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11.发明授权Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films 有权用于钛酸盐，镧系元素和钽酸盐介电膜的原子层沉积和化学气相沉积的前体组合物公开(公告)号：US07638074B2
公开(公告)日：2009-12-29
申请号：US12282511
申请日：2007-03-12
CPC分类号： C23C14/088 , C07F17/00 , C23C16/409 , C23C16/45553
摘要： Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula (I), wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.
摘要翻译： 用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。 前体具有式（I）的式M（Cp）2，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1 -R 5各自彼此相同或不同， 其中每个独立地选自氢，C 1 -C 12烷基，C 1 -C 12氨基，C 6 -C 10芳基，C 1 -C 12烷氧基，C 3 -C 6烷基甲硅烷基，C 2 -C 12烯基，R 1 R 2 R 3 N NR 3，其中R 1，R 2和R 3可以是 彼此相同或不同，并且各自独立地选自氢和C 1 -C 6烷基，以及包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现均匀涂布 的高介电常数材料制造闪存和其他微电子器件。
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12.发明授权Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films 有权用于钛酸盐，镧系元素和钽酸盐介电膜的原子层沉积和化学气相沉积的前体组合物公开(公告)号：US08784936B2
公开(公告)日：2014-07-22
申请号：US13370072
申请日：2012-02-09
IPC分类号： C23C16/00
CPC分类号： C23C14/088 , C07F17/00 , C23C16/409 , C23C16/45553
摘要： Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.
摘要翻译： 用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。 前体具有式M（Cp）2，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1 -R 5各自彼此相同或不同，各自独立地 选自氢，C1-C12烷基，C1-C12氨基，C6-C10芳基，C1-C12烷氧基，C3-C6烷基甲硅烷基，C2-C12烯基，R1R2R3NNR3，其中R1，R2和R3可以相同或不同 并且各自独立地选自氢和C 1 -C 6烷基，以及包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现高介电常数的均匀涂布 材料制造闪存等微电子器件。
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公开(公告)号：US20110060165A1
公开(公告)日：2011-03-10
申请号：US12517901
申请日：2006-12-29
IPC分类号： C07C249/00 , C09D7/12 , C23C16/00
CPC分类号： C07F17/00 , C07C279/02 , C23C16/409
摘要： Metal aminotroponiminates, metal bis-oxazolinates and metal guanidinates are described, as well as ligand precursors of such compounds, and mixed ligand barium and strontium complexes suitable for chemical vapor deposition, atomic layer deposition, and rapid vapor deposition processes. Such metal compounds are useful in the formation of thin metal films on substrates, e.g., in chemical vapor deposition, atomic layer deposition or rapid vapor deposition processes. The substrates formed have thin film monolayers of the metals provided by the precursors.
摘要翻译： 本发明描述了金属氨基阿魏酸盐，金属双恶唑酸盐和金属胍盐，以及这些化合物的配体前体，以及适用于化学气相沉积，原子层沉积和快速气相沉积工艺的混合配体钡和锶络合物。 这种金属化合物可用于在基底上形成薄金属膜，例如在化学气相沉积，原子层沉积或快速气相沉积工艺中。 形成的基材具有由前体提供的金属的薄膜单层。
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14.发明申请ZIRCONIUM PRECURSORS USEFUL IN ATOMIC LAYER DEPOSITION OF ZIRCONIUM-CONTAINING FILMS 审中-公开ZIRCONIUM PRECURSORS有用的原子层沉积含有ZIRCONIUM的膜公开(公告)号：US20100270508A1
公开(公告)日：2010-10-28
申请号：US12643708
申请日：2009-12-21
CPC分类号： H01B3/10 , C07C211/65 , C23C16/405 , C23C16/45553
摘要： Zirconium precursors of the formulae Such precursors are liquids at room temperature, and can be employed in vapor deposition processes such as ALD to form zirconium-containing films, e.g., high k dielectric films on microelectronic device substrates. The zirconium precursors can be stabilized in such vapor deposition processes by thermal stabilization amine additives.
