公开(公告)号：US20050208434A1

公开(公告)日：2005-09-22

申请号：US10801571

申请日：2004-03-17

申请人： Aelan Mosden ,  Dung Phan

发明人： Aelan Mosden ,  Dung Phan

IPC分类号： G03F7/00 ,  G03F7/075 ,  G03F7/09 ,  G03F7/11 ,  G03F7/36 ,  G03F7/40 ,  G03F7/42 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

CPC分类号： G03F7/091 ,  G03F7/0752 ,  G03F7/11 ,  G03F7/40 ,  G03F7/405 ,  G03F7/427 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/32139

摘要： During pattern transfer to a film stack, the hard mask layer, such as a tunable etch resistant antireflective coating (TERA), is consumed when etching the underling layer(s), leading to reduced etch performance and potential damage to the underlying layer(s), such as lack of profile control. A method of and system for preparing a structure on a substrate is described comprising: preparing a film stack comprising a thin film, a hard mask formed on the thin film, and a layer of light-sensitive material formed on the hardmask; forming a pattern in the layer of light-sensitive material; transferring the pattern to the hard mask; removing the layer of light-sensitive material; treating the surface layer of the hard mask in order to modify the surface; and transferring the pattern to the thin film.

摘要翻译： 在图案转印到薄膜叠层中，当蚀刻底层时，硬掩模层（例如可调蚀抗蚀抗反射涂层（TERA））被消耗，导致降低的蚀刻性能和对下层的潜在损伤 ），如缺少配置文件控制。 描述了一种用于在衬底上制备结构的方法和系统，其包括：制备包括薄膜，形成在薄膜上的硬掩模和形成在硬掩模上的感光材料层的薄膜叠层; 在感光材料层上形成图案; 将图案转移到硬掩模; 去除感光材料层; 处理硬掩模的表面层以改变表面; 并将图案转印到薄膜上。

公开(公告)号：US07226868B2

公开(公告)日：2007-06-05

申请号：US10492541

申请日：2002-10-31

申请人： Aelan Mosden ,  Sandra Hyland ,  Minori Kajimoto

发明人： Aelan Mosden ,  Sandra Hyland ,  Minori Kajimoto

IPC分类号： H01L21/302

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/3341 ,  H01L21/3065

摘要： A plasma processing system for and method of utilizing an improved etch chemistry for effectively etching high aspect ratio silicon features. The process chemistry employs precursor gases suitable for producing a fluorine/chlorine etch chemistry as well as precursor gases suitable for forming chemical bonds of sufficient strength to create stable feature side-walls. The improved process chemistries include SO2/SF4/SiCl4, SO2/SF4/Cl2, SO2/SiF4/SiCl4, SO2SIF4/Cl2, O2/F2/Cl2, N2 O/F2/Cl2, and NO2/F2/Cl2-based chemistries.

摘要翻译： 一种等离子体处理系统以及利用改进的蚀刻化学品来有效地蚀刻高纵横比硅特征的方法。 工艺化学使用适用于生产氟/氯蚀刻化学品的前体气体，以及适于形成足够强度的化学键的前体气体，以产生稳定的特征侧壁。 改进的工艺化学物质包括SO 2 SO 3 / SF 4 / SiCl 4，SO 2 / SF 4 2/2/2/2 / SiF 4 / SiCl 4，SO 2 2/3/2/2/2/2/2/2 的化学物质。

公开(公告)号：US20050224458A1

公开(公告)日：2005-10-13

申请号：US10813390

申请日：2004-03-31

申请人： Marcel Gaudet ,  Aelan Mosden ,  Robert Soave

发明人： Marcel Gaudet ,  Aelan Mosden ,  Robert Soave

IPC分类号： B08B6/00 ,  B08B7/00 ,  C23C16/44

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32082 ,  H01J2237/022

摘要： A system and method is provided for removing chamber residues from a plasma processing system in a dry cleaning process. The dry cleaning process includes introducing a process gas including a gas containing carbon and oxygen in a process chamber of the plasma processing system, generating a plasma from the process gas, exposing the chamber residue to the plasma in a dry cleaning process to form a volatile reaction product, and exhausting the reaction product from the process chamber. The plasma processing system may be monitored to determine status of the processing system, and based upon the status from the monitoring, the method includes either continuing the exposing and monitoring, or stopping the dry cleaning process. The dry cleaning process can be a waferless dry cleaning (WDC) process, or a substrate may present on the substrate holder in the process chamber during the dry cleaning process.

