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    Method of separating light-emitting diode from a growth substrate
    11.
    发明授权
    Method of separating light-emitting diode from a growth substrate 有权
    从生长衬底分离发光二极管的方法

    公开(公告)号：US08486730B2

    公开(公告)日：2013-07-16

    申请号：US13567734

    申请日：2012-08-06

    申请人： Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

    发明人： Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC分类号： H01L21/00 ,  H01L29/06 ,  H01L31/00

    CPC分类号： H01L33/007 ,  C23C14/048 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L25/167 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

    摘要翻译： 提供一种形成发光二极管（LED）器件并将LED器件与生长衬底分离的方法。 LED器件通过在生长衬底上形成LED结构而形成。 该方法包括在生长衬底上形成和图案化掩模层。 在图案化掩模层之上形成第一接触层，在第一接触层和图案化掩模层之间具有空气桥。 第一接触层可以是LED结构的接触层。 在形成LED结构之后，生长衬底沿着空气桥与LED结构分离。

    Light-Emitting Diode Integration Scheme
    12.
    发明申请
    Light-Emitting Diode Integration Scheme 有权
    发光二极管集成方案

    公开(公告)号：US20120025222A1

    公开(公告)日：2012-02-02

    申请号：US13269968

    申请日：2011-10-10

    申请人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

    发明人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

    IPC分类号： H01L33/62

    CPC分类号： H01L25/0753 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48227 ,  H05K1/0206 ,  H05K1/113 ,  H05K2201/10106 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A circuit structure includes a carrier substrate, which includes a first through-via and a second through-via. Each of the first through-via and the second through-via extends from a first surface of the carrier substrate to a second surface of the carrier substrate opposite the first surface. The circuit structure further includes a light-emitting diode (LED) chip bonded onto the first surface of the carrier substrate. The LED chip includes a first electrode and a second electrode connected to the first through-via and the second through-via, respectively.

    摘要翻译： 电路结构包括载体基板，其包括第一通孔和第二通孔。 第一通孔和第二通孔中的每一个从载体衬底的第一表面延伸到与第一表面相对的载体衬底的第二表面。 电路结构还包括结合到载体基板的第一表面上的发光二极管（LED）芯片。 LED芯片包括分别连接到第一通孔和第二通孔的第一电极和第二电极。

    Omnidirectional Reflector
    14.
    发明申请
    Omnidirectional Reflector 有权
    全向反射器

    公开(公告)号：US20100038659A1

    公开(公告)日：2010-02-18

    申请号：US12202167

    申请日：2008-08-29

    申请人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    发明人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC分类号： H01L33/00

    CPC分类号： H01L33/60 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/46 ,  H01L2933/0083

    摘要： A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer.

    摘要翻译： 提供了一种用于制造LED的系统和方法。 优选的实施例包括在衬底上形成分布式布拉格反射器的衬底。 在分布式布拉格反射器上形成光子晶体层，使入射到分布式布拉格反射器上的光准直，从而提高分布式布拉格反射器的效率。 优选地，在光子晶体层上形成第一接触层，有源层和第二接触层，或者替代地附着到光子晶体层。

    Light-Emitting Diodes on Concave Texture Substrate
    16.
    发明申请
    Light-Emitting Diodes on Concave Texture Substrate 有权
    凹面纹理基板上的发光二极管

    公开(公告)号：US20100032700A1

    公开(公告)日：2010-02-11

    申请号：US12247895

    申请日：2008-10-08

    申请人： Chen-Hua Yu ,  Hung-Ta Lin ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu

    发明人： Chen-Hua Yu ,  Hung-Ta Lin ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu

    IPC分类号： H01L33/00

    CPC分类号： H01L33/48 ,  H01L33/20 ,  H01L33/24

    摘要： A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.

