about 5 wt. %, wherein the polishing composition has a pH of from about 2 to about 5; (b) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate; and (c) abrading at least a portion of the substrate to polish the substrate. In some embodiments, the Group III-V material is a semiconductor that includes at least one element from Group III of the Periodic Table and at least one element from Group V of the Periodic Table.

    Compositions and Methods For CMP of Silicon Oxide, Silicon Nitride, and Polysilicon Materials
    17.
    发明申请
    Compositions and Methods For CMP of Silicon Oxide, Silicon Nitride, and Polysilicon Materials 有权
    氧化硅，氮化硅和多晶硅材料的CMP的组成和方法

    公开(公告)号：US20150024595A1

    公开(公告)日：2015-01-22

    申请号：US13947449

    申请日：2013-07-22

    Applicant: Cabot Microelectronics Corporation

    Inventor： Dimitry Dinega ,  Kevin Moeggenborg ,  William Ward ,  Daniel Mateja

    IPC: C09G1/02 ,  H01L21/306

    CPC classification number: C09G1/02 ,  B24B1/00 ,  C09G1/00 ,  C09G1/04 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

    Abstract: The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.

    Abstract translation: 本发明提供了一种用于抛光包含二氧化硅，氮化硅和多晶硅的衬底的化学机械抛光方法。 该方法包括用CMP组合物研磨衬底的表面以从其中去除至少一些二氧化硅，氮化硅和多晶硅。 该CMP组合物包含悬浮在pH约为3至9.5并含有阳离子聚合物的水性载体中的颗粒状二氧化铈磨料; 其中阳离子聚合物由季甲基丙烯酰氧基烷基铵聚合物组成。

Patent Agency Ranking