摘要翻译： 提供了用于在干洗过程中从等离子体处理系统中去除室残留物的系统和方法。 所述干洗方法包括在等离子体处理系统的处理室中引入包括含有碳和氧的气体的工艺气体，从所述工艺气体产生等离子体，在干式清洗过程中将所述室残留物暴露于等离子体以形成挥发性 反应产物，并从处理室中排出反应产物。 可以监测等离子体处理系统以确定处理系统的状态，并且基于来自监视的状态，该方法包括继续曝光和监视，或停止干洗过程。 干洗过程可以是无晶圆干洗（WDC）工艺，或者在干洗过程中，基板可能存在于处理室中的基板支架上。

公开(公告)号：US07959970B2

公开(公告)日：2011-06-14

申请号：US10813390

申请日：2004-03-31

申请人： Marcel Gaudet ,  Aelan Mosden ,  Robert J. Soave

发明人： Marcel Gaudet ,  Aelan Mosden ,  Robert J. Soave

IPC分类号： C23C16/00

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32082 ,  H01J2237/022

摘要： A system and method is provided for removing chamber residues from a plasma processing system in a dry cleaning process. The dry cleaning process includes introducing a process gas including a gas containing carbon and oxygen in a process chamber of the plasma processing system, generating a plasma from the process gas, exposing the chamber residue to the plasma in a dry cleaning process to form a volatile reaction product, and exhausting the reaction product from the process chamber. The plasma processing system may be monitored to determine status of the processing system, and based upon the status from the monitoring, the method includes either continuing the exposing and monitoring, or stopping the dry cleaning process. The dry cleaning process can be a waferless dry cleaning (WDC) process, or a substrate may present on the substrate holder in the process chamber during the dry cleaning process.

摘要翻译： 提供了用于在干洗过程中从等离子体处理系统中去除室残留物的系统和方法。 所述干洗方法包括在等离子体处理系统的处理室中引入包括含有碳和氧的气体的工艺气体，从所述工艺气体产生等离子体，在干式清洗过程中将所述室残留物暴露于等离子体以形成挥发性 反应产物，并从处理室中排出反应产物。 可以监测等离子体处理系统以确定处理系统的状态，并且基于来自监视的状态，该方法包括继续曝光和监视，或停止干洗过程。 干洗过程可以是无晶圆干洗（WDC）工艺，或者在干洗过程中，基板可能存在于处理室中的基板支架上。

公开(公告)号：US20070238301A1

公开(公告)日：2007-10-11

申请号：US11390470

申请日：2006-03-28

申请人： Stephen Cabral ,  Aelan Mosden ,  Young Lee

发明人： Stephen Cabral ,  Aelan Mosden ,  Young Lee

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/31116 ,  H01L21/02049 ,  H01L21/67109

摘要： A batch processing system and method for chemical oxide removal (COR) is described. The batch processing system is configured to provide chemical treatment of a plurality of substrates, wherein each substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. Furthermore, the batch processing system is configured to provide thermal treatment of a plurality of substrates, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

摘要翻译： 描述了用于化学氧化物去除（COR）的批处理系统和方法。 批处理系统被配置为提供多个基板的化学处理，其中每个基板在包括表面温度和气体压力的受控条件下暴露于气体化学物质，例如HF / NH 3。 此外，批处理系统被配置为提供多个基板的热处理，其中每个基板被热处理以去除每个基板上的经化学处理的表面。

公开(公告)号：US07097779B2

公开(公告)日：2006-08-29

申请号：US10883784

申请日：2004-07-06

申请人： Aelan Mosden ,  Asao Yamashita

发明人： Aelan Mosden ,  Asao Yamashita

IPC分类号： B44C1/22 ,  H01L21/00

CPC分类号： H01L21/02167 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3148 ,  H01L21/31633

摘要： A processing system and method for chemically treating a TERA layer on a substrate. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate. In one embodiment, the system for processing a TERA layer includes a plasma-enhanced chemical vapor deposition (PECVD) system for depositing the TERA layer on the substrate, an etching system for creating features in the TERA layer, and a processing subsystem for reducing the size of the features in the TERA layer.

摘要翻译： 一种用于化学处理基底上的TERA层的处理系统和方法。 衬底的化学处理化学改变衬底上的暴露表面。 在一个实施例中，用于处理TERA层的系统包括用于在衬底上沉积TERA层的等离子体增强化学气相沉积（PECVD）系统，用于在TERA层中创建特征的蚀刻系统，以及用于减少 TERA图层中的特征尺寸。