    摘要翻译： 提供了一种形成在凹面纹理基板上的发光二极管（LED）的半导体器件。 对衬底进行图案化和蚀刻以形成凹陷。 沿着凹部的底部形成分离层。 沿着侧壁和任选地沿着相邻凹部之间的基板的表面形成LED结构。 在这些实施例中，与平面表面相比，LED结构的表面积增加。 在另一个实施例中，LED结构形成在凹部内，使得底部接触层与凹部的拓扑不一致。 在这些实施例中，硅衬底中的凹陷导致底接触层中的立方结构，例如具有非极性特性并且表现出更高外部量子效率的n-GaN层。

    Wafer Dicing Methods
    17.
    发明申请
    Wafer Dicing Methods 审中-公开
    晶圆切片方法

    公开(公告)号：US20100015782A1

    公开(公告)日：2010-01-21

    申请号：US12175818

    申请日：2008-07-18

    申请人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen

    发明人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen

    IPC分类号： H01L21/00

    CPC分类号： H01L21/78 ,  H01L33/0095

    摘要： Semiconductor wafer dicing methods are disclosed. These methods include forming etch patterns between adjacent semiconductor dice to be separated. Various etch processes can be used to form the etch patterns. The etch patterns generally reach a pre-determined depth into the wafer substrate significantly beyond the wafer top layer where pre-fabricated semiconductor dice are embedded. Semiconductor dice may be separated from a post-etch, large-sized, frangible wafer through wafer grinding, mechanical cleaving, and laser dicing approaches. Preferred embodiments result in reduced wafer-dicing related device damage and improved product yield.

    摘要翻译： 公开了半导体晶片切割方法。 这些方法包括在相邻半导体晶片之间形成待分离的蚀刻图案。 可以使用各种蚀刻工艺来形成蚀刻图案。 蚀刻图案通常达到晶片衬底的预定深度，显着超过嵌入预制半导体晶片的晶片顶层。 半导体晶片可以通过晶片研磨，机械切割和激光切割方法与后蚀刻，大尺寸的易碎晶片分离。 优选的实施例导致晶片切割相关装置损坏减少和产品产量提高。

    Light-emitting diode on a conductive substrate
    19.
    发明授权
    Light-emitting diode on a conductive substrate 有权
    导电基板上的发光二极管

    公开(公告)号：US08815618B2

    公开(公告)日：2014-08-26

    申请号：US12541787

    申请日：2009-08-14

    申请人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    发明人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC分类号： H01L33/00 ,  H01L21/78

    CPC分类号： H01L33/0062 ,  H01L21/78 ,  H01L33/0066 ,  H01L33/0079 ,  H01L2924/01078 ,  H01S5/1231 ,  H01S5/2275

    摘要： A light-emitting diode (LED) device is provided. The LED device is formed by forming an LED structure on a first substrate. A portion of the first substrate is converted to a porous layer, and a conductive substrate is formed over the LED structure on an opposing surface from the first substrate. The first substrate is detached from the LED structure along the porous layer and any remaining materials are removed from the LED structure.

    摘要翻译： 提供了一种发光二极管（LED）装置。 LED器件通过在第一衬底上形成LED结构而形成。 将第一衬底的一部分转换成多孔层，并且在与第一衬底相对的表面上的LED结构上形成导电衬底。 第一衬底沿着多孔层与LED结构分离，并且从LED结构中去除任何剩余的材料。

    Light-emitting diode with embedded elements
    20.
    发明授权
    Light-emitting diode with embedded elements 有权
    具有嵌入元件的发光二极管

    公开(公告)号：US08742441B2

    公开(公告)日：2014-06-03

    申请号：US12547428

    申请日：2009-08-25

    申请人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

    发明人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

    IPC分类号： H01L29/72

    CPC分类号： H01L33/44 ,  H01L33/08 ,  H01L33/20

    摘要： A light-emitting diode (LED) device is provided. The LED device has a substrate and an LED structure overlying the substrate. Embedded elements are embedded within one or more layers of the LED structure. In an embodiment, the embedded elements include a dielectric material extending through the LED structure such that the embedded elements are surrounded by the LED structure. In another embodiment, the embedded elements only extend through an upper layer of the LED structure, or alternatively, partially through the upper layer of the LED structure. Another conductive layer may be formed over the upper layer of the LED structure and the embedded elements.

    摘要翻译： 提供了一种发光二极管（LED）装置。 LED器件具有衬底和覆盖衬底的LED结构。 嵌入式元件嵌入LED结构的一层或多层内。 在一个实施例中，嵌入元件包括延伸穿过LED结构的电介质材料，使得嵌入元件被LED结构包围。 在另一个实施例中，嵌入式元件仅延伸穿过LED结构的上层，或者部分地穿过LED结构的上层。 另外的导电层可以形成在LED结构的上层和嵌入元件上。