公开(公告)号：US09631778B2

公开(公告)日：2017-04-25

申请号：US14796723

申请日：2015-07-10

Applicant: Entegris, Inc.

Inventor： Joseph D. Sweeney ,  Anthony M. Avila ,  Michael J. Wodjenski ,  Joseph R. Despres ,  Thomas H. Baum

IPC: F17D3/00 ,  H01L21/67 ,  F17D3/01 ,  G05D7/06 ,  H01J37/317

CPC classification number: F17D3/01 ,  F17D3/00 ,  G05D7/0635 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/30466 ,  H01L21/67017 ,  H01L21/67253 ,  Y10T137/0324 ,  Y10T137/86389

Abstract: Apparatus and method for determining endpoint of a fluid supply vessel in which fluid flow is controlled through a flow passage disposed in an interior volume of the fluid supply vessel with a static flow restricting device and a selectively actuatable valve element upon establishing fluid flow. The endpoint determination can be employed to terminate fluid supply from the fluid supply vessel and/or to switch from a fluid-depleted supply vessel to a fresh vessel for continuity or renewal of fluid supply operation. The apparatus and method are suitable for use with fluid-utilizing apparatus such as ion implanters.

公开(公告)号：US20150247605A1

公开(公告)日：2015-09-03

申请号：US14430105

申请日：2013-09-20

Applicant: Entegris, Inc.

Inventor： Joseph R. Despres ,  Joseph D. Sweeney ,  Edward E. Jones ,  Matthew B. Donatucci ,  Chiranjeevi Pydi ,  Edward A. Sturm ,  Barry Lewis Chambers ,  Gregory Scott Baumgart

IPC: F17C13/12 ,  F17C13/04

CPC classification number: F17C13/12 ,  F17C13/04 ,  F17C2201/0104 ,  F17C2205/0326 ,  F17C2205/0329 ,  F17C2205/0335 ,  F17C2205/0338 ,  F17C2205/0344 ,  F17C2205/035 ,  F17C2205/0382 ,  F17C2205/0391 ,  F17C2221/012 ,  F17C2221/013 ,  F17C2221/015 ,  F17C2221/016 ,  F17C2227/045 ,  F17C2250/0626 ,  F17C2270/0518 ,  Y02E60/321 ,  Y10T137/7795

Abstract: A fluid supply package comprising a pressure-regulated fluid storage and dispensing vessel, a valve head adapted for dispensing of fluid from the vessel, and an anti-pressure spike assembly adapted to combat pressure spiking in flow of fluid at inception of fluid dispensing.

Abstract translation: 一种流体供应包，其包括压力调节的流体存储和分配容器，适于从容器分配流体的阀头，以及适于在开始流体分配时防止流体流动中的压力尖峰的抗压尖钉组件。

公开(公告)号：US20240043988A1

公开(公告)日：2024-02-08

申请号：US18216330

申请日：2023-06-29

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Joseph R. Despres ,  Edward E. Jones ,  Joseph D. Sweeney

IPC: C23C14/48 ,  C23C14/00 ,  C23C14/34

CPC classification number: C23C14/48 ,  C23C14/0057 ,  C23C14/0063 ,  C23C14/3414

Abstract: The present disclosure relates to an ion implantation tool source and gas delivery system. The system can include a gas source comprising one or more gas supply vessels, an ion implanter arc chamber connected to the gas source, and a gallium target contained within the ion implanter arc chamber. The one or more gas supply vessels can supply a mixture of gases of hydrogen and fluoride. The hydrogen can be from 5% to 60% of the mixture of gases.

公开(公告)号：US11682540B2

公开(公告)日：2023-06-20

申请号：US17466362

申请日：2021-09-03

Applicant: Entegris, Inc.

Inventor： Ying Tang ,  Sharad N. Yedave ,  Joseph R. Despres ,  Joseph D. Sweeney ,  Oleg Byl

IPC: H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/08

Abstract: A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

公开(公告)号：US20220290812A1

公开(公告)日：2022-09-15

申请号：US17689610

申请日：2022-03-08

Applicant: ENTEGRIS, INC.