摘要翻译： 配方的锆前体这种前体在室温下是液体，可用于气相沉积工艺如ALD中以形成含锆膜，例如在微电子器件基底上的高k电介质膜。 锆前体可以通过热稳定胺添加剂在这种气相沉积工艺中稳定。
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公开(公告)号：US08168811B2
公开(公告)日：2012-05-01
申请号：US12507048
申请日：2009-07-21
申请人： Thomas M. Cameron , Chongying Xu , Tianniu Chen
发明人： Thomas M. Cameron , Chongying Xu , Tianniu Chen
CPC分类号： C07C225/14 , C07F7/003
摘要： Precursors useful for vapor phase deposition processes, e.g., CVD/ALD, to form metal-containing films on substrates. The precursors include, in one class, a central metal atom M to which is coordinated at least one ligand of formula (I): wherein: R1, R2 and R3 are each independently H or ogano moieties; and G1 is an electron donor arm substituent that increases the coordination of the ligand to the central metal atom M; wherein when G1 is aminoalkyl, the substituents on the amino nitrogen are not alkyl, fluoroalkyl, cycloaliphatic, or aryl, and are not connected to form a ring structure containing carbon, oxygen or nitrogen atoms. Also disclosed are ketoester, malonate and other precursors adapted for forming metal-containing films on substrates, suitable for use in the manufacture of microelectronic device products such as semiconductor devices and flat panel displays.
摘要翻译： 用于气相沉积工艺（例如CVD / ALD）以在基底上形成含金属膜的前体。 前体在一类中包括配位至少一种式（I）配位体的中心金属原子M：其中：R 1，R 2和R 3各自独立地为H或无规部分; 并且G1是增加配体与中心金属原子M的配位的电子给体臂取代基; 其中当G1是氨基烷基时，氨基氮上的取代基不是烷基，氟烷基，脂环族或芳基，并且不连接形成含有碳，氧或氮原子的环结构。 还公开了适用于在诸如半导体器件和平板显示器的微电子器件产品的制造中用于在基底上形成含金属膜的酮酯，丙二酸酯和其它前体。
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公开(公告)号：US20100018439A1
公开(公告)日：2010-01-28
申请号：US12507048
申请日：2009-07-21
申请人： Thomas M. Cameron , Chongying Xu , Tianniu Chen
发明人： Thomas M. Cameron , Chongying Xu , Tianniu Chen
IPC分类号： C09D7/12 , C07C211/00 , C07F7/28
CPC分类号： C07C225/14 , C07F7/003
摘要： Precursors useful for vapor phase deposition processes, e.g., CVD/ALD, to form metal-containing films on substrates. The precursors include, in one class, a central metal atom M to which is coordinated at least one ligand of formula (I): wherein:R1, R2 and R3 are each independently H or ogano moieties; andG1 is an electron donor arm substituent that increases the coordination of the ligand to the central metal atom M;wherein when Ga is aminoalkyl, the substituents on the amino nitrogen are not alkyl, fluoroalkyl, cycloaliphatic, or aryl, and are not connected to form a ring structure containing carbon, oxygen or nitrogen atoms. Also disclosed are ketoester, malonate and other precursors adapted for forming metal-containing films on substrates, suitable for use in the manufacture of microelectronic device products such as semiconductor devices and flat panel displays.
