摘要:
Systems, devices, and methods are disclosed for enabling the reconfiguration of services supported by a network of devices. Such reconfiguration can be realized dynamically and in real time without compromising the security of the overall system from external threats or internal malfunctions. These systems, devices and methods may provide a first functional stack supporting a previous version of a specific service and the provisioning of a second functional stack dynamically and in real-time that supports an updated version of the specific service. In addition, an administration function may be included in the embodiment such that the administration function manages and controls the functional stacks and network operations. Using these mechanisms, an existing service can be changed dynamically or a new service can be added dynamically in a secure manner without interruption of other existing services.
摘要:
A memory device includes a memory cell array including a plurality of memory blocks, each memory block including a plurality of memory cells, a plurality of word lines coupled to rows of the plurality of memory cells, a plurality of bit lines coupled to columns of the plurality of memory cells, and a control unit controlling an erase operation so that erase data is simultaneously written in the plurality of memory cells corresponding to an erase unit. A first erase mode may include a first erase unit and a first erase data pattern. A second erase mode may include a second erase unit and a second erase pattern. At least one of the first and second erase units and the first and second erase data patterns are different.
摘要:
A method for hydrogenating poly-si. Poly-si is placed into the interior of a chamber. A filament is placed into the interior of a chamber. The base pressure of the interior of the chamber is evacuated, preferably to 10−6 Torr or less. The poly-si is heated for a predetermined poly-si heating time. The filament is heated by providing an electrical power to the filament. Hydrogen is supplied into the pressurized interior of the chamber comprising the heated poly-si and the heated filament. Atomic hydrogen is produced by the filament at a rate whereby the atomic hydrogen surface density at the poly-si is less than the poly-si surface density. Preferably, the poly-si is covered from the atomic hydrogen produced by the heated filament for a first predetermined covering time. Preferably, the poly-si is then uncovered from the atomic hydrogen produced by the heated filament for a first hydrogenation time.
摘要:
An apparatus (200) for detecting slow or thermal neutrons (160) including an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel. The neutron conversion layer (860) may be deposited on the contact pixels (830) such as with use of inkjet printing of nanoparticle ink.
摘要:
Discussed herein is a synchronization structure for a receiving apparatus for receiving signals in a communication system, in which the signals are transmitted in frames, each frame comprising a synchronization part with synchronization sequences, wherein at least one of the synchronization sequences has a different phase than the other synchronization sequences. The synchronization structure includes a correlation unit configured to perform a correlation on the synchronization part, a peak detection unit configured to detect candidate correlation peaks and the correlation result, and a correlation peak detection unit configured to detect a correlation peak among said candidate correlation peaks on the basis of a confidence value and phase information. Further, a corresponding synchronization method that enables frame synchronization with a higher performance in low signal to noise ratio environments is also discussed.
摘要:
The present invention provides a nano smart glass system, including nano smart glass, DC power supply, sensor, and control unit. Wherein, the nano smart glass includes glass and the electrochromic thin-film device; The anode of the DC power supply connects to the at least one conductive anode layer of the electrochromic thin-film device; the cathode of the DC power supply connects to the at least one conductive cathode layer of the electrochromic thin-film device; the DC power supply is used to provide 1V-50V DC voltage to the electrochromic thin-film device; the electrochromic thin-film device adheres to the inside surface of the glass through the at least one conductive cathode layer or the at least one conductive anode layer; The sensor measures outdoor or indoor conditions and send the real-time measurement data to the control unit. The control unit connects to the DC power supply, and it can control the output voltage of the DC power supply to the electrochromic thin-film device. The present invention can real-time and intelligently adjust the color of the glass, which can help saving energy and reducing green house gas emission.
摘要:
Subsequent association identifier (AID) update within single user, multiple user, multiple access, and/or MIMO wireless communications. Even while a given communication device maintains continuous association within a given communication system, a unique identifier associated with that particular communication device may be updated. For example, considering and implementation including an access point (AP) and a number of wireless stations (STAs), even while at least some of the STAs remain in association with the AP, the respective unique identifiers associated with one or more of those STAs may be updated (e.g., the respective AID values associated with one or more of those STAs may be updated). For example, after an initial assignment of unique identifiers associated with a group of respective communication devices within the communication network, the unique identifier associated with one or more of those respective communication devices may be updated or changed after the initial assignment.
摘要:
A rapid thermal processing device and methods are provided for thermal processing of samples such as semiconductor wafers. The device has components including a stamp (35) having a stamping surface and a heater or cooler (40) to bring it to a selected processing temperature, a sample holder (20) for holding a sample (10) in position for intimate contact with the stamping surface; and positioning components (25) for moving the stamping surface and the stamp (35) in and away from intimate, substantially non-pressured contact. Methods for using and making such devices are also provided. These devices and methods allow inexpensive, efficient, easily controllable thermal processing.
摘要:
A method is provided in one example embodiment and includes establishing a connection between a client and a messaging fabric of a conductor element associated with a video system and authenticating the client (e.g., involving a plurality of device credentials associated with the device). The method also includes assigning a name to identify a device associated with the client; updating a client directory with the name and a device status associated with the device; and establishing a service connection to the conductor element to enable message exchanges with the device. The service connection establishes an Extensible Messaging and Presence Protocol (XMPP)-based service.
摘要:
A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.