公开(公告)号：US20140346532A1

公开(公告)日：2014-11-27

申请号：US14062454

申请日：2013-10-24

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock KIM ,  Hyundai PARK ,  In Gyoo KIM ,  Sang Hoon KIM ,  Ki Seok JANG ,  Sang Gi KIM ,  Jiho JOO ,  Yongseok CHOI ,  Hyuk Je KWON ,  Jaegyu PARK ,  Sun Ae KIM ,  Jin Hyuk OH ,  Myung Joon KWACK

IPC: H01L31/167 ,  G02B6/42

CPC classification number: G02B6/12004 ,  G02B6/13 ,  G02B6/4206 ,  G02B6/4214 ,  H01L21/762 ,  H01L27/15 ,  H01L31/167

Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

Abstract translation: 公开了一种光输入/输出装置和包括其的光电系统。 该器件包括体硅衬底，整体地集成在体硅衬底的一部分上的至少一个垂直输入光检测元件以及整体集成在体硅衬底的另一部分上的至少一个垂直输出光源元件， 垂直输入光检测元件。 垂直输出光源元件包括通过晶片接合方法与体硅衬底组合的III-V化合物半导体光源有源层。

公开(公告)号：US20150146755A1

公开(公告)日：2015-05-28

申请号：US14279839

申请日：2014-05-16

Applicant: Electronics and Telecommunications Research Institute

Inventor： In Gyoo KIM ,  Sang Hoon KIM ,  Jaegyu PARK ,  Gyungock KIM ,  Ki Seok JANG

IPC: H01S5/10 ,  H01S5/20

CPC classification number: H01S5/1021 ,  G02B6/12 ,  G02B6/122 ,  G02B6/1228 ,  G02B6/136 ,  G02B2006/12061 ,  G02B2006/12147 ,  H01S5/021 ,  H01S5/026 ,  H01S5/2086 ,  H01S5/2272 ,  H01S5/3223 ,  H01S2301/176 ,  H01S2304/00

Abstract: Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.

Abstract translation: 提供一种制造半导体激光器的方法。 该方法包括：提供包括第一区域和第二区域的半导体衬底; 通过使用选择性外延生长工艺在半导体衬底的第二区域中形成硅单晶层; 通过使用硅单晶层形成光耦合器; 以及通过选择性外延生长工艺在半导体衬底的第一区域中形成包括锗单晶层的激光芯结构。

公开(公告)号：US20140105235A1

公开(公告)日：2014-04-17

申请号：US13776428

申请日：2013-02-25

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： In Gyoo KIM ,  Gyungock KIM ,  Sang Hoon KIM ,  Ki Seok JANG ,  JiHo JOO

IPC: H01S5/30

CPC classification number: H01S5/3031 ,  G02B6/12004 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/3223 ,  Y10S438/933

Abstract: Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.

Abstract translation: 提供半导体激光器及其制造方法。 该方法包括：提供包括掩埋氧化物层的衬底; 形成图案，其包括通过蚀刻所述掩埋氧化物层而露出所述衬底的开口部分; 在开口部分形成锗单晶层; 并在基片上形成与锗单晶层相邻的光耦合器。

公开(公告)号：US20140048772A1

公开(公告)日：2014-02-20

申请号：US13949081

申请日：2013-07-23

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock KIM ,  Sang Hoon KIM ,  Ki Seok JANG ,  In Gyoo KIM ,  Jin Hyuk OH ,  Sun Ae KIM

IPC: H01L33/06 ,  H01L33/00

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L31/035227 ,  H01L31/035254 ,  H01L31/107 ,  H01L33/0054 ,  Y10S977/762 ,  Y10S977/774 ,  Y10S977/954

Abstract: Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.

Abstract translation: 提供一种基于硅晶片的锗半导体光电检测器，其被配置为能够在相对低的电压下提供高增益，高灵敏度和高速度的特性。 可以在硅晶片上提供基于锗的载体倍增层（例如，单个锗层或锗和硅超晶格层），并且可以在其上提供锗电荷层，可以在电荷上提供锗吸收层 层，并且可以在吸收层上设置多晶硅第二接触层。 吸收层可以被配置为包括锗量子点或线。