摘要翻译： 用于气相沉积工艺（例如CVD / ALD）以在基底上形成含金属膜的前体。 前体在一类中包括配位至少一种式（I）配位体的中心金属原子M：其中：R 1，R 2和R 3各自独立地为H或无规部分; 并且G1是增加配体与中心金属原子M的配位的电子给体臂取代基; 其中当Ga是氨基烷基时，氨基氮上的取代基不是烷基，氟代烷基，脂环族或芳基，并且不连接形成含有碳，氧或氮原子的环结构。 还公开了适用于在诸如半导体器件和平板显示器的微电子器件产品的制造中用于在基底上形成含金属膜的酮酯，丙二酸酯和其它前体。
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公开(公告)号：US20130122722A1
公开(公告)日：2013-05-16
申请号：US13808165
申请日：2011-06-23
IPC分类号： H01L49/02
CPC分类号： H01L28/40 , C23C16/45525 , H01L21/02189 , H01L21/02194 , H01L21/0228
摘要： A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe2)4; Ti(NMeEt)4; Ti(NEt2)4; TiCl4; tBuN═Nb(NEt2)3; tBuN═Nb(NMe2)3; t-BuN═Nb(NEtMe)3; t-AmN═Nb(NEt2)3; t-AmN═Nb(NEtMe)3; t-AmN═Nb(NMe2)3; t-AmN═Nb(OBu-t)3; Nb-13; Nb(NEt2)4; Nb(NEt2)5; Nb(N(CH3)2)5; Nb(OC2H5)5; Nb(thd)(OPr-i)4; SiH(OMe)3; SiCU; Si(NMe2)4; (Me3Si)2NH; GeRax(ORb)4.x wherein x is from 0 to 4, each Ra is independently selected from H or C1-C8 alkyl and each Rb is independently selected from C1-C8 alkyl; GeCl4; Ge(NRa2)4 wherein each Ra is independently selected from H and C1-C8 alkyl; and (Rb3Ge)2NH wherein each Rb is independently selected from C1-C8 alkyl; bis(N,N′-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Doped zirconium oxide materials of the present disclosure are usefully employed in ferroelectric capacitors and dynamic random access memory (DRAM) devices.
摘要翻译： 一种形成电介质材料的方法，包括使用选自Ti（NMe 2）4的掺杂剂前体掺杂氧化锆材料; Ti（NMeEt）4; Ti（NEt2）4; TiCl4; tBuN = Nb（NEt2）3; tBuN = Nb（NMe2）3; t-BuN = Nb（NEtMe）3; t-AmN = Nb（NEt2）3; t-AmN = Nb（NEtMe）3; t-AmN = Nb（NMe2）3; t-AmN = Nb（OBu-t）3; Nb-13; Nb（NEt2）4; Nb（NEt2）5; Nb（N（CH 3）2）5; Nb（OC2H5）5; Nb（thd）（OPr-i）4; SiH（OMe）3; SiCU; Si（NMe2）4; （Me 3 Si）2 NH GeRax（ORb）4.x其中x为0至4，每个R a独立地选自H或C 1 -C 8烷基，并且每个R b独立地选自C 1 -C 8烷基; GeCl4; Ge（NRa 2）4，其中每个R a独立地选自H和C 1 -C 8烷基; 和（Rb 3 Ge）2 NH，其中每个R b独立地选自C 1 -C 8烷基; 双（N，N'-二异丙基-1,3-丙二酰胺）钛; 和四（异丙基甲基氨基）钛; 其中Me是甲基，Et是乙基，Pr-i是异丙基，t-Bu是叔丁基，t-Am是叔戊基，thd是2,2,6,6-四甲基-3,5-庚二酮酸。 本公开的掺杂氧化锆材料有用地用于铁电电容器和动态随机存取存储器（DRAM）器件中。
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18.发明申请公开(公告)号：US20120064719A1
公开(公告)日：2012-03-15
申请号：US13256832
申请日：2010-03-17
CPC分类号： C23C16/0272 , C23C16/18 , C23C16/45534 , H01L28/65
摘要： A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non- metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition.
摘要翻译： 一种在气相沉积工艺中形成含钌膜的方法，包括用辅助金属物质沉积钌，其在不存在这种辅助金属物质的情况下相对于沉积钌而增加钌沉积的速率和程度。 用于实施这种方法的说明性前体组合物包括在溶剂介质中的钌前体和锶前体，其中钌和锶前体之一包括与另一前体的中心金属原子配位的侧链官能团，使得钌 和锶共沉积。 该方法允许在非金属基底上钌沉积的孵育时间非常短，从而在诸如原子层沉积的过程中容纳非常快速的成膜。
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公开(公告)号：US20100209598A1
公开(公告)日：2010-08-19
申请号：US12705587
申请日：2010-02-13
申请人： Chongying Xu , Weimin Li , Thomas M. Cameron
发明人： Chongying Xu , Weimin Li , Thomas M. Cameron
CPC分类号： H01G4/1209 , C23C16/40 , C23C16/4488 , C23C16/45553 , H01G4/008 , H01G4/33 , H01L21/02175 , H01L21/02194 , H01L21/0228 , H01L21/28562 , H01L21/3141 , H01L21/31604
摘要： Apparatus and method for generating ruthenium tetraoxide in situ for use in vapor deposition, e.g., atomic layer deposition (ALD), of ruthenium-containing films on microelectronic device substrates. The ruthenium tetraoxide can be generated on demand by reaction of ruthenium or ruthenium dioxide with an oxic gas such as oxygen or ozone. In one implementation, ruthenium tetraoxide thus generated is utilized with a strontium organometallic precursor for atomic layer deposition of strontium ruthenate films of extremely high smoothness and purity.