Inventor： Edward E. Jones ,  Joseph R. Despres ,  Sarah A. Utz

IPC: F17C7/00 ,  F17C11/00

Abstract: A gas storage and dispensing container includes a storage vessel, a first gas pressure regulator, and a second gas pressure regulator. The storage vessel is configured to contain a pressurized gas. The gas storage and dispensing container has a discharge flow path for discharging the pressurized gas. The first gas pressure regulator is disposed within the storage vessel, and the second gas pressure regulator is external to the storage vessel. The discharge flow path extends through the first gas pressure regulator and the second gas pressure regulator. A method of discharging gas from a gas storage and dispensing container includes a first gas pressure regulator reducing a pressure of the pressurized gas to a first pressure and a second gas pressure regulator reducing the pressure of the pressurized gas to a second pressure.

公开(公告)号：US11299802B2

公开(公告)日：2022-04-12

申请号：US17055885

申请日：2019-03-15

Applicant: ENTEGRIS, INC.

Inventor： Oleg Byl ,  Ying Tang ,  Joseph R. Despres ,  Joseph Sweeney ,  Sharad N. Yedave

IPC: C23C14/48 ,  C23C14/56 ,  H01J37/08 ,  H01J37/317

Abstract: The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during an ion implantation procedure.

公开(公告)号：US11139145B2

公开(公告)日：2021-10-05

申请号：US16904286

申请日：2020-06-17

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Sharad N. Yedave ,  Joseph R. Despres ,  Joseph D. Sweeney ,  Oleg Byl

IPC: H01J37/317 ,  H01J37/08

Abstract: A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

公开(公告)号：US20160281238A1

公开(公告)日：2016-09-29

申请号：US15156421

申请日：2016-05-17

Applicant: Entegris, Inc.

Inventor： Jose I. Arno ,  Joseph R. Despres ,  Shkelqim Letaj ,  Steven M. Lurcott ,  Thomas H. Baum ,  Peng Zou

IPC: C23C16/52 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/14 ,  C23C16/455 ,  G01N21/3504

Abstract: Apparatus and method for monitoring a vapor deposition installation in which a gas mixture can undergo gas phase nucleation (GPN) and/or chemically attack the product device, under process conditions supportive of such behavior. The apparatus includes a radiation source arranged to transmit source radiation through a sample of the gas mixture, and a thermopile detector assembly arranged to receive output radiation resulting from interaction of the source radiation with the gas mixture sample, and to responsively generate an output indicative of onset of the gas phase nucleation and/or chemical attack when such onset occurs. Such monitoring apparatus and methodology is useful in tungsten CVD processing to achieve high rate tungsten film growth without GPN or chemical attack.

Abstract translation: 用于监测气相沉积装置的装置和方法，其中气体混合物可以在支持这种行为的工艺条件下经历气相成核（GPN）和/或化学侵蚀产品装置。 该装置包括被布置成通过气体混合物的样本传送源辐射的辐射源，以及布置成接收由源辐射与气体混合物样品的相互作用产生的输出辐射的热电堆检测器组件，并且响应地产生指示 发生这种发生时气相成核和/或化学侵蚀的发生。 这种监测装置和方法在钨CVD处理中可用于实现无GPN或化学侵蚀的高速钨膜生长。

公开(公告)号：US20240062987A1

公开(公告)日：2024-02-22

申请号：US18236719

申请日：2023-08-22

Applicant: ENTEGRIS, INC.

Inventor： Joseph R. Despres ,  Ying Tang

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/16

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J37/16 ,  H01J2237/006

Abstract: A system and method for generating aluminum ions for implantation into a substrate. The system and method comprise flowing a chlorine-containing gas from a first vessel, optionally with a hydrogen-containing co-gas and optionally with a fluorine-containing co-gas, to an ion source chamber of an ion implantation device. The ion source chamber comprises a solid aluminum target material. At the ion source chamber, aluminum ions are generated for implantation into a substrate.

公开(公告)号：US11538687B2

公开(公告)日：2022-12-27

申请号：US16713189

申请日：2019-12-13

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Sharad N. Yedave ,  Joseph R. Despres ,  Joseph D. Sweeney

IPC: H01L21/265 ,  H01J37/317 ,  H01J37/32

Abstract: A system and method for fluorine ion implantation is described, which includes a fluorine gas source used to generate a fluorine ion species for implantation to a subject, and an arc chamber that includes one or more non-tungsten materials (graphite, carbide, fluoride, nitride, oxide, ceramic). The system minimizes formation of tungsten fluoride during system operation, thereby extending source life and promoting improved system performance. Further, the system can include a hydrogen and/or hydride gas source, and these gases can be used along with the fluorine gas to improve source lifetime and/or beam current.