摘要翻译： 用于在微电子器件基底上用于气相沉积（例如原子层沉积（ALD））含钌膜的原位四氧化钌的装置和方法。 可以根据需要通过钌或二氧化钌与氧气或臭氧等氧气反应来生成四氧化钌。 在一个实施方案中，由此产生的四氧化钌与锶有机金属前体一起被用于具有极高平滑度和纯度的钌酸锶薄膜的原子层沉积。
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公开(公告)号：US09373677B2
公开(公告)日：2016-06-21
申请号：US13808165
申请日：2011-06-23
CPC分类号： H01L28/40 , C23C16/45525 , H01L21/02189 , H01L21/02194 , H01L21/0228
摘要： A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe2)4; Ti(NMeEt)4; Ti(NEt2)4;TiCl4; tBuN═Nb(NEt2)3; tBuN═Nb(NMe2)3; t-BuN═Nb(NEtMe)3; t-AmN═Nb(NEt2)3; t-AmN═Nb(NEtMe)3; t-AmN═Nb(NMe2)3; t-AmN═Nb(OBu-t)3; Nb-13; Nb(NEt2)4; Nb(NEt2)5; Nb(N(CH3)2)5; Nb(OC2H5)5; Nb(thd)(OPr-i)4; SiH(OMe)3; SiCU; Si(NMe2)4; (Me3Si)2NH; GeRax(ORb)4.x wherein x is from 0 to 4, each Ra is independently selected from H or C1-C8 alkyl and each Rb is independently selected from C1-C8 alkyl; GeCl4; Ge(NRa2)4 wherein each Ra is independently selected from H and C1-C8 alkyl; and (Rb3Ge)2NH wherein each Rb is independently selected from C1-C8 alkyl; bis(N,N′-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Doped zirconium oxide materials of the present disclosure are usefully employed in ferroelectric capacitors and dynamic random access memory (DRAM) devices.
摘要翻译： 一种形成电介质材料的方法，包括使用选自Ti（NMe 2）4的掺杂剂前体掺杂氧化锆材料; Ti（NMeEt）4; Ti（NEt2）4; TiCl4; tBuN = Nb（NEt2）3; tBuN = Nb（NMe2）3; t-BuN = Nb（NEtMe）3; t-AmN = Nb（NEt2）3; t-AmN = Nb（NEtMe）3; t-AmN = Nb（NMe2）3; t-AmN = Nb（OBu-t）3; Nb-13; Nb（NEt2）4; Nb（NEt2）5; Nb（N（CH 3）2）5; Nb（OC2H5）5; Nb（thd）（OPr-i）4; SiH（OMe）3; SiCU; Si（NMe2）4; （Me 3 Si）2 NH GeRax（ORb）4.x其中x为0至4，每个R a独立地选自H或C 1 -C 8烷基，并且每个R b独立地选自C 1 -C 8烷基; GeCl4; Ge（NRa 2）4，其中每个R a独立地选自H和C 1 -C 8烷基; 和（Rb 3 Ge）2 NH，其中每个R b独立地选自C 1 -C 8烷基; 双（N，N'-二异丙基-1,3-丙二酰胺）钛; 和四（异丙基甲基氨基）钛; 其中Me是甲基，Et是乙基，Pr-i是异丙基，t-Bu是叔丁基，t-Am是叔戊基，thd是2,2,6,6-四甲基-3,5-庚二酮酸。 本公开的掺杂氧化锆材料有用地用于铁电电容器和动态随机存取存储器（DRAM）器件中。
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